GB2485486A - Selective nanotube growth inside vias using an ion beam - Google Patents

Selective nanotube growth inside vias using an ion beam Download PDF

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Publication number
GB2485486A
GB2485486A GB1119868.6A GB201119868A GB2485486A GB 2485486 A GB2485486 A GB 2485486A GB 201119868 A GB201119868 A GB 201119868A GB 2485486 A GB2485486 A GB 2485486A
Authority
GB
United Kingdom
Prior art keywords
ion beam
insulating layer
nanotube growth
growth inside
inside vias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB1119868.6A
Other versions
GB2485486B (en
GB201119868D0 (en
Inventor
Alessandro Callegari
Katherina Babich
Eugene O'sullivan
John Connolly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB201119868D0 publication Critical patent/GB201119868D0/en
Publication of GB2485486A publication Critical patent/GB2485486A/en
Application granted granted Critical
Publication of GB2485486B publication Critical patent/GB2485486B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H01L2221/1094—Conducting structures comprising nanotubes or nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer (10) on a Substrate (12), the insulating layer having a top surface (14); forming a via (18) in the insulating layer; forming an active metal layer (30) over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via.
GB1119868.6A 2009-08-28 2010-08-05 Selective nanotube growth inside vias using an ion beam Expired - Fee Related GB2485486B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/549,929 US9099537B2 (en) 2009-08-28 2009-08-28 Selective nanotube growth inside vias using an ion beam
PCT/EP2010/061403 WO2011023519A1 (en) 2009-08-28 2010-08-05 Selective nanotube growth inside vias using an ion beam

Publications (3)

Publication Number Publication Date
GB201119868D0 GB201119868D0 (en) 2011-12-28
GB2485486A true GB2485486A (en) 2012-05-16
GB2485486B GB2485486B (en) 2013-10-30

Family

ID=43034498

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1119868.6A Expired - Fee Related GB2485486B (en) 2009-08-28 2010-08-05 Selective nanotube growth inside vias using an ion beam

Country Status (7)

