GB2580578A - Electro-optical device with lateral active regions - Google Patents

Electro-optical device with lateral active regions Download PDF

Info

Publication number
GB2580578A
GB2580578A GB2007058.7A GB202007058A GB2580578A GB 2580578 A GB2580578 A GB 2580578A GB 202007058 A GB202007058 A GB 202007058A GB 2580578 A GB2580578 A GB 2580578A
Authority
GB
United Kingdom
Prior art keywords
electro
doped layer
slab
optical device
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB2007058.7A
Other versions
GB2580578B (en
GB202007058D0 (en
Inventor
Caër Charles
Czomomaz Lukas
Abel Stefan
Jan Offrein Bert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB202007058D0 publication Critical patent/GB202007058D0/en
Publication of GB2580578A publication Critical patent/GB2580578A/en
Application granted granted Critical
Publication of GB2580578B publication Critical patent/GB2580578B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III – V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III – V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two- by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

Claims (20)

1. A lateral current injection electro-optical device comprising: an active region comprising a stack of III - V semiconductor gain materials stacked along a stacking direction z, the active region formed as a slab having several lateral surface portions, each extending parallel to said stacking direction z; and two paired elements, including: a pair of doped layers of III - V semiconductor materials, including an n- doped layer and a p-doped layer; and a pair of lateral waveguide cores, wherein the two paired elements are laterally arranged, two-by-two, on opposite sides of the slab, the elements distinctly adjoining respective elements of the lateral surface portions of the slab such that the elements are separated from each other by the slab.
2. The electro-optical device of claim 1, wherein: the slab has two pairs of opposite, lateral surface portions, each extending parallel to said stacking direction z; the p-doped layer and the n-doped layer are arranged on respective sides of the slab, contiguously with the opposite, lateral surface portions of one of said two pairs of surface portions; and the lateral waveguide cores are laterally butt-jointed to the opposite, lateral surface portions of the other one of said two pairs of surface portions.
3. The electro-optical device according to claim 2, wherein: the slab is a form factor, whereby a length of the slab is larger than a width thereof, wherein said width, said length, and said stacking direction z are perpendicular two-by-two; and a maximum length of each of the p-doped layer and the n-doped layer is less than a length of said opposite, lateral surface portions of said one of said two pairs.
4. The electro-optical device according to claim 3, wherein: each of the p-doped layer and the n-doped layer comprises, on a top surface portion thereof, a recess extending laterally along the slab and parallel to its length, so as for the active region and the contiguous pair of doped layers to have a rib waveguide configuration.
5. The electro-optical device according to claim 4, further comprising: a metal contact patterned on a top surface portion of each of the p-doped layer and the n-doped layer, along the recess.
6. The electro-optical device according to claim 1, wherein: the electro-optical device further comprises structured silicon waveguide cores having portions extending underneath said lateral waveguide cores; and the electro-optical device is configured as a hybrid lateral current injection device, whereby optical radiation out-coupled from the active region via the lateral waveguide cores couples into the structured silicon waveguide cores, in operation.
7. The electro-optical device according to claim 6, wherein: the lateral waveguide cores are tapered, so as to thin down outwardly, and said portions of the structured silicon waveguide cores are reversely tapered.
8. The electro-optical device according to claim 7, wherein: the lateral waveguide cores exhibit, each, a three-stage taper.
9. The electro-optical device according to claim 3, wherein: each of the p-doped layer and the n-doped layer are tapered, so as to laterally flare towards the slab, at a level of contact therewith.
10. The electro-optical device according to claim 1, wherein: the electro-optical device is a lateral current injection laser device.
