GB886232A - Improvements relating to the formation of p-n junctions in semi-conductor material - Google Patents

Improvements relating to the formation of p-n junctions in semi-conductor material

Info

Publication number
GB886232A
GB886232A GB12070/57A GB1207057A GB886232A GB 886232 A GB886232 A GB 886232A GB 12070/57 A GB12070/57 A GB 12070/57A GB 1207057 A GB1207057 A GB 1207057A GB 886232 A GB886232 A GB 886232A
Authority
GB
United Kingdom
Prior art keywords
type
junctions
antimony
compounds
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12070/57A
Other languages
English (en)
Inventor
Douglas Richard Chick
Stanley Ernest Hunt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1194374D priority Critical patent/FR1194374A/fr
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB12070/57A priority patent/GB886232A/en
Publication of GB886232A publication Critical patent/GB886232A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Semiconductor Lasers (AREA)
GB12070/57A 1957-04-12 1957-04-12 Improvements relating to the formation of p-n junctions in semi-conductor material Expired GB886232A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1194374D FR1194374A (enExample) 1957-04-12
GB12070/57A GB886232A (en) 1957-04-12 1957-04-12 Improvements relating to the formation of p-n junctions in semi-conductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB12070/57A GB886232A (en) 1957-04-12 1957-04-12 Improvements relating to the formation of p-n junctions in semi-conductor material

Publications (1)

Publication Number Publication Date
GB886232A true GB886232A (en) 1962-01-03

Family

ID=9997895

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12070/57A Expired GB886232A (en) 1957-04-12 1957-04-12 Improvements relating to the formation of p-n junctions in semi-conductor material

Country Status (2)

Country Link
FR (1) FR1194374A (enExample)
GB (1) GB886232A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967982A (en) * 1974-07-15 1976-07-06 Siemens Aktiengesellschaft Method of doping a semiconductor layer
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967982A (en) * 1974-07-15 1976-07-06 Siemens Aktiengesellschaft Method of doping a semiconductor layer
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation

Also Published As

Publication number Publication date
FR1194374A (enExample) 1959-11-09

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