GB2460060A - Reduced leakage current in a MEMS device - Google Patents

Reduced leakage current in a MEMS device Download PDF

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Publication number
GB2460060A
GB2460060A GB0808746A GB0808746A GB2460060A GB 2460060 A GB2460060 A GB 2460060A GB 0808746 A GB0808746 A GB 0808746A GB 0808746 A GB0808746 A GB 0808746A GB 2460060 A GB2460060 A GB 2460060A
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United Kingdom
Prior art keywords
bond pad
mems
mems device
micro
electrical
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Granted
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GB0808746A
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GB0808746D0 (en
GB2460060B (en
Inventor
Richard Ian Laming
Colin Robert Jenkins
Tsjerk Hans Hoekstra
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Cirrus Logic International UK Ltd
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Wolfson Microelectronics PLC
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Priority to GB0808746A priority Critical patent/GB2460060B/en
Priority to GB1013806A priority patent/GB2470506B/en
Publication of GB0808746D0 publication Critical patent/GB0808746D0/en
Publication of GB2460060A publication Critical patent/GB2460060A/en
Application granted granted Critical
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)

Abstract

A MEMS device (a micro-electrical-mechanical system) device comprises a first bond pad 3 provided on a surface and connected 5 to a first electrode; and a second bond pad 7 provided on the surface and connected 9 to a second electrode. The MEMS device is configured to reduce the effect of leakage current between the first bond pad and the second bond pad by placing the bond pads a greater distance apart, for example at the corners of the surface, or at opposed positions on the surface (figs 3, 4). Other configurations include placing the connecting tracks 5, 9 beneath the surface, placing barriers or trenches between or around the pads (figs 6, 7), or surface treatments (figs 8, 9).

