GB839810A - Improvements in processes for manufacturing semi-conductor materials - Google Patents

Improvements in processes for manufacturing semi-conductor materials

Info

Publication number
GB839810A
GB839810A GB2022858A GB2022858A GB839810A GB 839810 A GB839810 A GB 839810A GB 2022858 A GB2022858 A GB 2022858A GB 2022858 A GB2022858 A GB 2022858A GB 839810 A GB839810 A GB 839810A
Authority
GB
United Kingdom
Prior art keywords
type
bismuth
semi
telluride
processes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2022858A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Publication of GB839810A publication Critical patent/GB839810A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Measurement Of Radiation (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

839,810. Semi-conductors. COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. June 24,1958 [July 9, 1957], No. 20228/58. Class 37. A P-type semi-conductor bismuth compound is powdered, moulded under pressure and sintered to convert it to N-type. Bismuth telluride, and bismuth-antimony telluride are preferred materials. The sintering treatment may be applied for 1-2 hours at a temperature of 550‹ C. The material may be used for thermo-electric and Peltier effect cooling purposes (e.g. cooling a transistor), the N-type material being associated with P-type bismuth telluride or P-type sintered zinc antimonide.
GB2022858A 1957-07-09 1958-06-24 Improvements in processes for manufacturing semi-conductor materials Expired GB839810A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1178317T 1957-07-09

Publications (1)

Publication Number Publication Date
GB839810A true GB839810A (en) 1960-06-29

Family

ID=33443383

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2022858A Expired GB839810A (en) 1957-07-09 1958-06-24 Improvements in processes for manufacturing semi-conductor materials

Country Status (2)

Country Link
FR (1) FR1178317A (en)
GB (1) GB839810A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1139586B (en) * 1961-04-27 1962-11-15 Hoechst Ag Process for the production of mechanically stable semiconductor bodies for semiconductor components from high-molecular organic semiconducting compounds

Also Published As

Publication number Publication date
FR1178317A (en) 1959-05-06

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