GB874349A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB874349A
GB874349A GB18357/59A GB1835759A GB874349A GB 874349 A GB874349 A GB 874349A GB 18357/59 A GB18357/59 A GB 18357/59A GB 1835759 A GB1835759 A GB 1835759A GB 874349 A GB874349 A GB 874349A
Authority
GB
United Kingdom
Prior art keywords
oxide
wax
wafer
junction
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18357/59A
Other languages
English (en)
Inventor
Reginald Thomas Galbraith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE570279D priority Critical patent/BE570279A/xx
Priority to GB25388/57A priority patent/GB815699A/en
Priority claimed from GB25388/57A external-priority patent/GB815699A/en
Priority to CH6203858A priority patent/CH365804A/de
Priority to FR1212132D priority patent/FR1212132A/fr
Priority claimed from GB12744/59A external-priority patent/GB870599A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB18357/59A priority patent/GB874349A/en
Priority to FR824364A priority patent/FR77527E/fr
Priority to FR828393A priority patent/FR77789E/fr
Publication of GB874349A publication Critical patent/GB874349A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
GB18357/59A 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices Expired GB874349A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
BE570279D BE570279A (enExample) 1957-08-12
GB25388/57A GB815699A (en) 1959-05-29 1957-08-12 Improvements in or relating to semi-conductor devices and methods of manufacture thereof
CH6203858A CH365804A (de) 1957-08-12 1958-07-22 Halbleitervorrichtung mit mindestens einem Übergang zwischen Zonen verschiedenen Leitfähigkeitstyps
FR1212132D FR1212132A (fr) 1957-08-12 1958-08-11 Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci
GB18357/59A GB874349A (en) 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices
FR824364A FR77527E (fr) 1957-08-12 1960-04-14 Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci
FR828393A FR77789E (fr) 1957-08-12 1960-05-27 Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB25388/57A GB815699A (en) 1959-05-29 1957-08-12 Improvements in or relating to semi-conductor devices and methods of manufacture thereof
GB12744/59A GB870599A (en) 1959-04-15 1959-04-15 Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof
GB18357/59A GB874349A (en) 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices
FR824364A FR77527E (fr) 1957-08-12 1960-04-14 Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci

Publications (1)

Publication Number Publication Date
GB874349A true GB874349A (en) 1961-08-02

Family

ID=62527908

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18357/59A Expired GB874349A (en) 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices

Country Status (4)

Country Link
BE (1) BE570279A (enExample)
CH (1) CH365804A (enExample)
FR (2) FR1212132A (enExample)
GB (1) GB874349A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225304B (de) * 1961-11-16 1966-09-22 Telefunken Patent Diffusionsverfahren zum Herstellen eines Halbleiterbauelementes

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL295980A (enExample) * 1962-07-31
US3475660A (en) * 1967-12-01 1969-10-28 Int Rectifier Corp Hollow cylindrical semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225304B (de) * 1961-11-16 1966-09-22 Telefunken Patent Diffusionsverfahren zum Herstellen eines Halbleiterbauelementes

Also Published As

Publication number Publication date
FR77527E (fr) 1962-03-16
FR1212132A (fr) 1960-03-22
CH365804A (de) 1962-11-30
BE570279A (enExample) 1900-01-01

Similar Documents

Publication Publication Date Title
US4092445A (en) Process for forming porous semiconductor region using electrolyte without electrical source
GB816799A (en) Improvements in or relating to semi-conductor devices and to methods of making them
GB991174A (en) Semiconductor devices and methods of making them
US3231421A (en) Semiconductor contact
US4270136A (en) MIS Device having a metal and insulating layer containing at least one cation-trapping element
US3244555A (en) Semiconductor devices
Revesz Anodic Oxidation of Silicon in KNO 3‐N‐Methylacetamide Solution: Interface Properties
US3627598A (en) Nitride passivation of mesa transistors by phosphovapox lifting
GB874349A (en) Improvements in or relating to semiconductor devices
JPS54116888A (en) Manufacture of dielectric separate substrate
US3541676A (en) Method of forming field-effect transistors utilizing doped insulators as activator source
US2725316A (en) Method of preparing pn junctions in semiconductors
GB1488329A (en) Semiconductor devices
GB1090649A (en) Surface treatment for semiconductor devices
US4286277A (en) Planar indium antimonide diode array and method of manufacture
US4007297A (en) Method of treating semiconductor device to improve its electrical characteristics
US3145126A (en) Method of making diffused junctions
US3457631A (en) Method of making a high frequency transistor structure
US3133840A (en) Stabilization of junction devices with phosphorous tribromide
US3376172A (en) Method of forming a semiconductor device with a depletion area
GB1215088A (en) Process for affixing thin film electrical contacts to a semiconductor body comprising silicon carbide
GB873484A (en) Improvements in and relating to the manufacture of semiconductive devices
JPS54109765A (en) Manufacture of semiconductor device
US3384518A (en) Method for making semiconductor devices
US3730800A (en) Method of making germanium semiconductor device