GB713722A - Improvements in or relating to methods of manufacturing electrode systems - Google Patents
Improvements in or relating to methods of manufacturing electrode systemsInfo
- Publication number
- GB713722A GB713722A GB24979/52A GB2497952A GB713722A GB 713722 A GB713722 A GB 713722A GB 24979/52 A GB24979/52 A GB 24979/52A GB 2497952 A GB2497952 A GB 2497952A GB 713722 A GB713722 A GB 713722A
- Authority
- GB
- United Kingdom
- Prior art keywords
- sheath
- metal
- core
- wire
- soldered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 2
- 239000011324 bead Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000002131 composite material Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000004922 lacquer Substances 0.000 abstract 1
- 239000000395 magnesium oxide Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
713,722. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES, Ltd. Oct. 6, 1952, [Oct. 9, 1951.] No. 24979/52. Class 37. An electrode system for a crystal rectifier or transistor comprises a holder which supports the semi-conductor and at least one filamentary electrode which is supported or constituted by the metal core of drawn composite wire. The wire comprises a metal sheath and one or more metal cores separated by insulating material such as magnesia, the whole being subjected to a stretching process in known manner to reduce the diameters of all the elements, after which part of the sheath is removed to disclose the core. The ends of the insulation may then be coated with an insulating lacquer. Fig. 3 shows a rectifier in which whisker 7 is soldered to core 4 of a drawn wire which also comprises sheath 6 and an insulating portion as described. A germanium crystal 11 is supported on a rod 10 which is soldered to a ring 8. Ring 8 and sheath 6 are sealed to a glass bead 5. Fig. 4 shows a modification in which the drawn wire comprises two cores 13 and 14, which form the two whisker electrodes of a transistor. A metal tube may be used to enclose the assembly in place of the glass bead.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL713722X | 1951-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB713722A true GB713722A (en) | 1954-08-18 |
Family
ID=31185873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24979/52A Expired GB713722A (en) | 1951-10-09 | 1952-10-06 | Improvements in or relating to methods of manufacturing electrode systems |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB713722A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2157888A (en) * | 1984-04-27 | 1985-10-30 | Westinghouse Brake & Signal | Semiconductor housing |
-
1952
- 1952-10-06 GB GB24979/52A patent/GB713722A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2157888A (en) * | 1984-04-27 | 1985-10-30 | Westinghouse Brake & Signal | Semiconductor housing |
| US4628147A (en) * | 1984-04-27 | 1986-12-09 | Westinghouse Brake And Signal Company Limited | Semiconductor housings |
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