GB2419463A - Heat sink - Google Patents
Heat sink Download PDFInfo
- Publication number
- GB2419463A GB2419463A GB0423678A GB0423678A GB2419463A GB 2419463 A GB2419463 A GB 2419463A GB 0423678 A GB0423678 A GB 0423678A GB 0423678 A GB0423678 A GB 0423678A GB 2419463 A GB2419463 A GB 2419463A
- Authority
- GB
- United Kingdom
- Prior art keywords
- heat sink
- chambers
- heat
- sink according
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000002826 coolant Substances 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 239000012530 fluid Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 abstract description 7
- 238000001816 cooling Methods 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000003570 air Substances 0.000 description 13
- 239000000843 powder Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000005670 electromagnetic radiation Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000000919 ceramic Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- IUWCPXJTIPQGTE-UHFFFAOYSA-N chromium cobalt Chemical compound [Cr].[Co].[Co].[Co] IUWCPXJTIPQGTE-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/003—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by using permeable mass, perforated or porous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
A heat sink for a semiconductor device is disclosed. The heat sink comprises a body of a heat-conducting material, which includes a three-dimensional array of interconnected chambers arranged so that fluid may pass through the body via the chambers. The body further includes a channel for a cooling medium, the channel passing through, but being closed off from, the array of interconnected chambers. The heat sink may be used, for example, in a liquid cooling system for a microprocessor.
Description
Heat Sink The present invention relates to a heat sink. Preferred examples
relate to a heat sink for a semiconductor chip such as an integrated circuit, logic device, memory chip or microprocessor.
Modern microprocessors and other semiconductor devices are becoming increasingly complex. The greater complexity of such devices leads to increased heat generation, creating a need for efficient cooling solutions.
Complex microprocessors can also generate substantial electromagnetic radiation which can interfere with nearby equipment, so that some form of electromagnetic shielding may also be needed.
Cooling arrangements for modern processors used in personal computers (PCs) often include a heat sink mounted on top of the processor and consisting of a series of parallel metal fins on a metal base which is attached to the top surface of the processor chip, often by way of a heat conducting intermediary such as a thin layer of thermal paste. Furthermore, a fan is often provided fixed to the top of the heat sink for providing a flow of air through the fins of the heat sink.
As the complexity of processors increases, the size of the heat sink needed also increases, which can be a problem particularly in small form factor PC cases and laptop computers. This problem is exacerbated where in addition to the cooling system some form of electromagnetic shielding is also required to reduce the amount of electromagnetic radiation escaping the computer.
The present invention seeks to alleviate some of these problems.
Accordingly, in a first aspect of the invention, there is provided a heat sink for a semiconductor device, comprising a body of a heat-conducting material, the body comprising a three-dimensional array of interconnected chambers arranged so that fluid may pass through the body via the chambers.
In this way, a heat sink with a greater surface area exposed to a cooling fluid, such as air, can be provided, and cooling efficiency can thereby be improved.
The array of interconnected chambers is preferably a regular array.
The chambers are preferably regularly spaced and preferably of substantially - 2 equal size. The body preferably comprises at least 100 chambers, more preferably at least 500 chambers, more preferably at least 1000 chambers. In some examples, the body may comprise 2000 or more chambers. Preferably, the array of chambers comprises multiple aligned chambers in at least two, S and preferably in each, of its three dimensions. The outermost chambers are preferably open to the exterior of the heat sink.
Preferred features of the present invention will now be described, purely by way of example, with reference to the accompanying drawings, in which: Figure 1 is a schematic illustration of a conventional heat sink arrangement; Figure 2 is a schematic illustration of a heat sink arrangement in accordance with an embodiment of the present invention; Figures 3A to 3G show examples of structures for use in the heat sink; Figure 4 is a schematic illustration of an alternative heat sink arrangement; Figure 5 is a cross-sectional schematic illustration of a heat sink having a channel for liquid coolant; and Figure 6 is a schematic of a device for use in a selective laser remelting process.
A conventional heat sink arrangement is shown schematically in Figure 1. A microprocessor 10 is mounted on a circuit board 12. A heat sink 14 consisting of parallel fins is attached to the top of the processor. Between the processor 10 and the heat sink 14, a layer of heat-conducting material 18, such as thermal paste, is provided.
