GB735986A - Method of making p-n junction devices - Google Patents
Method of making p-n junction devicesInfo
- Publication number
- GB735986A GB735986A GB26233/53A GB2623353A GB735986A GB 735986 A GB735986 A GB 735986A GB 26233/53 A GB26233/53 A GB 26233/53A GB 2623353 A GB2623353 A GB 2623353A GB 735986 A GB735986 A GB 735986A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloy
- germanium
- junctions
- pellets
- per cent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000956 alloy Substances 0.000 abstract 7
- 229910045601 alloy Inorganic materials 0.000 abstract 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 3
- 239000008188 pellet Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229920003002 synthetic resin Polymers 0.000 abstract 1
- 239000000057 synthetic resin Substances 0.000 abstract 1
- 229920001169 thermoplastic Polymers 0.000 abstract 1
- 239000004416 thermosoftening plastic Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US319753XA | 1952-10-20 | 1952-10-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB735986A true GB735986A (en) | 1955-08-31 |
Family
ID=21862427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB26233/53A Expired GB735986A (en) | 1952-10-20 | 1953-09-23 | Method of making p-n junction devices |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE523638A (fr) |
CH (1) | CH319753A (fr) |
FR (1) | FR1088371A (fr) |
GB (1) | GB735986A (fr) |
NL (1) | NL182156B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3167462A (en) * | 1961-06-08 | 1965-01-26 | Western Electric Co | Method of forming alloyed regions in semiconductor bodies |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL92060C (fr) * | 1953-10-26 | |||
NL212855A (fr) * | 1955-03-10 | |||
NL106425C (fr) * | 1958-01-14 | |||
DE1093483B (de) * | 1958-06-04 | 1960-11-24 | Telefunken Gmbh | Verfahren zur Herstellung von Halbleiteranordnungen mit zwei pn-UEbergaengen, insbesondere Silizium-Transistoren, durch Verschmelzen von zwei Halbleiterkristallen |
US2985806A (en) * | 1958-12-24 | 1961-05-23 | Philco Corp | Semiconductor fabrication |
-
0
- NL NLAANVRAGE7810304,A patent/NL182156B/xx unknown
- BE BE523638D patent/BE523638A/xx unknown
-
1953
- 1953-08-29 FR FR1088371D patent/FR1088371A/fr not_active Expired
- 1953-09-18 CH CH319753D patent/CH319753A/de unknown
- 1953-09-23 GB GB26233/53A patent/GB735986A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3167462A (en) * | 1961-06-08 | 1965-01-26 | Western Electric Co | Method of forming alloyed regions in semiconductor bodies |
Also Published As
Publication number | Publication date |
---|---|
FR1088371A (fr) | 1955-03-07 |
NL182156B (nl) | |
CH319753A (de) | 1957-02-28 |
BE523638A (fr) |
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