GB2558678A - Three-dimensional solar cells - Google Patents
Three-dimensional solar cells Download PDFInfo
- Publication number
- GB2558678A GB2558678A GB1703277.2A GB201703277A GB2558678A GB 2558678 A GB2558678 A GB 2558678A GB 201703277 A GB201703277 A GB 201703277A GB 2558678 A GB2558678 A GB 2558678A
- Authority
- GB
- United Kingdom
- Prior art keywords
- solar cell
- photovoltaic
- cell block
- substrate
- tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 238000000034 method Methods 0.000 claims abstract description 83
- 239000000463 material Substances 0.000 claims abstract description 75
- 230000008569 process Effects 0.000 claims abstract description 65
- 238000010345 tape casting Methods 0.000 claims abstract description 17
- 239000000919 ceramic Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000005245 sintering Methods 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 24
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 229910010293 ceramic material Inorganic materials 0.000 claims description 14
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 238000000197 pyrolysis Methods 0.000 claims description 12
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 11
- 229910004613 CdTe Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000004014 plasticizer Substances 0.000 claims description 11
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 11
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 10
- 239000011230 binding agent Substances 0.000 claims description 10
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052863 mullite Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910001887 tin oxide Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011368 organic material Substances 0.000 claims description 7
- 238000001778 solid-state sintering Methods 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 229910005540 GaP Inorganic materials 0.000 claims description 6
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 239000005361 soda-lime glass Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 239000000725 suspension Substances 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 239000011959 amorphous silica alumina Substances 0.000 claims description 4
- 239000005388 borosilicate glass Substances 0.000 claims description 4
- 239000012780 transparent material Substances 0.000 claims description 4
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005354 aluminosilicate glass Substances 0.000 claims description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 101150050048 SNCB gene Proteins 0.000 claims description 2
- 239000012777 electrically insulating material Substances 0.000 claims description 2
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 98
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 42
- 239000000377 silicon dioxide Substances 0.000 description 21
- 235000012239 silicon dioxide Nutrition 0.000 description 20
- 238000000151 deposition Methods 0.000 description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 238000002844 melting Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 230000008018 melting Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000006259 organic additive Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- -1 poly(methylmethacrylate) Polymers 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003125 aqueous solvent Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000002648 laminated material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/30—Supporting structures being movable or adjustable, e.g. for angle adjustment
- H02S20/32—Supporting structures being movable or adjustable, e.g. for angle adjustment specially adapted for solar tracking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The present invention relates to a three-dimensional solar cell block comprising a substrate; wherein the substrate (1, fig. 1) comprises a plurality of apertures (2); and wherein the plurality of apertures (i) are formed through the substrate, and (ii) have deposited therein a photovoltaic (PV) cell, comprising electrical contacts 4 & 7, P-N junction material 5 & 6 formed in three-dimensional tubular form locatable against an inner wall (3) of said aperture. The present invention also relates to: a solar (photovoltaic) panel incorporating one or more electrically connected solar cell blocks according to the invention; and a method of forming such a solar (photovoltaic) panel. The solar blocks are made using a tape casting process, and it first creates a plurality of half or part apertures, with the PV cell being formed or deposited onto the wall of the aperture, before being joined together to form full apertures.
Description
(54) Title of the Invention: Three-dimensional solar cells Abstract Title: Three-Dimensional Solar Cells (57) The present invention relates to a three-dimensional solar cell block comprising a substrate; wherein the substrate (1, fig. 1) comprises a plurality of apertures (2); and wherein the plurality of apertures (i) are formed through the substrate, and (ii) have deposited therein a photovoltaic (PV) cell, comprising electrical contacts 4 & 7, P-N junction material 5 & 6 formed in three-dimensional tubular form locatable against an inner wall (3) of said aperture. The present invention also relates to: a solar (photovoltaic) panel incorporating one or more electrically connected solar cell blocks according to the invention; and a method of forming such a solar (photovoltaic) panel. The solar blocks are made using a tape casting process, and it first creates a plurality of half or part apertures, with the PV cell being formed or deposited onto the wall of the aperture, before being joined together to form full apertures.
//// O;
I
B—
S Z»*· ~
Fig 2
1/9
Fig 2
2/9
Fig 3
Fig 4A
3/9
SOLAR LIGHT
Fig 4B
Fig 5
4/9
W
Fig 6B
Fig 6C
5/9
Fig 7A
Fig 7B
Fig 7C
6/9
15
Fig 7D
7/9
15 7
Fig 7E
8/9
Fig 8A
Fig 8B
919
F'99
THREE-DIMENSIONAL SOLAR CELLS
The present invention relates to a three-dimensional solar photovoltaic) cell or solar cell block, a solar (photovoltaic) panel incorporating one or more such solar cells or solar cell blocks, and a method of construction of the solar panel and/or of the solar cell or solar cell block.
Background of the Invention
Photovoltaic (PV) Cells are low power density devices that typically generate about °.°l-0.02 Watt per square centimetre based on existing commercial PV panel efficiencies of 15% 20%.
Material research for improving the efficiencies of the various semiconducting materials that make up the PV cell is long term, and has been very slow in offering any dramatic improvements to the material efficiency form their current level. Commercial PV panel efficiencies range from 15 to 18% for Poly-crystalline and Mono-Crystalline material respectively, with some companies offering efficiencies of 20% - 22% for Mono-Crystalline materials. This slight increase in the efficiency came about generally as a result of improvement in the fabrication of the components of the solar cells, such as replacing the electrical contact at the back of the solar cell, which resulted in a top surface free from any shading caused by the electrical contact tab wires and bus-bars. On the other hand, commercial thin film PV panels have much lower efficiencies than crystalline PV materials, which usually range from 8% to 16%. Nevertheless, thin film cells use only a 10-20 micron thick semiconducting material which is about ΟΙ
10% of the material used in crystalline PV cells of 200-300 microns thickness; hence it offers a huge saving in the semiconductor material, which usually represents 40% of the total production cost of a PV panel.
PV devices with higher conversion efficiencies of 30-40% have been demonstrated in laboratories across the world. Such devices tend to be made out of multiple layers of complex and expensive materials. The high cost of such devices means that they are only being used in niche applications where efficiency matters but cost is not necessarily a factor, in particular in space applications.
Other methods of increasing the efficiency of the PV cell, such as cell surface texturing, nano-rods or nano/micro holes on the surface of the semiconducting material of the PV cell, have all resulted in a better light trapping and better absorption for the photons of the incident radiation light. Such approaches are showing a promise of increasing the efficiency of the device by 10-20% from its current efficiency level, but these nano wires, rods & holes have not been demonstrated on a commercial device yet and remain only as a focus of research so far.
The deployment of solar technology worldwide has gained pace in the last ten years, with more developing countries considering it as a serious alternative to building power stations which burn fossil fuels such as oil, gas and/or coal. PV plants can be deployed to power villages in rural areas in developing countries without the need to build an electrical transmission network, which is an expensive and lengthy process to achieve. Hence PV and other renewable technologies have become the preferable choice to power millions of people, across large land areas, who would otherwise have no access to electricity. Developed countries also consider solar / PV technology as a serious alternative which reduces carbon dioxide emissions without comprising the average citizen's standard of living, by reducing the level of energy consumption which is necessary to deliver such a standard.
The limitation of the low power density for solar panels means that in order to generate an appreciable power output, a large surface area of solar panels is needed. (The typical dimension of commercial PV panels of 250-300Wp is between 1-2 meters long and approximately 1 m wide with a thickness of about 2050 mm) . This factor, coupled with the planar shape of solar panels, have reduced the potential for their wide scale deployment on commercial & public building roofs, since roofs have limited surface areas. This means that only a small fraction of the energy consumption of buildings can be generated by solar panels. In fact, out of the total solar energy generated so far, the largest portion of it comes from ground mounted installations that occupy thousands of hectares of land.
The current invention aims to mitigate one or more of the following three problems of the current conventional planar PV panels :
(i) to increase the PV panel power density while keeping the land surface area used (i.e. the area of land covered directly or indirectly by PV devices/panels) constant;
(ii) to decrease the cost of production of PV devices; and/or (iii) to change the planar PV cell geometry, in the current invention by changing from a two-dimensional (2-D) to a three-dimensional (3-D) geometry, which opens up possibilities of new designs and/or applications for PV (solar) devices.
