GB2466840A - Parallel plate magnetic capacitor - Google Patents
Parallel plate magnetic capacitor Download PDFInfo
- Publication number
- GB2466840A GB2466840A GB0900432A GB0900432A GB2466840A GB 2466840 A GB2466840 A GB 2466840A GB 0900432 A GB0900432 A GB 0900432A GB 0900432 A GB0900432 A GB 0900432A GB 2466840 A GB2466840 A GB 2466840A
- Authority
- GB
- United Kingdom
- Prior art keywords
- finger
- interface
- plane
- parallel plate
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 103
- 239000003990 capacitor Substances 0.000 title claims abstract description 78
- 239000003989 dielectric material Substances 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 45
- 230000010287 polarization Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 4
- 238000004146 energy storage Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
- H01G4/385—Single unit multiple capacitors, e.g. dual capacitor in one coil
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The device includes interdigitated magnetic finger electrodes separated by dielectric material. The electrodes are magnetically polarized when electrically biased. Multiple fingers are connected together two form two parallel electrodes of a magnetic capacitor (Mcap). The interdigitated fingers increase the surface area of the capacitor compared to a parallel plate configuration. The colossal magnetic capacitance effect is also utilized to increase the storage capacity of the device or to reduce the device volume.
Description
A PARALLEL PLATE MAGNETIC CAPACITOR AND ELECTRIC ENERGY
STORAGE DEVICE
S
The present invention relates to a capacitor and an electric energy storage device. More particularly, the present invention relates to a parallel plate magnetic capacitor and an electric energy storage device.
lo Conventionally, parallel plate capacitors are structured using two conductive plates with dielectric material between the plates. The capacitance of the parallel plate capacitor can be calculated using the standard equation (1) and the electric energy corresponding to the capacitance can be calculated using the standard equation (2): (1) E=1,4CV2 (2) wherein C is the capacitance of the parallel plate capacitor, eo is the dielectric constant of free space (8.85x1 0.12), ek is the dielectric constant of the material between the parallel plates, A is the interface area of the parallel plate, r is the distance between the parallel plates, E is the electric energy, and V is the applied voltage. Equation (1) showed that the capacitance of a parallel plate capacitor is proportional to the interface area of the parallel plate. For example, please refer to Fig. 1, a cross-section view of a conventional parallel capacitor structure. The conventional parallel capacitor 100 includes an upper conductive plate 102, a bottom conductive plate 104, and a dielectric layer 106 in between the plates 102 and 104. The width of the upper conductive plate 102 is 18 units. The depth of the upper conductive plate 102 is 2 units.
Therefore, A is equal to 18x236 units2 leading to a capacitance 108 proportional to A. The structure of the parallel capacitor 100 mentioned above, one would have to increase the area of the parallel plates in order to increase the total capacitance of the parallel capacitor, assuming the e and r stays the same.
Therefore it is a trade off between capacitance and the size of the capacitor, introducing a bottleneck to increase the capacitance while keeping the size of the parallel plate capacitor the same.
is For the forgoing reasons, there is a need for a new parallel plate capacitor with a new structure to increase the capacitance while maintaining the overall volume of the capacitor.
In accordance with one embodiment, a magnetic capacitor (Mcap) is provided. The magnetic capacitor includes a first conductive magnetic metal, a second conductive magnetic metal and a dielectric material. The first conductive magnetic metal has a first upper finger located on an upper plane and a first lower finger located on a lower plane, in which the first upper finger is electrically connected to the first lower finger. The second conductive magnetic metal has a second upper finger and a second lower finger electrically connected with each other. The second upper finger is located on the upper plane such that the second upper finger is next to the first upper finger to form a first interface and on top of the first lower finger to form a second interface.
The second lower finger is located on the lower plane such that the second lower finger is next to the first lower finger to form a third interface and below the first upper finger to form a fourth interface. The dielectric material is located in the first interface, the second interface, the third interface, and the fourth interface.
