GB2415828A - Method for closing perforated membranes - Google Patents
Method for closing perforated membranes Download PDFInfo
- Publication number
- GB2415828A GB2415828A GB0427160A GB0427160A GB2415828A GB 2415828 A GB2415828 A GB 2415828A GB 0427160 A GB0427160 A GB 0427160A GB 0427160 A GB0427160 A GB 0427160A GB 2415828 A GB2415828 A GB 2415828A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- fine
- membrane
- pored
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012528 membrane Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000011148 porous material Substances 0.000 claims abstract description 12
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 4
- 229910020323 ClF3 Inorganic materials 0.000 description 2
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00547—Etching processes not provided for in groups B81C1/00531 - B81C1/00539
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0115—Porous silicon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
A membrane structure includes a membrane layer which can be a carrier for micromechanical functional elements such as thermal sensors. A fine-pored layer 2 having pore sizes of a few nanometres is produced on a substrate 1 in the region where the membrane 3 is to be formed, using a porous silicon technology. The porous silicon is oxidised to protect it during an etching process. CIF3 gas is used as an etchant, which penetrates through apertures formed photolithographically in the membrane and pores of the fine-pored layer, underetching the membrane and forming a cavern 6 in the substrate. The cavern is closed by a very thin closing layer 5, for which the thickness is determined by the pore size of the fine-pored layer.
Description
24 1 5828 Method for closing perforated membranes
The prior art
The invention relates to a method for producing a membrane structure having closed perforation apertures. The invention further relates to the corresponding membrane structure.
To manufacture thermal sensors (e.g. infrared sensors) in surface micromechanlas, a gas phase etching process (e.g. ClF3) is used, whereby it is possible to etch a cavern for thermal decoupling into the bulk silicon through a perforated membrane. Typical etching depths of such a cavern are in the range from 10 - 150 m. Because the etching process is largely isotropic, the width of the underetch1ng is approximately as great as the etching depth.
To completely urlderetch large-area membranes having extensions of several 100 Bum it is therefore necessary to form more than one etching hole in the rnernbrane. Typical sizes of such an etching hole are 0.5 to 5 pm. Such a perforated membrane is known, for example, from the still unpublished German patent application, reference number 103 15 963.
Such a perforated membrane can prove troublesome for various reasorls: reduced mechaIlical strength depositing of detritus in the cavern during subsequent manufacturing processes (e.g. sawing, separation) depositing of detritus in the cavern during the sensor's operating life (responsible for "serrsor drift").
For this reason such apertures are advantageously closed.
The closing of these apertures can be effected, for example, by depositing an additional layer thereon. The necessary layer thickness is dependent on the size of the perforation apertures (typically, the layer thickness is approximately equal to the diameter of the apertures).
Thick closing layers are, however, undesirable because of their detrimental mechanical and thermal characteristics.
In addition, large layer thicknesses require long deposition times and therefore high costs.
Advantages of the invention The invention relates to a method for producing a membrane structure having closed perforation apertures which covers a cavity, in which at least one fine-pored layer is produced on a substrate, by means of an etching process which penetrates the fine-pored layer a cavity covered by at least the fine pored layer is produced below the flne-pored layer, a closing layer which at least partially covers the fine-pored layer is produced on the fine-pored layer.
The fine-pored layer with small pore diameters makes possible the use of thin closing layers. A major advantage of closing the membrane is that very low pressures can be enclosed thereby so that heat dissipation through the cavern is reduced.
An advantageous embodiment of the invention is characterized in that the closing layer is produced on the side of the fine-pored layer facing away from the cavity.
This makes possible an especially simple manufacturing process, since the closing layer is applied from outside to the fine-pored layer or membrane layer.
An advantageous embodiment of the invention is characterized in that the fine-pored layer is made of porous silicon.
An advantageous embodiment of the invention is characterized in that the porous silicon or the fine-pored layer is oxidised before the etching process. This layer is thereby prepared in such a way that it is not destroyed or substantially damaged by the subsequent etching process which penetrates it.
