GB2359825A - Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering - Google Patents

Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering

Info

Publication number
GB2359825A
GB2359825A GB0112058A GB0112058A GB2359825A GB 2359825 A GB2359825 A GB 2359825A GB 0112058 A GB0112058 A GB 0112058A GB 0112058 A GB0112058 A GB 0112058A GB 2359825 A GB2359825 A GB 2359825A
Authority
GB
United Kingdom
Prior art keywords
tantalum
sputtering
copper
high purity
barrier layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0112058A
Other languages
English (en)
Other versions
GB0112058D0 (en
Inventor
Binxi Sun
Tony Chiang
Vikram Pavate
Peijun Ding
Barry Chin
Arvind Sundarrajan
Ilyoung Richard Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of GB0112058D0 publication Critical patent/GB0112058D0/en
Publication of GB2359825A publication Critical patent/GB2359825A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
GB0112058A 1998-11-12 1999-11-05 Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering Withdrawn GB2359825A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19107898A 1998-11-12 1998-11-12
PCT/US1999/026290 WO2000029636A2 (fr) 1998-11-12 1999-11-05 Couches barrieres au tantale ameliorees pour le cuivre utilisant des cibles de pulverisation cathodique de purete elevee

Publications (2)

Publication Number Publication Date
GB0112058D0 GB0112058D0 (en) 2001-07-11
GB2359825A true GB2359825A (en) 2001-09-05

Family

ID=22704050

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0112058A Withdrawn GB2359825A (en) 1998-11-12 1999-11-05 Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering

Country Status (6)

Country Link
JP (1) JP2002530526A (fr)
KR (1) KR20010080437A (fr)
DE (1) DE19983727T1 (fr)
GB (1) GB2359825A (fr)
TW (1) TW520401B (fr)
WO (1) WO2000029636A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4336206B2 (ja) 2004-01-07 2009-09-30 Ｈｏｙａ株式会社 マスクブランクの製造方法、及びマスクブランク製造用スパッタリングターゲット
US7686926B2 (en) 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3790259T1 (fr) * 1986-06-11 1988-06-23 Nippon Mining Co., Ltd., Tokio/Tokyo, Jp
US5111355A (en) * 1990-09-13 1992-05-05 National Semiconductor Corp. High value tantalum oxide capacitor
EP0496637A2 (fr) * 1991-01-25 1992-07-29 Kabushiki Kaisha Toshiba Films conducteur de grande pureté et leur utilisation dans les semi-conducteurs
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
EP0844313A2 (fr) * 1996-11-21 1998-05-27 Applied Materials, Inc. Méthode et appareillage de pulvérisation dans une chambre ayant un plasma à couplage inductif
EP0872572A1 (fr) * 1997-04-15 1998-10-21 Japan Energy Corporation Cible pour pulvérisation cathodique et son procédé de fabrication

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3790259T1 (fr) * 1986-06-11 1988-06-23 Nippon Mining Co., Ltd., Tokio/Tokyo, Jp
US5111355A (en) * 1990-09-13 1992-05-05 National Semiconductor Corp. High value tantalum oxide capacitor
EP0496637A2 (fr) * 1991-01-25 1992-07-29 Kabushiki Kaisha Toshiba Films conducteur de grande pureté et leur utilisation dans les semi-conducteurs
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
EP0844313A2 (fr) * 1996-11-21 1998-05-27 Applied Materials, Inc. Méthode et appareillage de pulvérisation dans une chambre ayant un plasma à couplage inductif
EP0872572A1 (fr) * 1997-04-15 1998-10-21 Japan Energy Corporation Cible pour pulvérisation cathodique et son procédé de fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Japanese Journal of Applied Physics Supplements, 20 August 986, pages 253-256 *

Also Published As

Publication number Publication date
WO2000029636A2 (fr) 2000-05-25
DE19983727T1 (de) 2002-03-21
WO2000029636A9 (fr) 2001-07-19
GB0112058D0 (en) 2001-07-11
KR20010080437A (ko) 2001-08-22
JP2002530526A (ja) 2002-09-17
WO2000029636A3 (fr) 2000-09-08
TW520401B (en) 2003-02-11

Similar Documents

Publication Publication Date Title
SG83197A1 (en) Improved copper target for sputter deposition
IL160890A0 (en) Textured-grain-powder metallurgy tantalum sputter target
AU6790000A (en) Improved fill material for dual damascene processes
SG72907A1 (en) Method for forming copper damascene structure by using a dual cmp barrier layer
AU2587699A (en) Cathode arc vapor deposition
AU5140299A (en) Aluminium alloy, notably for a layer
SG87919A1 (en) Non-conductive barrier formations for copper damascene type interconnects
AU2001296609A1 (en) High-density metal capacitor using dual-damascene copper interconnect
AU2003218389A1 (en) Tantalum barrier removal solution
AU4314399A (en) Contoured sputtering target
AU4137701A (en) Barrier structure for food
SG87187A1 (en) Pvd-imp tungsten and tungsten nitride as a liner, barrier and/or seed layer for tungsten, aluminium and copper applications
AU2002211705A1 (en) Sputter targets
SG85232A1 (en) Method of enhancing hardness of sputter deposited copper films
SG85196A1 (en) Low resistivity tantalum
AU4858800A (en) Copper alloy
AU2894699A (en) Electrolytic copper foil having a modified shiny side
GB9930222D0 (en) Barrier for copper metallization
GB9725434D0 (en) Sputter deposition
AU4318999A (en) Cobalt-chromium-palladium-based brazing alloys
IL161750A0 (en) Textured-metastable aluminum alloy sputter targets
AU6588800A (en) Circuit interrupter with crossbar having improved barrier protection
GB0224233D0 (en) Magnetron sputtering
GB0112058D0 (en) Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering
AU2002228716A1 (en) Sputtering target assemblies

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)