Country Link
US (1) US9099537B2 (en)
JP (1) JP5657001B2 (en)
CN (1) CN102484096B (en)
DE (1) DE112010003451B4 (en)
GB (1) GB2485486B (en)
TW (1) TWI474973B (en)
WO (1) WO2011023519A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI499553B (en) * 2009-09-14 2015-09-11 Univ Nat Cheng Kung Carbon nanotube and method for producing the same
JP2012186208A (en) * 2011-03-03 2012-09-27 Ulvac Japan Ltd Wiring formation method and wiring formation device
CN104103695B (en) * 2013-04-02 2017-01-25 清华大学 Film transistor and preparation method thereof
JP6039534B2 (en) 2013-11-13 2016-12-07 東京エレクトロン株式会社 Carbon nanotube generation method and wiring formation method
IL301886A (en) * 2017-03-14 2023-06-01 Magic Leap Inc Waveguides with light absorbing films and processes for forming the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040182600A1 (en) * 2003-03-20 2004-09-23 Fujitsu Limited Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof
WO2006003620A1 (en) * 2004-06-30 2006-01-12 Koninklijke Philips Electronics N.V. Method for manufacturing an electric device with a layer of conductive material contacted by nanowire
US20080317947A1 (en) * 2007-06-22 2008-12-25 Commissariat A L'energie Atomique Method for making a carbon nanotube-based electrical connection
US20080317970A1 (en) * 2007-06-22 2008-12-25 Commissariat A L'energie Atomique Method for producing an electrical connection using individually sheathed nanotubes
WO2009060556A1 (en) * 2007-11-06 2009-05-14 Panasonic Corporation Wiring structure and method for forming the same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555167A (en) 1991-08-28 1993-03-05 Nec Corp Manufacture of semiconductor device
DE60301582T2 (en) 2002-02-09 2006-06-22 Samsung Electronics Co., Ltd., Suwon Carbon nanotube storage device and method of manufacturing the storage device
DE10250829B4 (en) 2002-10-31 2006-11-02 Infineon Technologies Ag Nonvolatile memory cell, memory cell array, and method of making a nonvolatile memory cell
DE10250834A1 (en) 2002-10-31 2004-05-19 Infineon Technologies Ag Memory cell, memory cell arrangement, structuring arrangement and method for producing a memory cell
US7518247B2 (en) 2002-11-29 2009-04-14 Nec Corporation Semiconductor device and its manufacturing method
KR100982419B1 (en) 2003-05-01 2010-09-15 삼성전자주식회사 Method of forming conductive line of semiconductor device using carbon nanotube and semiconductor device manufactured by the method
US20040222082A1 (en) * 2003-05-05 2004-11-11 Applied Materials, Inc. Oblique ion milling of via metallization
KR100504701B1 (en) 2003-06-11 2005-08-02 삼성전자주식회사 Phase change memory device and method for forming the same
JP4689218B2 (en) 2003-09-12 2011-05-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP4448356B2 (en) 2004-03-26 2010-04-07 富士通株式会社 Semiconductor device and manufacturing method thereof
US20050233263A1 (en) * 2004-04-20 2005-10-20 Applied Materials, Inc. Growth of carbon nanotubes at low temperature
KR100653701B1 (en) 2004-08-20 2006-12-04 삼성전자주식회사 Method of forming a small via structure in a semiconductor device and method of fabricating phase change memory device using the same
US7129567B2 (en) 2004-08-31 2006-10-31 Micron Technology, Inc. Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements
US7233071B2 (en) 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
KR100645064B1 (en) 2005-05-23 2006-11-10 삼성전자주식회사 Metal oxide resistive ram and manufacturing method thereof
US20070148963A1 (en) 2005-12-27 2007-06-28 The Hong Kong University Of Science And Technology Semiconductor devices incorporating carbon nanotubes and composites thereof
JP4899703B2 (en) 2006-08-07 2012-03-21 富士通株式会社 Carbon wiring structure, manufacturing method thereof, and semiconductor device
KR100791948B1 (en) 2006-09-27 2008-01-04 삼성전자주식회사 Method of forming carbon nano-tube wire and method of forming wire of semiconductor device using the same
JP5181512B2 (en) 2007-03-30 2013-04-10 富士通セミコンダクター株式会社 Manufacturing method of electronic device
JP5233147B2 (en) 2007-03-30 2013-07-10 富士通セミコンダクター株式会社 Electronic device and manufacturing method thereof
KR100827524B1 (en) 2007-04-06 2008-05-06 주식회사 하이닉스반도체 Method for manufacturing semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040182600A1 (en) * 2003-03-20 2004-09-23 Fujitsu Limited Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof
WO2006003620A1 (en) * 2004-06-30 2006-01-12 Koninklijke Philips Electronics N.V. Method for manufacturing an electric device with a layer of conductive material contacted by nanowire
US20080317947A1 (en) * 2007-06-22 2008-12-25 Commissariat A L'energie Atomique Method for making a carbon nanotube-based electrical connection
US20080317970A1 (en) * 2007-06-22 2008-12-25 Commissariat A L'energie Atomique Method for producing an electrical connection using individually sheathed nanotubes
WO2009060556A1 (en) * 2007-11-06 2009-05-14 Panasonic Corporation Wiring structure and method for forming the same
US20090266590A1 (en) * 2007-11-06 2009-10-29 Panasonic Corporation Interconnect structure and method for fabricating the same

Also Published As

Publication number Publication date
WO2011023519A1 (en) 2011-03-03
DE112010003451B4 (en) 2015-01-22
DE112010003451T8 (en) 2013-01-10
TWI474973B (en) 2015-03-01
US20110048930A1 (en) 2011-03-03
CN102484096A (en) 2012-05-30
DE112010003451T5 (en) 2012-10-31
JP5657001B2 (en) 2015-01-21
CN102484096B (en) 2014-04-02
GB2485486B (en) 2013-10-30
GB201119868D0 (en) 2011-12-28
JP2013503465A (en) 2013-01-31
TW201124339A (en) 2011-07-16
US9099537B2 (en) 2015-08-04

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Effective date: 20140527

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20200618 AND 20200624

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20200805