An advantageous embodiment of the invention is characterized in that a perforated membrane layer is produced on the fine-pored layer. This membrane layer is suitable as a carrier for rnicromechanical functional elements; the underetching of the membrane layer, and therefore the formation of the cavern, is carried out through the perforation apertures of the membrane layer.
An advantageous embodiment of the invention is characterized in that the etching process to produce the cavity is carried out through the perforation apertures of the membrane layer and through the fine-pored layer. Here the permeability of the fine--pored layer is utilized in a specified and advantageous manner for etching processes.
An advantageous embodiment of the invention is characterized in that the closing layer is applied in such a way that it is located on the membrane layer outside the perforation apertures, and it is located on the fine-pored layer in the perforation apertures.
The closing layer therefore covers the entire surface of the membrane including the perforation apertures.
An advantageous embodiment of the invention is characterized in that the closing layer consists of nitride or oxide or a metal. Use is thereby made of proven materials.
An advantageous embodiment of the invention is characterized in that the fine-pored layer has a thickness from 0.1 sum to 1 sum, in order not to adversely lnflueIlce the thermal characteristics of the sensor.
An advantageous embodiment of the invention is characterized in that the porous silicon or the fine-pored layer has pores having diameters substantially from 1 nm to 500 no. This makes possible very thin c]osirlg layers from a few tens to a few hundreds of nanometres thick. The use of the term "substantially" is intended to indicate that, self-evidently, in a statistical distribution, individual ("stray") pores having diameters greater than 100 no are also possible.
An advantageous embodiment of the invention is characterized in that the closing layer has a thickness of a few hundreds of nanometres or less. In particular, the layer thickness is from 10 nm to lOOO nm.
An advantageous embodiment of the invention is characterized in that the entire membrane is manufactured from oxidised porous silicon.
An advantageous embodiment of the invention is characterized in that the fine-pored layer does not completely cover the cavity and is located only in the perforation zone of the membrane.
The invention further includes a membrane structure having closed perforation apertures which covers a cavity and includes at least one fine-pored layer on the side of the membrane facing towards the cavity, and a closing layer which at least partially covers the fine-pored layer on the side of the membrane facing away from the cavity.
The advantageous embodiments of the method according to the invention are also manifested, of course, as advantageous embodiments of the mernbrarle structure according to the invention and vice versa.
Drawings In Figs. 1 to 5 the temporal sequence of the execution of the basic process is represented in a first exemplary embodiment.
Fig. 6 shows a second exemplary embodiment.
Fig. 7 shows a third exemplary embodiment.
Exemplary embodiments By means of changes in the execution of the process smaller etching apertures than the 0.5 1um known from the prior art can be reallsed. The structuring of parts of the membrane is not carried out photolithographically but by a porosity- inducing process. T-Iole sizes having diameters of a few nanometres can thereby be produced and the etching apertures can be closed with very thin layers.
For this reason a so-called nanoporous or mesoporous layer is produced below the membrane using a porous silicon technology. At this stage the perforated membrane is hermetically closed as soon as this porous layer, having pore diameters from 1 to 100 nm, has been closed. Only very thin closing layers (order of magnitude 10 no - 100 nm thick) are therefore needed.
The execution of the process will now be explained with reference to Figs. 1 to 7: Fig. 1: A very thin layer of porous silicon (thickness preferably from 100 no to 1 I'm) is first produced on the substrate 1 in zone 2, on which the membrane is later to be formed. The size of the pores is determined by the parameters of the porosity-inducing process (substantially the current density). The pore size at the same time predefines the thickness of the closing layer which will later be necessary. The porous silicon (referred to as PorSi) is oxidlsed (referred to as OxPorSi) to protect it during the subsequent Si etching process for forming the cavern.
Fig. 2: The membrane 3 proper, with the sensitive structures or functional elements, is produced above this OxPorSi layer 2.
