GB899919A - Improvements in semi-conductive devices - Google Patents

Improvements in semi-conductive devices

Info

Publication number
GB899919A
GB899919A GB2982/59A GB298259A GB899919A GB 899919 A GB899919 A GB 899919A GB 2982/59 A GB2982/59 A GB 2982/59A GB 298259 A GB298259 A GB 298259A GB 899919 A GB899919 A GB 899919A
Authority
GB
United Kingdom
Prior art keywords
layer
central
pit
junction
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2982/59A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shockley Transistor Corp
Original Assignee
Shockley Transistor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL237230D priority Critical patent/NL237230A/xx
Application filed by Shockley Transistor Corp filed Critical Shockley Transistor Corp
Priority to GB2982/59A priority patent/GB899919A/en
Priority to DES61697A priority patent/DE1090330B/de
Priority to FR787834A priority patent/FR1229784A/fr
Publication of GB899919A publication Critical patent/GB899919A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
GB2982/59A 1958-03-19 1959-01-27 Improvements in semi-conductive devices Expired GB899919A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL237230D NL237230A (enExample) 1958-03-19
GB2982/59A GB899919A (en) 1958-03-19 1959-01-27 Improvements in semi-conductive devices
DES61697A DE1090330B (de) 1958-03-19 1959-02-09 Halbleiteranordnung mit einem Halbleiterkoerper mit zwei Zonen entgegengesetzten Leitfaehigkeitstyps und je einer Elektrode an den beiden Zonen
FR787834A FR1229784A (fr) 1958-03-19 1959-02-26 Dispositif semi-conducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1229784XA 1958-03-19 1958-03-19
GB2982/59A GB899919A (en) 1958-03-19 1959-01-27 Improvements in semi-conductive devices

Publications (1)

Publication Number Publication Date
GB899919A true GB899919A (en) 1962-06-27

Family

ID=9749687

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2982/59A Expired GB899919A (en) 1958-03-19 1959-01-27 Improvements in semi-conductive devices

Country Status (4)

Country Link
DE (1) DE1090330B (enExample)
FR (1) FR1229784A (enExample)
GB (1) GB899919A (enExample)
NL (1) NL237230A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1185729B (de) * 1961-03-01 1965-01-21 Siemens Ag Esaki-Diode mit Oberflaechenschutz des pn-UEbergangs
NL275617A (enExample) * 1961-03-10
NL277811A (enExample) * 1961-04-27 1900-01-01
US3152928A (en) * 1961-05-18 1964-10-13 Clevite Corp Semiconductor device and method
DE1208408B (de) * 1961-06-05 1966-01-05 Gen Electric Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps
DE1300164B (de) * 1967-01-26 1969-07-31 Itt Ind Gmbh Deutsche Verfahren zum Herstellen von Zenerdioden

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1000115B (de) * 1954-03-03 1957-01-03 Standard Elektrik Ag Verfahren zur Herstellung von Halbleiterschichtkristallen mit PN-UEbergang
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
US2792540A (en) * 1955-08-04 1957-05-14 Bell Telephone Labor Inc Junction transistor

Also Published As

Publication number Publication date
FR1229784A (fr) 1960-09-09
NL237230A (enExample)
DE1090330B (de) 1960-10-06

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