GB2587089B - One-time programmable memories with low power read operation and novel sensing scheme - Google Patents

One-time programmable memories with low power read operation and novel sensing scheme Download PDF

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Publication number
GB2587089B
GB2587089B GB2013530.7A GB202013530A GB2587089B GB 2587089 B GB2587089 B GB 2587089B GB 202013530 A GB202013530 A GB 202013530A GB 2587089 B GB2587089 B GB 2587089B
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GB
United Kingdom
Prior art keywords
low power
read operation
time programmable
sensing scheme
programmable memories
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2013530.7A
Other versions
GB202013530D0 (en
GB2587089A (en
Inventor
Chung Shine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Attopsemi Technology Co Ltd
Original Assignee
Attopsemi Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/559,560 external-priority patent/US10726914B2/en
Priority claimed from US16/931,314 external-priority patent/US11062786B2/en
Application filed by Attopsemi Technology Co Ltd filed Critical Attopsemi Technology Co Ltd
Publication of GB202013530D0 publication Critical patent/GB202013530D0/en
Publication of GB2587089A publication Critical patent/GB2587089A/en
Application granted granted Critical
Publication of GB2587089B publication Critical patent/GB2587089B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
GB2013530.7A 2019-09-03 2020-08-28 One-time programmable memories with low power read operation and novel sensing scheme Active GB2587089B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/559,560 US10726914B2 (en) 2017-04-14 2019-09-03 Programmable resistive memories with low power read operation and novel sensing scheme
US16/931,314 US11062786B2 (en) 2017-04-14 2020-07-16 One-time programmable memories with low power read operation and novel sensing scheme

Publications (3)

Publication Number Publication Date
GB202013530D0 GB202013530D0 (en) 2020-10-14
GB2587089A GB2587089A (en) 2021-03-17
GB2587089B true GB2587089B (en) 2021-12-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
GB2013530.7A Active GB2587089B (en) 2019-09-03 2020-08-28 One-time programmable memories with low power read operation and novel sensing scheme

Country Status (3)

Country Link
CN (1) CN112447226A (en)
DE (1) DE102020122948A1 (en)
GB (1) GB2587089B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115641897A (en) * 2021-07-19 2023-01-24 长鑫存储技术有限公司 Anti-fuse memory circuit

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6128239A (en) * 1999-10-29 2000-10-03 Hewlett-Packard MRAM device including analog sense amplifiers
US20030043616A1 (en) * 2001-08-28 2003-03-06 Baker R. J. Sensing method and apparatus for resistance memory device
US20040100845A1 (en) * 2002-11-27 2004-05-27 Subramanian Chitra K. Technique for sensing the state of a magneto-resistive random access memory
US20140022004A1 (en) * 2012-07-19 2014-01-23 Globalfoundries Singapore Pte. Ltd. Fuse sensing circuits
US20140169063A1 (en) * 2012-12-19 2014-06-19 Nathaniel J. August Method and apparatus for reading variable resistance memory elements
US20180301198A1 (en) * 2017-04-14 2018-10-18 Shine C. Chung Low power read operation for programmable resistive memories

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7136303B2 (en) * 2004-08-31 2006-11-14 Broadcom Corporation System and method using a one-time programmable memory cell
TWI480881B (en) * 2010-08-20 2015-04-11 Chien Shine Chung One-time programmable memory, electronics system, and method for providing one-time programmable memory
CN105448331B (en) * 2014-08-22 2017-12-01 华邦电子股份有限公司 Resistive random access memory circuit and read method
US10290349B2 (en) * 2015-07-29 2019-05-14 Nantero, Inc. DDR compatible open array architectures for resistive change element arrays
US9679637B1 (en) * 2016-10-07 2017-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Single-ended memory device with differential sensing
TWI615851B (en) * 2016-10-14 2018-02-21 旺宏電子股份有限公司 Sensing circuit and method for non-volatile memory device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6128239A (en) * 1999-10-29 2000-10-03 Hewlett-Packard MRAM device including analog sense amplifiers
US20030043616A1 (en) * 2001-08-28 2003-03-06 Baker R. J. Sensing method and apparatus for resistance memory device
US20040100845A1 (en) * 2002-11-27 2004-05-27 Subramanian Chitra K. Technique for sensing the state of a magneto-resistive random access memory
US20140022004A1 (en) * 2012-07-19 2014-01-23 Globalfoundries Singapore Pte. Ltd. Fuse sensing circuits
US20140169063A1 (en) * 2012-12-19 2014-06-19 Nathaniel J. August Method and apparatus for reading variable resistance memory elements
US20180301198A1 (en) * 2017-04-14 2018-10-18 Shine C. Chung Low power read operation for programmable resistive memories

Also Published As

Publication number Publication date
GB202013530D0 (en) 2020-10-14
GB2587089A (en) 2021-03-17
CN112447226A (en) 2021-03-05
DE102020122948A1 (en) 2021-03-04

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