GB887542A - Improvements in or relating to the manufacture of junction transistors - Google Patents

Improvements in or relating to the manufacture of junction transistors

Info

Publication number
GB887542A
GB887542A GB40434/59A GB4043459A GB887542A GB 887542 A GB887542 A GB 887542A GB 40434/59 A GB40434/59 A GB 40434/59A GB 4043459 A GB4043459 A GB 4043459A GB 887542 A GB887542 A GB 887542A
Authority
GB
United Kingdom
Prior art keywords
manufacture
relating
junction transistors
indium
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40434/59A
Other languages
English (en)
Inventor
Tony Charles Denton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Company PLC
Original Assignee
General Electric Company PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL258171D priority Critical patent/NL258171A/xx
Application filed by General Electric Company PLC filed Critical General Electric Company PLC
Priority to GB40434/59A priority patent/GB887542A/en
Priority to DEG31005A priority patent/DE1129623B/de
Priority to FR845026A priority patent/FR1274235A/fr
Publication of GB887542A publication Critical patent/GB887542A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
GB40434/59A 1959-11-27 1959-11-27 Improvements in or relating to the manufacture of junction transistors Expired GB887542A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL258171D NL258171A (enrdf_load_stackoverflow) 1959-11-27
GB40434/59A GB887542A (en) 1959-11-27 1959-11-27 Improvements in or relating to the manufacture of junction transistors
DEG31005A DE1129623B (de) 1959-11-27 1960-11-25 Verfahren zum Herstellen von Flaechentransistoren
FR845026A FR1274235A (fr) 1959-11-27 1960-11-25 Fabrication de transistors à jonction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB40434/59A GB887542A (en) 1959-11-27 1959-11-27 Improvements in or relating to the manufacture of junction transistors

Publications (1)

Publication Number Publication Date
GB887542A true GB887542A (en) 1962-01-17

Family

ID=10414888

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40434/59A Expired GB887542A (en) 1959-11-27 1959-11-27 Improvements in or relating to the manufacture of junction transistors

Country Status (3)

Country Link
DE (1) DE1129623B (enrdf_load_stackoverflow)
GB (1) GB887542A (enrdf_load_stackoverflow)
NL (1) NL258171A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1343186B1 (en) * 2002-03-06 2007-01-03 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and fuse element thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
NL190760A (enrdf_load_stackoverflow) * 1954-02-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1343186B1 (en) * 2002-03-06 2007-01-03 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and fuse element thereof

Also Published As

Publication number Publication date
DE1129623B (de) 1962-05-17
NL258171A (enrdf_load_stackoverflow)

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