11. The electro-optical device according to claim 10, wherein: the laser device is a single mode laser device.
12. The electro-optical device according to claim 10, wherein: the silicon waveguides comprise Bragg mirrors configured so as to provide a radiation feedback for the laser.
13. The electro-optical device according to claim 1, wherein: said stack of III - V semiconductor gain materials comprise one of: Ini_x_ UxGayAs; with 0 < x < 1 and 0 < y < 1 - x; and each of the p-doped layer and the n-doped layer comprises one of InP, InAs or GaAs.
14. The electro-optical device according to claim 1, wherein: each of the lateral waveguide cores, the p-doped layer, and the n-doped layer are a selectively regrown layer.
15. A silicon photonic chip, comprising: a lateral current injection, electro-optical device comprising an active region that is comprised of a stack of ΠΠ- V semiconductor gain materials stacked along a stacking direction z and two paired elements, wherein the active region is formed as a slab having several lateral surface portions, each extending parallel to said stacking direction z, and the two paired elements include: a pair of doped layers of III - V semiconductor materials that include an n-doped layer and a p-doped layer, and a pair of lateral waveguide cores, wherein the two paired elements are laterally arranged, two-by-two, on opposite sides of the slab, the elements distinctly adjoining respective elements of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab; and structured silicon waveguide cores having portions extending underneath the pair of lateral waveguide cores of the electro-optical device, wherein the electro-optical device is configured as a hybrid lateral current injection device, whereby optical radiation out-coupled from the active region via the lateral waveguide cores couples into the structured silicon waveguide cores, in operation.
16. The silicon photonic chip according to claim 15, further comprising: a silicon on insulator wafer, whose top silicon layer is structured so as to form said structured silicon waveguide cores.
17. The silicon photonic chip according to claim 16, wherein: the silicon photonic chip is a CMOS -fabricated device.
18. The silicon photonic chip according to claim 17, wherein: each of the p-doped layer and the n-doped layer comprises a recess extending laterally along the slab and parallel to its length, so as for the active region and the contiguous pair of doped layers to have a rib waveguide configuration.
19. The silicon photonic chip according to claim 18, further comprising: a CMOS-compatible metal contact patterned on a top surface portion of each of the p-doped layer and the n-doped layer, the top surface portion being on a same side as and along the recess extending on said each of the doped layer.
20. A method of fabrication of an electro-optical device, the method comprising: forming an active region of the electro-optical device, said region comprising a stack of III - V semiconductor gain materials stacked along a stacking direction z, the active region formed as a slab having several lateral surface portions, each extending parallel to said stacking direction z; and selectively re-growing two paired elements, including: a pair of doped layers of ΠΠ- V semiconductor materials, comprising an n-doped layer and a p-doped layer; and a pair of lateral waveguide cores, so as for the two paired elements to be laterally arranged, two-by-two, on opposite sides of the slab, with said elements distinctly adjoining respective ones of the lateral surface portions of the slab, so as for the elements to be separated from each other by the slab.
GB2007058.7A 2017-11-01 2018-10-23 Electro-optical device with lateral active regions Active GB2580578B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/800,339 US10340661B2 (en) 2017-11-01 2017-11-01 Electro-optical device with lateral current injection regions
PCT/IB2018/058246 WO2019087004A1 (en) 2017-11-01 2018-10-23 Electro-optical device with lateral active regions

Publications (3)

Publication Number Publication Date
GB202007058D0 GB202007058D0 (en) 2020-06-24
GB2580578A true GB2580578A (en) 2020-07-22
GB2580578B GB2580578B (en) 2020-12-23

Family

ID=66244409

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2007058.7A Active GB2580578B (en) 2017-11-01 2018-10-23 Electro-optical device with lateral active regions

Country Status (6)

