GB2515631B - Method of fabricating diodes - Google Patents

Method of fabricating diodes

Info

Publication number
GB2515631B
GB2515631B GB1407633.5A GB201407633A GB2515631B GB 2515631 B GB2515631 B GB 2515631B GB 201407633 A GB201407633 A GB 201407633A GB 2515631 B GB2515631 B GB 2515631B
Authority
GB
United Kingdom
Prior art keywords
fabricating diodes
fabricating
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1407633.5A
Other versions
GB201407633D0 (en
GB2515631A (en
Inventor
Ke Maolong
Francis Deviny Ian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhuzhou CRRC Times Electric Co Ltd
Dynex Semiconductor Ltd
Original Assignee
Zhuzhou CRRC Times Electric Co Ltd
Dynex Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhuzhou CRRC Times Electric Co Ltd, Dynex Semiconductor Ltd filed Critical Zhuzhou CRRC Times Electric Co Ltd
Publication of GB201407633D0 publication Critical patent/GB201407633D0/en
Priority to CN201410260435.XA priority Critical patent/CN104241121A/en
Publication of GB2515631A publication Critical patent/GB2515631A/en
Application granted granted Critical
Publication of GB2515631B publication Critical patent/GB2515631B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
GB1407633.5A 2013-06-12 2014-04-30 Method of fabricating diodes Active GB2515631B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410260435.XA CN104241121A (en) 2013-06-12 2014-06-12 Method of fabricating diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1310471.6A GB201310471D0 (en) 2013-06-12 2013-06-12 Method of fabricating diodes

Publications (3)

Publication Number Publication Date
GB201407633D0 GB201407633D0 (en) 2014-06-11
GB2515631A GB2515631A (en) 2014-12-31
GB2515631B true GB2515631B (en) 2018-01-03

Family

ID=48876162

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB1310471.6A Ceased GB201310471D0 (en) 2013-06-12 2013-06-12 Method of fabricating diodes
GB1407633.5A Active GB2515631B (en) 2013-06-12 2014-04-30 Method of fabricating diodes

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB1310471.6A Ceased GB201310471D0 (en) 2013-06-12 2013-06-12 Method of fabricating diodes

Country Status (2)

Country Link
CN (1) CN104241121A (en)
GB (2) GB201310471D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105321817A (en) * 2015-10-26 2016-02-10 株洲南车时代电气股份有限公司 Diode and cathode metallization method therefor
DE102016112139B3 (en) * 2016-07-01 2018-01-04 Infineon Technologies Ag A method of reducing an impurity concentration in a semiconductor body

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482681B1 (en) * 2000-05-05 2002-11-19 International Rectifier Corporation Hydrogen implant for buffer zone of punch-through non epi IGBT
US20070108558A1 (en) * 2005-11-10 2007-05-17 Fuji Electric Device Technology Co., Ltd Semiconductor device and method of manufacturing the same
US7514750B2 (en) * 2004-09-30 2009-04-07 Infineon Technologies Ag Semiconductor device and fabrication method suitable therefor
US20100015788A1 (en) * 2007-09-10 2010-01-21 Yuichiro Sasaki Method for manufacturing semiconductor device
WO2013073623A1 (en) * 2011-11-15 2013-05-23 富士電機株式会社 Semiconductor device and method for manufacturing semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482681B1 (en) * 2000-05-05 2002-11-19 International Rectifier Corporation Hydrogen implant for buffer zone of punch-through non epi IGBT
US7514750B2 (en) * 2004-09-30 2009-04-07 Infineon Technologies Ag Semiconductor device and fabrication method suitable therefor
US20070108558A1 (en) * 2005-11-10 2007-05-17 Fuji Electric Device Technology Co., Ltd Semiconductor device and method of manufacturing the same
US20100015788A1 (en) * 2007-09-10 2010-01-21 Yuichiro Sasaki Method for manufacturing semiconductor device
WO2013073623A1 (en) * 2011-11-15 2013-05-23 富士電機株式会社 Semiconductor device and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
GB201407633D0 (en) 2014-06-11
GB2515631A (en) 2014-12-31
GB201310471D0 (en) 2013-07-24
CN104241121A (en) 2014-12-24

Similar Documents

Publication Publication Date Title
GB2520596B (en) Manufacturing method
GB201314695D0 (en) Method
GB201401248D0 (en) Method of manufacture
GB201309057D0 (en) Method
SG11201503368TA (en) Method of fabricating semiconductor devices
EP2960338A4 (en) Sugar-solution production method
GB201309928D0 (en) Method
GB201301857D0 (en) Method
GB201305231D0 (en) Method of Manufacture
GB201313249D0 (en) Method
GB201309654D0 (en) Method
GB201301233D0 (en) Method
GB201300409D0 (en) Method
EP2868476A4 (en) Printed-matter production method
GB201311385D0 (en) Method
GB201305714D0 (en) Method
GB201301094D0 (en) Method
GB2515631B (en) Method of fabricating diodes
GB201314054D0 (en) Method
GB201312609D0 (en) Method
GB201311389D0 (en) Method
GB201311291D0 (en) Method of manufacture
GB201301262D0 (en) Method of manufacture
GB201314396D0 (en) Method
GB201314332D0 (en) Method