A fan 16 is fixed to the top of the heat sink 14. The heat sink and fan are held in place by clips (not shown), and the fan is connected to the circuit board 12 for the supply of power.
Figure 2 schematically illustrates a heat sink arrangement according to an embodiment of the present invention.
Here, the conventional heat sink is replaced by a heat sink 20 having a body of a fine three-dimensional lattice or mesh structure. The mesh or lattice structure consists of interconnected metal strands of a material having good thermal properties, such as bismuth or copper, which form a plurality of small - 3 interconnected chambers. The chambers may, for example, be octahedral or diamond-shaped. The interconnected chambers allow cooling fluid, such as air, to pass through the heat sink via the chambers. To increase the volume of air that can pass through the heat sink, the chambers may be arranged to S provide straight-line paths through the heat sink in one or more directions.
Figures 3A to 3G show examples of structures for use in the heat sink.
These are meant to illustrate only the structure itself and not its shape or dimensions.
Figure 3A shows a structure having diamond-shaped chambers.
Figures 3B, 3C and 3D respectively show top, front and side views of the structure of Figure 3A.
Figures BE and 3F show perspective views of a similar but slightly denser structure, and Figure 3G shows a cross-section through such a structure.
The shape and size of the heat sink is determined by the heat output from the device and the size of the device.
As an example, the heat sink may have diamond-shaped chamber structures having lattice sides of between 1mm and 2mm length, for example 1.5mm length, with the metal strands forming the chambers having a thickness of 0.2mm; and the lattice may consist of 20 (width) by 20 (depth) by (height) individual chamber structures.
Optionally, the heat sink body having a lattice or mesh structure may be provided on a solid base, such as a copper plate. Alternatively, a number of separate solid metal pads may be provided at the base of the heat sink corresponding to the areas of the chip where larger amounts of heat are generated.
A fan 16 is optionally provided attached to the top of the heat sink to draw air through the heat sink. Because the mesh or lattice structure is open to all sides, air is drawn through the heat sink from all directions, which can increase the efficiency of the heat sink. In the conventional heat sink consisting of parallel fins (as shown in Figure 1), air can only pass through the heat sink in a direction parallel to the fins (that is to say, into and out of the page).
Heat is conducted from the processor into the metal structure of the heat sink, optionally via an intermediary layer such as thermal paste. The heat is then transferred to the air passing through the chambers (either by way of forced air flow, typically using a fan, or by convection). Due to its lattice or mesh structure, the heat-conducting metal of the heat sink has a comparatively large surface area exposed to the air. This can improve heat transfer to the air.
Figure 4 shows a heat sink arrangement according to an alternative embodiment of the present invention. Here, the base of the heat sink 30 extends beyond the chip 10, and includes a recess 32 for accommodating the chip. In this way, the chip is entirely encased by the heat sink. A heatconducting plane may additionally be provided as a lower layer in the circuit board (for example in the form of a thermal plane or ground plane) , in which case the heat sink 30 may at specific locations be in contact with the heat conducting plane, for example by way of protrusions extending through apertures in the top layer of the circuit board. This may further aid heat dissipation. A fan may be provided as described above.
The microprocessor itself may comprise heat-conducting terminals connected to thermal planes within the processor, in which case the heat sink may be connected directly to those heat terminals, which are preferably provided on the top surface of the processor.
Heat sinks with the mesh / lattice structure described above may further serve as electromagnetic radiation shields to reduce the amount of radiation escaping the processor. The metal structures in the heat sink serve as wave-guides or attenuators for electromagnetic radiation emitted by the processor. A heat sink as shown in Figure 4 may provide improved shielding since it completely encases the processor chip, thereby reducing radiation escaping towards the sides of the chip.
The heat sink as described therefore provides a combined heat dispersion and radiation shielding device. Combining the two functions in a single device can provide cost, weight and space savings. The latter can be particularly important in small-form factor PCs, laptops or other small devices.
To ensure a sufficient volume of heat-conductive material (typically metal) is present in the heat sink to dissipate the heat generated by the - 5 processor 10, it is preferable to provide a very fine lattice or mesh having a small chamber size.
