GB761516A - Semi-conductor devices and methods of making same - Google Patents
Semi-conductor devices and methods of making sameInfo
- Publication number
- GB761516A GB761516A GB32142/54A GB3214254A GB761516A GB 761516 A GB761516 A GB 761516A GB 32142/54 A GB32142/54 A GB 32142/54A GB 3214254 A GB3214254 A GB 3214254A GB 761516 A GB761516 A GB 761516A
- Authority
- GB
- United Kingdom
- Prior art keywords
- bismuth
- germanium
- zone
- semi
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 229910052797 bismuth Inorganic materials 0.000 abstract 9
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 9
- 229910052732 germanium Inorganic materials 0.000 abstract 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 238000004857 zone melting Methods 0.000 abstract 3
- 239000002245 particle Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000009826 distribution Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000002250 progressing effect Effects 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US395381A US2820185A (en) | 1953-12-01 | 1953-12-01 | Semi-conductor devices and methods of making same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB761516A true GB761516A (en) | 1956-11-14 |
Family
ID=23562796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB32142/54A Expired GB761516A (en) | 1953-12-01 | 1954-11-05 | Semi-conductor devices and methods of making same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US2820185A (enrdf_load_stackoverflow) |
| BE (1) | BE533765A (enrdf_load_stackoverflow) |
| FR (1) | FR1111581A (enrdf_load_stackoverflow) |
| GB (1) | GB761516A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1126997B (de) * | 1957-08-09 | 1962-04-05 | Rca Corp | Halbleiteranordnung, insbesondere fuer Schaltzwecke, und Verfahren zu deren Herstellung |
| GB1074283A (en) * | 1963-01-09 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2530110A (en) * | 1944-06-02 | 1950-11-14 | Sperry Corp | Nonlinear circuit device utilizing germanium |
| BE466591A (enrdf_load_stackoverflow) * | 1945-07-13 |
-
0
- BE BE533765D patent/BE533765A/xx unknown
-
1953
- 1953-12-01 US US395381A patent/US2820185A/en not_active Expired - Lifetime
-
1954
- 1954-09-04 FR FR1111581D patent/FR1111581A/fr not_active Expired
- 1954-11-05 GB GB32142/54A patent/GB761516A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE533765A (enrdf_load_stackoverflow) | |
| US2820185A (en) | 1958-01-14 |
| FR1111581A (fr) | 1956-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB769674A (en) | Processes for the control of solute segregation | |
| US2992903A (en) | Apparatus for growing thin crystals | |
| GB809641A (en) | Improved methods of treating semiconductor bodies | |
| US2842467A (en) | Method of growing semi-conductors | |
| US2730470A (en) | Method of making semi-conductor crystals | |
| US2809165A (en) | Semi-conductor materials | |
| US2833969A (en) | Semi-conductor devices and methods of making same | |
| GB761516A (en) | Semi-conductor devices and methods of making same | |
| US3025191A (en) | Crystal-growing apparatus and methods | |
| GB871839A (en) | Improvements in or relating to processes for the production of semiconductive bodies | |
| US2841559A (en) | Method of doping semi-conductive materials | |
| GB727447A (en) | Formation of p-n junctions | |
| US3162526A (en) | Method of doping semiconductor materials | |
| GB755422A (en) | An improved method for the production of single crystals of semi-conductor materials | |
| US2859141A (en) | Method for making a semiconductor junction | |
| GB813841A (en) | Improvements in or relating to processes for producing zones having different impurity contents in semi-conductor crystals | |
| GB727678A (en) | Semiconductive materials and the production thereof | |
| GB769426A (en) | Improvements relating to the manufacture of crystalline material | |
| JPS62275099A (ja) | 半絶縁性リン化インジウム単結晶 | |
| US3125532A (en) | Method of doping semiconductor | |
| US2997410A (en) | Single crystalline alloys | |
| JPH0310598B2 (enrdf_load_stackoverflow) | ||
| GB844685A (en) | Improvements in transistors and methods of manufacture thereof | |
| JPS5490086A (en) | Method of producing single crystal | |
| US3031404A (en) | Production of uniform high impurity concentration semiconductor material |