GB903206A - A process for use in the production of a semi-conductor device - Google Patents
A process for use in the production of a semi-conductor deviceInfo
- Publication number
- GB903206A GB903206A GB4346360A GB4346360A GB903206A GB 903206 A GB903206 A GB 903206A GB 4346360 A GB4346360 A GB 4346360A GB 4346360 A GB4346360 A GB 4346360A GB 903206 A GB903206 A GB 903206A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gold
- tantalum
- tungsten
- coating
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
- B23K35/005—Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of a refractory metal
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H01L2924/0495—5th Group
- H01L2924/04953—TaN
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Laminated Bodies (AREA)
Abstract
903,206. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Dec. 16, 1960 [Dec. 18, 1959], No. 43463/60. Class 37. A tungsten member is bonded to a gold alloy electrode on a semi-conductor device by providing a coating of tantalum on the tungsten member and soldering it to the gold-containing electrode. A semi-conductor device comprises a silicon body 1 having electrodes 2, 3 of goldantimony and gold-boron alloys, respectively. Electrical connecting members 4, 5 of tungsten are each provided with a coating 6, 7 of tantalum by electro-deposition, rolling, fusion, vapour coating, spraying, welding, or by a powdermetallurgical process, and are arranged adjacent the alloy electrodes 2, 3. Copper conductors 10, 11 are secured to tungsten members 4, 5 using a hard solder layer 8, 9. The parts may be stacked and heated to about 800‹ C. in a furnace or by high-frequency heating. Electrodes 2, 3 then alloy with the silicon surface and simultaneously the gold in the alloy electrodes wets the tantalum layers, and solder layers 8, 9 also melt. On cooling the device is firmly bonded together. Electrode 3 may be of aluminium instead of gold-boron in which case tantalum coating 7 is not necessary as aluminium adequately wets tungsten. Tantalum may also be provided at 6a so that gold flows over these side faces to protect them against corrosion during subsequent etching.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1959S0066325 DE1110323C2 (en) | 1959-12-18 | 1959-12-18 | Process for the production of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB903206A true GB903206A (en) | 1962-08-15 |
Family
ID=7498732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4346360A Expired GB903206A (en) | 1959-12-18 | 1960-12-16 | A process for use in the production of a semi-conductor device |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH387807A (en) |
DE (1) | DE1110323C2 (en) |
FR (1) | FR1279527A (en) |
GB (1) | GB903206A (en) |
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1959
- 1959-12-18 DE DE1959S0066325 patent/DE1110323C2/en not_active Expired
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1960
- 1960-10-25 CH CH1190460A patent/CH387807A/en unknown
- 1960-11-24 FR FR844939A patent/FR1279527A/en not_active Expired
- 1960-12-16 GB GB4346360A patent/GB903206A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1110323C2 (en) | 1962-01-25 |
FR1279527A (en) | 1961-12-22 |
CH387807A (en) | 1965-02-15 |
DE1110323B (en) | 1961-07-06 |
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