A further aim of the present invention is to provide a 3-D Photovoltaic (PV) cell architecture design, which departs from the conventional 2-D shape of planar PV cell. Said new design increases the PV surface area of the PV cell, by allowing for more of the semiconducting material to be deposited on larger surface area, with only a slight increase in the volume and in the depth or thickness dimension of the PV cell. The design also allows for the possibility of an increase in the amount of incident radiation which is absorbed and converted to electricity. The combined effects of the 3-D architecture of the present invention: (i) allow the possibility of the planar PV cell, which is known to be a low power density device, becoming a higher power density device; and/or (ii) allow the possibility of changing the production methods and/or reducing the production costs of PV cells / devices.
Summary of the Invention
According to a first aspect of the present invention, there is provided a three-dimensional solar cell block comprising a substrate;
wherein the substrate comprises a plurality of apertures;
and wherein the plurality of apertures (i) are formed through the substrate, and (ii) have deposited therein a photovoltaic (PV) cell formed in three-dimensional tubular form locatable (preferably located) against an inner wall of said aperture.
The first aspect of the present invention also provides a three-dimensional solar cell block comprising a substrate having a plurality of apertures formed therethrough, each aperture having deposited therein a photovoltaic cell formed in three-dimensional tubular form locatable (preferably located) against an inner wall of said aperture.
The aperture (s) , as defined in the present invention, are sometimes referred to as photovoltaic-cell-containing aperture (s) , or similar, in the present patent application. The two terms are interchangeable.
Preferably, the substrate comprises 3 or more, 4 or more or 5 or more, more preferably 8 or more or 10 or more, most preferably 15 or more or 18 or more, of the photovoltaic-cellcontaining apertures.
Preferably, the apertures (the photovoltaic-cell-containing apertures) extend, and/or each aperture extends, through the entire width of the substrate. Alternatively, and also preferably, the apertures (the photovoltaic-cell-containing apertures) extend through part of (preferably most of, i.e. >50% of, more preferably >90% of or >95% of or >99% of) the width of the substrate.
Preferably, the block further comprises a back plate located against one surface of the substrate, so as to cover one end of the photovoltaic-cell-containing apertures, and/or so as to cover one end of each aperture.
Preferably, the back plate is reflective, so as to direct light back into the photovoltaic-cell-containing apertures, and/or so as to direct light back into each aperture.
Preferably, the substrate comprises (in particular consists essentially of) a non-conductive ceramic material, in particular mullite (preferably 3AI2O3.2S1O2 or 2AI2O3. S1O2) , alumina (AI2O3) , amorphous silica-alumina, and/or silicon nitride (preferably comprising, e.g. consisting essentially of, S13N4) . Alternatively or additionally, and also preferably, the substrate material comprises (in particular consists essentially of) a non-conductive glass sheet(s), for example transparent glass sheet(s) preferably made out of soda-lime-silica glass (also called soda-lime glass, typically SiO2.Na2O.CaO in a variety of proportions, e.g. preferably comprising ca. 70-75 weight! S1O2, ca. 10-18 weight! NaO, and ca. 6-14 weight! CaO, and optionally also comprising ca. 0.052.0 weight! AI2O3 and/or ca. 0.05-6 weight! MgO), borosilicate glass, borate and/or lithium containing glass (typically comprising B2O3 . S1O2 . AI2O3 in a variety of proportions, and optionally also containing L12O) , and/or alumina-silica glass and/or aluminosilicate glass.
In an alternative particular embodiment, the substrate comprises (in particular consists essentially of) a conductive material, preferably silicon carbide (SiC) and/or siliconinfiltrated silicon carbide (SiSiC) (also called Reaction Bonded SiC (RB SiC), or siliconized silicon carbide).
Preferably, the photovoltaic (PV) cell according to or used in the invention, in particular the PV cell formed in threedimensional tubular form, comprises a back electrical contact, a front electrical contact, and one or more photovoltaic materials (preferably one or more photovoltaic, P-N junction semiconductor materials) positioned (preferably sandwiched) between the front and back electrical contacts.
Preferably, the back electrical contact forms an inner layer of the PV cell (i.e. forms a layer in contact with the substrate and/or in contact with a barrier layer if present which may coat the substrate) . Preferably, the back electrical contact comprises a metal (preferably molybdenum, aluminium and/or another suitable metal) and/or antimony telluride (Sb2Te3) .
Preferably, the front electrical contact comprises (in particular consists essentially of) a transparent conductive oxide (TCO). More preferably, the front electrical contact comprises (in particular consists essentially of) tin oxide doped with fluorine (SnC>2:F, also called fluorine-doped tin oxide, FTO), indium oxide doped with tin (ITO, indium tin oxide, preferably oxygen-saturated ITO), indium-doped cadmium oxide, and/or doped zinc oxide (preferably zinc oxide doped with aluminium (AZO) or with gallium (GZO) or with indium (IZO)) . Particularly preferably, the front electrical contact comprises a layer of doped zinc oxide (preferably AZO) ; and/or particularly preferably has a thickness of from 0.3 to 20 microns or from 0.5 to 10 microns, more preferably from 1.5 to 6 pm (microns).
Preferably, the photovoltaic (PV) cell according to or used in the invention, in particular the PV cell formed in threedimensional tubular form, comprises one or more photovoltaic (PV) materials, in particular one or more photovoltaic, P-N junction semiconductor materials. More preferably, the one or more photovoltaic (PV) materials comprise (in particular consist essentially of) cadmium telluride and/or cadmium sulfide (CdTe and/or CdS), copper indium gallium selenide (CIGS - CuInxGa (i-x) Se2, wherein 0 < x < 1), gallium arsenide (GaAs), indium gallium phosphide (GalnP, GaxIni-xP, wherein 0 < x < 1, preferably Gao.5Ino.5P) , indium gallium arsenide (InixGaxAs, wherein 0 < x < 1), and/or indium gallium phosphide arsenide (GalnAsP), and/or silicon (Si) (e.g. in polycrystalline, nano (micro) crystalline, protocrystalline and/or in amorphous form), and/or a polymeric and/or organic, semiconducting, photovoltaic material(s). More preferably, the one or more photovoltaic (PV) materials comprise (in particular consist essentially of) cadmium telluride and/or cadmium sulfide (CdTe and/or CdS), copper indium gallium selenide (CIGS), gallium arsenide (GaAs), and/or silicon (Si). Even more preferably, the one or more photovoltaic (PV) materials comprise (in particular consist essentially of) cadmium telluride and/or cadmium sulfide; or most preferably comprise (in particular consist essentially of) cadmium telluride and cadmium sulfide.
Particularly preferably, the one or more photovoltaic (PV) materials, in particular the one or more photovoltaic, P-N junction semiconductor materials, comprise a first (preferably inner) layer of a p-type semiconductor (particularly preferably cadmium telluride and/or particularly preferably having a thickness of from 0.2 to 25 microns, particularly of from 0.5 to 10 microns or from 1 to 5 microns), and a second (preferably outer) layer of an n-type semiconductor (particularly preferably cadmium sulfide and/or particularly preferably having a thickness of from 0.01 to 10 microns, particularly of from 0.02 to 2 microns or from 0.03 to 0.5 microns), wherein the p-type and n-type semiconductor layers together form a photovoltaic P-N junction (preferably a PV P-N heterojunction). Preferably, the p-type semiconductor and/or the n-type semiconductor are or have been deposited by sputtering, electro disposition (ED) or high vacuum evaporation (HVE) and/or at a temperature of from 200 to 650°C or from 300 to 550°C such as about 450°C.
Preferably, the photovoltaic (PV) cell according to or used in the invention, in particular the PV cell formed in threedimensional tubular form, further comprises a highly resistive and transparent (HRT) layer, preferably positioned (e.g. sandwiched) between the front electrical contact and the one or more photovoltaic materials (more preferably between the front electrical contact and the one or more photovoltaic, P-N junction semiconductor materials), and/or preferably having a
| thickness | of | from | 0.05 to | 5 microns e.g. from | 0.15 | to 2 |
| microns . | The | HRT | layer is | formed from one or | more | highly |
| resistive | and | transparent | materials, preferably | tin | oxide |
(SnO2) and/or indium oxide (In2O3) . The HRT layer generally functions to reduce the electrical losses at the local shunts and/or at the grain boundaries which can occur in cells with reduced thickness.
