BE558881A - - Google Patents
Info
- Publication number
- BE558881A BE558881A BE558881DA BE558881A BE 558881 A BE558881 A BE 558881A BE 558881D A BE558881D A BE 558881DA BE 558881 A BE558881 A BE 558881A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P95/00—
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- H10P95/50—
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- H10W72/00—
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- H10W76/10—
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- H10W76/17—
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- H10W76/60—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US596243A US2854612A (en) | 1956-07-06 | 1956-07-06 | Silicon power rectifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE558881A true BE558881A (cg-RX-API-DMAC10.html) | 1900-01-01 |
Family
ID=24386545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE558881D BE558881A (cg-RX-API-DMAC10.html) | 1956-07-06 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2854612A (cg-RX-API-DMAC10.html) |
| BE (1) | BE558881A (cg-RX-API-DMAC10.html) |
| CH (1) | CH374770A (cg-RX-API-DMAC10.html) |
| FR (1) | FR72093E (cg-RX-API-DMAC10.html) |
| GB (1) | GB820190A (cg-RX-API-DMAC10.html) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3064341A (en) * | 1956-12-26 | 1962-11-20 | Ibm | Semiconductor devices |
| NL224227A (cg-RX-API-DMAC10.html) * | 1957-01-29 | |||
| US2964830A (en) * | 1957-01-31 | 1960-12-20 | Westinghouse Electric Corp | Silicon semiconductor devices |
| FR1192082A (fr) * | 1957-03-20 | 1959-10-23 | Bosch Gmbh Robert | Semi-conducteur de puissance |
| US2945285A (en) * | 1957-06-03 | 1960-07-19 | Sperry Rand Corp | Bonding of semiconductor contact electrodes |
| US3031747A (en) * | 1957-12-31 | 1962-05-01 | Tung Sol Electric Inc | Method of forming ohmic contact to silicon |
| US3109225A (en) * | 1958-08-29 | 1963-11-05 | Rca Corp | Method of mounting a semiconductor device |
| US3093882A (en) * | 1958-09-30 | 1963-06-18 | Siemens Ag | Method for producing a silicon semiconductor device |
| US3151949A (en) * | 1959-09-29 | 1964-10-06 | Bbc Brown Boveri & Cie | Manufacture of semiconductor rectifier |
| US3178271A (en) * | 1960-02-26 | 1965-04-13 | Philco Corp | High temperature ohmic joint for silicon semiconductor devices and method of forming same |
| NL269346A (cg-RX-API-DMAC10.html) * | 1960-09-20 | |||
| US3287611A (en) * | 1961-08-17 | 1966-11-22 | Gen Motors Corp | Controlled conducting region geometry in semiconductor devices |
| FR1386343A (fr) * | 1963-11-26 | 1965-01-22 | Mémoires matricielles à cryosars bistables et procédé de fabrication de telles mémoires | |
| US3518498A (en) * | 1967-12-27 | 1970-06-30 | Gen Electric | High-q,high-frequency silicon/silicon-dioxide capacitor |
| US4358784A (en) * | 1979-11-30 | 1982-11-09 | International Rectifier Corporation | Clad molybdenum disks for alloyed diode |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2441603A (en) * | 1943-07-28 | 1948-05-18 | Bell Telephone Labor Inc | Electrical translating materials and method of making them |
| US2736847A (en) * | 1954-05-10 | 1956-02-28 | Hughes Aircraft Co | Fused-junction silicon diodes |
-
0
- BE BE558881D patent/BE558881A/xx unknown
-
1956
- 1956-07-06 US US596243A patent/US2854612A/en not_active Expired - Lifetime
-
1957
- 1957-07-05 FR FR72093D patent/FR72093E/fr not_active Expired
- 1957-07-05 GB GB21378/57A patent/GB820190A/en not_active Expired
- 1957-07-06 CH CH4806557A patent/CH374770A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US2854612A (en) | 1958-09-30 |
| CH374770A (de) | 1964-01-31 |
| FR72093E (fr) | 1960-03-21 |
| GB820190A (en) | 1959-09-16 |