GB2336721B - Trench mosfet structure - Google Patents

Trench mosfet structure

Info

Publication number
GB2336721B
GB2336721B GB9909419A GB9909419A GB2336721B GB 2336721 B GB2336721 B GB 2336721B GB 9909419 A GB9909419 A GB 9909419A GB 9909419 A GB9909419 A GB 9909419A GB 2336721 B GB2336721 B GB 2336721B
Authority
GB
United Kingdom
Prior art keywords
trench mosfet
mosfet structure
trench
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9909419A
Other versions
GB9909419D0 (en
GB2336721A (en
Inventor
Daniel M Kinzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB9909419D0 publication Critical patent/GB9909419D0/en
Publication of GB2336721A publication Critical patent/GB2336721A/en
Application granted granted Critical
Publication of GB2336721B publication Critical patent/GB2336721B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB9909419A 1998-04-23 1999-04-23 Trench mosfet structure Expired - Fee Related GB2336721B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8280398P 1998-04-23 1998-04-23

Publications (3)

Publication Number Publication Date
GB9909419D0 GB9909419D0 (en) 1999-06-23
GB2336721A GB2336721A (en) 1999-10-27
GB2336721B true GB2336721B (en) 2003-04-02

Family

ID=22173565

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9909419A Expired - Fee Related GB2336721B (en) 1998-04-23 1999-04-23 Trench mosfet structure

Country Status (6)

Country Link
JP (1) JPH11354794A (en)
KR (1) KR100340703B1 (en)
CN (1) CN1166002C (en)
DE (1) DE19918198B4 (en)
GB (1) GB2336721B (en)
TW (1) TW434648B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100699552B1 (en) * 2000-02-10 2007-03-26 인터내쇼널 렉티파이어 코포레이션 Vertical conduction flip-chip device with bump contacts on single surface
US6445035B1 (en) * 2000-07-24 2002-09-03 Fairchild Semiconductor Corporation Power MOS device with buried gate and groove
JP4570806B2 (en) * 2001-04-11 2010-10-27 セイコーインスツル株式会社 Manufacturing method of semiconductor integrated circuit device
DE10153315B4 (en) * 2001-10-29 2004-05-19 Infineon Technologies Ag Semiconductor device
WO2003046999A1 (en) * 2001-11-30 2003-06-05 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
KR100541139B1 (en) * 2003-10-02 2006-01-11 주식회사 케이이씨 Trench MOS and its manufacturing method
CN1314130C (en) * 2004-01-05 2007-05-02 东南大学 Longitudina multiface grid metal-oxide-semiconductor field effect transistor and its manufacturing method
US7265415B2 (en) * 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
JP2006202931A (en) 2005-01-20 2006-08-03 Renesas Technology Corp Semiconductor device and its manufacturing method
JP2006344759A (en) 2005-06-08 2006-12-21 Sharp Corp Trench type mosfet and its fabrication process
US7655977B2 (en) * 2005-10-18 2010-02-02 International Rectifier Corporation Trench IGBT for highly capacitive loads
JP5113331B2 (en) * 2005-12-16 2013-01-09 ルネサスエレクトロニクス株式会社 Semiconductor device
DE102005060702B4 (en) * 2005-12-19 2015-01-22 Infineon Technologies Austria Ag Vertical MOS transistor with low on-resistance
KR100922934B1 (en) 2007-12-26 2009-10-22 주식회사 동부하이텍 Semiconductor device and method for fabricating the same
CN101924103A (en) * 2009-06-09 2010-12-22 上海韦尔半导体股份有限公司 Groove type power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and manufacturing method thereof
US8318575B2 (en) 2011-02-07 2012-11-27 Infineon Technologies Ag Compressive polycrystalline silicon film and method of manufacture thereof
JP2012182483A (en) * 2012-05-11 2012-09-20 Renesas Electronics Corp Manufacturing method for semiconductor device
US9653455B1 (en) * 2015-11-10 2017-05-16 Analog Devices Global FET—bipolar transistor combination

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2077495A (en) * 1980-05-29 1981-12-16 Gen Instrument Corp V-mos field effect semiconductor device
US4568958A (en) * 1984-01-03 1986-02-04 General Electric Company Inversion-mode insulated-gate gallium arsenide field-effect transistors
US4859621A (en) * 1988-02-01 1989-08-22 General Instrument Corp. Method for setting the threshold voltage of a vertical power MOSFET
US4961100A (en) * 1988-06-20 1990-10-02 General Electric Company Bidirectional field effect semiconductor device and circuit
WO1994013017A1 (en) * 1992-11-24 1994-06-09 Cree Research, Inc. Power mosfet in silicon carbide
WO1996030947A1 (en) * 1995-03-31 1996-10-03 Siliconix Incorporated Punch-through field effect transistor
WO1996038862A1 (en) * 1995-06-02 1996-12-05 Siliconix Incorporated Bidirectional blocking accumulation-mode trench power mosfet

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795793A (en) * 1994-09-01 1998-08-18 International Rectifier Corporation Process for manufacture of MOS gated device with reduced mask count

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2077495A (en) * 1980-05-29 1981-12-16 Gen Instrument Corp V-mos field effect semiconductor device
US4568958A (en) * 1984-01-03 1986-02-04 General Electric Company Inversion-mode insulated-gate gallium arsenide field-effect transistors
US4859621A (en) * 1988-02-01 1989-08-22 General Instrument Corp. Method for setting the threshold voltage of a vertical power MOSFET
US4961100A (en) * 1988-06-20 1990-10-02 General Electric Company Bidirectional field effect semiconductor device and circuit
WO1994013017A1 (en) * 1992-11-24 1994-06-09 Cree Research, Inc. Power mosfet in silicon carbide
WO1996030947A1 (en) * 1995-03-31 1996-10-03 Siliconix Incorporated Punch-through field effect transistor
WO1996038862A1 (en) * 1995-06-02 1996-12-05 Siliconix Incorporated Bidirectional blocking accumulation-mode trench power mosfet

Also Published As

Publication number Publication date
KR100340703B1 (en) 2002-06-15
GB9909419D0 (en) 1999-06-23
TW434648B (en) 2001-05-16
GB2336721A (en) 1999-10-27
DE19918198A1 (en) 1999-12-09
CN1166002C (en) 2004-09-08
KR19990083441A (en) 1999-11-25
JPH11354794A (en) 1999-12-24
CN1234613A (en) 1999-11-10
DE19918198B4 (en) 2008-04-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20180423