Preferably, between the back electrical contact and the substrate or substrate material, is a barrier layer which coats the substrate or substrate material. The barrier layer preferably comprises (in particular consists essentially of) silicon dioxide (S1O2) and/or silicon nitride (SiNx) , in particular silicon dioxide (S1O2) and/or silicon nitride comprising (e.g. consisting essentially of) S13N4. The barrier layer preferably has a thickness of from 0.1 to 20 microns or from 0.3 to 10 microns, and more preferably has a thickness of from 0.5 to 4 microns (micrometres). The barrier layer functions to control or minimize the movement of impurities (if present) from the substrate to the above-deposited layer(s) - in particular to minimize the movement of impurities (if present) from the substrate to the back electrical contact, to the one or more photovoltaic materials, and/or to the front electrical contact.
Preferably, part or substantially all (preferably most or substantially all) of the ridge areas of an outer surface of the solar cell block (the ridge areas being the raised areas between the apertures) is/are coated with an electrically insulating material (preferably S1O2) so as to electrically insulate ridge-area-portions of the back electrical contact(s) and/or of the front electrical contact(s).
Particularly preferably, the substrate is manufactured by a tape casting process. The preferred tape casting process is generally a low-cost process for making high quality laminated material, and is suitable for making large-area, thin, flat ceramic parts; the process is not labour intensive, and is suitable to be integrated in the PV film manufacturing assembly on a belt to belt basis.
The preferred tape casting process generally involves the production of generally-flat sheets of flexible tapes of ceramic materials. The process of forming the tape preferably uses a slip suspension or slurry of ceramic particles in a liquid. The liquid preferably comprises (e.g. consists essentially of) an organic binder (preferably dissolved organic binder), a plasticiser (preferably an organic plasticiser) and/or a deflocculant (preferably an organic deflocculant) (preferably the organic binder, plasticizer and deflocculant) in a solvent system (e.g. comprising a suitable organic and/or aqueous solvent). After mixing, the resulting slip suspension or slurry is preferably casted on a surface and the solvent is allowed to evaporate, and the remaining binder and plasticiser and adhering ceramic particles form a handleable tape, which - before heating (and/or before pyrolysis and/or firing and/or sintering) - is typically called a green tape. In this context, a green tape means a tape which has not been heated substantially, in particular which has not been pyrolysed, fired and/or sintered. After drying, the green (unheated) tape is preferably rolled onto a spool for use in a roll-to-roll process; or preferably the tape is striped, cut and/or laminated.
In the processing stage of the preferred tape casting process, preferably, apertures are punched in the green (unheated) tape substrate. The apertures can be of any shape and/or size, and/or can be in any depth of substrate. The apertures preferably have a shape, size and/or depth such as to maximise the surface area, in particular to maximise the surface area of the inner walls of the apertures. Preferably, the apertures are generally cyclindrical and/or generally tubular in shape and/or are generally circular in cross-section.
After apertures (unheated) tape line (s) passing apertures, e.g.
have been created in the tape, the green is preferably cut longitudinally along a through substantially the centre of the forming a plurality of part-apertures (preferably a plurality of substantially half-apertures) in the resulting tape segments.
Preferably, the unheated tape is cut generally longitudinally into elongate segments, preferably containing a plurality of part-apertures (preferably a plurality of substantially halfapertures) .
The segments of ceramic green (unheated) tapes are then preferably fired and/or sintered in a furnace, preferably either in air or under a protective and non-oxidising atmosphere (e.g. nitrogen and/or argon), e.g. depending on the type of the ceramic material used.
The preferred firing and/or sintering process is preferably divided into two stages.
The first stage is preferably a pyrolysis stage (usually at a temperature up to about 550°C, in particular from 200 to
550°C, preferably from 300 to 550°C, or from 350 to 500°C) , wherein most or substantially all of the organic materials (in particular, a or the organic binder, a or the organic plasticiser and a or the organic deflocculant) are burnt out of the green (unheated) tape, substantially without leaving any residue or any significant residue. The removal of the organic additives/materials is generally a process comprising thermal decomposition and/or evaporation of the organic additives/materials and/or the subsequent removal of any volatile compounds from the tape segments.
Once the preferred pyrolysis stage is completed, the second stage of the process is preferably a sintering process (more particularly, a ceramic sintering process), which takes place at higher temperatures than the pyrolysis process. Preferably, the sintering process takes place at from 715 to 1700°C, more preferably at from 850 to 1600°C, or even more preferably at from 980 to 1500°C or from 1050 to 1400°C.
Preferably, the sintering process is a solid-state sintering process, more preferably a solid-state sintering process in which the green (unheated) tape is heated to a temperature which is from 0.4 to 0.95 of, preferably from 0.5 to 0.9 of or more preferably from 0.6 to 0.8 of, the melting point of the ceramic substrate(s) (using the Kelvin scale), even more preferably a solid-state sintering process in which the green (unheated) tape is heated to a temperature which is from 0.4 to 0.95 of, preferably from 0.5 to 0.9 of or more preferably from 0.6 to 0.8 of, the melting point of the lowest-melting ceramic material present within the ceramic substrate(s) (using the Kelvin scale). The sintering process aims to achieve densif ication of the ceramic tape, e.g. to achieve a density of or approaching or closer to that of the theoretical material density. Therefore, the tape and/or the segments of tape usually shrink in the sintering process.
Preferably, photovoltaic (PV) cell(s) and/or material(s) is or are deposited in a plurality of part-apertures (preferably substantially half-apertures) of the heated (e.g. sintered) tape segments; more preferably by coating the plurality of part-apertures with a material for the back electrical contact, with the one or more PV materials, and/or with a material for the front electrical contact, and/or with one or more other optional or preferred materials, in particular as described herein.
Preferably, the heated (preferably sintered) tape(s) or tape segments contain (and/or wherein on the heated eg sintered tape(s) or tape segments is or has been deposited) a plurality of photovoltaic-material-coated part-apertures (preferably substantially half-apertures), and wherein the tape(s) or tape segments are joined electrically to each other (preferably using a solder alloy, and/or preferably in parallel and/or in series), in such a way so as to form a block having a plurality of complete apertures (preferably generally tubular and/or generally cyclindrical apertures) within which are photovoltaic cells. More preferably, said block forms or is comprised in the solar cell block and/or the substrate e.g. as defined in the first and/or other aspects of the present invention.
In a second aspect of the present invention, there is provided a solar (PV) panel incorporating (in particular formed from and incorporating) one or more (preferably more than one) solar cell blocks according to the first aspect of the invention; wherein the one or more (preferably the more than one) solar cell blocks are electrically connected.
In a third aspect of the present invention, there is provided a method of forming a solar panel incorporating one or more (preferably more than one) solar cell blocks electrically connected. Preferably, the one or more (preferably the more than one) solar cell blocks are according to the first aspect of the invention.
Preferably, the method of forming the solar panel comprises: incorporating the one or more (preferably the more than one) solar cell blocks into the solar panel; and electrically connecting the one or more (preferably the more than one) solar cell blocks; in either order.
Preferably, in the second and/or third aspects of the invention, the one or more (preferably more than one) solar cell blocks are positioned (preferably sandwiched) between a glass sheet and polymer sheet material to encapsulate the one or more solar cell blocks therein.
Preferably, in the first aspect of the invention, one or more (preferably more than one) solar cell blocks according to the first aspect of the invention are positioned (preferably sandwiched) between a glass sheet and polymer sheet material to encapsulate the one or more solar cell blocks therein.
The preferred, particular and/or embodiment features of the first aspect of the invention also apply to the second and/or third aspects of the invention, with all necessary changes made. The preferred, particular and/or embodiment features of the second aspect of the invention also apply to the first and/or third aspects of the invention, with all necessary changes made. The preferred, particular and/or embodiment features of the third aspect of the invention also apply to the first and/or second aspects of the invention, with all necessary changes made.
