GB923104A - Improvements in or relating to semiconductive devices - Google Patents
Improvements in or relating to semiconductive devicesInfo
- Publication number
- GB923104A GB923104A GB17134/59A GB1713459A GB923104A GB 923104 A GB923104 A GB 923104A GB 17134/59 A GB17134/59 A GB 17134/59A GB 1713459 A GB1713459 A GB 1713459A GB 923104 A GB923104 A GB 923104A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- zones
- transistor
- current
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 230000000694 effects Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US737883A US2959504A (en) | 1958-05-26 | 1958-05-26 | Semiconductive current limiters |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB923104A true GB923104A (en) | 1963-04-10 |
Family
ID=24965687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB17134/59A Expired GB923104A (en) | 1958-05-26 | 1959-05-20 | Improvements in or relating to semiconductive devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2959504A (ja) |
| JP (1) | JPS374662B1 (ja) |
| BE (1) | BE578696A (ja) |
| DE (1) | DE1090331B (ja) |
| FR (1) | FR1225369A (ja) |
| GB (1) | GB923104A (ja) |
| NL (1) | NL239104A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3996601A (en) * | 1974-07-15 | 1976-12-07 | Hutson Jerald L | Shorting structure for multilayer semiconductor switching devices |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3146135A (en) * | 1959-05-11 | 1964-08-25 | Clevite Corp | Four layer semiconductive device |
| NL264084A (ja) * | 1959-06-23 | |||
| DE1146152B (de) * | 1959-07-07 | 1963-03-28 | Philips Patentverwaltung | Isolatoranordnung aus Isolationsmaterialien mit bevorzugt elektronischer Leitfaehigkeit, insbesondere fuer elektrische Entladungsroehren |
| US3124703A (en) * | 1960-06-13 | 1964-03-10 | Figure | |
| US3195077A (en) * | 1960-09-06 | 1965-07-13 | Westinghouse Electric Corp | Semiconductor multisection r-c filter of tapered monolithic construction having progressively varied values of impedance per section |
| US3200017A (en) * | 1960-09-26 | 1965-08-10 | Gen Electric | Gallium arsenide semiconductor devices |
| US3220380A (en) * | 1961-08-21 | 1965-11-30 | Merck & Co Inc | Deposition chamber including heater element enveloped by a quartz workholder |
| US3237062A (en) * | 1961-10-20 | 1966-02-22 | Westinghouse Electric Corp | Monolithic semiconductor devices |
| US3239728A (en) * | 1962-07-17 | 1966-03-08 | Gen Electric | Semiconductor switch |
| GB1052447A (ja) * | 1962-09-15 | |||
| NL300210A (ja) * | 1962-11-14 | |||
| US3300694A (en) * | 1962-12-20 | 1967-01-24 | Westinghouse Electric Corp | Semiconductor controlled rectifier with firing pin portion on emitter |
| US3277352A (en) * | 1963-03-14 | 1966-10-04 | Itt | Four layer semiconductor device |
| US3265909A (en) * | 1963-09-03 | 1966-08-09 | Gen Electric | Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor |
| US3284680A (en) * | 1963-11-26 | 1966-11-08 | Gen Electric | Semiconductor switch |
| US3458781A (en) * | 1966-07-18 | 1969-07-29 | Unitrode Corp | High-voltage planar semiconductor devices |
| US4364021A (en) * | 1977-10-07 | 1982-12-14 | General Electric Company | Low voltage varistor configuration |
| SE409789B (sv) * | 1978-01-10 | 1979-09-03 | Ericsson Telefon Ab L M | Overstromsskyddad transistor |
| FR2737343B1 (fr) * | 1995-07-28 | 1997-10-24 | Ferraz | Composant limiteur de courant et procede de realisation |
| DE102005023479B4 (de) * | 2005-05-20 | 2011-06-09 | Infineon Technologies Ag | Thyristor mit Zündstufenstruktur |
| DE102014107040A1 (de) | 2014-05-19 | 2015-11-19 | Epcos Ag | Elektronisches Bauelement und Verfahren zu dessen Herstellung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
| BE489418A (ja) * | 1948-06-26 | |||
| US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
| US2770761A (en) * | 1954-12-16 | 1956-11-13 | Bell Telephone Labor Inc | Semiconductor translators containing enclosed active junctions |
| US2813048A (en) * | 1954-06-24 | 1957-11-12 | Bell Telephone Labor Inc | Temperature gradient zone-melting |
-
0
- NL NL239104D patent/NL239104A/xx unknown
-
1958
- 1958-05-26 US US737883A patent/US2959504A/en not_active Expired - Lifetime
-
1959
- 1959-05-14 BE BE578696A patent/BE578696A/fr unknown
- 1959-05-16 DE DEW25639A patent/DE1090331B/de active Pending
- 1959-05-19 JP JP1567759A patent/JPS374662B1/ja active Pending
- 1959-05-20 GB GB17134/59A patent/GB923104A/en not_active Expired
- 1959-05-25 FR FR795541A patent/FR1225369A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3996601A (en) * | 1974-07-15 | 1976-12-07 | Hutson Jerald L | Shorting structure for multilayer semiconductor switching devices |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1090331B (de) | 1960-10-06 |
| FR1225369A (fr) | 1960-06-30 |
| NL239104A (ja) | 1900-01-01 |
| BE578696A (fr) | 1959-08-31 |
| JPS374662B1 (ja) | 1962-05-15 |
| US2959504A (en) | 1960-11-08 |
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