In accordance with another embodiment, a magnetic capacitor (Mcap) is provided. The magnetic capacitor (Mcap) includes two first pillar electrodes, two second pillar electrodes and a dielectric layer. The two first pillar electrodes electro-connect with each other and are located at right corner of a first plane and left corner of a second plane respectively. The two second is pillar electrodes electro-connect with each other and are located at left corner of the first plane and right corner of the second plane respectively. The dielectric layer is located between the first pillar electrodes and the second pillar electrodes, such that the first pillar electrodes and the second pillar electrodes form capacitances therebetween.
It is to be understood that both the foregoing general description and the following detailed description are by examples, and are intended to provide further explanation of the invention as claimed.
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings, Fig. 1 is a cross section view of a conventional parallel plate capacitor; Fig. 2 is a cross section view of a parallel plate magnetic capacitor according to one preferred embodiment of this invention; and Fig. 3 is a top view of a parallel plate magnetic capacitor according to io one preferred embodiment of this invention.
Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are is used in the drawings and the description to refer to the same or like parts.
Please refer to Fig. 2, a cross section view of a parallel plate magnetic capacitor according to an embodiment of the present invention. The magnetic capacitor 200 includes a first conductive magnetic metal structure 202, a second conductive magnetic metal structure 204, and a dielectric layer 206.
The first conductive magnetic metal structure is composed of a first upper finger 208 and a first lower finger 210. The first upper finger 208 is located on an upper plane 212 and the first lower finger 210 is located on a lower plane 214.
The first upper finger 208 Is electrically connected to the first lower finger 210.
The connection may be via a conductive strip 216, which will be described later.
The second conductive magnetic metal structure 204 is composed of a second upper finger 218 and a second lower finger 220 electrically connected s together. The second upper finger 218 is located on the upper plane 212 such that the second upper finger 218 is next to the first upper finger 208, which the side surface 222 of the first upper finger 208 and the side surface 224 of the second upper finger 218 forms a first Interface 226. Furthermore, the second upper finger 218 Is also on top of the first lower finger 210, which the bottom surlace228ofthesecond upperfinger2l8andthetopsurface2300fthefirst lower finger 210 forms a second interface 232.
Similarly, the second lower finger 220 Is located on the lower plane 214, next to the first lower finger 210, and on below the first upper finger 208.
Therefore, the second lowerfinger22oformsathird interface 234andafourth interface 236 wlththefirst upperfinger208 and thefirst lowerfinger2lo.
The dielectric layer 206 Is located between all the interfaces. Each Interface 226, 232, 234, and 236 introduces a first capacitance 238, a second capacItance 240, a third capacitance 242, and a fourth capacitance 244, respectively. Therefore, the total capacitance introduced by the capacitor with the Interfaces 226,232, 234, and 236 is the sum of the capacitances 238,240, 242, and 244. For example, if each interface introduces 4 units of capacitance, then when a voltage difference is applied between the first conductive magnetic metal structure 202 and the second conductive magnetic metal structure 204, thetotal capacitance Introduced bythefour interfaces 226, 232,234, and 236 is 16 units.
In addition, when the first conductive magnetic metal structure 202 and the second conductive magnetic metal structure 204 are electrically biased, they would have magnetic polarization therein, in which the arrows shown in Fig. 2 indicate the magnetic polarization.
The parallel capacitor structure may be expanded further as illustrated by Fig. 2. A third upper finger 246 and a third lower finger 248 may be included in the first conductive magnetic metal structure 202 and the second conductive magnetic metal structure 204, respectively, to introduce additional capacitances 250, 252, and 254. The third upper finger 246 is located on the other side of io the second upper finger 218 opposite to the first upper finger 208. The third lower finger 248 is located below the third upper finger 246. Similarly, the magnetic capacitor 200 may be expanded further according to the same pattern, where all the fingers of the first conductive magnetic metal structure 202 are electrically connected with each other. All the fingers of the second conductive magnetic metal structure 204 are electrically connected with each other.