Description

I
MEMS DEVICE AND PROCESS
Field of the invention
This invention relates to a MEMS device and process, and in particular to a MEMS device and process relating to a transducer, and in particular a capacitive microphone.
Background of the invention
Consumer electronics devices are continually getting smaller and, with advances in technology, are gaining ever increasing performance and functionality. This is clearly evident in the technology used in consumer electronic products such as mobile phones, laptop computers, MP3 players and personal digital assistants (PDAs).
Requirements of the mobile phone industry for example, are driving the components to become smaller with higher functionality and reduced cost.
Microphone devices formed using MEMS fabrication processes typically comprise one or more membranes with electrodes for read-out/drive deposited on the membranes and/or a substrate. In the case of MEMS pressure sensors and microphones, the read out is usually accomplished by measuring the capacitance between the electrodes. In the case of transducers, the device is driven, i.e. biased, by a potential difference provided across the electrodes.
Figure 1 shows a MEMS device 1 relating to a capacitive microphone as described in patent application number GB2436460 by the present applicant. A first bond pad 3 is connected via a first track 5 to a first electrode (not shown) buried within the MEMS device 1. A second bond pad 7 is connected via a second track 9 to a second electrode (not shown) buried within the MEMS device 1. The first and second electrodes may be connected, for example, to a moveable membrane and a structurally rigid back-plate, respectively. As such, movement of the membrane in relation to the rigid back-plate, i.e. in response to sound or pressure waves, causes a change of capacitance across the first and second electrodes, which results in a change of voltage across the first and second electrodes and hence between their respective bond pads 3, 7.
The first and second bond pads 3, 7 therefore provide an output signal that is used by subsequent electronic circuitry (not illustrated) for detecting the change of capacitance caused by movement of the membrane.
The output pads 3, 7 of the capacitive MEMS transducer provide a leakage path. A small leakage current between the bond pads 3, 7 and/or the tracks 5, 9 is detrimental to the operation of the subsequent electronics circuit, and therefore the overall performance of the device incorporating the MEMS device.
More specifically, since the bond pads 3, 7 and the tracks 5, 9 are exposed on the upper surface of the transducer die, a change in humidity or the presence of debris (i.e. dust particles and the like) can result in a small change of the surface resistivity and therefore a change in the leakage current. Therefore, the leakage current is effectively a noise current at the input stage of the subsequent electronics circuitry, for example a low noise amplifier (LNA), and is therefore detrimental to the signal to noise ratio (SNR) performance.
It is an aim of the present invention to provide a MEMS device, and method of fabricating a MEMS device, that reduce or eliminate the problems discussed above.
Summary of the invention
According to a first aspect of the invention, there is provided a MEMS device a micro-electrical-mechanical system (MEMS) device comprising: a first bond pad provided on a surface, the first bond connected to a first electrode; and a second bond pad provided on the surface, the second bond pad connected to a second electrode. The MEMS device is configured to reduce the effect of leakage current between the first bond pad and the second bond pad.
According to another aspect of the invention, there is provided a method of fabricating a micro-electrical-mechanical system (MEMS) device, comprising: providing a first bond pad on a surface, the first bond connected to a first electrode; and providing a second bond pad on the surface, the second bond pad connected to a second electrode; and configuring the MEMS device to reduce the effect of leakage current between the first bond pad and the second bond pad.
Brief description of the drawings
For a better understanding of the invention, and to show more clearly how it may be carried into effect, reference will now be made, by way of example only, to the accompanying drawings in which: Figure 1 shows a conventional MEMS device; Figure 2 shows a MEMS device according to a first embodiment of the present invention; Figure 3 shows a MEMS device according to a second embodiment of the present invention; Figure 4 shows a MEMS device according to a third embodiment of the present invention; Figure 5 shows a MEMS device according to a fourth embodiment of the present invention; Figure 6 shows a MEMS device according to a fifth embodiment of the present invention; Figure 7 shows a MEMS device according to a sixth embodiment of the present invention; Figure 8 shows a MEMS device according to a seventh embodiment of the present invention; and Figure 9 shows a MEMS device according to an eighth embodiment of the present invention.
Detailed description of the preferred embodiments
The description of the embodiments below will be made in relation to a MEMS device in the form of a capacitive microphone. However, it will be appreciated that the invention is applicable to any type of MEMS transducer.
Figure 2 shows a perspective view of a MEMS device according to a first embodiment of the present invention. A first bond pad 3 provided on a surface 4 of the MEMS device 1 is connected by a first track 5 to a first electrode (not shown) buried within the MEMS device 1. A second bond pad 7 provided on the surface 4 of the MEMS device 1 is connected via a second track 9 to a second electrode (not shown) buried within the MEMS device. The first and second electrodes may be connected, for example, to a moveable membrane and a structurally rigid back-plate, respectively. As such, movement of the membrane in relation to the rigid back-plate, i.e. in response to sound or pressure waves, causes a change of capacitance across the first and second electrodes, which results in a change of voltage between the bond pads 3, 7.