Fig. 3: A photoresist layer 4 is applied over the membrane 3. The membrane 3 is then structured photolithographlcally in the zone of the OxPorSi layer and opened as far as the OxPorSi layer 2. The perforation apertures are thereby produced.
Four perforation apertures are shown as an example in Fig. 3.
Fig. 4.
Using a standard process the membrane is now underetched (e.g. with the etching gas ClF3). As this happens the etching gas is able to penetrate the substrate 1 through the perforation apertures of the membrane 3 and the pores of the OxPorSi layer 2. The cavern or cavity 6 is thereby produced.
Fig. 5:
_ _
After the removal of the photoresist layer 4 the cavern is closed by means of a very thin closing layer 5 (e.g. CVD oxide or nitride). The necessary layer thickness does not result from the size of the perforation apertures but from the pore size of the OxPorSi layer.
Because of the very low thermal conductivity of OxPorSi /approximately 0.3 - 0.5 W/(m*K)), the 0.: to 1 IBM thick OxPorSi layer 2 has only a very small influence on the thermal characteristics of the sensor.
Fig. 6:
_ _
This Figure shows an embodiment of the invention in which the OxPorSi layer 2 has been produced only in the zone of the perforation apertures. 5 again designates the closing layer, 3 again designates the membrane layer.
Fig. 7.
This Figure shows an embodiment of the invention in which the membrane is produced entirely from OxPorSi 2. Located thereon are the sensor structures 7 and the closing layer 5. In this case the membrane layer and its perforations, used in the first two exemplary embodiments, are omitted.
Embodiments in which the membrane is manufactured only partially from OxPorSi are, of course, also possible.
Claims (16)
- Claims 1. Method for producing a membrane structure having closedperforation apertures which covers a cavity, in which at least one fine-pored layer (2) is produced on a substrate (1), by means of an etching process which penetrates the fine-pored layer, a cavity (6) covered by at least the fine-pored layer (2) is produced in the substrate (1) below the fine-pored layer (2), a closing layer (5) which at least partially covers the fine-pored layer (2) is produced on the fine-pored layer.
- 2. Method according to claim 1, characterized in that the closing layer is produced on the side of the fine-pored layer (2) facing away from the cavity.
- 3. Method according to claim 1, characterized in that the fine-pored layer (2) consists of porous silicon.
- 4. Method according to claim 1, characterized in that the fine-pored layer (2) is oxidised before the etching process.
- 5. Method according to claim 1, characterized in that a perforated membrane layer (3) is produced on the fine-pored layer (2).
- 6. Method according to claim 5, characterlsed in that the etching process for producing the cavity (6) is carried out through the perforation apertures of the membrane layer (3) and through the fine-pored layer (2).
- 7. Method according to claim 5, characterized In that the closing layer (5) is applied in such a way that it is located on the membrane layer (3) outside the perforation apertures, and it is located on the fine-pored layer (2) in the perforation apertures.
- 8. Method according to claim 1, characterized in that the closing layer (5) consists of nitride or oxide or metals.
- 9. Method according to claim 1, characterized in that the fine-pored layer has a thickness from 0.01 1um to 1 Jm.
- 10. Method according to claim 1, character-iced in that the fine-pored layer has pores with diameters substantially from 1 no to 500 no.
- 11. Method according to claim 1, characterized in that the closing layer has a thickness from 10 rim to 1000 am.
- 12. Method according to claim 1, characterized in that tile entire membrane is manufactured Frorn oxidized porous silicon.
- 13. Method according to claim 5, characterized in that the fine-pored layer (2) does not completely cover the cavity (6) and is located only in the perforation zone of the membrane.
- 14. Membrane structure having closed perforation apertures which covers a cavity (6), including at least one fine-pored layer (2) on the side of the membrane facing towards the cavity, and a closing layer (5) on the side of the membrane facing away from the cavity, which closing layer (5) at least partially covers the fine-pored layer (2).
- 15. Method substantially as hereinbefore described with reference to the accompanying drawings.
