GB2300514A - Protection of an electronic component from the voltages generated by a magnetic field - Google Patents

Protection of an electronic component from the voltages generated by a magnetic field Download PDF

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GB2300514A
GB2300514A GB8701991A GB8701991A GB2300514A GB 2300514 A GB2300514 A GB 2300514A GB 8701991 A GB8701991 A GB 8701991A GB 8701991 A GB8701991 A GB 8701991A GB 2300514 A GB2300514 A GB 2300514A
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component
conducting
output
conducting means
strips
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GB8701991D0 (en
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Christian Val
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Cimsa Sintra SA
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Cimsa Sintra SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Thermistors And Varistors (AREA)
  • Emergency Protection Circuit Devices (AREA)

Description

2300514
INTEGRATED DEVICE FOR THE PROTECTION OF AN EtEXTRONIC COMPONENT BY VARIABLE RESISTANCE FROM THE EFFECTS OF AN ELECTROMAGNETIC FIELD OR OF STATIC CHARGES
The object of the present invention is a device for the protection (or "hardening") of an electronic compo nent from the interference (voltages) generated by an external electromagnetic field, such as the wave known as "EMP" (the initials of the English expression Electro Magnetic Pulse) due to an atomic or nuclear disintegra- tion, or by an electrostatic field formed by charges introduced or created on the casing, during handling for e x a m p 1 e.
For purposes of simplification in the following description, the word " component" will refer to any discrete component or any assembly of components forming a hybrid or integrated circuit.
As is known, the presence of an electromagnetic or electrostatic field causes the appearance of voltages in a component which, when the field is very strong, can cause the breakdown and destruction of components. Protection from these parasitic voltages is therefor6 necessary. This protection is all the more difficult to achieve as, in certain cases, the field is capable of suddenly appearing, with a short risetime, which can, in certain cases, reach about ten nanoseconds, which is, for example, the case of the abovementioned EMP wave.
An attempt to produce such protection is known in which the circuit or component to be protected is enc Faraday cage. However, this orotection proves to be inadequate because these components neces sarily have electrical connections with the exterior and these connections form an antenna in the presence of external field and enable parasitic charges to enter n to the component to be protected.
The draining of the parasitic charges to the ex terior of the component by means of a varistor is also 1 o s e d known by the French Patent Application 81-17293. ing to this technique, a varistor material is arranged on the connections of the component to the exterior and, on. top of this varistor material, there is deposited an electrode connected #to the ground of the device. Consequently, in the presence of a voltage higher than a certain threshold on at least one of the connection of the component, the varistor material becomes conducting and this electrode finds itself connected to ground through the varistor material and the upper electroae:
the charges thus accidentally created'are drained to ground and do not penetrate into the component.
However, this structure has a of the high value of the permittivi tor materials (based on zinc oxid becomes more criticaL as the oper electronic circuits increase. Fu the increase in capacity causes an in Figure 1, the protective de in Figure 2, the previous figu in Figure 3, a F i gu re 1 in Figure 4, a high capacity because ty of the usual varis); this disadvantage ting frequencies of the thermore, as is known, increase in crosstalk between the connections of the component.
The object of the present invention is a protective device enabling the parasitic charges to be drained to the exterior, at each of the connections of the protected component, using a varistor type material in an integrated structure in the casing and such that it does not imply the insert v a 1 u e.
