GB2337132A - High conductivity buried layer in optical waveguide - Google Patents

High conductivity buried layer in optical waveguide

Info

Publication number
GB2337132A
GB2337132A GB9921529A GB9921529A GB2337132A GB 2337132 A GB2337132 A GB 2337132A GB 9921529 A GB9921529 A GB 9921529A GB 9921529 A GB9921529 A GB 9921529A GB 2337132 A GB2337132 A GB 2337132A
Authority
GB
United Kingdom
Prior art keywords
rib
layer
contact layer
selectively etched
surface layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9921529A
Other versions
GB9921529D0 (en
GB2337132B (en
Inventor
Robert John Bozeat
Vishal Nayar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9705803A external-priority patent/GB2323450A/en
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Priority to GB9921529A priority Critical patent/GB2337132B/en
Publication of GB2337132A publication Critical patent/GB2337132A/en
Publication of GB9921529D0 publication Critical patent/GB9921529D0/en
Application granted granted Critical
Publication of GB2337132B publication Critical patent/GB2337132B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

An optical device (300) comprises a multilayer structure, formed by wafer bonding, incorporating in sequence a silicon dioxide layer (304), a buried silicide layer (306), a contact layer (308) and a silicon surface layer (310). The surface layer (310) is selectively etched to form an exposed rib (312). An upper surface of the rib (312) is doped to form an elongate electrode (314) therealong. The surface layer (310) is selectively etched to the contact layer (308) in regions remote from the rib (312) to form via channels (316a, 316b) for making electrical connection to the contact layer (308). The rib (312) forms a waveguide along which radiation propagates. When the electrode (314) is biased relative to the contact layer (308), charge carriers are injected into the rib (312) and induce refractive index changes in a central, region (324) thereof where most of the radiation propagates along the rib (312). The silicide layer (306) provides an efficient current conduction path for injecting the carriers, thereby providing enhanced device operating bandwidth and reduced power dissipation.
GB9921529A 1997-03-20 1998-02-24 High conductivity buried layer in optical waveguide Expired - Fee Related GB2337132B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9921529A GB2337132B (en) 1997-03-20 1998-02-24 High conductivity buried layer in optical waveguide

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9705803A GB2323450A (en) 1997-03-20 1997-03-20 Optical modulator
PCT/GB1998/000585 WO1998043128A1 (en) 1997-03-20 1998-02-24 High conductivity buried layer in optical waveguide
GB9921529A GB2337132B (en) 1997-03-20 1998-02-24 High conductivity buried layer in optical waveguide

Publications (3)

Publication Number Publication Date
GB2337132A true GB2337132A (en) 1999-11-10
GB9921529D0 GB9921529D0 (en) 1999-11-17
GB2337132B GB2337132B (en) 2001-04-18

Family

ID=26311225

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9921529A Expired - Fee Related GB2337132B (en) 1997-03-20 1998-02-24 High conductivity buried layer in optical waveguide

Country Status (1)

Country Link
GB (1) GB2337132B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2373370A (en) * 2001-03-13 2002-09-18 Bookham Technology Plc A method of forming an integrated waveguide

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04107428A (en) * 1990-08-28 1992-04-08 Fujikura Ltd Substrate type optical switch
US5153934A (en) * 1990-11-14 1992-10-06 Oki Electric Industry Co., Ltd. Waveguide-type optical device
US5434935A (en) * 1991-06-19 1995-07-18 Robert Bosch Gmbh Integrated optical circuit having one or more waveguides arranged on a substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04107428A (en) * 1990-08-28 1992-04-08 Fujikura Ltd Substrate type optical switch
US5153934A (en) * 1990-11-14 1992-10-06 Oki Electric Industry Co., Ltd. Waveguide-type optical device
US5434935A (en) * 1991-06-19 1995-07-18 Robert Bosch Gmbh Integrated optical circuit having one or more waveguides arranged on a substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan vol.016 no.355 (P-1394) & JP040107428 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2373370A (en) * 2001-03-13 2002-09-18 Bookham Technology Plc A method of forming an integrated waveguide

Also Published As

Publication number Publication date
GB9921529D0 (en) 1999-11-17
GB2337132B (en) 2001-04-18

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130224