Brief Description of the Drawings
The present invention will now be described by way of example only with reference to the accompanying Figures, in which:
Figure 1 is a perspective view of a three dimensional substrate constructed in accordance with the present invention;
Figure 2A and 2B are simplified block diagram illustrating the photovoltaic (PV) cell layer construction;
Figure 3 shows a 3-dimensional (3-D) cell constructed in accordance with the present invention with textured surface back scattering plate;
Figure 4A and 4B show a 3-D cell mounted on a tracker and a fixed mounting with large dome lens respectively;
Figure 5 shows a 3-D cell with small dome lenses for each hole;
Figures 6A to 6C illustrate the cut procedure for a fabricated substrate with holes, using a tape casting method;
Figures 7A to 7E illustrate the steps of multi-layers deposition to form the 3-D solar cell;
Figures 8A to 8C illustrate cross-sectional views of three dimensional solar cells during processing of assembly of segments after deposition of film; and
Figure 9 is an exploded view of PV panel incorporating the 3-D cell in a framework.
Detailed Description of Preferred Embodiments
Referring first to Figure 1, the present invention provides a 3-dimensional (3-D) photovoltaic (PV) cell made out of a substrate 1 of pre-determined thickness. Apertures 2 are punched into the substrate 1 and extend completely through the substrate 1. The substrate 1 is particularly preferably made from glass or a ceramic; but it is appreciated that the substrate 1 could be made of any suitable material, which allows metal and/or semiconducting material to be deposited on it. Preferably, the substrate 1 can be made of a solid material on which a metal suitable to be a back electrical contact for the PV cell (more preferably molybdenum or aluminium) can be deposited.
The apertures 2 are preferably substantially cylindrical or substantially tubular in shape and/or substantially circular in cross-section, but can be of any shape, diameter and/or depth, with the preferred purpose being to maximise and/or to enlarge the inside surface area.
be seen in Figure 2, the PV cell is generally made of of material(s), particularly layers of different
As can layers materials, wherein the material (s) may be those previously known for PV use.
The PV cell comprises a back electrical (metal) contact 4, a front electrical contact 7, and P-N junction materials 5 & 6 sandwiched between the front and back electrical contacts 4 & 7. Unlike conventional PV cells which are planar, a PV cell used in the present invention is designed and constructed in three dimensions (3D) and provides forms generally tubular or generally cylindrical shape as can be seen in Figure 2A.
The back metal contact 4 forms an inner layer of the PV cell inner layer of the PV cell; i.e. the back metal contact 4 forms a layer in contact with the substrate 1 and/or in contact with a barrier layer 14 (if present, e.g. as described herein) coating the substrate 1.
An array of cells (PV cells) are deposited within the inside walls 3 of the apertures 2 in substrate 1. Depending on the number of apertures, the size of the apertures and the thickness of the substrate, the total areas of the inside walls of the apertures usually leads to an increase in the available surface area that can be covered by the semiconducting material within a specific volume or within a specific area of ground. This will generally have the effect of converting more of the incident radiation to electrical energy, when compared to the original surface area of a conventional planar solar cell.
Referring now to Figure 3, a back scattering layer 8 which has a textured surface 9 is located against the back face of the substrate 1. This layer 8 scatters the incident light back towards the inside walls 3 of the apertures 2, causing the photons of light to bounce back and forth between the walls 3 of the apertures 2, thereby enhancing the light absorption by the semiconducting material on the inside walls 3, and thereby potentially allowing an increase in the cell efficiency with respect to conversion of light to electrical energy.
The production cost of a PV panel, built out of such PV cells of the present invention, could also decrease, since thin films of 10-20 microns (micrometres) can be used for the semiconducting material instead of PV cells of 200-300 microns thickness cut from polycrystalline or monocrystalline ingot, which typically costs about 40% up to almost 50% of any PV panel's production cost. Further cost reduction could in principle result from the saving on the rest of the peripheral components that make up the PV panel and its assembly, such as the front glass panel, the aluminium frames, and the plastic encapsulation for the cell material as protection from oxidation and humidity, which generally accounts for the other approximately 50% of the production cost.
Therefore if, in one scenario, the surface area covered by the semiconducting material in the design of the present invention, could generate the power of four or five PV panels in the conventional planar design, then the cost saving could be translated by saving the peripheral materials used in three or four PV panels, which represents a potentially significant cost reduction of about 30-40% of the total cost of the PV panel production cost.
To avoid issues with shading if the cells are mounted on a fixed system, the cells could be mounted on a tracker 10 such as one shown in Figure 4A. This ensures that the apertures in in the cell block will be always substantially perpendicular to the incident solar radiation, as the tracker 10 follows the sun movement.
In an alternative mounting arrangement, such as that shown in Figure 4B, the three dimensional cell, or the PV panel that comprises many of these cells, is mounted on a fixed mounting system with a dome-shaped lens 11 (usually in the form of a portion of a sphere, preferably a half sphere or less than a half of a sphere) which is able to capture incident radiation from any direction and to refract the radiation downwardly (in particular generally vertically downwardly) into the apertures 2 .
As a further alternative construction, shown in Figure 5, a plurality of small dome lenses 12 are provided which are in proportion to, and which cover, the aperture diameters. The dome lenses 12 are small in relation to the size of the substrate or the solar cell block, but are sufficiently wide to cover one aperture. Preferably, one dome lens 12, which is sufficiently wide to cover one aperture, is positioned to cover the diameter of one aperture. The dome lenses 12 could be integrated into a sheet layer which forms part or all of a or the front sheet of the PV panel. The dome lenses 12 are preferably made out of plastics or glass. Liquid droplets may be provided within these plastic or glass domes, wherein the liquid is conductive and is able to change its shape slightly with a small electrical current, in order to refract or bend the light down into the solar cell aperture.
Figure 6 illustrates the steps and processes for manufacturing and shaping a substrate. The substrate can be manufactured by technique(s) such as, in particular, without limitation, tape casting, slip casting, or extrusion; or the substrate can be manufactured using known techniques such as drilling and/or sawing using machinable ceramics like silicon carbide (SiC) and/or graphite blocks.
The substrate material can be made out of any suitable material on which semiconducting materials, metals and/or conductive oxides can be deposited, such as glass and/or an insulator and/or a ceramic material, preferably glass and/or an insulating ceramic material. The primary reason for using a ceramic substrate is to reduce the consumption of the very pure solar grade silicon significantly. The use of ceramic substrates may also reduce or even eradicate the need for wafer production by sawing. Therefore the impact of substrates, in particular those made from ceramic materials, is significant in term of the cost saving in comparison to the conventional production of ingot and wafer based cells in the photovoltaics industry.
The features and/or characteristics of the substrate, which are preferred in the present invention and/or which are preferred for thin-film deposition process(es) used to deposit solar-cell and/or PV material (s) on the substrate, are as follows .
Preferably, the substrate is mechanically stable at high temperatures in particular in a temperature range of from 1100 to 1400°C. In the case of depositing silicon, preferably, the substrate is mechanically stable in the temperature range of 1100-1400°C; using temperatures of 1100-1400°C yields a higher silicon deposition rate, and due to silicon's crystallisation at about 1000°C, should also yield a larger grain size with minimal defects and/or with enhanced material properties.
Preferably, the substrate has a thermal expansion coefficient (TEC) which substantially matches that of the materials/substances (preferably the multiple layers of metals and/or the semiconducting materials and/or conductive oxides) which form the PV cell(s) in the present invention.
Preferably, the substrate has a bending strength of about 150 MPa or more, to withstand the stresses during the cooling process after deposition, and/or during screen printing and/or lamination process(es).
Achieving a substrate material which is low cost and high purity simultaneously is very difficult, as harmful metals are generally present in the free form while those bound in the form of oxide are generally less beneficial. Therefore, during the deposition of multiple layers of materials on the substrate, additional impurities may pass from the substrate to these layers.