Country Link
US (3) US10340661B2 (en)
JP (1) JP7108366B2 (en)
CN (1) CN111247704B (en)
DE (1) DE112018004477B4 (en)
GB (1) GB2580578B (en)
WO (1) WO2019087004A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2559252B (en) * 2016-12-02 2020-06-03 Rockley Photonics Ltd Waveguide optoelectronic device
US10594111B2 (en) 2017-08-31 2020-03-17 International Business Machines Corporation Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals
US10340661B2 (en) 2017-11-01 2019-07-02 International Business Machines Corporation Electro-optical device with lateral current injection regions
US11126020B2 (en) * 2017-11-23 2021-09-21 Rockley Photonics Limited Electro-optically active device
US12044908B2 (en) 2018-05-16 2024-07-23 Rockley Photonics Limited III-V/SI hybrid optoelectronic device and method of manufacture
JP7121272B2 (en) 2018-07-31 2022-08-18 キョーラク株式会社 Structure manufacturing method
CN110289553A (en) * 2019-06-25 2019-09-27 中国科学院半导体研究所 Multi-wavelength silicon substrate iii-v hybrid integrated laser, its array element and preparation method
JP7476906B2 (en) * 2019-12-17 2024-05-01 日本電信電話株式会社 Optical Devices
US11531159B2 (en) * 2020-06-19 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Optical waveguide apparatus and method of fabrication thereof
US11869991B2 (en) * 2020-09-18 2024-01-09 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and method of making
WO2022153529A1 (en) * 2021-01-18 2022-07-21 日本電信電話株式会社 Semiconductor laser and method for designing same
JPWO2023276053A1 (en) * 2021-06-30 2023-01-05
US11719883B1 (en) * 2022-02-18 2023-08-08 Nexus Photonics Inc Integrated GaAs active devices with improved optical coupling to dielectric waveguides
FR3134252B1 (en) * 2022-03-29 2024-02-23 Commissariat Energie Atomique optoelectronic device comprising a III-V semiconductor membrane laser source forming a lateral p-i-n junction
WO2023233567A1 (en) * 2022-06-01 2023-12-07 日本電信電話株式会社 Optical device
US20240241311A1 (en) * 2023-01-12 2024-07-18 Avago Technologies International Pte. Limited Multi-step waveguide tapering to couple light from a light source to a ridge waveguide

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094209A (en) * 1999-09-03 2001-04-06 Agilent Technol Inc Method for minimizing optical cavity loss of vertical cavity surface-emitting laser
US20080112451A1 (en) * 2006-11-13 2008-05-15 Jds Uniphase Corporation, State Of Incorporation: Delaware Semiconductor Laser Diode With Narrow Lateral Beam Divergence
US20080198888A1 (en) * 2007-02-16 2008-08-21 Hitachi, Ltd. Semiconductor laser apparatus and optical amplifier apparatus
EP2544319A1 (en) * 2011-07-08 2013-01-09 Alcatel Lucent Laser source for photonic integrated devices
JP2013165152A (en) * 2012-02-10 2013-08-22 Nippon Telegr & Teleph Corp <Ntt> Plasmon thin film laser

