GB906159A - Silicon carbide and method of making the same - Google Patents
Silicon carbide and method of making the sameInfo
- Publication number
- GB906159A GB906159A GB9860/60A GB986060A GB906159A GB 906159 A GB906159 A GB 906159A GB 9860/60 A GB9860/60 A GB 9860/60A GB 986060 A GB986060 A GB 986060A GB 906159 A GB906159 A GB 906159A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- silicon carbide
- nitrogen
- aluminium
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 229910002804 graphite Inorganic materials 0.000 abstract 3
- 239000010439 graphite Substances 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- 229910001369 Brass Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000004677 Nylon Substances 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- -1 aluminium halide Chemical class 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000010951 brass Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005485 electric heating Methods 0.000 abstract 1
- 238000010304 firing Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920001778 nylon Polymers 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 238000001953 recrystallisation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/118—Carbide, e.g. SiC type
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Products (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US802462A US3074887A (en) | 1959-03-27 | 1959-03-27 | Process for adjusting the electrical characteristics of silicon carbide crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB906159A true GB906159A (en) | 1962-09-19 |
Family
ID=25183769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9860/60A Expired GB906159A (en) | 1959-03-27 | 1960-03-21 | Silicon carbide and method of making the same |
Country Status (4)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4774103A (en) * | 1985-03-14 | 1988-09-27 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method of reinforcing a ceramic body of silicon carbide |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508015A (en) * | 1966-06-09 | 1970-04-21 | Nat Res Corp | Electroluminescent diode and sound recording system |
| US3582573A (en) * | 1968-12-09 | 1971-06-01 | Norton Research Corp | Electroluminescent diode with 1/e width of less than one mil. and sound recording system |
| US4426405A (en) | 1981-02-20 | 1984-01-17 | Emerson Electric Co. | Method for producing improved silicon carbide resistance elements |
| US5080752A (en) * | 1991-07-08 | 1992-01-14 | The United States Of America As Represented By The Secretary Of The Navy | Consolidation of diamond packed powders |
| JP3384242B2 (ja) * | 1996-03-29 | 2003-03-10 | 株式会社豊田中央研究所 | 炭化珪素単結晶の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1246165A (en) * | 1914-05-16 | 1917-11-13 | Charles Ruzicka | Electrical-resistance material. |
| GB192382A (en) * | 1922-01-30 | 1924-04-22 | Kummler And Matter Ag | Improvements in and relating to electrical resistances |
| US1906963A (en) * | 1930-04-28 | 1933-05-02 | Globar Corp | Impregnated silicon carbide article and the manufacture thereof |
| BE502076A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1950-03-30 | |||
| NL87348C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1954-03-19 | 1900-01-01 | ||
| US2916460A (en) * | 1956-06-28 | 1959-12-08 | Carborundum Co | Silicon carbide resistance bodies and methods of making same |
-
0
- NL NL249549D patent/NL249549A/xx unknown
-
1959
- 1959-03-27 US US802462A patent/US3074887A/en not_active Expired - Lifetime
-
1960
- 1960-03-14 DE DE19601415606 patent/DE1415606A1/de active Pending
- 1960-03-21 GB GB9860/60A patent/GB906159A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4774103A (en) * | 1985-03-14 | 1988-09-27 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method of reinforcing a ceramic body of silicon carbide |
Also Published As
| Publication number | Publication date |
|---|---|
| NL249549A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1900-01-01 |
| US3074887A (en) | 1963-01-22 |
| DE1415606A1 (de) | 1968-10-10 |
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