GB737579A - Improvements in or relating to germanium diodes - Google Patents

Improvements in or relating to germanium diodes

Info

Publication number
GB737579A
GB737579A GB25844/52A GB2584452A GB737579A GB 737579 A GB737579 A GB 737579A GB 25844/52 A GB25844/52 A GB 25844/52A GB 2584452 A GB2584452 A GB 2584452A GB 737579 A GB737579 A GB 737579A
Authority
GB
United Kingdom
Prior art keywords
whisker
germanium
lead
cats
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25844/52A
Other languages
English (en)
Inventor
Henry Wolfson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE523522D priority Critical patent/BE523522A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB25844/52A priority patent/GB737579A/en
Priority to US385630A priority patent/US2818537A/en
Priority to FR66323D priority patent/FR66323E/fr
Priority to CH331012D priority patent/CH331012A/fr
Publication of GB737579A publication Critical patent/GB737579A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Contacts (AREA)
GB25844/52A 1952-10-15 1952-10-15 Improvements in or relating to germanium diodes Expired GB737579A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
BE523522D BE523522A (en:Method) 1952-10-15
GB25844/52A GB737579A (en) 1952-10-15 1952-10-15 Improvements in or relating to germanium diodes
US385630A US2818537A (en) 1952-10-15 1953-10-12 Germanium diodes
FR66323D FR66323E (fr) 1952-10-15 1953-10-13 Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux
CH331012D CH331012A (fr) 1952-10-15 1953-10-14 Procédé de fabrication d'un redresseur à cristal de germanium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB25844/52A GB737579A (en) 1952-10-15 1952-10-15 Improvements in or relating to germanium diodes

Publications (1)

Publication Number Publication Date
GB737579A true GB737579A (en) 1955-09-28

Family

ID=10234258

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25844/52A Expired GB737579A (en) 1952-10-15 1952-10-15 Improvements in or relating to germanium diodes

Country Status (5)

Country Link
US (1) US2818537A (en:Method)
BE (1) BE523522A (en:Method)
CH (1) CH331012A (en:Method)
FR (1) FR66323E (en:Method)
GB (1) GB737579A (en:Method)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE594959A (en:Method) * 1943-07-28
US2530110A (en) * 1944-06-02 1950-11-14 Sperry Corp Nonlinear circuit device utilizing germanium
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
US2504628A (en) * 1946-03-23 1950-04-18 Purdue Research Foundation Electrical device with germanium alloys
NL84061C (en:Method) * 1948-06-26
GB688866A (en) * 1950-10-19 1953-03-18 Gen Electric Co Ltd Improvements in or relating to crystal rectifiers

Also Published As

Publication number Publication date
CH331012A (fr) 1958-06-30
BE523522A (en:Method)
US2818537A (en) 1957-12-31
FR66323E (fr) 1956-06-29

Similar Documents

Publication Publication Date Title
US2694040A (en) Methods of selectively plating p-type material of a semiconductor containing a p-n junction
US2725316A (en) Method of preparing pn junctions in semiconductors
GB737579A (en) Improvements in or relating to germanium diodes
GB811573A (en) Improvements in or relating to screw threaded fastenings
GB753131A (en) Improvements in or relating to low resistance connections to germanium
GB1000364A (en) Semiconductor junction devices
GB873484A (en) Improvements in and relating to the manufacture of semiconductive devices
GB790015A (en) Coated wire
GB744003A (en) Improvements in or relating to the protection of silver and silver alloy surfaces
GB1035892A (en) New and useful improvements in xerographic plate
GB1164670A (en) Method for Forming an Alloy Film by Electroplating
JPS5730353A (en) Semiconductor device
GB1001693A (en) Process for the manufacture of semiconductor arrangements
JPS5760844A (en) Semiconductor device
GB732268A (en) Improvements in or relating to plain bearings
JPS5641394A (en) Electrolytic electrode
GB1133403A (en) Deposition of metal layers on insulators
GB1178742A (en) Improvements relating to Articles with Dry Lubricant Coatings
GB1011707A (en) Nonlinear tunnel resistor and method of manufacturing the same
GB917739A (en) Gold coating of molybdenum by electroplating
GB718354A (en) Improvements in or relating to selenium rectifiers
GB1033459A (en) The manufacture of silicon devices
JPS57122533A (en) Semiconductor device
GB704085A (en) Improvements in or relating to plain bearings
GB816170A (en) Improvements relating to the forming of p-n junctions