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232368A (en) * 1987-03-20 1988-09-28 Fujitsu Ltd Hybrid optoelectronic integrated circuit
JP3227661B2 (en) * 1993-09-28 2001-11-12 キヤノン株式会社 Strained quantum well structure element and optical device having the same
US5659560A (en) * 1994-05-12 1997-08-19 Canon Kabushiki Kaisha Apparatus and method for driving oscillation polarization selective light source, and optical communication system using the same
US6795622B2 (en) * 1998-06-24 2004-09-21 The Trustess Of Princeton University Photonic integrated circuits
JP2003046197A (en) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd Semiconductor laser and its manufacturing method
KR100520796B1 (en) * 2003-10-20 2005-10-13 한국전자통신연구원 Method for manufacturing semiconductor optical amplifier having planar buried heteostructure
US7271418B2 (en) * 2004-09-24 2007-09-18 National Central University Semiconductor apparatus for white light generation and amplification
JP4352337B2 (en) * 2005-09-16 2009-10-28 ソニー株式会社 Semiconductor laser and semiconductor laser device
US20070153868A1 (en) 2005-11-14 2007-07-05 Applied Materials, Inc. Legal Department Semiconductor laser
JP2007157749A (en) * 2005-11-30 2007-06-21 Toshiba Corp Light emitting element
JP4942429B2 (en) 2006-09-04 2012-05-30 日本電信電話株式会社 Semiconductor tunable laser
US8053810B2 (en) * 2007-09-07 2011-11-08 International Business Machines Corporation Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same
US8680553B2 (en) * 2008-11-12 2014-03-25 Hitachi, Ltd. Light-emitting device, light-receiving device and method of manufacturing the same
US8909021B2 (en) * 2010-02-01 2014-12-09 Hitachi, Ltd. Semiconductor optical device
EP2539979B1 (en) 2010-02-24 2018-05-23 Universiteit Gent Laser light coupling into SOI CMOS photonic integrated circuit
WO2011111436A1 (en) 2010-03-08 2011-09-15 株式会社日立製作所 Germanium light-emitting element
US8829638B2 (en) 2010-04-05 2014-09-09 The Board Of Trustees Of The Leland Stanford Junior University Ultrafast photonic crystal cavity single-mode light-emitting diode
EP2439822A1 (en) * 2010-09-30 2012-04-11 Alcatel Lucent A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a photodetector
FR2967831B1 (en) * 2010-11-18 2013-07-19 Commissariat Energie Atomique HETEROGENE HIGH EFFICIENCY LASER AND PROCESS FOR PRODUCING THE LASER
US9917421B2 (en) * 2011-03-17 2018-03-13 Thorlabs Quantum Electronics, Inc. P-type isolation regions adjacent to semiconductor laser facets
JP5762851B2 (en) * 2011-06-28 2015-08-12 株式会社日立製作所 Silicon and germanium light emitting devices
WO2013118248A1 (en) 2012-02-06 2013-08-15 株式会社日立製作所 Light-emitting element
US9966733B2 (en) 2012-05-02 2018-05-08 Mellanox Technologies Silicon Photonics Inc. Integration of laser into optical platform
US9136672B2 (en) * 2012-11-29 2015-09-15 Agency For Science, Technology And Research Optical light source
EP2866317B1 (en) 2013-07-01 2017-08-02 Imec Hybrid waveguide lasers and methods for fabricating hybrid waveguide lasers
GB201319207D0 (en) 2013-10-31 2013-12-18 Ibm Photonic circuit device with on-chip optical gain measurement structures
US9419412B2 (en) * 2013-11-13 2016-08-16 Agency For Science, Technology And Research Integrated laser and method of fabrication thereof
US9059356B1 (en) * 2013-11-22 2015-06-16 Sandia Corporation Laterally injected light-emitting diode and laser diode
US9431791B1 (en) * 2014-02-05 2016-08-30 Aurrion, Inc. Multi-section heterogeneous semiconductor optical amplifier
EP3051638A1 (en) * 2015-01-27 2016-08-03 Huawei Technologies Co., Ltd. Tunable laser and method of tuning a laser
EP3304660B1 (en) * 2015-06-05 2022-10-26 The Government of the United States of America as represented by the Secretary of the Navy Interband cascade lasers with low-fill factor top contact for reduced loss
CN106253055B (en) * 2016-08-26 2019-08-20 武汉光迅科技股份有限公司 A kind of electro-absorption laser and its manufacturing method based on lateral P-I-N structure
US9742150B1 (en) * 2016-09-06 2017-08-22 International Business Machines Corporation Optical amplifier devices and silicon photonic circuit devices comprising such optical amplifier devices
CN106229813B (en) * 2016-09-21 2019-02-15 中国科学院半导体研究所 Silicon-based lateral injection laser and preparation method thereof
CN106848835B (en) * 2016-12-22 2020-04-28 华中科技大学 DFB laser based on surface grating
US10340661B2 (en) 2017-11-01 2019-07-02 International Business Machines Corporation Electro-optical device with lateral current injection regions