Therefore, preferably, in particular in order to control or minimize the movement of impurities from the substrate to the deposited layer(s), a (thin) barrier layer is provided, preferably deposited directly onto the substrate. The barrier layer preferably has a thickness of from 0.1 to 20 microns or from 0.3 to 10 microns, and more preferably has a thickness of 0.5 - 4 pm (microns, micrometres). The barrier layer preferably also has the same preferred features or characteristics as the substrate, in particular as described herein e.g. hereinabove. Preferably, the barrier layer is formed from a material comprising (e.g. consisting essentially of) silicon dioxide (S1O2) and/or silicon nitride (SiNx) , in particular silicon dioxide (S1O2) and/or silicon nitride comprising (e.g. consisting essentially of) S13N4.
One of the preferred embodiments of this invention is to manufacture the substrate by the tape casting process. While the invention is described in conjunction with specific embodiments, it will be understood that it is not intended to limit the invention to the described embodiments.
The preferred tape casting process is a low-cost process for making high quality laminated material, for which good thickness control and surface finish are required. The tape casting process is ideal for making large-area, thin, flat ceramic parts. The equipment used in the process is readily available and inexpensive. The process is not labour intensive and is suitable to be integrated in the PV film manufacturing assembly on a belt to belt basis, while still being suitable for both small and mass volume production.
The preferred tape casting process involves the production of generally-flat sheets of flexible tapes of ceramic materials. The process of forming the tape uses a slip suspension or slurry of ceramic particles in a liquid. The liquid comprises (e.g. consists essentially of) dissolved organic binder, plasticiser (e.g. organic plasticiser) and deflocculant (e.g. organic deflocculant) in a solvent system (e.g. comprising a suitable organic and/or aqueous solvent). After mixing, the resulting slip suspension or slurry is casted on a flat surface and the solvent is allowed to evaporate, and the remaining binder and plasticiser and adhering ceramic particles form a handleable tape, which - before heating (and/or before pyrolysis and/or firing and/or sintering) - is typically called a green tape. In this context, a green tape means a tape which has not been heated substantially, in particular which has not been pyrolysed, fired and/or sintered - it does not mean the tape is green in colour or is environmentally-acceptable. After drying, the green (unheated) tape is rolled onto a spool for use in a roll-toroll process; or the tape is striped, cut and/or laminated.
In the processing stage, apertures 2 are punched in the green (unheated) tape substrate 1, as shown in Figure 6A. The apertures 2 can be of any shape and/or size, and/or can be in any depth of substrate 1. The apertures 2 preferably have a shape, size and/or depth such as to maximise the surface area, in particular to maximise the surface area of the inner walls of the apertures. Preferably, the apertures 2 are generally cyclindrical in shape and/or are generally circular in cross-section.
After the apertures have been created in the tape, the green (unheated) tape is cut longitudinally along a line(s) passing through substantially the centre of the apertures; preferably the tape is cut along the dashed lines shown in Figure 6A which pass through the centre of the apertures. Generally, the tape is cut longitudinally into elongate segments 13, e.g. as shown in Figure 6B .
The segments 13 of ceramic green (unheated) tapes are then fired and/or sintered in furnaces, either in air or under a protective and non-oxidising atmosphere (e.g. nitrogen and/or argon), depending on the type of the ceramic material used.
The firing and/or sintering process is preferably divided into two stages.
The first stage is the pyrolysis stage (usually at a temperature up to about 550°C, in particular from 200 to
550°C, preferably from 300 to 550°C, or from 350 to 500°C) , wherein substantially all of the organic materials (in particular, a or the organic binder, a or the organic plasticiser and a or the organic deflocculant) are burnt out of the green (unheated) tape, substantially without leaving any residue or any significant residue. The removal of the organic additives/materials is generally a process comprising thermal decomposition and/or evaporation of the organic additives/materials and/or the subsequent removal of any volatile compounds from the tape segments.
Once the pyrolysis stage is completed, the second stage of the process, which is a sintering process (more particularly, a ceramic sintering process), takes place at higher temperatures than the pyrolysis process. Preferably, the sintering process takes place at from 715 to 1700°C, more preferably at from 850 to 1600°C, or even more preferably at from 980 to 1500°C or from 1050 to 1400°C. Preferably, the sintering process is a solid-state sintering process, more preferably a solid-state sintering process in which the green (unheated) tape is heated to a temperature which is from 0.4 to 0.95 of, preferably from 0.5 to 0.9 of or more preferably from 0.6 to
0.8 of, the melting point of the ceramic substrate(s) (using the Kelvin scale), even more preferably a solid-state sintering process in which the green (unheated) tape is heated to a temperature which is from 0.4 to 0.95 of, preferably from 0.5 to 0.9 of or more preferably from 0.6 to 0.8 of, the melting point of the lowest-melting ceramic material present within the ceramic substrate (s) (using the Kelvin scale). When the substrate comprises (e.g. consists essentially of) silicon dioxide (S1O2, whose melting point when amorphous is 1713°C = 1986 K) , then the preferred sintering temperature is from 992 K (719°C) to 1787 K (1514°C), more preferably from 1192 K (919°C) to 1589 K (1316°C) . When the substrate comprises (e.g. consists essentially of) silicon nitride which comprises (e.g. consists essentially of) S13N4 (whose melting and decomposition point is 1900°C = 2173 K) , then the preferred sintering temperature is from 1086 K 813°C) to 1955 K (1682°C) and/or is from 1304 K (1031°C) to 1738 K (1465°C) . When the substrate comprises (e.g. consists essentially of) alumina (AI2O3) , whose melting point is 2072°C = 2345 K, then the preferred sintering temperature is from
1173 K (900°C) to 2111 K (1838°C) and/or is from 1407 K 1134°C) to 1876 K (1603°C) .
The objective of the sintering process is to achieve densification of the ceramic tape, e.g. to achieve a density of or approaching or closer to that of the theoretical material density. Therefore, the segments 13 of tape usually shrink in the sintering process.
For more information on ceramics sintering, see L.C. DeJonghe et al, Chapter 4, Sintering of Ceramics, in Handbook of Advanced Ceramics, ed. S. Somiya et al, 2003, Elsevier, pp. 187-264 .
The material of the substrate preferably comprises (in particular consists essentially of) a non-conductive ceramic material, in particular mullite (preferably 3AI2O3.2S1O2 or 2AI2O3. S1O2) , alumina (AI2O3) , amorphous silica-alumina, and/or silicon nitride (preferably comprising, e.g. consisting essentially of, S13N4) . There are also other low cost nonconductive materials substrates. So, alternatively and preferably, the substrate material comprises (e.g. consists essentially of) a non-conductive glass sheet (s), for example transparent glass sheet(s) preferably made out of soda-limesilica glass (also called soda-lime glass, typically SiO2.Na2O.CaO in a variety of proportions, e.g. preferably comprising ca. 70-75 weight! S1O2, ca. 10-18 weight! NaO, and ca. 6-14 weight! CaO, and optionally also comprising ca. 0.052.0 weight! AI2O3 and/or ca. 0.05-6 weight! MgO), borosilicate glass, borate and/or lithium containing glass (typically comprising B2O3. S1O2.AI2O3 in a variety of proportions, and optionally also containing Li20) , and/or alumina-silica glass and/or aluminosilicate glass.
Conductive materials for the substrate, on the other hand, include materials such as, preferably, silicon carbide (SiC) and/or silicon-infiltrated silicon carbide (SiSiC) (alternatively called Reaction Bonded SiC (RB SiC), or siliconized silicon carbide).
In a particular embodiment of the sintering sintering aid is introduced into the substrate allow lower sintering temperatures.
process, material a
to together with problems in preparation and/or during coverage of surface during thin-film chemical process steps.
In general, with the tape casting process, the presence of pores in the bulk and on the surface of the substrate, a relatively high roughness, usually causes the wet
Therefore, once the sintering process is completed, the surface of these ceramic segments is preferably mechanically polished to obtain a smoothness and/or a surface finish which is/are good enough to allow the deposition of a plurality of layers of different thin films, preferably a smoothness good enough to allow deposition of a plurality of layers without substantial gaps in surface coverage in the film or films deposited.