Other objects, tion will become apparent in the description give illustrated by the appended drawings which show: a top view of a first embodiment of vice according to the invention; a view in partial crosssection of re, along an axis XX; partial top view of a varian, o.; on of capacities of too high a eatures and results of the top view of a second embodiment i n v e n - b e L 0 W, of the protective device according to the invention; in Figure 5, a view in partial cross-section of the previous figure, along an axis YY; in Figure 6, a view in partial cross-section of Figure 4, along an axis ZZ.
The same references refer to the same elements n these various figures. Also, the true scale i used for reasons of clarity Figure 1 shows a top C provided witn a pluralit of this component to the e not neen 4n the explanation.
view of an e,.ectronic component y of pads 1 for the connectior.
xterior. By way of example, the component C is shown mounted on the base E of a "chip carrier" type casing; it is recalled that such is essentially characte is pins which are replaced lower surface of the base The base E therefore ing deposits 2 forming conn a c as in ized by the absence of connec y metallic pads, located on the (not visible in Figure 1). traditionally includes conductection tracks, extending radially towards the exterior of the casing and each ex- tending to the inside of half-holes 6, on the sides of the base, in order to be terminated on the connection pads of the casing. The other end of the enced 21, is connected by a connecting w of the component C. At least one of th referenced 3, is connected to the reference potential of the device (ground).
According to the invention, the base E also includes an electrode 4, substantially in the shaoe of a frame or square ring for example, deposited on the base E and cut out in such a way that it forms with the ends 21 of the tracks 2 a copLanar structure of interlocked combstype.
The sections of the electrode 4 enrerina oetween two encs 2 1 of the electrodes 2 are referenced 41. -lie elLectroce n a L 1 y, the device also includes a Layer of var s tor material V, represented in dot - and dash lines and deposited 4 is connected to ground by means of track 3. F i on the ends 21 and 41. This configuration is shown in Figure 2, which is a view in partial cross-section, along the axis X of Figure 1, at right angles to the electrode 4.
The casing enclosing the comoonent C also includes a cap, sealed on the base E according to any known tech nique; in Figure 1 its outline Ca has only been oarrial- ly shown outside the protective frame V-4. In a variant, the cap can be replaced by localized protection (substan- tially drop-shaped) made from plastic material for example; the frame V-4 can in this case be inside or outside of the protection.
As is known, a varistor material, which is generally formed from doped zinc oxide (doped with oxides of is bismuth, cobalt, chromium, molybdenum, antimony, etc), has a non- Linear resistance: it is not electrically con-, ducting when ends does no it becomes phenomenon ween the conducting state and the non-conduct very fast (it can be equal to or less than 1 material can be deposited in any known way: f siLk-screened on the support E of the compone this is made of ceramic or deposited, for examole by cathodic spraying, when this support is made of plastic.
The functioning of such a device is as follows: in the absence of an adequate external field (higher than a certain threshold), the signals supplies component by the varistor V, as tne varistor material is not conducting and therefore the electrode.' is isolated from the tracks 2. When the device finds itseLf subjected to an electromagnetic field, a potentia. diffe developed by the antenna effect between the the potential difference applied across its t exceed a certain voltage threshold (VC), and conducting beyond this threshold. As this is due to a field effect, the switching bet- and the Dower pass from tracks 2 and 3 to the pads 1 of the C without beina disturbed by electrode 4 nor r e n c e i s ends 21 of the tracks 2 and te ends 41 of the ground electrode 4. The e'ffect produced is the same in the case of charges of electrostatic origin, namely a potential difference between the ends 21 and 41. When this potential difference becomes greater than the threshold Vc of the material, it makes this material conducting, the effect of Connecting the tracks 2 to eac to ground through the electrode 4. The resu that the electrical charges thus created co not enter into the component C but are drained to the grouna of the levice, thus achieving the sought function of protection.
