GB766671A - Improvements in or relating to semi-conductor materials - Google Patents

Improvements in or relating to semi-conductor materials

Info

Publication number
GB766671A
GB766671A GB10949/54A GB1094954A GB766671A GB 766671 A GB766671 A GB 766671A GB 10949/54 A GB10949/54 A GB 10949/54A GB 1094954 A GB1094954 A GB 1094954A GB 766671 A GB766671 A GB 766671A
Authority
GB
United Kingdom
Prior art keywords
per cent
insb
alloy
atomic
atomic per
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10949/54A
Other languages
English (en)
Inventor
John Sydney Blakemore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE536988D priority Critical patent/BE536988A/fr
Priority to BE539649D priority patent/BE539649A/nl
Priority to NL197918D priority patent/NL197918A/xx
Priority to NL196136D priority patent/NL196136A/xx
Priority to US25952D priority patent/USRE25952E/en
Priority to NL94819D priority patent/NL94819C/xx
Priority to US420401A priority patent/US2843511A/en
Priority to GB10949/54A priority patent/GB766671A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB6499/55A priority patent/GB804000A/en
Priority to CH1775855A priority patent/CH363416A/de
Priority to AU7882/55A priority patent/AU204456B1/en
Priority to DER16395A priority patent/DE967322C/de
Priority to DEI10075A priority patent/DE1047944B/de
Priority to CH356209D priority patent/CH356209A/de
Publication of GB766671A publication Critical patent/GB766671A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
GB10949/54A 1954-04-01 1954-04-14 Improvements in or relating to semi-conductor materials Expired GB766671A (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
BE536988D BE536988A (enExample) 1954-04-01
BE539649D BE539649A (enExample) 1954-04-01
NL197918D NL197918A (enExample) 1954-04-01
NL196136D NL196136A (enExample) 1954-04-01
US25952D USRE25952E (en) 1954-04-01 Semi-conductor devices
NL94819D NL94819C (enExample) 1954-04-01
US420401A US2843511A (en) 1954-04-01 1954-04-01 Semi-conductor devices
GB10949/54A GB766671A (en) 1954-04-01 1954-04-14 Improvements in or relating to semi-conductor materials
GB6499/55A GB804000A (en) 1954-04-01 1955-03-04 Semi-conductor devices and methods of making them
CH1775855A CH363416A (de) 1954-04-01 1955-03-24 Halbleitereinrichtung und Verfahren zu deren Herstellung
AU7882/55A AU204456B1 (en) 1954-04-01 1955-03-28 Semiconductor devices and methods of making them
DER16395A DE967322C (de) 1954-04-01 1955-04-02 Halbleitereinrichtung mit einem Basiskoerper aus p- oder n-Halbleitermaterial und Verfahren zu ihrer Herstellung
DEI10075A DE1047944B (de) 1954-04-01 1955-04-09 Halbleiteranordnung mit einem Halbleiter aus Aó¾Bó§-Verbindungen
CH356209D CH356209A (de) 1954-04-01 1955-04-14 Halbleiterkörper und Verfahren zu seiner Herstellung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US420401A US2843511A (en) 1954-04-01 1954-04-01 Semi-conductor devices
GB10949/54A GB766671A (en) 1954-04-01 1954-04-14 Improvements in or relating to semi-conductor materials

Publications (1)

Publication Number Publication Date
GB766671A true GB766671A (en) 1957-01-23

Family

ID=26247883

Family Applications (2)

Application Number Title Priority Date Filing Date
GB10949/54A Expired GB766671A (en) 1954-04-01 1954-04-14 Improvements in or relating to semi-conductor materials
GB6499/55A Expired GB804000A (en) 1954-04-01 1955-03-04 Semi-conductor devices and methods of making them

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB6499/55A Expired GB804000A (en) 1954-04-01 1955-03-04 Semi-conductor devices and methods of making them

Country Status (7)

Country Link
US (2) US2843511A (enExample)
AU (1) AU204456B1 (enExample)
BE (2) BE539649A (enExample)
CH (2) CH363416A (enExample)
DE (2) DE967322C (enExample)
GB (2) GB766671A (enExample)
NL (3) NL94819C (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207012B (de) * 1955-12-24 1965-12-16 Telefunken Patent Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3065392A (en) * 1958-02-07 1962-11-20 Rca Corp Semiconductor devices
US2956913A (en) * 1958-11-20 1960-10-18 Texas Instruments Inc Transistor and method of making same
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
NL243338A (enExample) * 1959-09-14
DE1151605C2 (de) * 1960-08-26 1964-02-06 Telefunken Patent Halbleiterbauelement
US3094633A (en) * 1960-09-29 1963-06-18 Itt Semiconductor multiplanar rectifying junction diode
US3242392A (en) * 1961-04-06 1966-03-22 Nippon Electric Co Low rc semiconductor diode
US3341377A (en) * 1964-10-16 1967-09-12 Fairchild Camera Instr Co Surface-passivated alloy semiconductor devices and method for producing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL144803C (enExample) * 1948-02-26
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2589658A (en) * 1948-06-17 1952-03-18 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
NL84061C (enExample) * 1948-06-26
NL82014C (enExample) * 1949-11-30
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
NL167482C (nl) * 1951-05-05 Toray Industries Kunstleervlies.
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions

Also Published As

Publication number Publication date
DE1047944B (de) 1958-12-31
CH363416A (de) 1962-07-31
BE536988A (enExample)
US2843511A (en) 1958-07-15
DE967322C (de) 1957-10-31
USRE25952E (en) 1965-12-14
BE539649A (enExample)
GB804000A (en) 1958-11-05
CH356209A (de) 1961-08-15
NL196136A (enExample)
NL197918A (enExample)
AU204456B1 (en) 1955-09-29
NL94819C (enExample)

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