GB881127A - Improvements in or relating to transistor circuits - Google Patents

Improvements in or relating to transistor circuits

Info

Publication number
GB881127A
GB881127A GB1732259A GB1732259A GB881127A GB 881127 A GB881127 A GB 881127A GB 1732259 A GB1732259 A GB 1732259A GB 1732259 A GB1732259 A GB 1732259A GB 881127 A GB881127 A GB 881127A
Authority
GB
United Kingdom
Prior art keywords
base
diode
emitter
transistor
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1732259A
Inventor
David Martin Leakey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB1732259A priority Critical patent/GB881127A/en
Publication of GB881127A publication Critical patent/GB881127A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6285—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors with several outputs only combined with selecting means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08126—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transitor switches

Landscapes

  • Time-Division Multiplex Systems (AREA)
  • Electronic Switches (AREA)

Abstract

881,127. Transistor switching circuits. GENERAL ELECTRIC CO. Ltd. Aug. 19, 1960 [May 21, 1959], No. 17322/59. Class 40(6). A diode is connected between base and emitter electrodes of a transistor to limit the input voltage to a safe value and a further diode is connected in the emitter circuit in series with the base-emitter path and the input terminals, the further diode being non-conducting when the transistor is cut off so as to prevent the first diode from shunting the input. In Fig. 1 a positive pulse applied to the base will cause the transistor to cut off. Diode 3 limits the base-emitter voltage to a safe value and diode 4 cuts off to prevent the output circuit 7 from loading the input circuit. In Fig. 2 (not shown) the invention is applied to a common emitter stage while in Fig. 3 it is applied to a common base stage, gating potentials being applied to the base terminals to select appropriate pulses from a pulse multiplex wave applied at 20.
GB1732259A 1959-05-21 1959-05-21 Improvements in or relating to transistor circuits Expired GB881127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1732259A GB881127A (en) 1959-05-21 1959-05-21 Improvements in or relating to transistor circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1732259A GB881127A (en) 1959-05-21 1959-05-21 Improvements in or relating to transistor circuits

Publications (1)

Publication Number Publication Date
GB881127A true GB881127A (en) 1961-11-01

Family

ID=10093149

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1732259A Expired GB881127A (en) 1959-05-21 1959-05-21 Improvements in or relating to transistor circuits

Country Status (1)

Country Link
GB (1) GB881127A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3167662A (en) * 1962-02-02 1965-01-26 Gen Electric High-speed transistor flip-flops

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3167662A (en) * 1962-02-02 1965-01-26 Gen Electric High-speed transistor flip-flops

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