According to the first embodiment of the invention, the first bond pad 3 and the second bond pad 7 are positioned in respective corners of a first side of an upper surface 4 of the MEMS device 1. In other words, the first bond pad 3 and the second bond pad 7 are positioned away from each other near the periphery of the upper surface 4 of the MEMS device 1. By positioning the first bond pad 3 and the second bond pad 7 in adjacent corners of a first side of the MEMS device the leakage current between the first bond pad 3 and the second bond pad 7 is reduced, i.e. due to the increased distance between the first bond pad 3 and the second bond pad 7.
According to an alternative embodiment shown in Figure 3, the first bond pad 3 and the second bond pad 7 are positioned in diagonally opposed corners of the MEMS device.
As above, this has the advantage of reducing the leakage current between the first bond pad 3 and the second bond pad 7, i.e. due to the increased distance between the first bond pad 3 and the second bond pad 7.
Figure 4 shows a plan view of another alternative embodiment, in which the first bond pad 3 and the second bond pad 7 are positioned on opposite sides of the upper surface 4 of the MEMS device 1. As above, this has the advantage of reducing the leakage current between the first bond pad 3 and the second bond pad 7, i.e. due to the increased distance between the first bond pad 3 and the second bond pad 7.
Figure 5 shows a further embodiment of the invention, whereby the first track 5 connecting the first bond pad 3 with the first electrode and the second track 9 connecting the second bond pad 7 with the second electrode are positioned below the upper surface 4 (shown by dotted lines). In other words, the first and second tracks 5, 9 are buried within the MEMS device. Although this embodiment shows both the first and second tracks 5, 9 being buried, it is noted that the invention is also intended to embrace just one of the tracks 5, 9 being buried within the MEMS device 4, with the other track being provided on the upper surface 4.
In addition, although this aspect of the invention is described in relation to the embodiment whereby the first and second bond pads 3, 7 are positioned in respective corners of a first side on the upper surface 4 of the MEMS device 1, the concept of having one or more buried tracks 5, 9 may also be used with any of the other embodiments described herein.
According to this aspect of the invention a track 5, 9 may be connected to its respective bond pad 3, 7 by bringing the track 5, 9 to the upper surface near the vicinity of the bond pad, for example the immediate vicinity of the bond pad 3, 7, thereby reducing the length of track being provided on the upper surface 4. It will be appreciated that the track 5, 9 may be brought to the surface 4 using a well-known via" connection. In one embodiment, the via may be provided directly under the bond pad.
Figure 6 shows a MEMS device according to another aspect of the present invention.
According to this embodiment, a barrier is provided between the first bond pad 3 and the second bond pad 7. The barrier may comprise one or more trenches 60 arranged between the first bond pad 3 and the second bond pad 7. Preferably the one or more trenches 60 are arranged transverse to the line of sight between the first bond pad 3 and the second bond pad 7. These trenches 60 may be pattern-etched into the top surface (dielectric) of the transducer as part of the MEMS fabrication process by techniques known to those skilled in the art.
Alternatively, the barrier may comprise one or more walls or raised sections 60 arranged between the first bond pad 3 and the second bond pad 7. Preferably the one or more raised sections 60 are arranged transverse to the line of sight between the first bond pad 3 and the second bond pad 7. These walls or raised sections 60 may be pattern-deposited onto the top surface (dielectric) of the transducer as part of the MEMS fabrication process by techniques known to those skilled in the art.
Alternatively, the barrier may comprise one or more trenches in combination with one or more walls or raised sections 60 arranged between the first bond pad 3 and the second bond pad 7. Preferably the one or more trenches or raised sections 60 are arranged transverse to the line of sight between the first bond pad 3 and the second bond pad 7.
Each of the barriers described above in Figure 6 has the advantage of reducing the leakage current between the first bond pad 3 and the second bond pad 7. This is because the negative effect caused by humidity, moisture or debris on the resistivity between the first bond pad 3 and second bond pad 7 is reduced.
It will be appreciated that, although the barrier 60 is described in relation to the embodiment in which the first bond pad 3 and second bond pad 7 are arranged in respective corners of the MEMS device 1, the barrier 60 may be used with any configuration of the bond pads 3, 7. Furthermore, although the embodiment of Figure 6 is described in relation to the tracks 5, 9 being provided on the upper surface 4, the barrier 60 may also be used with any of the other embodiments in which one or more of the tracks 5, 9 is buried within the MEMS device 1.
Figure 7 shows a MEMS device according to another aspect of the present invention.
According to this embodiment, a barrier is provided for reducing the leakage current between the first bond pad 3 and the second bond pad 7. The barrier may comprise one or more trenches 70 arranged around the first bond pad 3 and the second bond pad 7.
Alternatively, the barrier may comprise one or more walls or raised sections 70 arranged around the first bond pad 3 and the second bond pad 7.