A structure with the required properties may be created using a technique known as selective laser remelting. This technique is similar to stereolithography methods using laser-hardening of liquid resins in that the structure is built up layer-wise. This is achieved by selectively remelting portions of a layer of fine metal powder using a laser. The process is illustrated in Figure 6.
The process uses a laser remelting device 70 comprising a building chamber 72 filled with an inert gas, in which a three-dimensional structure 92 is built up on a moveable platform 74. The device comprises a laser 82, and a scanner 84 for directing laser beam 86 through laser window 88 onto a central area 94 of the building chamber 72. The scanner 84 moves the laser beam across area 94 in two dimensions.
In use, a quantity of metal powder 90 is added to the building chamber 72. Levelling mechanism 76 ensures that a level layer of metal powder is provided over the central area 94 above moveable platform 74. The laser then traces a shape in the layer of powder corresponding to a layer of the structure being built, thereby melting portions of the powder. The melted portions then cool and solidify. A solid layer of the structure is thereby produced. The moveable platform 74 is then lowered, and a new layer of powder is applied to central area 94, from which the next layer of the structure is then made.
The above-described process is suitable for producing intricate metal structures of the kind used in the heat sinks described herein. The metal structures generated are essentially homogeneous, which can help ensure that the thermal properties of the metal being used are maintained. The structures produced also tend to be strong and durable.
The process can essentially form any lattice or matrix shape. Solid shapes can also be formed within the lattice structure.
Many different type of metals and ceramic composites can be used in this process. For the heat sink, materials with good thermal and radiation shielding properties are used, for example copper, bismuth, stainless steel, zinc, bronze, titanium, chromium-cobalt, or aluminium. These are provided as powders of nano-particle size. - 6
The process allows for the mixing of different materials. Ceramic materials may also be sintered onto the structure.
A mixture of metals, for example copper and bismuth, may be selected to obtain the required heat extraction and shielding properties. Typically, the S majority of the material used will be one having high thermal conductivity to ensure adequate operation as a heat sink. For example, the heat sink may mainly consist of copper, which is cheap and has good thermal properties. A small amount of another material, such as steel, may then be included to improve the heat sink's wave guide properties.
In further embodiments of the invention, channels may be provided in the heat sink for a cooling medium, such as liquid (for example water) or gas (for example air, helium or argon). By way of example, Figure 5 shows schematically a cross section of a liquid-cooled heat sink 44. The heat sink has a body of a metal lattice or mesh structure as described above.
IS Additionally, a channel 46 is provided for a liquid coolant (such as water). The serpentine configuration of the channel increases the heat exchange between the heat sink and the liquid coolant. Although a channel with a two- dimensional path is shown, a more complicated, three-dimensional path may also be provided. Multiple independent or branching channels may also be provided. The heat sink further comprises connecting ports 50 and 52 for connection to a liquid cooling system.
The channel may be formed by closing off selected chambers of the lattice, though this may produce a somewhat angularly shaped channel.
Alternatively, a smooth channel surface may be provided. Additionally, for improved flow, the interior of the channels is preferably hollow.
Structures of this kind may be manufactured using the selective laser remelting process described above. A fan may be provided as described above to produce an air flow through the lattice portion of the heat sink.
It will be understood that the present invention has been described above purely by way of example, and modification of detail can be made within the scope of the invention.
For example, rather than providing the heat sink separately for attachment to the chip, the chip package and heat sink may be integrally formed.
Claims (11)
1. A heat sink for a semiconductor device, comprising a body of a heatconducting material, the body comprising a three-dimensional array of interconnected chambers arranged so that fluid may pass through the body via the chambers.
2. A heat sink according to Claim 1, wherein the heat-conducting material of the body is substantially homogenous.
3. A heat sink according to Claim 1 or 2, wherein the chambers are arranged to provide straight-line paths through the body in one or more directions.
4. A heat sink according to any of the preceding claims, wherein the body is made by a selective laser remelting process.
5. A heat sink according to any of the preceding claims, wherein the chambers are diamond-shaped.
6. A heat sink according to any of the preceding claims, wherein the heat sink comprises a recess for receiving the semiconductor device.