In order to illustrate that for the two parallel plate capacitors with the same dimension, namely capacitor 100 and capacitor 200, capacitor 200 introduces more capacitance than capacitor 100. Assuming the first upper finger 208 has a dimension of 2x2 (width=2 units, depth=2 units) and each finger in capacitor 200 has the same dimension. Therefore, the first capacitance 238 is proportional to 4 units2 and all other capacitances (capacitances 240, 242, 244... etc) have values of 4 units2. Thus in Fig. 2, assuming the distance between the fingers are also 2 units, a total of 13 4 units2 capacitances are introduced in a 18 unit wide, 2 unit deep magnetic capacitor 200. The sum of the 13 capacitances equaled to be 52 units2 of total capacitance. Compared this result with the 36 units2 of capacitance in the parallel plate capacitor 100 shown in Fig. 1, the capacitance in the magnetic capacitor 200 is almost 1.5 times the capacitance in the capacitor 100, an increase of almost 50%. Furthermore, more dielectric material is available and s the dielectric constant thereof is also increased in the order of magnitude due to the magnetic effect for energy storage since the magnetic metal structures are utilized in the proposed capacitor. As a result, the capacitance of the parallel plate magnetic capacitor can be increased due to magnetic effect or so called "Colossal Magnetic Capacitance" effect. Additionally, the capacitance of the io parallel plate magnetic capacitor can be calculated using the equation (a) as follows: -eOeke(.MCA r where ecMc is the coefficient due to Colossal Magnetic Capacitance effect Please refer to Fig. 3, a parallel plate magnetic capacitor according to one preferred embodiment of this invention. The first upper finger 208, the third upper finger 246, and the similarly configured upper fingers 256 are located on the upper plane 212. The first lower finger 210 and the similarly configured lower fingers 258 are located on the lower plane 214. The fingers of the first conductive magnetic metal structure on the upper plane 212 are electrically connected via a conductive strip 260 as previously mentioned. The fingers of the first conductive magnetic metal structure on the lower plane 214 are electrically connected via a conductive strip 216. From the top view of the magnetic capacitor in Fig. 3, notice the fingers on the upper plane 212 can be electrically connected to the fingers on the lower plane 214 via a short interconnect 262 on either ends of the first conductive magnetic metal structure 202. In addition, the arrows shown in Fig. 3 also indicate the magnetic polarization. From the above-described embodiment of the present invention, more capacitance is introduced within the same volume of materials as conventional parallel plate capacitors. Not only is the capacitance increased, less conductive material is needed since the fingers introduce capacitance with the fingers on different planes and adjacent fingers, where as the conventional parallel plate capacitors only introduces capacitance between the planes.
Thus more dielectric material is used. Therefore, the disclosed magnetic capacitor will be lighter in weight.
On the other hand, if the capacitance needed not to be increased, the volume of the capacitor can be reduced using the disclosed structure to obtain the same capacitance as a conventional parallel plate capacitor. Also, the disclosed capacitor may be expanded into multiple planes using the same is structural geometry. From the above embodiment, a structural pattern can be observed. The structural pattern includes two first pillar electrodes located at opposite corners and different planes and two second pillar electrodes located on the remaining corners of the different planes. For example, if the first electrodes are located at the right corner of a first plane and the left corner of a second plane, then the second electrodes are located at the left corner of a first plane and the right corner of the second plane. A dielectric layer is located between the electrodes to form capacitances.
According to the above-mentioned structural pattern, a third plane may be added below the second plane to expand the capacitor. On the third plane, a third pillar electrode and a fourth pillar electrode are located thereon to form additional capacitances with each other and with the electrodes in the second plane.
According to the foregoing embodiments, the semiconductor material can be surrounded with magnetic layers to obtain colossal magneto capacitance where the dielectric constant of the material goes up to i09. In addition, the magnetic capacitor can be provided to reduce weight, volume, and cost, and be a high valued capacitor.
It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.