According to a further alternative embodiment, the barrier may comprise one or more trenches in combination with one or more walls or raised sections 70 arranged around the first bond pad 3 and the second bond pad 7.
The one or more trenches or raised sections 70 are shown are being arranged around the whole periphery of the respective bond pads 3, 7. However, the invention is also intended to embrace trenches or raised sections 70 being arranged around only a part of the respective bond pad 3, 7, i.e. not necessarily encircling the entire bond pad 3 or 7.
Furthermore, although the barrier 70 is shown as being provided around both the first and second bond pads 3, 7, the invention is equally applicable to an arrangement whereby the barrier 70 is arranged around just one of the bond pads 3, 7.
Each of the barriers described above in Figure 7 has the advantage of reducing the leakage current between the first bond pad 3 and the second bond pad 7.
It will be appreciated that although the barriers 70 are described in relation to the embodiment in which the first bond pad 3 and second bond pad 7 are arranged in respective corners of the MEMS device 1, the barriers 70 may be used with any configuration of the bond pads 3, 7. Furthermore, although the embodiment of Figure 7 is described in relation to the tracks 5, 9 being provided on the upper surface 4, the barrier 70 may also be used with any of the other embodiments in which one or more of the tracks 5, 9 is buried within the MEMS device 1.
Figure 8 shows a MEMS device according to another aspect of the present invention.
According to this embodiment, a hydrophobic surface 80 is provided in an area between the first bond pad 3 and the second bond pad 7. Preferably the hydrophobic surface comprises a plasma deposition. For example, the plasma deposition may comprise a CF4 plasma of fluorine polymer films containing hydrophobic CF2 and/or CF3 groups.
The hydrophobic surface 80 has the advantage of reducing the leakage current between the first bond pad 3 and the second bond pad 7. It will be appreciated that the hydrophobic surface 80 may be configured using a number of patterns, such as lines or dots, etc, or indeed may be configured as a continuous surface structure. Furthermore, the hydrophobic surface 80 may be used in conjunction with the trenches and barriers previously described.
It will be appreciated that although the hydrophobic surface 80 is described in relation to the embodiment in which the first bond pad 3 and second bond pad 7 are arranged in respective corners of the MEMS device 1, the hydrophobic surface 80 may be used with any configuration of the bond pads 3, 7. Furthermore, although the embodiment of Figure 8 is described in relation to the tracks 5, 9 being provided on the upper surface 4 of the MEMS device 1, the hydrophobic surface 80 may also be used with any of the
B
other embodiments in which one or more of the tracks 5, 9 is buried within the MEMS device 1.
In a further embodiment, a hydrophilic layer (not shown) may be provided on a region of the MEMS device that is far from the bond pads 3, 7 and the tracks 5, 9. This has the advantage of attracting moisture, etc, away from the pads and tracks. It will be apparent to those skilled in the art that the hydrophilic layer may be used in conjunction with any of the other embodiments described herein.
In an alternative embodiment, a hydrophobic surface may be provided on the package level. That is, the MEMS device 1 may be located inside a package as is generally standard practice in the electronics industry. A hydrophobic surface may be provided on the package to prevent moisture from entering the package.
Figure 9 shows another aspect of the present invention, in which a coating layer 90 is provided on the upper surface 4 of the MEMS device. The coating layer 90 may be provided over a portion of the surface 4 (as shown), or over the entire surface.
Preferably, the coating layer 90 is provided over a portion of the upper surface 4 which includes the first and second bond pads 3, 7 and an area between the first and second bond pads 3, 7. The coating layer 90 has the advantage of protecting the bond pads 3, 7 from humidity and other moisture, thereby reducing the leakage current between the first bond pad 3 and the second bond pad 7. In one embodiment, the coating layer 90 may comprise a hydrophilic substance.
According to yet another aspect of the invention, the effect of leakage current is reduced by burying the first bond pad 3 and the second bond pad 7 within the MEMS device 1. According to this embodiment the electronic circuitry for processing the signal from the first bond pad 3 and the second bond pad 7 is also buried within the MEMS device. This has the advantage of reducing the effect of leakage current between the first bond pad 3 and the second bond pad 7.
The various embodiments described above all have the advantage of reducing the effect of leakage current between the first bond pad and second bond pad.
It is noted that the invention may be used in a number of applications. These include, but are not limited to, consumer applications, medical applications, industrial applications and automotive applications. For example, typical consumer applications include laptops, mobile phones, PDAs and personal computers. Typical medical applications include hearing aids. Typical industrial applications include active noise cancellation. Typical automotive applications include hands-free sets, acoustic crash sensors and active noise cancellation.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design many alternative embodiments without departing from the scope of the appended claims. The word "comprising" does not exclude the presence of elements or steps other than those listed in a claim, "a" or "an" does not exclude a plurality, and a single feature or other unit may fulfil the functions of several units recited in the claims. Any reference signs in the claims shall not be construed so as to limit their scope.

