GB779885A - Improvements in or relating to transistor circuit arrangements for simulating a variable electric resistance - Google Patents

Improvements in or relating to transistor circuit arrangements for simulating a variable electric resistance

Info

Publication number
GB779885A
GB779885A GB30877/56A GB3087756A GB779885A GB 779885 A GB779885 A GB 779885A GB 30877/56 A GB30877/56 A GB 30877/56A GB 3087756 A GB3087756 A GB 3087756A GB 779885 A GB779885 A GB 779885A
Authority
GB
United Kingdom
Prior art keywords
transistor
emitter
collector
oscillations
condenser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30877/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB779885A publication Critical patent/GB779885A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/78—Generating a single train of pulses having a predetermined pattern, e.g. a predetermined number
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching ac currents or voltages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

779,885. Keying carrier frequencies. PHILIPS ELECTRICAL INDUSTRIES. Ltd. Dec. 1, 1954 [Dec. 4. 1953], No. 30877/56. Divided out of 779,884. Class 40(5) The emitter base path of a junction transistor 4 is so biased that the emitter collector path shunting the tuned circuit of an oscillator, e.g. another transistor 36, is of sufficiently low value normally to prevent. oscillations but a condenser 37 is connected to .the transistor 4 so that if oscillations are 'caused temporarily to start e.g. by temporarily short circuiting the condenser 37 or as shown by a pulse 38 applied to block temporarily the emitter collector path the oscillations are rectified across a junction of the transistor 4 and cause an opposing bias to be produced on the condenser 37 to maintain the oscillations. The oscillatior 36 is thus stable both in "on" and "off" condition. The condenser 37 may be connected as shown to the base of the transistor 4, its other terminal being connected to earth or to the live terminal of the supply source. Alternatively it may be omitted and an R-C filter included in the emitter circuit to develop the blocking bias. With, as shown,'no direct bias source 'between the emitter and collector of the transistor 4 the collector current may be substantially zero. The transistor 4 may be of symmetrical type, i.e. the emitter/ collector current reverses with reversal of the voltage between the emitter and collector.
GB30877/56A 1953-12-04 1954-12-01 Improvements in or relating to transistor circuit arrangements for simulating a variable electric resistance Expired GB779885A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL332991X 1953-12-04

Publications (1)

Publication Number Publication Date
GB779885A true GB779885A (en) 1957-07-24

Family

ID=19784432

Family Applications (2)

Application Number Title Priority Date Filing Date
GB30877/56A Expired GB779885A (en) 1953-12-04 1954-12-01 Improvements in or relating to transistor circuit arrangements for simulating a variable electric resistance
GB34812/54A Expired GB779884A (en) 1953-12-04 1954-12-01 Improvements in or relating to transistor circuit arrangements

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB34812/54A Expired GB779884A (en) 1953-12-04 1954-12-01 Improvements in or relating to transistor circuit arrangements

Country Status (4)

Country Link
BE (1) BE533822A (en)
CH (1) CH332991A (en)
GB (2) GB779885A (en)
NL (1) NL183359B (en)

Also Published As

Publication number Publication date
BE533822A (en)
GB779884A (en) 1957-07-24
NL183359B (en)
CH332991A (en) 1958-09-30

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