Claims (14)
- CLAIMS: 1. A parallel plate magnetic capacitor (Mcap), comprising: a first conductive magnetic metal having a first upper finger located on an upper plane and a first lower finger located on a lower plane, the first upper finger being electrically connected to the first lower finger; a second conductive magnetic metal having a second upper finger and a second lower finger electrically connected with each other, the second upper finger being located on the upper plane such that the second upper finger is next to the first upper finger to form a first interface and on top of the first lower to finger to form a second interface, the second lower finger being located on the lower plane such that the second lower finger is next to the first lower finger to form a third interface and below the first upper finger to form a fourth interface; and a dielectric material located in the first interface, the second interface, the third interface, and the fourth interface.
- 2. The parallel plate magnetic capacitor of claim 1, wherein the first upper finger, the second upper finger, the first lower finger and the second lower finger are magnetic metal lines.
- 3. The parallel plate magnetic capacitor of claim 1, wherein the first interface, the second interface, the third interface and the fourth interface introduce a first capacitance, a second capacitance, a third capacitance and a fourth capacitance respectively when the first conductive magnetic metal and the second conductive magnetic metal are electrically biased having magnetic polarization.
- 4. The parallel plate magnetic capacitor of claim 3, wherein the first capacitance, the second capacitance, the third capacitance, and the fourth capacitance sum into a total capacitance.
- 5. The parallel plate magnetic capacitor of claim 1, wherein the first conductive magnetic metal further comprises a third upper finger electrically io connected to the first lower finger and located on the upper plane such that the third upper finger is next to the second upper finger on the opposite side of the first upper finger, whereby forming a fifth interface.
- 6. The parallel plate magnetic capacitor of claim 5, wherein the fifth is interface introduces a fifth capacitance.
- 7. The parallel plate magnetic capacitor of claim 5, the second conductive material further comprises a third lower finger electrically connected to the second upper finger and located on the lower plane such that the third lower finger is below the third upper finger to form a sixth interface.
- 8. The parallel plate magnetic capacitor of claim 7, wherein the sixth interface introduces a sixth capacitance.
- 9. A parallel plate magnetic capacitor (Mcap), comprising: two first pillar electrodes electro-connecting with each other and located at right corner of a first plane and left corner of a second plane respectively; two second pillar electrodes electro-connecting with each other and located at left corner of the first plane and right corner of the second plane respectively; and a dielectric layer located between the first pillar electrodes and the second pillar electrodes, such that the first pillar electrodes and the second pillar electrodes form capacitances therebetween.
- 10. The parallel plate magnetic capacitor of claim 9, wherein the first pillar electrodes having a first electric potential and the second pillar electrodes having a second electric potential different from the first electric potential.
- 11. The parallel plate magnetic capacitor of claim 9, wherein the first plane is on top of the second plane.
- 12. The parallel plate magnetic capacitor of claim 9, further comprising: a third pillar electrode located at a right corner of a third plane, such that the third plane is below the second plane; and a fourth pillar electrode located at a left corner of the third plane.
- 13. The parallel plate magnetic capacitor of claim 12, wherein the third pillar electrode has the first electric potential and the fourth pillar electrode has the second electric potential.