Claims (30)

  1. CLAIMS1. A micro-electrical-mechanical system (MEMS) device comprising: a first bond pad provided on a surface, the first bond pad connected to a first electrode; and a second bond pad provided on the surface, the second bond pad connected to a second electrode; wherein the MEMS device is configured to reduce the effect of leakage current between the first bond pad and the second bond pad.
  2. 2. A MEMS device as claimed in claim 1, wherein the first bond pad and the second bond pad are positioned in respective corners of a first side of the MEMS device.
  3. 3. A MEMS device as claimed in claim 1, where in the first bond pad and the second bond pad are positioned in diagonally opposed corners of the MEMS device.
  4. 4. A MEMS device as claimed in claim 1, wherein the first bond pad and the second bond pad are positioned on opposite sides of the surface of the MEMS device.
  5. 5. A MEMS device as claimed in any one of the preceding claims, further comprising a first track for connecting the first bond pad to the first electrode and a second track for connecting the second bond pad to the second electrode, wherein at least one of the first track or second track is positioned below the surface.
  6. 6. A MEMS device as claimed in claim 5, wherein the at least one of the first track or second track is connected to the respective bond pad using a via positioned near the respective bond pad.
  7. 7. A MEMS device as claimed in any one of the preceding claims, further comprising one or more barriers being provided between the first bond pad and the second bond pad.
  8. 8. A MEMS device as claimed in claim 7, wherein each of the one or barriers comprises a trench.
  9. 9. A MEMS device as claimed in claim 7, wherein each of the one or more barriers comprises a raised section.
  10. 10. A MEMS device as claimed in claim 7, wherein a first barrier comprises a trench and a second barrier comprises a raised section.
  11. 11. A MEMS device as claimed in any one of claims 7 to 10, wherein the one or more barriers are arranged substantially transverse to a line of sight between the first bond pad and the second bond pad.
  12. 12. A MEMS device as claimed in any one of claims 7 to 10, wherein the one or more barriers are arranged around the first and/or the second bond pad.
  13. 13. A MEMS device as claimed in any one of claims 1 to 6, further comprising a hydrophobic surface being provided in an area between the first bond pad and the second bond pad.
  14. 14. A MEMS device as claimed in claim 13, wherein the hydrophobic surface comprises a plasma deposition.
  15. 15. A MEMS device as claimed in claim 14, wherein the plasma deposition comprises a CF4 plasma of fluorine polymer films containing hydrophobic CF2 and/or CF3 groups.
  16. 16. A MEMS device as claimed in any one of the preceding claims, wherein the surface is an upper surface.
  17. 17. A MEMS device as claimed in claim 16, further comprising a coating layer being provided over a portion of the upper surface.
  18. 18. A MEMS device as claimed in claim 16, wherein the portion of the upper surface includes an area comprising the first bond pad, the second bond pad and an area therebetween.
  19. 19. A MEMS device as claimed in any one of claims ito 15, wherein the first bond pad and the second bond pad are buried within the MEMS device.
  20. 20. A MEMS device as claimed in claim 19, further comprising electronic processing circuitry buried within the MEMS device.
  21. 21. A MEMS device as claimed in any one of the preceding claims, wherein the MEMS device is a MEMS capacitive microphone.
  22. 22. An electronic device comprising a micro-electrical-mechanical system (MEMS) device as claimed in any one of claims 1 to 21.
  23. 23. A communications device comprising a micro-electrical-mechanical system (MEMS) device as claimed in any one of claims 1 to 21.
  24. 24. A portable telephone device comprising a micro-electrical-mechanical system (MEMS) device as claimed in any one of claims 1 to 21.
  25. 25. An audio device comprising a micro-electrical-mechanical system (MEMS) device as claimed in any one of claims 1 to 21.
  26. 26. A computer device comprising a micro-electrical-mechanical system (MEMS) device as claimed in any one of claims 1 to 21.
  27. 27. A vehicle comprising a micro-electrical-mechanical system (MEMS) device as claimed in any one of claims 1 to 21.
  28. 28. A medical device comprising a micro-electrical-mechanical system (MEMS) device as claimed in any one of claims 1 to 21.
  29. 29. An industrial device comprising a micro-electrical-mechanical system (MEMS) device as claimed in any one of claims 1 to 21.
  30. 30. A method of fabricating a micro-electrical-mechanical system (MEMS) device, comprising: providing a first bond pad on a surface, the first bond connected to a first electrode; providing a second bond pad on the surface, the second bond pad connected to a second electrode; and configuring the MEMS device to reduce the effect of leakage current between the first bond pad and the second bond pad.
GB0808746A 2008-05-14 2008-05-14 MEMS device and process Active GB2460060B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0808746A GB2460060B (en) 2008-05-14 2008-05-14 MEMS device and process
GB1013806A GB2470506B (en) 2008-05-14 2008-05-14 Mems device and process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0808746A GB2460060B (en) 2008-05-14 2008-05-14 MEMS device and process

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GB0808746D0 GB0808746D0 (en) 2008-06-18
GB2460060A true GB2460060A (en) 2009-11-18
GB2460060B GB2460060B (en) 2010-10-27

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007143058A2 (en) * 2006-06-04 2007-12-13 Robert Bosch Gmbh Methods for trapping charge in a microelectromechanical system and microelectromechanical system employing same
WO2007143129A2 (en) * 2006-06-04 2007-12-13 Robert Bosch Gmbh Microelectromechanical systems having stored charge and methods for fabricating and using same
EP1916222A2 (en) * 2006-10-24 2008-04-30 Seiko Epson Corporation MEMS device with reduced parasitic capacitance

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007143058A2 (en) * 2006-06-04 2007-12-13 Robert Bosch Gmbh Methods for trapping charge in a microelectromechanical system and microelectromechanical system employing same
WO2007143129A2 (en) * 2006-06-04 2007-12-13 Robert Bosch Gmbh Microelectromechanical systems having stored charge and methods for fabricating and using same
EP1916222A2 (en) * 2006-10-24 2008-04-30 Seiko Epson Corporation MEMS device with reduced parasitic capacitance

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GB0808746D0 (en) 2008-06-18
GB2460060B (en) 2010-10-27

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