GB853979A - Improvements in or relating to the preparation of monocrystalline structures - Google Patents

Improvements in or relating to the preparation of monocrystalline structures

Info

Publication number
GB853979A
GB853979A GB6936/57A GB693657A GB853979A GB 853979 A GB853979 A GB 853979A GB 6936/57 A GB6936/57 A GB 6936/57A GB 693657 A GB693657 A GB 693657A GB 853979 A GB853979 A GB 853979A
Authority
GB
United Kingdom
Prior art keywords
crystal
germanium
plate
substrate
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6936/57A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB853979A publication Critical patent/GB853979A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB6936/57A 1956-03-05 1957-03-01 Improvements in or relating to the preparation of monocrystalline structures Expired GB853979A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US853979XA 1956-03-05 1956-03-05

Publications (1)

Publication Number Publication Date
GB853979A true GB853979A (en) 1960-11-16

Family

ID=22191347

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6936/57A Expired GB853979A (en) 1956-03-05 1957-03-01 Improvements in or relating to the preparation of monocrystalline structures

Country Status (5)

Country Link
BE (1) BE555438A (enrdf_load_html_response)
DE (1) DE1087425B (enrdf_load_html_response)
FR (1) FR1172760A (enrdf_load_html_response)
GB (1) GB853979A (enrdf_load_html_response)
NL (2) NL215006A (enrdf_load_html_response)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3134694A (en) * 1960-08-25 1964-05-26 Siemens Ag Apparatus for accurately controlling the production of semiconductor rods
US3186880A (en) * 1962-10-10 1965-06-01 Martin Marietta Corp Method of producing unsupported epitaxial films of germanium by evaporating the substrate
US3188182A (en) * 1961-06-29 1965-06-08 Gen Electric Use of the working material as part of the crystal making apparatus
US3271209A (en) * 1962-02-23 1966-09-06 Siemens Ag Method of eliminating semiconductor material precipitated upon a heater in epitaxial production of semiconductor members

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL275889A (enrdf_load_html_response) * 1961-03-14
US3332796A (en) * 1961-06-26 1967-07-25 Philips Corp Preparing nickel ferrite single crystals on a monocrystalline substrate
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
DE1241811B (de) * 1962-01-12 1967-06-08 Itt Ind Ges Mit Beschraenkter Verfahren zur Herstellung eindiffundierter Zonen von Verunreinigungen in einem Halbleiterkoerper
AT246789B (de) * 1962-06-04 1966-05-10 Philips Nv Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung
FR1461335A (fr) * 1963-01-14 1966-02-25 Loire Atel Forges Procédé pour le traitement de surfaces de pièces métalliques permettant des fonctionnements sans lubrification
DE3931587A1 (de) * 1989-09-22 1991-04-04 Standard Elektrik Lorenz Ag Verfahren zum herstellen von halbleiterschichten

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3134694A (en) * 1960-08-25 1964-05-26 Siemens Ag Apparatus for accurately controlling the production of semiconductor rods
US3188182A (en) * 1961-06-29 1965-06-08 Gen Electric Use of the working material as part of the crystal making apparatus
US3271209A (en) * 1962-02-23 1966-09-06 Siemens Ag Method of eliminating semiconductor material precipitated upon a heater in epitaxial production of semiconductor members
US3186880A (en) * 1962-10-10 1965-06-01 Martin Marietta Corp Method of producing unsupported epitaxial films of germanium by evaporating the substrate

Also Published As

Publication number Publication date
NL215006A (enrdf_load_html_response)
BE555438A (enrdf_load_html_response)
NL105256C (enrdf_load_html_response)
FR1172760A (fr) 1959-02-16
DE1087425B (de) 1960-08-18

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