GB2419895B - Shielding design for backside metal deposition - Google Patents

Shielding design for backside metal deposition

Info

Publication number
GB2419895B
GB2419895B GB0521968A GB0521968A GB2419895B GB 2419895 B GB2419895 B GB 2419895B GB 0521968 A GB0521968 A GB 0521968A GB 0521968 A GB0521968 A GB 0521968A GB 2419895 B GB2419895 B GB 2419895B
Authority
GB
United Kingdom
Prior art keywords
metal deposition
backside metal
shielding design
shielding
design
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB0521968A
Other versions
GB2419895A (en
GB0521968D0 (en
Inventor
Clive Luca Widdicks
Paul Rich
Ian Moncrieff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trikon Technologies Ltd
Aviza Europe Ltd
SPP Process Technology Systems UK Ltd
Original Assignee
Trikon Technologies Ltd
Aviza Europe Ltd
SPP Process Technology Systems UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trikon Technologies Ltd, Aviza Europe Ltd, SPP Process Technology Systems UK Ltd filed Critical Trikon Technologies Ltd
Publication of GB0521968D0 publication Critical patent/GB0521968D0/en
Publication of GB2419895A publication Critical patent/GB2419895A/en
Application granted granted Critical
Publication of GB2419895B publication Critical patent/GB2419895B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB0521968A 2004-11-04 2005-10-28 Shielding design for backside metal deposition Active GB2419895B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0424371A GB0424371D0 (en) 2004-11-04 2004-11-04 Shielding design for backside metal deposition

Publications (3)

Publication Number Publication Date
GB0521968D0 GB0521968D0 (en) 2005-12-07
GB2419895A GB2419895A (en) 2006-05-10
GB2419895B true GB2419895B (en) 2010-09-22

Family

ID=33523157

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0424371A Ceased GB0424371D0 (en) 2004-11-04 2004-11-04 Shielding design for backside metal deposition
GB0521968A Active GB2419895B (en) 2004-11-04 2005-10-28 Shielding design for backside metal deposition

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB0424371A Ceased GB0424371D0 (en) 2004-11-04 2004-11-04 Shielding design for backside metal deposition

Country Status (2)

Country Link
DE (1) DE102005052027A1 (en)
GB (2) GB0424371D0 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9194038B2 (en) * 2009-12-28 2015-11-24 Canon Anelva Corporation Thin film forming apparatus, thin film forming method, and shield component

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0553691A1 (en) * 1992-01-22 1993-08-04 Applied Materials, Inc. Passive shield for CVD wafer processing which prevents frontside edge and backside deposition
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
US5411624A (en) * 1991-07-23 1995-05-02 Tokyo Electron Limited Magnetron plasma processing apparatus
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
US5942042A (en) * 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
GB2350374A (en) * 1999-05-11 2000-11-29 Trikon Holdings Ltd Deposition apparatus
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6306244B1 (en) * 1996-09-30 2001-10-23 Lam Research Corporation Apparatus for reducing polymer deposition on substrate support
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US20020066531A1 (en) * 1996-11-29 2002-06-06 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US20040083975A1 (en) * 2002-09-20 2004-05-06 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411624A (en) * 1991-07-23 1995-05-02 Tokyo Electron Limited Magnetron plasma processing apparatus
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
EP0553691A1 (en) * 1992-01-22 1993-08-04 Applied Materials, Inc. Passive shield for CVD wafer processing which prevents frontside edge and backside deposition
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
US6306244B1 (en) * 1996-09-30 2001-10-23 Lam Research Corporation Apparatus for reducing polymer deposition on substrate support
US20020066531A1 (en) * 1996-11-29 2002-06-06 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US5942042A (en) * 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
GB2350374A (en) * 1999-05-11 2000-11-29 Trikon Holdings Ltd Deposition apparatus
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US20040083975A1 (en) * 2002-09-20 2004-05-06 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9194038B2 (en) * 2009-12-28 2015-11-24 Canon Anelva Corporation Thin film forming apparatus, thin film forming method, and shield component

Also Published As

Publication number Publication date
GB0424371D0 (en) 2004-12-08
GB2419895A (en) 2006-05-10
GB0521968D0 (en) 2005-12-07
DE102005052027A1 (en) 2006-05-24

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20150716 AND 20150722