7. A heat sink according to Claim 6, wherein the recess is shaped so that, when the semiconductor device and the heat sink are mounted on a circuit board, the heat sink encloses the top and sides of the device.
8. A heat sink according to any of the preceding claims, wherein the body further comprises a channel for a cooling medium, the channel passing through, but being closed off from, the array of interconnected chambers.
9. A heat sink according to any of the preceding claims, further comprising a solid base. - 8
10. A heat sink according to any of claims 1 to 8, further comprising one or more solid pads at the base of the body corresponding to areas of the semiconductor device which tend to produce more heat than other areas.
11. A heat sink substantially as herein described with reference to Figures 2 to 5 of the accompanying drawings.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0423678A GB2419463A (en) | 2004-10-25 | 2004-10-25 | Heat sink |
PCT/GB2005/004112 WO2006046022A1 (en) | 2004-10-25 | 2005-10-25 | Heat sink |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0423678A GB2419463A (en) | 2004-10-25 | 2004-10-25 | Heat sink |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0423678D0 GB0423678D0 (en) | 2004-11-24 |
GB2419463A true GB2419463A (en) | 2006-04-26 |
Family
ID=33485169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0423678A Withdrawn GB2419463A (en) | 2004-10-25 | 2004-10-25 | Heat sink |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB2419463A (en) |
WO (1) | WO2006046022A1 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007124776A1 (en) * | 2006-05-03 | 2007-11-08 | Iq Evolution Gmbh | Micro-heat sink |
EP2236970A1 (en) | 2009-01-30 | 2010-10-06 | TuTech Innovation GmbH | Heat exchanger with a phase change material and method for its manufacture |
WO2013153486A1 (en) * | 2012-04-10 | 2013-10-17 | Koninklijke Philips N.V. | Heat sink |
GB2549499A (en) * | 2016-04-19 | 2017-10-25 | Rolls Royce Plc | Method of forming a heat exchanger |
DE102016222376B3 (en) * | 2016-11-15 | 2018-02-15 | Zf Friedrichshafen Ag | Electronic module and method for producing the same |
FR3062279A1 (en) * | 2017-06-26 | 2018-07-27 | Sagemcom Broadband Sas | HEATSINK |
US10393409B2 (en) | 2012-10-01 | 2019-08-27 | Forced Physics, Llc | Device and method for temperature control |
EP3657115A1 (en) * | 2018-11-23 | 2020-05-27 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Method for manufacturing a heat exchanger module with at least one fluid circulation circuit |
US10741995B2 (en) * | 2016-09-27 | 2020-08-11 | Jenoptik Optical Systems Gmbh | Optical and optoelectronic assembly and method for the production thereof |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1905171A (en) * | 2005-07-26 | 2007-01-31 | 黄福国 | Radiating device |
DE102015215570A1 (en) | 2015-08-14 | 2017-02-16 | Siemens Aktiengesellschaft | Heat sink for an electronic component and method for its production |
EP3792967A1 (en) * | 2019-09-16 | 2021-03-17 | Nokia Technologies Oy | Heat sink |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58125855A (en) * | 1982-01-21 | 1983-07-27 | Matsushita Electric Works Ltd | Cooling structure of semiconductor element |
US5960863A (en) * | 1998-01-07 | 1999-10-05 | Hua; Hsu Mei | Dissipating device for computer chips |
DE10112591A1 (en) * | 2000-03-15 | 2001-10-11 | Matthias Fockele | Production of a molded body used for molding a metal powder or a liquid resin comprises solidifying and/or melting a liquid or powdered raw material by irradiating with a laser beam corresponding to the cross-section of the molded body |
US6591898B1 (en) * | 2002-06-20 | 2003-07-15 | International Business Machines Corporation | Integrated heat sink system for a closed electronics container |
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US3226602A (en) * | 1962-10-29 | 1965-12-28 | Thore M Elfving | Heat transferring mounting panels for electric components and circuits |
