GB270362A - Improvements in or relating to asymmetric electric couples for rectifying alternating current and like purposes - Google Patents

Improvements in or relating to asymmetric electric couples for rectifying alternating current and like purposes

Info

Publication number
GB270362A
GB270362A GB30476/25A GB3047625A GB270362A GB 270362 A GB270362 A GB 270362A GB 30476/25 A GB30476/25 A GB 30476/25A GB 3047625 A GB3047625 A GB 3047625A GB 270362 A GB270362 A GB 270362A
Authority
GB
United Kingdom
Prior art keywords
assymmetric
couple
alternating current
charging
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30476/25A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US69215A priority Critical patent/US1751460A/en
Application filed by Individual filed Critical Individual
Priority to GB30476/25A priority patent/GB270362A/en
Publication of GB270362A publication Critical patent/GB270362A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Abstract

270,362. Ruben, S. Dec. 2, 1925. Charging galvanic batteries.-To prevent discharge of the battery in the event of failure of the supply, a cut out which may consist of an assymmetric couple 23 is provided in the charging circuit. The electronegative element of the assymmetric couple is made of a material having inherent film-forming properties and comprises a metal base such as copper, zinc, tin, silver, antimony, lead, manganese, iron, or vanadium or alloys thereof, combined with one or more of the elements oxygen, sulphur, tellurium and selenium. For the electropositive element of the couple is employed a metallic element such as calcium, magnesium, zinc, boron, aluminium or an amalgam thereof, for example, a disc of the required metal may be treated in a saturated solution of mercuric chloride. To form a rectifier suitable for charging batteries from an alternating current source the elements 13, Fig. 1, forming assymmetric couples, are clamped together on an insulated bolt 12 and connected as shown to a supply transformer 17.
GB30476/25A 1925-11-16 1925-12-02 Improvements in or relating to asymmetric electric couples for rectifying alternating current and like purposes Expired GB270362A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US69215A US1751460A (en) 1925-11-16 1925-11-16 Asymmetric electric couple
GB30476/25A GB270362A (en) 1925-11-16 1925-12-02 Improvements in or relating to asymmetric electric couples for rectifying alternating current and like purposes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69215A US1751460A (en) 1925-11-16 1925-11-16 Asymmetric electric couple
GB30476/25A GB270362A (en) 1925-11-16 1925-12-02 Improvements in or relating to asymmetric electric couples for rectifying alternating current and like purposes

Publications (1)

Publication Number Publication Date
GB270362A true GB270362A (en) 1927-05-02

Family

ID=26260459

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30476/25A Expired GB270362A (en) 1925-11-16 1925-12-02 Improvements in or relating to asymmetric electric couples for rectifying alternating current and like purposes

Country Status (2)

Country Link
US (1) US1751460A (en)
GB (1) GB270362A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE757281C (en) * 1938-12-14 1953-10-05 Aeg Electrically asymmetrically conductive system, in particular dry rectifier, with a barrier layer between the semiconductor and the carrier electrode and a method for its production

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2547951A (en) * 1945-02-08 1951-04-10 Levin Irvin Rectifier
US2948837A (en) * 1956-09-04 1960-08-09 Mc Graw Edison Co Solid state electronic switch and circuits therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE757281C (en) * 1938-12-14 1953-10-05 Aeg Electrically asymmetrically conductive system, in particular dry rectifier, with a barrier layer between the semiconductor and the carrier electrode and a method for its production

Also Published As

Publication number Publication date
US1751460A (en) 1930-03-18

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