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094209A (en) * 1999-09-03 2001-04-06 Agilent Technol Inc Method for minimizing optical cavity loss of vertical cavity surface-emitting laser
US20080112451A1 (en) * 2006-11-13 2008-05-15 Jds Uniphase Corporation, State Of Incorporation: Delaware Semiconductor Laser Diode With Narrow Lateral Beam Divergence
US20080198888A1 (en) * 2007-02-16 2008-08-21 Hitachi, Ltd. Semiconductor laser apparatus and optical amplifier apparatus
EP2544319A1 (en) * 2011-07-08 2013-01-09 Alcatel Lucent Laser source for photonic integrated devices
JP2013165152A (en) * 2012-02-10 2013-08-22 Nippon Telegr & Teleph Corp <Ntt> Plasmon thin film laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
(YOSHIMOTO et al), " "Polarisation -Insensitive Semiconductor Optical Amplifier Gate Switch with Butt-Joint Spot-Size Converters-Its Uniformity" 1999, IEE PROCEEDINGS, pg 71-76 OPTOELECTRONICS *

Also Published As

Publication number Publication date
GB2580578B (en) 2020-12-23
US20190252860A1 (en) 2019-08-15
CN111247704A (en) 2020-06-05
JP2021501462A (en) 2021-01-14
US10340661B2 (en) 2019-07-02
US20190131772A1 (en) 2019-05-02
GB202007058D0 (en) 2020-06-24
JP7108366B2 (en) 2022-07-28
US11070029B2 (en) 2021-07-20
DE112018004477T5 (en) 2020-06-18
US10734787B2 (en) 2020-08-04
DE112018004477B4 (en) 2022-01-13
WO2019087004A1 (en) 2019-05-09
CN111247704B (en) 2022-06-14
US20190252859A1 (en) 2019-08-15

Similar Documents

Publication Publication Date Title
GB2580578A (en) Electro-optical device with lateral active regions
WO2016194369A1 (en) Semiconductor optical modulation element
JP6650699B2 (en) Laser device and method of manufacturing laser device
US10763644B2 (en) Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals
US11860410B2 (en) Photonic integrated circuit platform and optical phase array device using the same
US10447006B2 (en) Electro-optical device with asymmetric, vertical current injection ohmic contacts
CN105305230A (en) Optical semiconductor device
JP2019054107A (en) Semiconductor optical element
KR20140130936A (en) Ridge waveguide semiconductor laser diode and method for manufacturing the same
US10305251B2 (en) Laser diodes with layer of graphene
KR102366164B1 (en) Mach-zehnder electro-optic modulator and fabrication method of the same
JP2013165201A (en) Semiconductor optical element, semiconductor optical module and manufacturing method of the same
JP2015220323A (en) Semiconductor optical device
US10903620B2 (en) Semiconductor device, and method for manufacturing semiconductor device
Cheung et al. Theory and design optimization of energy-efficient hydrophobic wafer-bonded III–V/Si hybrid semiconductor optical amplifiers
US10605989B2 (en) Method of manufacturing an integrated semiconductor optical waveguiding device
JP6622152B2 (en) Optical element
KR102452494B1 (en) Photonic crystal semiconductor laser device and its manufacturing method
JP7525535B2 (en) DEVICE COMPRISING OPTICAL WAVEGUIDE HAVING A LATERALLY TAPERED WAVEGUIDE CORE - Patent application
CN112670823B (en) Method for manufacturing electric absorption modulation laser
JP4430961B2 (en) Electroabsorption type light modulation element and method for manufacturing the same
JP6491612B2 (en) Semiconductor optical integrated device
JP2013149845A (en) Semiconductor wafer, method for manufacturing semiconductor wafer, semiconductor light emitting element, and method of manufacturing semiconductor light emitting element
Okumura et al. First lasing operation of injection type membrane GaInAsP DFB laser with lateral current injection BH structure
JP2019007997A (en) Semiconductor optical element

Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 20220712