JP2536657B2 (en) * | 1990-03-28 | 1996-09-18 | 三菱電機株式会社 | Electric device and manufacturing method thereof |
EP0471552B1 (en) * | 1990-08-14 | 1997-07-02 | Texas Instruments Incorporated | Heat transfer module for ultra high density and silicon on silicon packaging applications |
JPH088421B2 (en) * | 1991-03-20 | 1996-01-29 | さとみ 伊藤 | Heat dissipation device |
GB2310896A (en) * | 1996-03-05 | 1997-09-10 | Rolls Royce Plc | Air cooled wall |
DE19710783C2 (en) * | 1997-03-17 | 2003-08-21 | Curamik Electronics Gmbh | Coolers for use as a heat sink for electrical components or circuits |
US5823249A (en) * | 1997-09-03 | 1998-10-20 | Batchelder; John Samual | Manifold for controlling interdigitated counterstreaming fluid flows |
US6391251B1 (en) * | 1999-07-07 | 2002-05-21 | Optomec Design Company | Forming structures from CAD solid models |
US6478082B1 (en) * | 2000-05-22 | 2002-11-12 | Jia Hao Li | Heat dissipating apparatus with nest wind duct |
DE10123456A1 (en) * | 2001-05-14 | 2002-11-21 | Pore M Gmbh | Heat exchanger consists of open pored metal foam, whereby at least some cells contained in metal foam are connected together so that fluid medium can flow through metal foam |
TW577586U (en) * | 2003-01-22 | 2004-02-21 | Hon Hai Prec Ind Co Ltd | Liquid cooling device |
US6992891B2 (en) * | 2003-04-02 | 2006-01-31 | Intel Corporation | Metal ball attachment of heat dissipation devices |
-
2004
- 2004-10-25 GB GB0423678A patent/GB2419463A/en not_active Withdrawn
-
2005
- 2005-10-25 WO PCT/GB2005/004112 patent/WO2006046022A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58125855A (en) * | 1982-01-21 | 1983-07-27 | Matsushita Electric Works Ltd | Cooling structure of semiconductor element |
US5960863A (en) * | 1998-01-07 | 1999-10-05 | Hua; Hsu Mei | Dissipating device for computer chips |
DE10112591A1 (en) * | 2000-03-15 | 2001-10-11 | Matthias Fockele | Production of a molded body used for molding a metal powder or a liquid resin comprises solidifying and/or melting a liquid or powdered raw material by irradiating with a laser beam corresponding to the cross-section of the molded body |
US6591898B1 (en) * | 2002-06-20 | 2003-07-15 | International Business Machines Corporation | Integrated heat sink system for a closed electronics container |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007124776A1 (en) * | 2006-05-03 | 2007-11-08 | Iq Evolution Gmbh | Micro-heat sink |
EP2236970A1 (en) | 2009-01-30 | 2010-10-06 | TuTech Innovation GmbH | Heat exchanger with a phase change material and method for its manufacture |
WO2013153486A1 (en) * | 2012-04-10 | 2013-10-17 | Koninklijke Philips N.V. | Heat sink |
US10393409B2 (en) | 2012-10-01 | 2019-08-27 | Forced Physics, Llc | Device and method for temperature control |
US10677497B2 (en) | 2012-10-01 | 2020-06-09 | Forced Physics, Llc | Device and method for temperature control |
GB2549499A (en) * | 2016-04-19 | 2017-10-25 | Rolls Royce Plc | Method of forming a heat exchanger |
US10741995B2 (en) * | 2016-09-27 | 2020-08-11 | Jenoptik Optical Systems Gmbh | Optical and optoelectronic assembly and method for the production thereof |
DE102016222376B3 (en) * | 2016-11-15 | 2018-02-15 | Zf Friedrichshafen Ag | Electronic module and method for producing the same |
FR3062279A1 (en) * | 2017-06-26 | 2018-07-27 | Sagemcom Broadband Sas | HEATSINK |
EP3657115A1 (en) * | 2018-11-23 | 2020-05-27 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Method for manufacturing a heat exchanger module with at least one fluid circulation circuit |
FR3088997A1 (en) * | 2018-11-23 | 2020-05-29 | Commissariat A L' Energie Atomique Et Aux Energies Alternatives | Method for producing a heat exchanger module with at least one fluid circulation circuit |
Also Published As
Publication number | Publication date |
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WO2006046022A1 (en) | 2006-05-04 |
GB0423678D0 (en) | 2004-11-24 |
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