- 14. The parallel plate magnet capacitor of claIm 12, wherein the dielectric layer Is located between the third and fourth pillar electrode, the second and third electrode and the first and fourth electrode.Amendments to the claims have been filed as follows WHAT IS CLAIMED IS: 1. A parallel plate magnetic capacitor (Mcap), comprising: a first conductive magnetic metal having a first upper finger located on an upper plane and a first lower finger located on a lower plane, the first upper finger being electrically connected to the first lower finger; a second conductive magnetic metal having a second upper finger and a second lower finger electrically connected with each other, the second upper finger being located on the upper plane such that the second upper finger is next to the first upper finger to form a first interface and on top of the first lower finger to form a second interface, the second lower finger being located on the lower plane such that the second lower finger is next to the first lower finger to form a third interface and below the first upper finger to form a fourth interface; and a dielectric material located between the first conductive magnetic metal and the second conductive magnetic metal and in the first interface, the second interface, the third interface, and the fourth interface; wherein when the first conductive magnetic metal and the second conductive * a *Se.magnetic metal are electrically biased, the first conductive magnetic metal and the *aaa. * asecond conductive magnetic metal have magnetic polarizations therein, such that * S * the first conductive magnetic metal and the second conductive magnetic metal together with the dielectric material introduce magnetic capacitances.**a... * a a., a2. The parallel plate magnetic capacitor of claim, wherein the first upper finger, the second upper finger, the first lower finger and the second lower finger are magnetic metal lines.3. The parallel plate magnetic capacitor of claim 1, wherein the first interface, the second interface, the third interface and the fourth interface introduce a first capacitance, a second capacitance, a third capacitance and a fourth capacitance respectively when the first conductive magnetic metal and the second conductive magnetic metal are electrically biased having magnetic polarization.4. The parallel plate magnetic capacitor of claim 3, wherein the first capacitance, the second capacitance, the third capacitance, and the fourth capacitance sum into a total capacitance.5. The parallel plate magnetic capacitor of claim 1, wherein the first conductive magnetic metal further comprises a third upper finger electrically connected to the first lower finger and located on the upper plane such that the third upper finger is next to the second upper finger on the opposite side of the first upper finger, whereby forming a fifth interface. S.S * S S. *s6. The parallel plate magnetic capacitor of claim 5, wherein the fifth interface *S*S.. * Iintroduces a fifth capacitance. S. S* *I. SS S..S7. The parallel plate magnetic capacitor of claim 5, the second conductive magnetic metal further comprises a third lower finger electrically connected to the second upper finger and located on the lower plane such that the third lower finger is below the third upper finger to form a sixth interface.8. The parallel plate magnetic capacitor of claim 7, wherein the sixth interface introduces a sixth capacitance.9. The parallel plate magnetic capacitor of claim 7, further comprising: a conductive strip, wherein the fingers of the first conductive magnetic metal on the upper plane or on the lower plane are electrically connected via the conductive strip.10. The parallel plate magnetic capacitor of claim 9, further comprising: a short interconnect on either end of the first conductive magnetic metal, wherein the fingers of the first conductive magnetic metal on the upper plane are electrically connected to the fingers of the first conductive magnetic metal on the lower plane via the short interconnect. * . a.S* ** S.. * S* * *. * a... * S..S * S *.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0900432A GB2466840B (en) | 2009-01-12 | 2009-01-12 | A parallel plate magnetic capacitor and electric energy storage device |
US12/368,670 US20090141423A1 (en) | 2007-07-12 | 2009-02-10 | Parallel plate magnetic capacitor and electric energy storage device |
JP2010002595A JP2010161369A (en) | 2009-01-12 | 2010-01-08 | Parallel plate magnetic capacitor |
