GB910656A - Improvements in or relating to devices for controlling a heavy-current circuit by means of a semi-conductor element of controllable conductivity - Google Patents
Improvements in or relating to devices for controlling a heavy-current circuit by means of a semi-conductor element of controllable conductivityInfo
- Publication number
- GB910656A GB910656A GB33323/59A GB3332359A GB910656A GB 910656 A GB910656 A GB 910656A GB 33323/59 A GB33323/59 A GB 33323/59A GB 3332359 A GB3332359 A GB 3332359A GB 910656 A GB910656 A GB 910656A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diode
- semi
- source
- electrodes
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000004888 barrier function Effects 0.000 abstract 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
- H03K3/351—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being unijunction transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Earth Drilling (AREA)
- Electronic Switches (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES60363A DE1174435B (de) | 1958-10-24 | 1958-10-24 | Lichtempfindlicher einkristalliner Halbleiterkoerper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB910656A true GB910656A (en) | 1962-11-14 |
Family
ID=7494053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB33323/59A Expired GB910656A (en) | 1958-10-24 | 1959-10-01 | Improvements in or relating to devices for controlling a heavy-current circuit by means of a semi-conductor element of controllable conductivity |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH375064A (enrdf_load_stackoverflow) |
| DE (1) | DE1174435B (enrdf_load_stackoverflow) |
| GB (1) | GB910656A (enrdf_load_stackoverflow) |
| NL (1) | NL244430A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3475666A (en) * | 1966-08-15 | 1969-10-28 | Jearld L Hutson | Integrated semiconductor switch system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3773289A (en) * | 1972-06-20 | 1973-11-20 | Bell Telephone Labor Inc | Photodetector delay equalizer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2702838A (en) * | 1951-11-15 | 1955-02-22 | Bell Telephone Labor Inc | Semiconductor signal translating device |
| US2805347A (en) * | 1954-05-27 | 1957-09-03 | Bell Telephone Labor Inc | Semiconductive devices |
| DE1041165B (de) * | 1956-06-14 | 1958-10-16 | Siemens Ag | Fadenhalbleiteranordnung mit zwei sperrfreien Basisanschluessen an den Fadenenden |
-
0
- NL NL244430D patent/NL244430A/xx unknown
-
1958
- 1958-10-24 DE DES60363A patent/DE1174435B/de active Granted
-
1959
- 1959-10-01 GB GB33323/59A patent/GB910656A/en not_active Expired
- 1959-10-15 CH CH7945859A patent/CH375064A/de unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3475666A (en) * | 1966-08-15 | 1969-10-28 | Jearld L Hutson | Integrated semiconductor switch system |
Also Published As
| Publication number | Publication date |
|---|---|
| NL244430A (enrdf_load_stackoverflow) | |
| DE1174435B (de) | 1964-07-23 |
| DE1174435C2 (enrdf_load_stackoverflow) | 1965-01-28 |
| CH375064A (de) | 1964-02-15 |
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