Any type of photovoltaic material(s) and/or solar cell material (s) can be deposited on a or the substrate. Preferably, the photovoltaic (PV) material(s) comprises (in particular consists essentially of) cadmium telluride and/or cadmium sulfide (CdTe and/or CdS), copper indium gallium selenide (CIGS - CuInxGa (i-X) Se2, wherein 0 < x < 1), gallium arsenide (GaAs), indium gallium phosphide (GalnP, GaxIni-xP, wherein 0 < x < 1, preferably Gao.5Ino.5P) , indium gallium arsenide (Ini-xGaxAs, wherein 0 < x < 1), and/or indium gallium phosphide arsenide (GalnAsP) , and/or silicon (Si) (e.g. in polycrystalline, nano (micro) crystalline, protocrystalline and/or in amorphous form), and/or a polymeric and/or organic, semiconducting, photovoltaic material(s). More preferably, the PV material(s) comprises (in particular consists essentially of) cadmium telluride and/or cadmium sulfide (CdTe and/or CdS), copper indium gallium selenide (CIGS), gallium arsenide (GaAs), and/or silicon (Si). Most preferably, the PV material (s) comprises (in particular consists essentially of) cadmium telluride and/or cadmium sulfide.
Example 1
For the purpose of illustrating how to fabricate 3-D solar cell apertures, an example of the most popular solar cell type in the market is illustrated, namely cadmium telluride solar (PV) cells, more specifically cadmium telluride-cadmium sulfide (CdTe-CdS) solar (PV) cells. This example is illustrative, and does not restrict the scope of the claimed invention.
The cadmium telluride CdTe solar cell is a multilayer thin film PV device with CdS (N-Type semiconductor) 6 and CdTe (PType semiconductor) 5 forming an n-p heterojunction, sandwiched between layers of front 7 and back 4 electrical contacts. The choice of the ceramic substrate material fabricated by the tape casting process could be either borosilicate glass or soda-lime glass or mullite.
Mullite ceramic (preferred formula 3AI2O3-2S1O2 and/or 2AI2O3S1O2) seems to have many advantages over the glass. From a light reflectance point of view, the mullite is found to reflect 80-90% of the incident light and, therefore, might act as a good back reflector. Another important factor is the matching of the thermal expansion coefficient between mullite (TEC 5 x 10_6K_1) on the one hand, and CdTe and/or the back electrical contact material molybdenum (Mo) (both with TEC of 5 x 10_6K_1) on the other hand.
The Fabrication of a 3-D solar aperture starts by stacking the ceramic substrate segments 13 with the half-apertures 2, 3 upwardly-directed (or upwardly- or downwardly- directed), e.g. as shown in Figure 6C and/or in Figure 7A, in preparation for the deposition of a plurality of layers (multiple layers). In this example, the ceramic substrate is mullite.
Figure 7 is a simplified block diagram illustrating the fabrication steps for the 3-D solar aperture cell. A barrier layer 14, formed from a layer of SiO2 having a thickness of 0.5 - 4 pm (microns), is deposited first on the mullite surface by Plasma Enhanced Chemical Vapor Deposition (PECVD), in particular as shown in Figure 7B.
Before depositing the back contact 4, a photoresist layer 15 is applied over the areas of the substrate segment where no back contact 4 should be deposited. A variety of photoresist materials known in the art can be used, including for example,
PMMA [poly(methylmethacrylate) ] , PMGI [poly(methylglutarimide)], phenol formaldehyde resin (with or without diazonaphthoquinone), and/or an epoxy-based photoresist (in particular SU-8, available from Microchem or Gersteltec) . The photoresist 15 can be applied in a manner acceptable for the type of photoresist, e.g. as known in the art. In one preferred embodiment, a photoresist layer 15 is applied as a paste by screen printing over the selected areas of the segments substrate, preferably as shown in Figure 7C.
The back contact 4 is formed by sputtering, firstly, a 0.8 pm (micron) thick layer of molybdenum (Mo), followed by a 0.1 pm (micron) thick layer of Sb2Te3.
Photoresist layers printing over most areas, preferably as are applied as a paste by screen of the ridges between the half-aperture shown in Figure 7C and/or 7D.
Then, a 2.5 pm (micron) layer of CdTe (a P-Type semiconductor) 5 is applied either by sputtering, electro disposition (ED) or high vacuum evaporation (HVE) at 450°C. This is followed by the application of a 100 nm (0.1 pm, 0.1 micron) thick layer of CdS (an N-type semiconductor) 6, using substantially the same depositing technique and conditions as used to deposit the CdTe.
A highly resistive and transparent (HRT) layer 16 of 500 nm or 0.5 pm (microns) thickness is deposited above the CdS (N-type semiconductor) 6 layer, preferably as shown in Figure 7D. The HRT layer 16 can be formed from a variety of highly resistive and transparent materials, preferably tin oxide (SnCb) and/or indium oxide (I^Cp) . This HRT layer functions to reduce the electrical losses at the local shunts and/or at the grain boundaries which can occur in cells with reduced thickness, e.g. as in the Figure 7D arrangement.
The photoresist layers 15 are removed from certain areas, e.g. as shown in Figure 7E.
This is followed by depositing the last layer which is the front electrical contact 7, which is particularly preferably a transparent conductive oxide (TCO). For the front electrical contact 7, several choices of materials exists. Preferably, the front electrical contact 7 comprises (e.g. consists essentially of) tin oxide doped with fluorine (SnC>2:F, also called fluorine-doped tin oxide, FTO), indium oxide doped with tin (ITO, indium tin oxide, preferably oxygen-saturated ITO), indium-doped cadmium oxide, and/or doped zinc oxide (preferably zinc oxide doped with aluminium (AZO) or with gallium (GZO) or with indium (IZO)).
In one preferred embodiment, a 3 pm (micron) thick layer of AZO is applied as the front electrical contact 7 (TCO), preferably as shown in Figure 7E.
Preferably, the front electrical contact 7 of one half aperture is deposited over a small part of the back electrical contact 4 of a or the next (adjacent) aperture, so as to connect these apertures electrically in series, in particular as shown in the bottom right portion of Figure 7E.
One more layers of an insulator, preferably S1O2 (not shown on the drawing), to insulate the back electrical contacts 4 and front electrical contacts 7, is applied over the ridge areas between the holes, apart from the two ends of the segment 13.
Once the photoresist is removed, the deposition process is complete for these segments.
Each segment of substrate 13 (usually half-cylinders with now comprises many half-apertures a semicircular cross-section); in particular as shown in Figure 8A. One solar (PV) cell 17 is formed in each half-aperture. Within each segment 13, these solar (PV) cells 17 are electrically connected in series to each other. Each segment 13 has one back contact 4 electrical connection and front contact 7 electrical connection that are exposed at each end.
A plurality of segments 13 are joined electrically to each other, preferably using a solder alloy 18. They are joined electrically to each other either in parallel (preferably as shown in Figure 8B) or in series, to form a block with complete apertures 2, in which each aperture 2 comprises (e.g. consists essentially of) two solar cells 17 (preferably as shown in Figure 8B and/or 8C) .
Tab wires 19 from the negative and positive sides, which exit (preferably at the end(s) of the block or substrate 1) from each of the two electrically-joined lines of complete PV apertures (which were formed by electrically and physically joining three individual segments 13), are connected (preferably as shown in Figure 8C) via a negative bus-bar 20 or a positive bus-bar 21, either to another block or substrate 1 or directly to a load.
Figure 9 is an exploded view of a solar (PV) panel made out of many 3-D solar (PV) aperture-containing blocks or substrates 1, which are connected to each other electrically in series and/or in parallel to obtain the required current and voltage out of the PV panel. The solar (PV) panel is formed of a plurality of (e.g. many) 3-D solar (PV) aperture-containing blocks or substrates 1 together with a back scattering plate 8 having a textured surface 9.
The plurality of blocks / substrates 1 and the back scattering plate 8 are sandwiched between a tempered (toughened) glass plate 22 and a backing sheet 23. The backing sheet 23 is preferably formed from a plastic and/or polymer such as EVA and/or (ethylene-vinyl acetate) copolymer. The glass plate 22 and the backing sheet 23, together with a polymeric seal around the edges of the plate 22 and of the sheet 23, function to seal and/or encapsulate the blocks / substrates 1.
