GB876400A - Improvements in or relating to p-n-p-n-type semi-conductor devices - Google Patents
Improvements in or relating to p-n-p-n-type semi-conductor devicesInfo
- Publication number
- GB876400A GB876400A GB6279/58A GB627958A GB876400A GB 876400 A GB876400 A GB 876400A GB 6279/58 A GB6279/58 A GB 6279/58A GB 627958 A GB627958 A GB 627958A GB 876400 A GB876400 A GB 876400A
- Authority
- GB
- United Kingdom
- Prior art keywords
- acceptor
- donor
- zone
- face
- alloying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000005275 alloying Methods 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 239000002140 antimony alloy Substances 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
876,400. Semi-conductor devices. SIEMENS & HALSKE A.G. Feb. 26, 1958 [Feb. 26, 1957], No. 6279/58. Class 37. A method of making a PNPN device comprises simultaneously diffusing into one surface of an N(P) type semi-conductor crystal a donor (acceptor) with a low diffusion coefficient and an acceptor (donor) with a high diffusion coefficient to form an NPN(PNP) zone arrangement, applying a first electrode in ohmic contact with the N(P) zone at said one surface, and alloying the end of a longitudinally extending member comprising an acceptor (donor) to the other N(P) zone to form a PN junction therewith. In an example antimony and aluminium are simultaneously diffused into one face of an N-type silicon body and an aluminium wire or pin alloyed to the opposite face of the resulting body. An electrode connection is provided on the surface N-type layer on the first face by vapour depositing gold or a gold-antimony alloy therein or by alloying a lead pellet thereto. The device which has a voltage current characteristic as shown in Fig. 2 may be used as a switch or relaxation oscillator.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE876400X | 1957-02-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB876400A true GB876400A (en) | 1961-08-30 |
Family
ID=6817686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6279/58A Expired GB876400A (en) | 1957-02-26 | 1958-02-26 | Improvements in or relating to p-n-p-n-type semi-conductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB876400A (en) |
-
1958
- 1958-02-26 GB GB6279/58A patent/GB876400A/en not_active Expired
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