GB846567A - Improvements in or relating to methods of treating semi-conductive bodies - Google Patents

Improvements in or relating to methods of treating semi-conductive bodies

Info

Publication number
GB846567A
GB846567A GB33520/56A GB3352056A GB846567A GB 846567 A GB846567 A GB 846567A GB 33520/56 A GB33520/56 A GB 33520/56A GB 3352056 A GB3352056 A GB 3352056A GB 846567 A GB846567 A GB 846567A
Authority
GB
United Kingdom
Prior art keywords
quartz
mixture
type
type layer
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33520/56A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB846567A publication Critical patent/GB846567A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P32/00—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
    • C23C10/34—Embedding in a powder mixture, i.e. pack cementation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB33520/56A 1955-11-05 1956-11-02 Improvements in or relating to methods of treating semi-conductive bodies Expired GB846567A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL846567X 1955-11-05

Publications (1)

Publication Number Publication Date
GB846567A true GB846567A (en) 1960-08-31

Family

ID=19845183

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33520/56A Expired GB846567A (en) 1955-11-05 1956-11-02 Improvements in or relating to methods of treating semi-conductive bodies

Country Status (5)

Country Link
US (1) US2873221A (cg-RX-API-DMAC10.html)
BE (1) BE552316A (cg-RX-API-DMAC10.html)
FR (1) FR1166477A (cg-RX-API-DMAC10.html)
GB (1) GB846567A (cg-RX-API-DMAC10.html)
NL (2) NL201780A (cg-RX-API-DMAC10.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
NL228981A (cg-RX-API-DMAC10.html) * 1957-06-25
NL235544A (cg-RX-API-DMAC10.html) * 1958-01-28
US2974073A (en) * 1958-12-04 1961-03-07 Rca Corp Method of making phosphorus diffused silicon semiconductor devices
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
DE1232265B (de) * 1960-03-11 1967-01-12 Philips Patentverwaltung Verfahren zur Herstellung eines Legierungsdiffusionstransistors
US3114663A (en) * 1960-03-29 1963-12-17 Rca Corp Method of providing semiconductor wafers with protective and masking coatings
NL268470A (cg-RX-API-DMAC10.html) * 1960-11-22
DE2754833A1 (de) * 1977-12-09 1979-06-13 Ibm Deutschland Phosphordiffusionsverfahren fuer halbleiteranwendungen
NL1016255C2 (nl) * 2000-09-22 2002-03-25 Kooi Bv Heftruck.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2071533A (en) * 1935-02-28 1937-02-23 Globe Steel Tubes Co Process of cementation
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
US2622043A (en) * 1949-09-30 1952-12-16 Thompson Prod Inc Chromizing pack and method
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2804405A (en) * 1954-12-24 1957-08-27 Bell Telephone Labor Inc Manufacture of silicon devices
NL109817C (cg-RX-API-DMAC10.html) * 1955-12-02

Also Published As

Publication number Publication date
BE552316A (cg-RX-API-DMAC10.html)
US2873221A (en) 1959-02-10
NL100917C (cg-RX-API-DMAC10.html)
FR1166477A (fr) 1958-11-12
NL201780A (cg-RX-API-DMAC10.html)

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