The entire sandwich structure is then framed within aluminium frames 24 and a potting (filling) compound, preferably a silicone polymer (e.g. a silicone rubber gel) and/or a polyurethane and/or an epoxy resin, is applied along the top and bottom edges to seal the structure between the aluminium frame and the glass sheet further from any environmental factors like humidity and/or oxidation.
The positive and the negative connections for the whole PV panel preferably exit, through a hole 25 in the backing sheet 23, via electrical cables to a junction box at the back of the PV panel (the junction box is not shown on Figure 9).
In a variant of the above Example, encapsulation is carried out on the segments 13, preferably by dipping them into a potting (filling) compound (e.g. EVA) to seal the solar (PV) cells 17 and the back and front electrical contacts 4, 7, before electrically joining two or more segments 13 preferably by soldering.
The most preferred encapsulation method of the 3-D solar (PV) aperture-containing blocks or substrates 1 would depend on the semiconducting material used, preferably as disclosed in the prior art.
Claims (45)
1. A three-dimensional solar cell block comprising a substrate;
wherein the substrate comprises a plurality of apertures;
and wherein the plurality of apertures (i) are formed through the substrate, and (ii) have deposited therein a photovoltaic (PV) cell formed in three-dimensional tubular form locatable against an inner wall of said aperture .
2. A three-dimensional solar cell block comprising a substrate having a plurality of apertures formed therethrough, each aperture having deposited therein a photovoltaic cell formed in three-dimensional tubular form locatable against an inner wall of said aperture.
3. A solar cell block as claimed in claim 1 or 2, wherein the photovoltaic cell, formed in three-dimensional tubular form, is located against the inner wall of said aperture .
4. A solar cell block as claimed in claim 1, 2 or 3, wherein the substrate comprises 3 or more, 4 or more or 5 or more, more preferably 8 or more or 10 or more, most preferably 15 or more or 18 or more, of the photovoltaiccell-containing apertures.
5. A solar cell block as claimed in claim 1, 2, 3 or 4, wherein the photovoltaic-cell-containing apertures extend, and/or each aperture extends, through the entire width of the substrate.
6. A solar cell block as claimed in claim 1, 2, 3, 4 or 5, wherein the block further comprises a back plate located against one surface of the substrate, so as to cover one end of the photovoltaic-cell-containing apertures, and/or so as to cover one end of each aperture.
7. A solar cell block as claimed in claim 6, wherein the back plate is reflective, so as to direct light back into the photovoltaic-cell-containing apertures, and/or so as to direct light back into each aperture.
8. A solar cell block as claimed in claim 1, 2, 3, 4, 5, 6 or 7, wherein the substrate comprises:
(i) a non-conductive ceramic material, preferably comprising mullite, alumina, amorphous silicaalumina, and/or silicon nitride; and/or (ii) a non-conductive glass sheet(s), preferably made out of soda-lime-silica glass, borosilicate glass, borate and/or lithium containing glass, and/or aluminasilica glass and/or aluminosilicate glass.
9. A solar cell block as claimed in claim 8, wherein the substrate comprises a non-conductive ceramic material comprising mullite, alumina, amorphous silica-alumina, and/or silicon nitride.
10. A solar cell block as claimed in claim 1, 2, 3, 4, 5, 6,
7, 8 or 9, wherein the photovoltaic (PV) cell or cells comprise(s) a back electrical contact, a front electrical contact, and one or more photovoltaic materials positioned between the front and back electrical contacts .
11. A solar cell block as claimed in claim 1, 2, 3, 4, 5, 6, 7, 8 or 9, wherein the photovoltaic (PV) cell or cells comprise(s) a back electrical contact, a front electrical contact, and one or more photovoltaic, P-N junction semiconductor materials positioned between the front and back electrical contacts.
12. A solar cell block as claimed in any of claims 1 to 11, wherein the back electrical contact forms an inner layer of the PV cell, that is forms a layer in contact with the substrate and/or in contact with a barrier layer if such a barrier layer coats the substrate.
13. A solar cell block as claimed in any of claims 1 to 12, wherein the back electrical contact comprises a metal and/or antimony telluride.
14. A solar cell block as claimed in any of claims 1 to 13, wherein the front electrical contact comprises a transparent conductive oxide (TCO).
15. A solar cell block as claimed in claim 14, wherein the front electrical contact comprises tin oxide doped with fluorine (fluorine-doped tin oxide, FTO), indium oxide doped with tin (indium tin oxide, ITO), indium-doped cadmium oxide, and/or doped zinc oxide.
16. A solar cell block as claimed in claim 15, wherein the front electrical contact comprises zinc oxide doped with aluminium (AZO) or with gallium (GZO) or with indium (IZO).
17. A solar cell block as claimed in any of claims 1 to 16, wherein the photovoltaic (PV) cell or cells comprise(s) one or more photovoltaic (PV) materials comprising cadmium telluride and/or cadmium sulfide (CdTe and/or CdS), copper indium gallium selenide (CIGS), gallium arsenide (GaAs), indium gallium phosphide, indium gallium arsenide, and/or indium gallium phosphide arsenide, and/or silicon (Si), and/or a polymeric and/or organic, semiconducting, photovoltaic material(s).
A solar cell block as claimed in claim 17, wherein the one or more photovoltaic (PV) materials comprise cadmium telluride and/or cadmium sulfide (CdTe and/or CdS).
19. A solar cell block as claimed in claim 17 or 18, wherein the one or more photovoltaic (PV) materials comprise a first (preferably inner) layer of a p-type semiconductor (preferably comprising cadmium telluride), and a second (preferably outer) layer of an n-type semiconductor (preferably comprising cadmium sulfide), wherein the ptype and n-type semiconductor layers together form a photovoltaic P-N junction.
20. A solar cell block as claimed in any of claims 1 to 19, wherein the photovoltaic (PV) cell or cells further comprises a highly resistive and transparent (HRT) layer, positioned between the front electrical contact and the one or more photovoltaic materials, wherein the HRT layer is formed from one or more highly resistive and transparent materials.
21. A solar cell block as claimed in claim 20, wherein the one or more highly resistive and transparent materials comprise tin oxide (SnCb) and/or indium oxide (I^Cb) .
22. A solar cell block as claimed in any of claims 1 to 21, wherein, between the back electrical contact and the substrate, is a barrier layer which coats the substrate, wherein the barrier layer functions to control or minimize the movement of impurities (if present) from the substrate to layer(s) deposited above the barrier layer.
23. A solar cell block as claimed in any of claims 1 to 22, wherein, part or substantially all of ridge areas of an outer surface of the solar cell block is or are coated with an electrically insulating material so as to electrically insulate ridge-area-portions of the back electrical contact(s) and/or of the front electrical contact(s); wherein the ridge areas are raised areas between the apertures.
24. A solar cell block as claimed in any of claims 1 to 23, wherein the substrate is or has been manufactured by a tape casting process.
25. A solar cell block as claimed in claim 24, wherein the tape casting process involves the production of generally-flat sheets of flexible tapes of ceramic materials .
26. A solar cell block as claimed in claim 24 or 25, wherein the process of forming the tape preferably uses a slip suspension or slurry of ceramic particles in a liquid, wherein the liquid comprises an organic binder, a plasticiser and/or a deflocculant in a solvent system; wherein, after mixing, the resulting slip suspension or slurry is casted on a surface and the solvent is allowed to evaporate; so that the remaining adhering ceramic particles (and binder and/or plasticiser and/or deflocculant) form a handleable tape.
27. A solar cell block as claimed in claim 24 or 25 or 26, wherein, in the tape casting process, apertures are punched in the unheated tape substrate.
28. A solar cell block as claimed in claim 27, wherein, after apertures have been created in the tape, the unheated tape is cut generally longitudinally into elongate segments wherein the segments contain a plurality of part-apertures (preferably a plurality of substantially half-apertures).
29. A solar cell block as claimed in claim 24, 25, 26, 27 or
28, wherein the tape and/or the segments of unheated tape are fired and/or sintered in a furnace.
