GB2354110A - Ridge waveguide lasers - Google Patents

Ridge waveguide lasers Download PDF

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Publication number
GB2354110A
GB2354110A GB9921445A GB9921445A GB2354110A GB 2354110 A GB2354110 A GB 2354110A GB 9921445 A GB9921445 A GB 9921445A GB 9921445 A GB9921445 A GB 9921445A GB 2354110 A GB2354110 A GB 2354110A
Authority
GB
United Kingdom
Prior art keywords
optoelectronic component
component
optoelectronic
regions
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9921445A
Other languages
English (en)
Other versions
GB9921445D0 (https=
Inventor
Aeneas Benedict Massara
Laurence John Sarjent
Richard Vincent Penty
Ian Hugh White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Bristol
Original Assignee
University of Bristol
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Bristol filed Critical University of Bristol
Priority to GB9921445A priority Critical patent/GB2354110A/en
Publication of GB9921445D0 publication Critical patent/GB9921445D0/en
Priority to AT00958866T priority patent/ATE239990T1/de
Priority to EP00958866A priority patent/EP1214764B1/en
Priority to DE60002591T priority patent/DE60002591T2/de
Priority to AU70280/00A priority patent/AU7028000A/en
Priority to PCT/GB2000/003483 priority patent/WO2001018924A1/en
Publication of GB2354110A publication Critical patent/GB2354110A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Communication System (AREA)
GB9921445A 1999-09-08 1999-09-08 Ridge waveguide lasers Withdrawn GB2354110A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB9921445A GB2354110A (en) 1999-09-08 1999-09-08 Ridge waveguide lasers
AT00958866T ATE239990T1 (de) 1999-09-08 2000-09-08 Halbleiterlaserdiode mit verteiltem reflektor
EP00958866A EP1214764B1 (en) 1999-09-08 2000-09-08 Semiconductor laser diode with a distributed reflector
DE60002591T DE60002591T2 (de) 1999-09-08 2000-09-08 Halbleiterlaserdiode mit verteiltem reflektor
AU70280/00A AU7028000A (en) 1999-09-08 2000-09-08 Semiconductor laser diode with a distributed reflector
PCT/GB2000/003483 WO2001018924A1 (en) 1999-09-08 2000-09-08 Semiconductor laser diode with a distributed reflector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9921445A GB2354110A (en) 1999-09-08 1999-09-08 Ridge waveguide lasers

Publications (2)

Publication Number Publication Date
GB9921445D0 GB9921445D0 (https=) 1999-11-10
GB2354110A true GB2354110A (en) 2001-03-14

Family

ID=10860715

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9921445A Withdrawn GB2354110A (en) 1999-09-08 1999-09-08 Ridge waveguide lasers

Country Status (6)

Country Link
EP (1) EP1214764B1 (https=)
AT (1) ATE239990T1 (https=)
AU (1) AU7028000A (https=)
DE (1) DE60002591T2 (https=)
GB (1) GB2354110A (https=)
WO (1) WO2001018924A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1422797A1 (en) * 2002-11-22 2004-05-26 Sony Corporation Semiconductor laser device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2386254A (en) 1999-03-05 2003-09-10 Nanovis Llc Superlattices
JP4111279B2 (ja) * 2002-06-03 2008-07-02 メアーズ テクノロジーズ， インコーポレイテッド 波長制御を伴うファブリペローレーザ

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0125608A2 (en) * 1983-05-09 1984-11-21 Nec Corporation Single longitudinal mode semiconductor laser
EP0263690A2 (en) * 1986-10-08 1988-04-13 Sharp Kabushiki Kaisha A distributed feedback semiconductor laser device
EP0276071A2 (en) * 1987-01-21 1988-07-27 AT&T Corp. Hybrid laser for optical communications
US4856017A (en) * 1987-12-22 1989-08-08 Ortel Corporation Single frequency high power semiconductor laser
US4873691A (en) * 1987-07-31 1989-10-10 Hitachi, Ltd. Wavelength-tunable semiconductor laser
EP0402907A2 (en) * 1989-06-14 1990-12-19 Hitachi, Ltd. Semiconductor laser device
GB2280308A (en) * 1993-07-20 1995-01-25 Mitsubishi Electric Corp Semiconductor optical devices
EP0887668A1 (fr) * 1997-06-26 1998-12-30 Alcatel Alsthom Compagnie Generale D'electricite Réflecteur de bragg en semi-conducteur et procédé de fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02143581A (ja) * 1988-11-25 1990-06-01 Furukawa Electric Co Ltd:The 半導体レーザ素子
FR2734097B1 (fr) * 1995-05-12 1997-06-06 Thomson Csf Laser a semiconducteurs
JPH1098235A (ja) * 1996-08-01 1998-04-14 Pioneer Electron Corp 無再成長分布帰還リッジ型半導体レーザ及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0125608A2 (en) * 1983-05-09 1984-11-21 Nec Corporation Single longitudinal mode semiconductor laser
EP0263690A2 (en) * 1986-10-08 1988-04-13 Sharp Kabushiki Kaisha A distributed feedback semiconductor laser device
EP0276071A2 (en) * 1987-01-21 1988-07-27 AT&T Corp. Hybrid laser for optical communications
US4873691A (en) * 1987-07-31 1989-10-10 Hitachi, Ltd. Wavelength-tunable semiconductor laser
US4856017A (en) * 1987-12-22 1989-08-08 Ortel Corporation Single frequency high power semiconductor laser
EP0402907A2 (en) * 1989-06-14 1990-12-19 Hitachi, Ltd. Semiconductor laser device
GB2280308A (en) * 1993-07-20 1995-01-25 Mitsubishi Electric Corp Semiconductor optical devices
EP0887668A1 (fr) * 1997-06-26 1998-12-30 Alcatel Alsthom Compagnie Generale D'electricite Réflecteur de bragg en semi-conducteur et procédé de fabrication

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1422797A1 (en) * 2002-11-22 2004-05-26 Sony Corporation Semiconductor laser device
US7248612B2 (en) 2002-11-22 2007-07-24 Sony Corporation Semiconductor laser device with multi-dimensional-photonic-crystallized region
US7510887B2 (en) 2002-11-22 2009-03-31 Sony Corporation Semiconductor laser device
US7879628B2 (en) 2002-11-22 2011-02-01 Sony Corporation Semiconductro laser device

Also Published As

Publication number Publication date
GB9921445D0 (https=) 1999-11-10
DE60002591D1 (de) 2003-06-12
AU7028000A (en) 2001-04-10
DE60002591T2 (de) 2004-04-01
EP1214764A1 (en) 2002-06-19
ATE239990T1 (de) 2003-05-15
WO2001018924A1 (en) 2001-03-15
EP1214764B1 (en) 2003-05-07

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)