As is also known, the threshold voltage V. of a varistor depends on the thickness of the varistor and can therefore be chosen according to the strengths which is can be expected for the interfering fields when they are known. In all cases, the threshold VC must be higher than the highest of the working voLtages of the component C. In order to form an effective protection, it is clear that this voltage Vc must however be less than the breakdown voltage of the component and, preferably, as close as possible to its working voltage. However, technical considerations on manufacturing tolerance on the thickness of the layer forming the varistor can lead to the selection of V, in the order of two to three times the highest working voltage of the component.
By way of example, for a 5 volt working voltage of the comoonent, the value chosen for V, can be in the order of 20 to 25 the breakdown vol n e n t s.
varistor w h i c h h a s n other and L: 041 this is volts, which is a voltage lower than tage of most current electronic compo- As mentio of the capaci variable resi In fa c t, ends 21 3nd 41 j IS Of the form:
ned above, this structure enao ty introduced into the structu stance to be minimized. as is known, the capacity, c oetween!--.ie f the electrodes 2 and 4 (see:igure 2) es the jaue re by the C 0 af. ú - - e of the facing surfaces); where: F- is the dielectric constant of the varistor material V; s is the cross-section of the facing surfaces; (the thickness of the electrodes 2' and '$ by the length e is the thickness of the liat---,ial V nerween -.ne ends 21 and 41.
According to the invention, the fa the electrodes 2 and 4 are very small w what they are in a sandwich structure of known type described earlier, thus leading to a low value of the capacity c, while enabling an appearance of charges on any one of the electrodes 2 ground.
cing surfaces of ith respect to to be directly drained to By way of example, the dielectric constant s of a varistor material based on silk-screened zinc oxide is in the order of 10 2 to 4.10 2; in a sandwich structure, for an overlapping area in the order of 0.5 x 0.5 mm, (i.e. 25.10- 2 mm 2), capacities are obtained between 4 and 16 pF. In the coplanar structure according to the invention, for an electrode thickness in the order o to 10 Um and facing Lengths in the orde. of one miLlimeter, a section in the irder tained, i.e. about 25 to 50 and therefore the capacity, structure.
F i g u r e of Figure 1, In this figure, the base E bearing the component C and the tracks 2 connected (wires 5) to the pads the component are also present.
in this variant, tracks 14 are ptacen between tracks 2. one of the ends of each of tne tracks 14, stuated towards the exterior, is connected to grouna for example by means of a hole 15 made in the base E to of 5 to 10 -3 mm 2 is obtimes less for the section, than in the known sandwich 3 is a partial representa also seen from above.
tion of a variant a ground plane placed inside the thickness o f the base. The other end of the tracks 14 can be connected, as required, to the pads 1 of the component C.
The varistor material v is, in the present variant, deposited on the tracks 2 and 14 and not on their ends.
For clarity of description, the sections 22 and 16 of the tracks 2 and ends 21 and 41 o F ina 11 y, th will enclose th frame V have Cal and Ca2.
F igure 4 tive device a is Figures 5 and same. device, along axes Figure 4 shows, b 10 chip carrier" base as C at its center. 20 According to the invention, the protective formed by in the sh m a t e r i a 1 F igures a f i rst 6, taken covered by a second varistor material V2, which is itself covered by an electrode 8, taken to ground for example by track 3. These various decosits (V1, V2, 7 and 8) are preferaoLy of substantially the same shape. The varistor materials V1 and V7 can be the same; they can also be different and chosen for their physicaL characteristics, particularly c and V_ The cross-section axis YY of Figure 5 is taken naraLthe protective rings V1, V2, 7 and 8 and at righ: angles to these rings.