30. A solar cell block as claimed in claim 29, wherein the firing and/or sintering process comprises two stages:
(i) a first stage being a pyrolysis stage, wherein most or substantially all of the organic materials are burnt out of the tape or tape segments, substantially without leaving any residue or any significant residue; and
Mi) after the pyrolysis stage is completed, a second stage being a sintering process (more particularly, a ceramic sintering process), which takes place at a higher temperature than the pyrolysis process.
31. A solar cell block as claimed in claim 30, wherein:
(i) the pyrolysis stage takes place at a temperature up to about 550°C, preferably from 200 to 550 °C, more preferably from 300 to 550 °C or from 350 to 500 °C; and/or (ii) the sintering process takes place at from 715 to
1700°C, preferably
at from
850 to 1600°C,
or more
preferably at from
98 0 to
1500°C or from
1050 to
1400 °C.
32. A solar cell block as
claimed
in claim 29, 30
or 31,
wherein the sintering process is a solid-state sintering process .
33. A solar cell block as claimed in claim 29, 30, 31 or 32, wherein a or the photovoltaic cell(s) and/or photovoltaic material (s) is or are deposited in a plurality of part36 apertures of the heated (preferably sintered) tape(s) or tape segments.
34. A solar cell block as claimed in claim 29, 30, 31, 32 or 33, wherein the heated (preferably sintered) tape(s) or tape segments contain (and/or wherein on the heated tape(s) or tape segments is deposited) a plurality of photovoltaic-material-coated part-apertures, and wherein the tape or tape segments are joined electrically to each other, in such a way so as to form a block having a plurality of complete apertures within which are photovoltaic cells; and wherein said block forms or is comprised in the solar cell block and/or the substrate.
35. A solar cell block as claimed in any of claims 1 to 34, wherein one or more of the solar cell blocks are sandwiched between a glass sheet and a polymer sheet
material
therein.
to encapsulate
the one
or more solar
cell bl
.ocks
36.
A solar
(photovoltaic)
panel
incorporating
one or
more
solar cell blocks as defined in any of claims 1 to
35;
wherein
the one or
more
solar cell
blocks
are
electrically connected.
37 .
A solar
(photovoltaic)
panel
as claimed in claim
36,
formed
from and incorporating
one or more
solar
cell
blocks as defined in any of claims 1 to 35; wherein the one or more solar cell blocks are electrically connected.
38. A solar (photovoltaic) panel as claimed in claim 36 or 37, incorporating more than one solar cell blocks as defined in any of claims 1 to 35, and wherein the more than one solar cell blocks are electrically connected.
39. A solar (photovoltaic) panel as claimed in claim 36, 37 or 38, wherein the one or more solar cell blocks are sandwiched between a glass sheet and polymer sheet material to encapsulate the one or more solar cell blocks therein.
40. A solar (photovoltaic) panel as claimed in claim 36, 37,
38 or 39, wherein the one or more solar cell blocks are as defined in any of claims 3 to 35.
41. A method of forming a solar (photovoltaic) panel incorporating one or more solar cell blocks electrically connected, wherein the one or more solar cell blocks are as defined in any of claims 1 to 35.
42. A method as claimed in claim 41, wherein more than one solar cell blocks are electrically connected.
43. A method as claimed in claim 41 or 42, wherein the method of forming the solar panel comprises: incorporating the one or more solar cell blocks into the solar panel; and electrically connecting the one or more solar cell blocks; in either order.
44. A method as claimed in claim 41, 42 or 43, wherein the one or more solar cell blocks are sandwiched between a glass sheet and polymer sheet material to encapsulate the one or more solar cell blocks therein.
45. A method as claimed in claim 41, 42, 43 or 44, wherein the one or more solar cell blocks are as defined in any of claims 3 to 35.
Intellectual
Property
Office
Application No: GB 1703277.2
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1700080.3A GB201700080D0 (en) | 2017-01-04 | 2017-01-04 | Three-dimensional solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB201703277D0 GB201703277D0 (en) | 2017-04-12 |
| GB2558678A true GB2558678A (en) | 2018-07-18 |
Family
ID=58412325
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1700080.3A Ceased GB201700080D0 (en) | 2017-01-04 | 2017-01-04 | Three-dimensional solar cells |
| GB1703277.2A Withdrawn GB2558678A (en) | 2017-01-04 | 2017-03-01 | Three-dimensional solar cells |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1700080.3A Ceased GB201700080D0 (en) | 2017-01-04 | 2017-01-04 | Three-dimensional solar cells |
Country Status (1)
| Country | Link |
|---|---|
| GB (2) | GB201700080D0 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100288350A1 (en) * | 2009-05-12 | 2010-11-18 | Shih-Wei Lee | Solar cell and manufacturing method thereof |
| US20130112243A1 (en) * | 2011-11-04 | 2013-05-09 | C/O Q1 Nanosystems (Dba Bloo Solar) | Photovoltaic microstructure and photovoltaic device implementing same |
| US20130298980A1 (en) * | 2012-05-10 | 2013-11-14 | International Business Machines Corporation | Cone-shaped holes for high efficiency thin film solar cells |
| WO2016020797A2 (en) * | 2014-08-07 | 2016-02-11 | Ecosolifer Ag. | Solar cell element and cell arrangement made from the elements |
-
2017
- 2017-01-04 GB GBGB1700080.3A patent/GB201700080D0/en not_active Ceased
- 2017-03-01 GB GB1703277.2A patent/GB2558678A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100288350A1 (en) * | 2009-05-12 | 2010-11-18 | Shih-Wei Lee | Solar cell and manufacturing method thereof |
| US20130112243A1 (en) * | 2011-11-04 | 2013-05-09 | C/O Q1 Nanosystems (Dba Bloo Solar) | Photovoltaic microstructure and photovoltaic device implementing same |
| US20130298980A1 (en) * | 2012-05-10 | 2013-11-14 | International Business Machines Corporation | Cone-shaped holes for high efficiency thin film solar cells |
| WO2016020797A2 (en) * | 2014-08-07 | 2016-02-11 | Ecosolifer Ag. | Solar cell element and cell arrangement made from the elements |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201703277D0 (en) | 2017-04-12 |
| GB201700080D0 (en) | 2017-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5178705B2 (en) | Non-planar solar unit assembly with internal spacing | |
| WO2008137140A2 (en) | Monolithic integration of nonplanar solar cells | |
| CN102763226A (en) | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors | |
| US20090272422A1 (en) | Solar Cell Design and Methods of Manufacture | |
| WO1993012543A1 (en) | Buried contact, interconnected thin film and bulk photovoltaic cells | |
| CN101017858A (en) | A back contact solar battery and its making method | |
| TW201445754A (en) | Solar cell or tandem solar cell and method of forming same | |
| US20100101624A1 (en) | Photovoltaic module and modular panel made with it to collect radiant solar energy | |
| CN101582466A (en) | Polycrystalline silicon film solar cell | |
| CN103928541A (en) | Solar cell with three-dimensional micro structural array | |
| CN201635286U (en) | Enamel solar building wall panel | |
| CN102664213A (en) | Solar cell with high photoelectric conversion efficiency and preparation method thereof | |
| WO2023077346A1 (en) | Solar module and method for producing the same | |
| CN104576822A (en) | Back contact solar cell and method for manufacturing the same | |
| WO2013058459A1 (en) | Solar cell module and preparing method of the same | |
| CN101820006A (en) | High-conversion rate silicon-based unijunction multi-laminate PIN thin-film solar cell and manufacturing method thereof | |
| Buecheler et al. | Flexible and lightweight solar modules for new concepts in building integrated photovoltaics | |
| KR101166456B1 (en) | Solar cell and method for fabricating the same | |
| KR101382898B1 (en) | See through type solar cell and fabricating method | |
| KR20110079107A (en) | Patterned glass for a thin film solar cell and fabricating method of thin film solar cell using the same | |
| GB2558678A (en) | Three-dimensional solar cells | |
| KR101062319B1 (en) | Window manufacturing method using a cell and a cassette used therein | |
| CN103137716B (en) | Solar cell, solar battery group and preparation method thereof | |
| WO2013051854A2 (en) | Solar cell and solar cell module using the same | |
| CN115425116A (en) | Manufacturing method of passivation contact structure, battery, assembly and system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |