GB842875A - Improvements in or relating to semiconductors and apparatus utilizing same - Google Patents
Improvements in or relating to semiconductors and apparatus utilizing sameInfo
- Publication number
- GB842875A GB842875A GB28330/56A GB2833056A GB842875A GB 842875 A GB842875 A GB 842875A GB 28330/56 A GB28330/56 A GB 28330/56A GB 2833056 A GB2833056 A GB 2833056A GB 842875 A GB842875 A GB 842875A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- emitter
- rectifying
- electrodes
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
842,875. Semi-conductor circuits; amplitude modulating systems. PHILCO CORPORATION. Sept. 17, 1956 [Sept. 19, 1955], No. 28330/56. Classes 40(5) and 40(6). [Also in Group XXXVI] A signal translating device comprises a semiconductor body having an emitter and collector electrodes oppositely disposed on two opposing surfaces of the body, a base electrode and a rectifying electrode to the body separating the portion associated with the emitter and collector from that associated with the base electrode. Figures 1 and 3 show a transistor comprising a semi-conductor body 10 with a central emitter 12 and collector 14, and a base electrode 20. Annular rectifying electrodes 22 and 24 are disposed between the emitter and base and the collector and base respectively. Electrodes 22 and 24 when reverse biased, control the base-emitter current due to the formation of a depletion layer of variable width in the conducting path. Figure 4 shows a high gain, high input impedance amplifier in which the emitter is earthed and the collector and rectifying electrodes 22 and 24 are reverse biased. Input signals applied from source 52 to rectifying electrode 22 result in like phase output signals at the collector 14. An adding circuit may be provided by applying a second signal to rectifying electrode 24, or a modulating circuit by applying a second signal to emitter electrode 12. Pulses may be generated by applying a large amplitude sine wave to input electrode 22. A phase inverted output signal may be obtained from the emitter electrode by adding an impedance in the earth lead thereto. In an alternative arrangement, the base electrode is central and the emitter and collector electrodes are in the form of rings surrounding the two rectifying electrodes; the inner edge of the electrode may be slightly nearer to the base electrode than is the edge of the emitter electrode. The rectifying electrodes may be in the shape of bars lying between the base and the other two electrodes, and one rectifying electrode only may be used, the opposite region being coated with epoxy resin to avoid the risk of conducting contaminants. An additional pair of rectifying electrodes may be placed between the first rectifying pair 22 and 24, to collect stray carriers which might otherwise reach electrodes 22 or 24. The semi-conductor may consist of germanium, silicon or indium antimonide and the electrode materials of indium or zinc, or tin-soldered nickel. Specifications 810,862, 810,946, 817,953 and 824,484 are referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US842875XA | 1955-09-19 | 1955-09-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB842875A true GB842875A (en) | 1960-07-27 |
Family
ID=22183987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB28330/56A Expired GB842875A (en) | 1955-09-19 | 1956-09-17 | Improvements in or relating to semiconductors and apparatus utilizing same |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB842875A (en) |
-
1956
- 1956-09-17 GB GB28330/56A patent/GB842875A/en not_active Expired
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