GB2442400B - A semiconductor device including a vertical decoupling capacitor - Google Patents

A semiconductor device including a vertical decoupling capacitor

Info

Publication number
GB2442400B
GB2442400B GB0800919A GB0800919A GB2442400B GB 2442400 B GB2442400 B GB 2442400B GB 0800919 A GB0800919 A GB 0800919A GB 0800919 A GB0800919 A GB 0800919A GB 2442400 B GB2442400 B GB 2442400B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
device including
decoupling capacitor
vertical decoupling
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0800919A
Other versions
GB2442400A (en
GB0800919D0 (en
Inventor
Matthias Lehr
Kai Frohberg
Christoph Schwan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Advanced Micro Devices Inc
Original Assignee
GlobalFoundries Inc
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102005030585A external-priority patent/DE102005030585B4/en
Application filed by GlobalFoundries Inc, Advanced Micro Devices Inc filed Critical GlobalFoundries Inc
Publication of GB0800919D0 publication Critical patent/GB0800919D0/en
Publication of GB2442400A publication Critical patent/GB2442400A/en
Application granted granted Critical
Publication of GB2442400B publication Critical patent/GB2442400B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB0800919A 2005-06-30 2006-05-23 A semiconductor device including a vertical decoupling capacitor Expired - Fee Related GB2442400B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005030585A DE102005030585B4 (en) 2005-06-30 2005-06-30 Semiconductor device with a vertical decoupling capacitor and method for its production
US11/379,605 US7713815B2 (en) 2005-06-30 2006-04-21 Semiconductor device including a vertical decoupling capacitor
PCT/US2006/019960 WO2007005141A1 (en) 2005-06-30 2006-05-23 A semiconductor device including a vertical decoupling capacitor

Publications (3)

Publication Number Publication Date
GB0800919D0 GB0800919D0 (en) 2008-02-27
GB2442400A GB2442400A (en) 2008-04-02
GB2442400B true GB2442400B (en) 2010-09-29

Family

ID=38043075

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0800919A Expired - Fee Related GB2442400B (en) 2005-06-30 2006-05-23 A semiconductor device including a vertical decoupling capacitor

Country Status (3)

Country Link
KR (1) KR101464710B1 (en)
GB (1) GB2442400B (en)
WO (1) WO2007005141A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007009383A1 (en) 2007-02-20 2008-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Semiconductor arrangement and method for its production
US7943473B2 (en) * 2009-01-13 2011-05-17 Maxim Integrated Products, Inc. Minimum cost method for forming high density passive capacitors for replacement of discrete board capacitors using a minimum cost 3D wafer-to-wafer modular integration scheme
CN103094068B (en) * 2011-10-31 2015-11-18 成都锐华光电技术有限责任公司 High density embedded capacitor and preparation method thereof
KR102193685B1 (en) 2014-05-02 2020-12-21 삼성전자주식회사 Vertical structure non-volatile memory device
KR20190017558A (en) 2017-08-11 2019-02-20 삼성전자주식회사 Capacitor structure and semiconductor device having the same
FR3076660B1 (en) * 2018-01-09 2020-02-07 Stmicroelectronics (Rousset) Sas INTEGRATED CAPACITIVE FILLING CELL DEVICE AND MANUFACTURING METHOD THEREOF
FR3077425A1 (en) * 2018-01-30 2019-08-02 Stmicroelectronics (Rousset) Sas PRECARACTERIZED INTEGRATED CELL

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5770875A (en) * 1996-09-16 1998-06-23 International Business Machines Corporation Large value capacitor for SOI
US6111804A (en) * 1997-12-01 2000-08-29 Intel Corporation Methods for reducing the effects of power supply distribution related noise
US20020066916A1 (en) * 2000-12-05 2002-06-06 Hsu Louis L. Forming electronic structures having dual dielectric thicknesses and the structure so formed
US20020172070A1 (en) * 2001-05-21 2002-11-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US20030017667A1 (en) * 2001-05-31 2003-01-23 Samsung Electronics Co., Ltd. Semiconductor memory device having capacitor and method of forming the same
US20040016944A1 (en) * 2001-05-11 2004-01-29 Ahn Kie Y. Integrated decoupling capacitors
US20040092073A1 (en) * 2002-11-08 2004-05-13 Cyril Cabral Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
US20040195621A1 (en) * 2003-04-03 2004-10-07 International Business Machines Corporation On chip decap trench capacitor (dtc) for ultra high performance silicon on insulator (soi) systems microprocessors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02216862A (en) * 1989-02-17 1990-08-29 Nec Corp Semiconductor device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5770875A (en) * 1996-09-16 1998-06-23 International Business Machines Corporation Large value capacitor for SOI
US6111804A (en) * 1997-12-01 2000-08-29 Intel Corporation Methods for reducing the effects of power supply distribution related noise
US20020066916A1 (en) * 2000-12-05 2002-06-06 Hsu Louis L. Forming electronic structures having dual dielectric thicknesses and the structure so formed
US20040016944A1 (en) * 2001-05-11 2004-01-29 Ahn Kie Y. Integrated decoupling capacitors
US20020172070A1 (en) * 2001-05-21 2002-11-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US20030017667A1 (en) * 2001-05-31 2003-01-23 Samsung Electronics Co., Ltd. Semiconductor memory device having capacitor and method of forming the same
US20040092073A1 (en) * 2002-11-08 2004-05-13 Cyril Cabral Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
US20040195621A1 (en) * 2003-04-03 2004-10-07 International Business Machines Corporation On chip decap trench capacitor (dtc) for ultra high performance silicon on insulator (soi) systems microprocessors

Also Published As

Publication number Publication date
WO2007005141A1 (en) 2007-01-11
KR20080025191A (en) 2008-03-19
GB2442400A (en) 2008-04-02
KR101464710B1 (en) 2014-11-24
GB0800919D0 (en) 2008-02-27

Similar Documents

Publication Publication Date Title
TWI320596B (en) Semiconductor device
EP1927138A4 (en) Semiconductor device
EP1953824A4 (en) Semiconductor device
TWI315569B (en) Wafer level package including a device wafer integrated with a passive component
EP1749308A4 (en) Vertical structure semiconductor devices
EP1970955A4 (en) Semiconductor module
EP1834127A4 (en) Vibration device
EP1831920A4 (en) Wafer bonded mos decoupling capacitor
EP1886377A4 (en) Semiconductor device
EP1938376A4 (en) Semiconductor device
EP1906440A4 (en) Semiconductor device
TWI368992B (en) Vertical semiconductor device
GB0612926D0 (en) A semiconductor device
EP1976017A4 (en) Semiconductor device
SG116579A1 (en) Decoupling capacitor design.
EP2183832A4 (en) Low capacitance semiconductor device
EP1959492A4 (en) Semiconductor device
EP2232512A4 (en) Chip capacitor
GB2442400B (en) A semiconductor device including a vertical decoupling capacitor
EP1886261A4 (en) Semiconductor device
EP1909330A4 (en) Semiconductor device
EP1886355A4 (en) Semiconductor device
EP1909299A4 (en) Capacitor
GB0614495D0 (en) A semiconductor device
GB2426127B (en) Vibration device

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20091210 AND 20091216

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20120523