GB8306288D0 - Gate memory device - Google Patents

Gate memory device

Info

Publication number
GB8306288D0
GB8306288D0 GB838306288A GB8306288A GB8306288D0 GB 8306288 D0 GB8306288 D0 GB 8306288D0 GB 838306288 A GB838306288 A GB 838306288A GB 8306288 A GB8306288 A GB 8306288A GB 8306288 D0 GB8306288 D0 GB 8306288D0
Authority
GB
United Kingdom
Prior art keywords
memory device
gate memory
gate
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB838306288A
Other versions
GB2116367A (en
GB2116367B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Priority to GB08306288A priority Critical patent/GB2116367B/en
Publication of GB8306288D0 publication Critical patent/GB8306288D0/en
Publication of GB2116367A publication Critical patent/GB2116367A/en
Application granted granted Critical
Publication of GB2116367B publication Critical patent/GB2116367B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
GB08306288A 1982-03-09 1983-03-08 An electrically alterable, nonvolatile floating gate memory device Expired GB2116367B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08306288A GB2116367B (en) 1982-03-09 1983-03-08 An electrically alterable, nonvolatile floating gate memory device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB8206908 1982-03-09
US43727182A 1982-10-18 1982-10-18
GB08306288A GB2116367B (en) 1982-03-09 1983-03-08 An electrically alterable, nonvolatile floating gate memory device

Publications (3)

Publication Number Publication Date
GB8306288D0 true GB8306288D0 (en) 1983-04-13
GB2116367A GB2116367A (en) 1983-09-21
GB2116367B GB2116367B (en) 1985-10-02

Family

ID=27261504

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08306288A Expired GB2116367B (en) 1982-03-09 1983-03-08 An electrically alterable, nonvolatile floating gate memory device

Country Status (1)

Country Link
GB (1) GB2116367B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1213229B (en) * 1984-10-23 1989-12-14 Ates Componenti Elettron MERGED NON-VOLATILE MEMORY CELL WITH FLOATING GATE OVERLAPPING THE CONTROL AND SELECTION GATE.

Also Published As

Publication number Publication date
GB2116367A (en) 1983-09-21
GB2116367B (en) 1985-10-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee