GB201310471D0 - Method of fabricating diodes - Google Patents

Method of fabricating diodes

Info

Publication number
GB201310471D0
GB201310471D0 GBGB1310471.6A GB201310471A GB201310471D0 GB 201310471 D0 GB201310471 D0 GB 201310471D0 GB 201310471 A GB201310471 A GB 201310471A GB 201310471 D0 GB201310471 D0 GB 201310471D0
Authority
GB
United Kingdom
Prior art keywords
fabricating diodes
fabricating
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1310471.6A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhuzhou CRRC Times Electric Co Ltd
Dynex Semiconductor Ltd
Original Assignee
Dynex Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dynex Semiconductor Ltd filed Critical Dynex Semiconductor Ltd
Priority to GBGB1310471.6A priority Critical patent/GB201310471D0/en
Publication of GB201310471D0 publication Critical patent/GB201310471D0/en
Priority to GB1407633.5A priority patent/GB2515631B/en
Priority to CN201410260435.XA priority patent/CN104241121A/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
GBGB1310471.6A 2013-06-12 2013-06-12 Method of fabricating diodes Ceased GB201310471D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GBGB1310471.6A GB201310471D0 (en) 2013-06-12 2013-06-12 Method of fabricating diodes
GB1407633.5A GB2515631B (en) 2013-06-12 2014-04-30 Method of fabricating diodes
CN201410260435.XA CN104241121A (en) 2013-06-12 2014-06-12 Method of fabricating diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1310471.6A GB201310471D0 (en) 2013-06-12 2013-06-12 Method of fabricating diodes

Publications (1)

Publication Number Publication Date
GB201310471D0 true GB201310471D0 (en) 2013-07-24

Family

ID=48876162

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB1310471.6A Ceased GB201310471D0 (en) 2013-06-12 2013-06-12 Method of fabricating diodes
GB1407633.5A Active GB2515631B (en) 2013-06-12 2014-04-30 Method of fabricating diodes

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1407633.5A Active GB2515631B (en) 2013-06-12 2014-04-30 Method of fabricating diodes

Country Status (2)

Country Link
CN (1) CN104241121A (en)
GB (2) GB201310471D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105321817A (en) * 2015-10-26 2016-02-10 株洲南车时代电气股份有限公司 Diode and cathode metallization method therefor
DE102016112139B3 (en) * 2016-07-01 2018-01-04 Infineon Technologies Ag A method of reducing an impurity concentration in a semiconductor body

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482681B1 (en) * 2000-05-05 2002-11-19 International Rectifier Corporation Hydrogen implant for buffer zone of punch-through non epi IGBT
DE102004047749B4 (en) * 2004-09-30 2008-12-04 Infineon Technologies Austria Ag Semiconductor device diode and IGBT as well as suitable manufacturing process
US7728409B2 (en) * 2005-11-10 2010-06-01 Fuji Electric Device Technology Co., Ltd. Semiconductor device and method of manufacturing the same
JPWO2009034699A1 (en) * 2007-09-10 2010-12-24 パナソニック株式会社 Manufacturing method of semiconductor device
CN103890920B (en) * 2011-11-15 2017-05-31 富士电机株式会社 The manufacture method of semiconductor device and semiconductor device

Also Published As

Publication number Publication date
GB2515631B (en) 2018-01-03
CN104241121A (en) 2014-12-24
GB2515631A (en) 2014-12-31
GB201407633D0 (en) 2014-06-11

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Legal Events

Date Code Title Description
COOA Change in applicant's name or ownership of the application

Owner name: DYNEX SEMICONDUCTOR LIMITED

Free format text: FORMER OWNER: DYNEX SEMICONDUCTOR LIMITED

Owner name: ZHUZHOU CSR TIMES ELECTRIC COMPANY LIMITED

Free format text: FORMER OWNER: DYNEX SEMICONDUCTOR LIMITED

AT Applications terminated before publication under section 16(1)