TW99100586A TW201027577A (en) | 2009-01-12 | 2010-01-11 | Parallel plate magnetic capacitor |
KR1020100002623A KR20100083106A (en) | 2009-01-12 | 2010-01-12 | A parallel plate magnetic capacitor and electric energy storage device |
FR1050173A FR2941085A1 (en) | 2009-01-12 | 2010-01-12 | PLAN MAGNETIC CAPACITOR AND DEVICE FOR STORING ELECTRIC ENERGY |
CN 201010002370 CN101777422B (en) | 2009-01-12 | 2010-01-12 | A parallel plate magnetic capacitor |
JP2012006472U JP3180779U (en) | 2009-01-12 | 2012-10-24 | Parallel plate magnetic capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0900432A GB2466840B (en) | 2009-01-12 | 2009-01-12 | A parallel plate magnetic capacitor and electric energy storage device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0900432D0 GB0900432D0 (en) | 2009-02-11 |
GB2466840A true GB2466840A (en) | 2010-07-14 |
GB2466840B GB2466840B (en) | 2011-02-23 |
Family
ID=40379451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0900432A Expired - Fee Related GB2466840B (en) | 2007-07-12 | 2009-01-12 | A parallel plate magnetic capacitor and electric energy storage device |
Country Status (6)
Country | Link |
---|---|
JP (2) | JP2010161369A (en) |
KR (1) | KR20100083106A (en) |
CN (1) | CN101777422B (en) |
FR (1) | FR2941085A1 (en) |
GB (1) | GB2466840B (en) |
TW (1) | TW201027577A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102683007A (en) * | 2011-03-07 | 2012-09-19 | 詹前疆 | Power storage element |
US20140042987A1 (en) * | 2012-08-09 | 2014-02-13 | Northern Lights Semiconductor Corp. | Lightning energy storage system |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208725A (en) * | 1992-08-19 | 1993-05-04 | Akcasu Osman E | High capacitance structure in a semiconductor device |
US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
US6570210B1 (en) * | 2000-06-19 | 2003-05-27 | Koninklijke Philips Electronics N.V. | Multilayer pillar array capacitor structure for deep sub-micron CMOS |
US6737698B1 (en) * | 2002-03-11 | 2004-05-18 | Silicon Laboratories, Inc. | Shielded capacitor structure |
US6974744B1 (en) * | 2000-09-05 | 2005-12-13 | Marvell International Ltd. | Fringing capacitor structure |
GB2445812A (en) * | 2007-01-19 | 2008-07-23 | Western Lights Semiconductor C | Apparatus to Store Electrical Energy |
GB2445811A (en) * | 2007-01-19 | 2008-07-23 | Western Lights Semiconductor C | Apparatus to Store Electrical Energy |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2700959B2 (en) * | 1991-02-25 | 1998-01-21 | 三菱電機株式会社 | Integrated circuit capacitors |
JP2000012381A (en) * | 1998-06-25 | 2000-01-14 | Toshiba Corp | Thin film capacitor |
US7342755B1 (en) * | 2005-01-26 | 2008-03-11 | Horvat Branimir L | High energy capacitor and charging procedures |
-
2009
- 2009-01-12 GB GB0900432A patent/GB2466840B/en not_active Expired - Fee Related
-
2010
- 2010-01-08 JP JP2010002595A patent/JP2010161369A/en active Pending
- 2010-01-11 TW TW99100586A patent/TW201027577A/en unknown
- 2010-01-12 KR KR1020100002623A patent/KR20100083106A/en not_active Application Discontinuation
- 2010-01-12 CN CN 201010002370 patent/CN101777422B/en not_active Expired - Fee Related
- 2010-01-12 FR FR1050173A patent/FR2941085A1/en not_active Withdrawn
-
2012
- 2012-10-24 JP JP2012006472U patent/JP3180779U/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208725A (en) * | 1992-08-19 | 1993-05-04 | Akcasu Osman E | High capacitance structure in a semiconductor device |
US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
US6570210B1 (en) * | 2000-06-19 | 2003-05-27 | Koninklijke Philips Electronics N.V. | Multilayer pillar array capacitor structure for deep sub-micron CMOS |
US6974744B1 (en) * | 2000-09-05 | 2005-12-13 | Marvell International Ltd. | Fringing capacitor structure |
US6737698B1 (en) * | 2002-03-11 | 2004-05-18 | Silicon Laboratories, Inc. | Shielded capacitor structure |
GB2445812A (en) * | 2007-01-19 | 2008-07-23 | Western Lights Semiconductor C | Apparatus to Store Electrical Energy |
GB2445811A (en) * | 2007-01-19 | 2008-07-23 | Western Lights Semiconductor C | Apparatus to Store Electrical Energy |
Also Published As
Publication number | Publication date |
---|---|
CN101777422B (en) | 2013-02-13 |
GB2466840B (en) | 2011-02-23 |
JP3180779U (en) | 2013-01-10 |
KR20100083106A (en) | 2010-07-21 |
TW201027577A (en) | 2010-07-16 |
CN101777422A (en) | 2010-07-14 |
GB0900432D0 (en) | 2009-02-11 |
FR2941085A1 (en) | 2010-07-16 |
JP2010161369A (en) | 2010-07-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20150112 |