GB9109684D0 - A method for fabricating semiconductor articles - Google Patents

A method for fabricating semiconductor articles

Info

Publication number
GB9109684D0
GB9109684D0 GB919109684A GB9109684A GB9109684D0 GB 9109684 D0 GB9109684 D0 GB 9109684D0 GB 919109684 A GB919109684 A GB 919109684A GB 9109684 A GB9109684 A GB 9109684A GB 9109684 D0 GB9109684 D0 GB 9109684D0
Authority
GB
United Kingdom
Prior art keywords
fabricating semiconductor
semiconductor articles
articles
fabricating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB919109684A
Other versions
GB2243951A (en
GB2243951B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Goldstar Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Electron Co Ltd filed Critical Goldstar Electron Co Ltd
Publication of GB9109684D0 publication Critical patent/GB9109684D0/en
Publication of GB2243951A publication Critical patent/GB2243951A/en
Application granted granted Critical
Publication of GB2243951B publication Critical patent/GB2243951B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
GB9109684A 1990-05-08 1991-05-03 A method for fabricating semiconductor devices Expired - Fee Related GB2243951B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900006472A KR920008294B1 (en) 1990-05-08 1990-05-08 Method of manufacturing for semiconductor device

Publications (3)

Publication Number Publication Date
GB9109684D0 true GB9109684D0 (en) 1991-06-26
GB2243951A GB2243951A (en) 1991-11-13
GB2243951B GB2243951B (en) 1994-03-02

Family

ID=19298780

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9109684A Expired - Fee Related GB2243951B (en) 1990-05-08 1991-05-03 A method for fabricating semiconductor devices

Country Status (4)

Country Link
JP (1) JPH0719849B2 (en)
KR (1) KR920008294B1 (en)
DE (1) DE4114917A1 (en)
GB (1) GB2243951B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960004079B1 (en) * 1992-12-19 1996-03-26 Lg Semicon Co Ltd Contact hole forming method
ATE183335T1 (en) * 1995-05-23 1999-08-15 Siemens Ag SEMICONDUCTOR ARRANGEMENT WITH SELF-ALIGINATED CONTACTS AND METHOD FOR PRODUCING SAME

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183952A (en) * 1985-02-09 1986-08-16 Fujitsu Ltd Semiconductor memory device and manufacture thereof
DE3788107D1 (en) * 1986-10-16 1993-12-16 Siemens Ag Memory cell arrangement for dynamic semiconductor memories.
JPH01129440A (en) * 1987-11-14 1989-05-22 Fujitsu Ltd Semiconductor device
JP2682021B2 (en) * 1988-06-29 1997-11-26 富士通株式会社 Semiconductor memory device
JPH0279462A (en) * 1988-09-14 1990-03-20 Toshiba Corp Semiconductor memory

Also Published As

Publication number Publication date
GB2243951A (en) 1991-11-13
JPH05343635A (en) 1993-12-24
KR910020942A (en) 1991-12-20
KR920008294B1 (en) 1992-09-26
GB2243951B (en) 1994-03-02
DE4114917A1 (en) 1991-11-21
JPH0719849B2 (en) 1995-03-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060503