GB881499A - Improvements relating to p-n junction semi-conductor devices - Google Patents
Improvements relating to p-n junction semi-conductor devicesInfo
- Publication number
- GB881499A GB881499A GB1305358A GB1305358A GB881499A GB 881499 A GB881499 A GB 881499A GB 1305358 A GB1305358 A GB 1305358A GB 1305358 A GB1305358 A GB 1305358A GB 881499 A GB881499 A GB 881499A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- impurity
- semi
- conductivity type
- growth rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- 238000001953 recrystallisation Methods 0.000 abstract 2
- 238000005204 segregation Methods 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000012190 activator Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000000750 progressive effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
881,499. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. March 25, 1959 [April 24, 1958], No. 13063/58. Class 37. A multiple junction semi-conductor device is made by locally melting part of a semi-conductor crystal of one conductivity type containing an acceptor and a donor impurity, the dominant one of which has a much lower segregation coefficient which, however, increases more rapidly with increase of growth rate than that of the other impurity. On recrystallization the impurity of higher segregation coefficient predominates in the initially recrystallizing material, but as the growth rate increases with the decreasing temperature gradient across the solid-liquid interface resulting from cooling of the crystal, the other impurity again predominates to give rise to a second PN junction. After recrystallization is completed the outermost zone of said one conductivity type is cut or ground to form a flat surface and an activator pellet characteristic of the opposite conductivity type fused to it to form a further PN junction. Methods of grinding and lapping a number of bodies simultaneously are described. In the embodiment the starting crystal is of N type germanium doped with gallium and antimony and the local heating is effected in inert gas such as nitrogen by an oxyhydrogen torch. The progressive increase in growth rate is controlled by varying the rate at which the torch is withdrawn or by separate cooling means. The final junction is formed by fusing indium to the outer N zone in a two-stage heating process. Nickel leads are finally simultaneously tin soldered to the main body and fused to the indium pellet respectively to form a twoterminal device exhibiting the forward characteristic shown in Fig. 6. Specifications 727,900, 752,457 and 781,795 are referred to.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL238556D NL238556A (en) | 1958-04-24 | ||
| GB1305358A GB881499A (en) | 1958-04-24 | 1958-04-24 | Improvements relating to p-n junction semi-conductor devices |
| FR793157A FR1230673A (en) | 1958-04-24 | 1959-04-24 | Improvements to Multi-Junction Semiconductor Devices |
| DES62761A DE1131326B (en) | 1958-04-24 | 1959-04-24 | Method for producing pnpn or npnp semiconductor arrangements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1305358A GB881499A (en) | 1958-04-24 | 1958-04-24 | Improvements relating to p-n junction semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB881499A true GB881499A (en) | 1961-11-01 |
Family
ID=10015926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1305358A Expired GB881499A (en) | 1958-04-24 | 1958-04-24 | Improvements relating to p-n junction semi-conductor devices |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1131326B (en) |
| FR (1) | FR1230673A (en) |
| GB (1) | GB881499A (en) |
| NL (1) | NL238556A (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL87620C (en) * | 1952-11-14 | |||
| BE525774A (en) * | 1953-01-16 | |||
| NL185041C (en) * | 1953-03-20 | Gakken Co Ltd | DEVICE FOR RECORDING AND PLAYING BACK OF AUDIO INFORMATION ON, RESPECTIVELY OFF, A MAGNETIC SHEET. | |
| BE530566A (en) * | 1953-07-22 | |||
| GB781795A (en) * | 1954-03-12 | 1957-08-28 | Gen Electric | Improvements relating to the manufacture of p-n junction devices |
-
0
- NL NL238556D patent/NL238556A/xx unknown
-
1958
- 1958-04-24 GB GB1305358A patent/GB881499A/en not_active Expired
-
1959
- 1959-04-24 FR FR793157A patent/FR1230673A/en not_active Expired
- 1959-04-24 DE DES62761A patent/DE1131326B/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR1230673A (en) | 1960-09-19 |
| DE1131326B (en) | 1962-06-14 |
| NL238556A (en) |
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