GB820190A - Silicon power rectifier - Google Patents

Silicon power rectifier

Info

Publication number
GB820190A
GB820190A GB21378/57A GB2137857A GB820190A GB 820190 A GB820190 A GB 820190A GB 21378/57 A GB21378/57 A GB 21378/57A GB 2137857 A GB2137857 A GB 2137857A GB 820190 A GB820190 A GB 820190A
Authority
GB
United Kingdom
Prior art keywords
silicon
molybdenum
gold
rectifier
disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21378/57A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB820190A publication Critical patent/GB820190A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10P95/50—
    • H10W72/00—
    • H10W76/10—
    • H10W76/17—
    • H10W76/60—

Landscapes

  • Die Bonding (AREA)
GB21378/57A 1956-07-06 1957-07-05 Silicon power rectifier Expired GB820190A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US596243A US2854612A (en) 1956-07-06 1956-07-06 Silicon power rectifier

Publications (1)

Publication Number Publication Date
GB820190A true GB820190A (en) 1959-09-16

Family

ID=24386545

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21378/57A Expired GB820190A (en) 1956-07-06 1957-07-05 Silicon power rectifier

Country Status (5)

Country Link
US (1) US2854612A (cg-RX-API-DMAC10.html)
BE (1) BE558881A (cg-RX-API-DMAC10.html)
CH (1) CH374770A (cg-RX-API-DMAC10.html)
FR (1) FR72093E (cg-RX-API-DMAC10.html)
GB (1) GB820190A (cg-RX-API-DMAC10.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3064341A (en) * 1956-12-26 1962-11-20 Ibm Semiconductor devices
NL224227A (cg-RX-API-DMAC10.html) * 1957-01-29
US2964830A (en) * 1957-01-31 1960-12-20 Westinghouse Electric Corp Silicon semiconductor devices
FR1192082A (fr) * 1957-03-20 1959-10-23 Bosch Gmbh Robert Semi-conducteur de puissance
US2945285A (en) * 1957-06-03 1960-07-19 Sperry Rand Corp Bonding of semiconductor contact electrodes
US3031747A (en) * 1957-12-31 1962-05-01 Tung Sol Electric Inc Method of forming ohmic contact to silicon
US3109225A (en) * 1958-08-29 1963-11-05 Rca Corp Method of mounting a semiconductor device
US3093882A (en) * 1958-09-30 1963-06-18 Siemens Ag Method for producing a silicon semiconductor device
US3151949A (en) * 1959-09-29 1964-10-06 Bbc Brown Boveri & Cie Manufacture of semiconductor rectifier
US3178271A (en) * 1960-02-26 1965-04-13 Philco Corp High temperature ohmic joint for silicon semiconductor devices and method of forming same
NL269346A (cg-RX-API-DMAC10.html) * 1960-09-20
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
FR1386343A (fr) * 1963-11-26 1965-01-22 Mémoires matricielles à cryosars bistables et procédé de fabrication de telles mémoires
US3518498A (en) * 1967-12-27 1970-06-30 Gen Electric High-q,high-frequency silicon/silicon-dioxide capacitor
US4358784A (en) * 1979-11-30 1982-11-09 International Rectifier Corporation Clad molybdenum disks for alloyed diode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2441603A (en) * 1943-07-28 1948-05-18 Bell Telephone Labor Inc Electrical translating materials and method of making them
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes

Also Published As

Publication number Publication date
CH374770A (de) 1964-01-31
US2854612A (en) 1958-09-30
BE558881A (cg-RX-API-DMAC10.html) 1900-01-01
FR72093E (fr) 1960-03-21

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