GB735986A - Method of making p-n junction devices - Google Patents

Method of making p-n junction devices

Info

Publication number
GB735986A
GB735986A GB26233/53A GB2623353A GB735986A GB 735986 A GB735986 A GB 735986A GB 26233/53 A GB26233/53 A GB 26233/53A GB 2623353 A GB2623353 A GB 2623353A GB 735986 A GB735986 A GB 735986A
Authority
GB
United Kingdom
Prior art keywords
alloy
germanium
junctions
pellets
per cent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26233/53A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB735986A publication Critical patent/GB735986A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
GB26233/53A 1952-10-20 1953-09-23 Method of making p-n junction devices Expired GB735986A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US319753XA 1952-10-20 1952-10-20

Publications (1)

Publication Number Publication Date
GB735986A true GB735986A (en) 1955-08-31

Family

ID=21862427

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26233/53A Expired GB735986A (en) 1952-10-20 1953-09-23 Method of making p-n junction devices

Country Status (5)

Country Link
BE (1) BE523638A (fr)
CH (1) CH319753A (fr)
FR (1) FR1088371A (fr)
GB (1) GB735986A (fr)
NL (1) NL182156B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3167462A (en) * 1961-06-08 1965-01-26 Western Electric Co Method of forming alloyed regions in semiconductor bodies

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL92060C (fr) * 1953-10-26
NL212855A (fr) * 1955-03-10
NL106425C (fr) * 1958-01-14
DE1093483B (de) * 1958-06-04 1960-11-24 Telefunken Gmbh Verfahren zur Herstellung von Halbleiteranordnungen mit zwei pn-UEbergaengen, insbesondere Silizium-Transistoren, durch Verschmelzen von zwei Halbleiterkristallen
US2985806A (en) * 1958-12-24 1961-05-23 Philco Corp Semiconductor fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3167462A (en) * 1961-06-08 1965-01-26 Western Electric Co Method of forming alloyed regions in semiconductor bodies

Also Published As

Publication number Publication date
FR1088371A (fr) 1955-03-07
NL182156B (nl)
CH319753A (de) 1957-02-28
BE523638A (fr)

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