14 wnich carry out the function of the f Figure 1 have been cross-hatcned. e possible positions for the cap which e casing inside or outside of the varistor been represented by two simole dotted lines shows a second embodiment of the protecccording to the invention, seen from above; 6 show partial cross-section views of th YY and ZZ respectively. way of example, the same type of in Figure 1, bearing the component is a sandwich type structure, essentially aDe of a square ring, including a first V1, visible only in the cross-sections of 5 and 6, arranged on the tracks 2 and coverea by electrode 7, also visible only in Figures 5 and to a potential P. This latter electrode is dev i ce i s arranged varistor 1 e 1 to The cross-section axis ZZ of Figure 6 is taken perpendicular to the protective rings, at right angles to one of the tr ted to the poten ment of the conn The functi L c r:
V, 1 be the material forming layer V2; V257 be the ductors 2 and 7, tween the conduc difference betwe c27 be the of the conductors between the condu formed between rh el be the t be the thickness v be the ove which must make t tioned above, v c even 30 volts.
It is known given varistor ma The thickness el is a mul t iple of voitage or slight P is then chosen on a conductor 2 causing conductio In addition, layer V2 are chos slightly higher t Knowing, on acks 2, referenced 27, which is connectial P, in order to illustrate an embodiection of the electrode 7.
oning of this structure is 3S oiiljws.
threshold voltage of the variszjr the Layer V1, and V.2 be that of the potential difference between the conV78 be the potential difference betors 7 ahd 8 and V be the potential en conductors 2 and 8; capacity formed by the facing Darts 2 and 7, c78 be the capacity.tormed ctors 7 and 8, and c be the capacity e conductors 2 and 8; hickness of the layer V of the layer V2; rvoltage present on the conductors 2, he varistor sandwich conducting; as menan be in the order of 20 to 25 volts, or and ep threshold voltage (Vc) of a proportional to its thickness. such that the threshold V,1 that the t e r i al i is chose the voltage v, for example twice this ly Less than this. The potent.al equal to causes a n throug -v such that an overvoltage v voltage V27 equal to 2j, the varistor Layer V. t h e characte r i s t i c s o f t -i e v a r - s t o r en such that the threshold V,.) -5 han P, i.e. than v in the above exampLe. the one hand, that the value of a c a D a c i t y is proportional to the dielectric constant and to the facing conducting surfaces, and inversely proportional to the thickness of the dielectric and, on the other hand, that two capacities (cl and c2) in series form a voltage divider bridge, the varistor materials form s ing the layers V, and Vi are chosen such that the capa c i ty c2 i s large with respect to cl, for examol e 25 times or even more. The result is that the volt age V is very close to the voltage V27. By way of example, if v = 25 volts, V27 = 50 volts, V78 = 1 volt if cl L and therefore V = 51 volts, which is 2 30 effectively very close to the value of V27. When an overvoltage v exists on a conductor 2, there is then a potential difference V very close to 2v between the con- ductors 2 and 8, and therefore higher than the threshold Vc2- There will therefore be conduction through the structure 2-V1-7-V2-8.
In particular, this structure enables, by biasing (P) the intermediate electrode (7), a reduction in the cap- acity c between the connections(2) of the component to be protected and ground. In fact the resultant capacity c is written:
g As the capacity Now, cl has a va it would have in trode 7: in fact twice that which V1-8, for the va in the case of an in addition, manufactured mor Furthermore with three Level c c c 2 2 ETZ2- is negligible ue that is twic the absence of its thickness it would be in a istor material V1 to become conducting overvoLtage v on the eLectrode 2. a larger iaLue of e. enaD',es it to be e a S i L y. it should be no of conductors e compared with c2, c cl. e as Low as that which the intermediate elec e 1 i s i n t h i s c a s e simple structure 2- teci tnat such a structure nables a device to be 0 produced which provides triggering of a high voltage (between conductors 2 and 8) from a lower voltage (on conductor 2).
The above description has of course only been given by way of nonlimiting example. Thus, for example, tne layer of variscor material V could be arr3nced not oni.y over the tracks 2 and 4 (Figures 1 and 2) or 2 and 14 'Figure 3), but between these and!,ne oase E.
L,