- 16. Membrane structure substantially as herein before described with reference to the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004015442A DE102004015442A1 (en) | 2004-03-30 | 2004-03-30 | Method of closing perforated membranes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB0427160D0 GB0427160D0 (en) | 2005-01-12 |
| GB2415828A true GB2415828A (en) | 2006-01-04 |
| GB2415828B GB2415828B (en) | 2006-06-28 |
Family
ID=34072186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0427160A Expired - Fee Related GB2415828B (en) | 2004-03-30 | 2004-12-10 | Method for closing perforated membranes |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2005279928A (en) |
| DE (1) | DE102004015442A1 (en) |
| FR (1) | FR2868412A1 (en) |
| GB (1) | GB2415828B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017210459A1 (en) * | 2017-06-22 | 2018-12-27 | Robert Bosch Gmbh | Micromechanical device with a first cavity and a second cavity |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4838088A (en) * | 1986-07-18 | 1989-06-13 | Nissan Motor Co., Ltd. | Pressure transducer and method for fabricating same |
| WO2001046066A2 (en) * | 1999-12-21 | 2001-06-28 | Robert Bosch Gmbh | Sensor with at least one micromechanical structure and method for the production thereof |
| WO2002051741A2 (en) * | 2000-12-22 | 2002-07-04 | Robert Bosch Gmbh | Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method |
| WO2002051742A2 (en) * | 2000-12-23 | 2002-07-04 | Robert Bosch Gmbh | Micromechanical component and corresponding production method |
| WO2002081363A2 (en) * | 2001-04-07 | 2002-10-17 | Robert Bosch Gmbh | Method for producing a semiconductor component and a semiconductor component produced according to this method |
| WO2003062134A1 (en) * | 2002-01-24 | 2003-07-31 | Ncsr 'demokritos' | 'low power silicon thermal sensors and microfluidic devices based on the use of porous silicon sealed air cavity technology or microchannel technology' |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10053326A1 (en) * | 2000-10-27 | 2002-05-08 | Bosch Gmbh Robert | Micro-mechanical component for sensing dew point contains membrane and porous material thermal insulating zone membrane support |
| FI112644B (en) * | 2000-11-10 | 2003-12-31 | Vaisala Oyj | Surface micromechanical absolute pressure sensor and method of manufacture thereof |
-
2004
- 2004-03-30 DE DE102004015442A patent/DE102004015442A1/en not_active Withdrawn
- 2004-12-10 GB GB0427160A patent/GB2415828B/en not_active Expired - Fee Related
-
2005
- 2005-03-24 FR FR0550765A patent/FR2868412A1/en active Pending
- 2005-03-30 JP JP2005099338A patent/JP2005279928A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4838088A (en) * | 1986-07-18 | 1989-06-13 | Nissan Motor Co., Ltd. | Pressure transducer and method for fabricating same |
| WO2001046066A2 (en) * | 1999-12-21 | 2001-06-28 | Robert Bosch Gmbh | Sensor with at least one micromechanical structure and method for the production thereof |
| WO2002051741A2 (en) * | 2000-12-22 | 2002-07-04 | Robert Bosch Gmbh | Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method |
| WO2002051742A2 (en) * | 2000-12-23 | 2002-07-04 | Robert Bosch Gmbh | Micromechanical component and corresponding production method |
| WO2002081363A2 (en) * | 2001-04-07 | 2002-10-17 | Robert Bosch Gmbh | Method for producing a semiconductor component and a semiconductor component produced according to this method |
| WO2003062134A1 (en) * | 2002-01-24 | 2003-07-31 | Ncsr 'demokritos' | 'low power silicon thermal sensors and microfluidic devices based on the use of porous silicon sealed air cavity technology or microchannel technology' |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102004015442A1 (en) | 2005-10-20 |
| JP2005279928A (en) | 2005-10-13 |
| GB2415828B (en) | 2006-06-28 |
| FR2868412A1 (en) | 2005-10-07 |
| GB0427160D0 (en) | 2005-01-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20121210 |