Claims (10)

1. Device for the protection of an electronic component from the voltages generared by an external field, characterized in that it includes means of electrica! connection of varistor type (V, VI, V:)), whose ccndutivity increases under the effect. of the field, tihese means being arranged between the output connections '2) of the component (c), and conaucting means (4, 14, 8) connected on the one hand to the means of connection and on the other hand to means of evacuation of charges created by the field, the means of connection and the conducting means being arranged such that the said arrangement minimizes
2. Device that the conduc structure.
3. Device a that the coplana with the ends (2 component (C), conducting means nections (2).
4. Device according to Claim 2, characterized in that the conducting means (14) are arranged in conducting tracks alternated with the output connections (2) of the component (C), the means of connection (V) at least partly covering the conducting means and the output connec
5. Device according to Claim 1, characterized in that the means of connection include a first layer (V,) of varistor type material, depos i ted over the output connections (2) of the component (C, 3 first electrode (7), taken to a pre-defined potential (P), arranged above the first layer (V1), a second layer (V2) of jaristor tyce liaterial, the conducting means (8) being formed by a secona electrode arranged on the second Layer (V2).
the value of the capacities. according to Claim 1, characterized in ting means (4) are arranged in a coplanar ccording to Claim 2, characterized in r structure forms a comb interlocked (41) 1) of the output connections (2) of the the means of connection (V) covering tne (4) and the ends (21) of the output con-
6. Device according to Claim 5, characterized in that the varistor type materials (V1, V2) are different.
7. Device according to one of thle preceding claims, characterized in that the conducting means are arranged in the form of a frame around the component (11).
8. Device according to one of the oreceding c!,ai',ns, characterized in that the component (C) nc,,uaescorne:- tion pads (1), in that it is fixed on a base includ ing connection tracks (2) connected to!.,,he pads (1), the means of connection and the conducting means being ar ranged in the form of a frame around the component (C) over the tracks (2).
9. Device for the protection of an electronic component from the voltages generated by an external field substantially as described hereinbefore with reference to and as shown in Figures 1 and 2 or Figures 1 and 2 modified as shown in Figure 3, or Figures 4 to 6.
1 Amendments to the claims have been filed as follows CLAIMS 1. A device for the protection of an electronic component from the voltage generated by an external field, comprising connecting means having a conductivity which increases under the effect of the field, output strips for being electrically connected to input/output pads of the component, said connecting means being arranged between the output strips and conducting means electrically connected on the one hand to the connecting means and on the other hand to means of evacuation of charges created by the field, the output strips and the conducting means cooperating together as plates of capacitance means and being arranged so that the capacitance of said capacitance means is less than it would be if the capacitance means were formed between major surfaces of the output strips and the conducting means with intervening dielectric material consisting solely of the connecting means.
2. A device according to claim 1, wherein the conducting means and the strips are arranged in a coplanar structure.
:0 3. A device according to claim 2, wherein the conducting means forms a comb interleaved with the ends of the output strips, the connecting means covering the conducting means and the ends of the output strips.
4. A device according to claim 2, wherein the conducting means are arranged in conducting tracks alternated with the output strips, the connecting means at least partly covering the conducting means and the output strips.
5. A device according to claim 1, wherein the connecting means include a first layer of varistor type material, deposited over the output strips, a first electrode connected to a pre-defined potential and arranged above the lk - first layer, a second layer of varistor type material, the conducting means being formed by a second electrode arranged on the second layer.
6. A device according to claim 5, wherein the varistor type materials are different.
7. A device according to one of the preceding claims, wherein the conducting means are arranged around the component.
8. A device according to claim 3 or claim 5, wherein the conducting means are arranged in the form of a frame 0 around the component.
g. A device according to one of the preceding claims, wherein the component is fixed on a base, wherein the output strips are arranged on the base, the connecting means and conducting means being arranged around the component over the strips.
10. A device for the protection of an electronic component from the voltages generated by an external field substantially as described hereinbefore with reference to and as shown in figures 1 and 2 or figures 1 and 2 modified as shown in figure 3, or figures 4 to 6.
GB8701991A 1986-01-28 1987-01-29 Integrated device for the protection of an electronic component by variable resistance from the effects of an electromagnetic field or of static charges Expired - Fee Related GB2300514B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8601379A FR2726941A1 (en) 1986-01-28 1986-01-28 INTEGRATED VARISTOR PROTECTION DEVICE OF AN ELECTRONIC COMPONENT AGAINST THE EFFECTS OF AN ELECTRO-MAGNETIC FIELD OR STATIC LOADS

Publications (3)

Publication Number Publication Date
GB8701991D0 GB8701991D0 (en) 1996-04-24
GB2300514A true GB2300514A (en) 1996-11-06
GB2300514B GB2300514B (en) 1997-03-19

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GB8701991A Expired - Fee Related GB2300514B (en) 1986-01-28 1987-01-29 Integrated device for the protection of an electronic component by variable resistance from the effects of an electromagnetic field or of static charges

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DE (1) DE3702780A1 (en)
FR (1) FR2726941A1 (en)
GB (1) GB2300514B (en)
IT (1) IT8747549A0 (en)
SE (1) SE8700379A0 (en)

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FR2940521B1 (en) 2008-12-19 2011-11-11 3D Plus COLLECTIVE MANUFACTURING METHOD OF ELECTRONIC MODULES FOR SURFACE MOUNTING
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Also Published As

Publication number Publication date
SE8700379D0 (en) 1987-01-30
GB2300514B (en) 1997-03-19
FR2726941A1 (en) 1996-05-15
IT8747549A0 (en) 1987-01-22
GB8701991D0 (en) 1996-04-24
DE3702780A1 (en) 1996-07-04
SE8700379A0 (en) 1996-06-06

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