DE102007013986A1 - Optoelectronic component e.g. LED, has protective structure comprising material e.g. ceramic material or metal oxide e.g. zinc oxide, attached to structural element and/or to contact terminal, where material is provided as pasty mass - Google Patents

Abstract

The component (10) has a protective structure (5) comprising a material (7) with differential resistance in a voltage range lying above a cut-off voltage, exhibits a smaller value than in another voltage range, which lies below the cut-off voltage. The material is attached to a structural element (9) and/or to a contact terminal (1), and is provided in the form of a pasty mass, and the component comprises a housing (8). The material within the housing connects the terminal with another contact terminal (2). The material is made of ceramic material or metal oxide e.g. zinc oxide. An independent claim is also included for a method for manufacturing an optoelectronic component with a protective structure against over voltages.

Description

The The invention relates to an optoelectronic component with a protective structure against surges and a method for its production. Optoelectronic components For example, light-emitting diodes, laser diodes, photodiodes, semiconductor detectors or semiconductor sensors or other components in which an electro-optical effect is exploited. Own such components usually at least a first and a second contact terminal, over the during operation of the component, an electrical current through the component passed or at least applied an electrical voltage to the component becomes. The components can also more than two contact connections exhibit. The core of the electro-optical component is usually as Semiconductor body formed structural element, wherein in or on the semiconductor body a Plural of layers grown on each other and partly is structured. The utilization of the electro-optical effect takes place mostly in the semiconductor body. The first and the second contact connection can be used as additional, from Semiconductor body first be provided separate structural elements. For example, as in the case of a light-emitting diode in radial construction, the semiconductor body one of two contact terminals applied be with the contact terminals as metal support are formed. With the help of an additional wire can a Connection of the one contact terminal to a first area of the semiconductor body produced in a second area of its surface the other contact connection is mounted. The two contact connections protrude usually far beyond the semiconductor body and allow the mechanical and electrical connection of the optoelectronic component with a parent Building unit, such as a terminal.

The two contact connections can but also as arranged on the semiconductor body structure elements be educated. You can for example, by microelectronic methods, for example Schichtabscheideverfahren and structuring method formed on the semiconductor body be.

In front all in the case of massive, trained as a metal carrier, for example Contact connections whose Size in the Usually exceeds the size of the semiconductor body, it is often common first a single carrier element to produce later a predetermined predetermined breaking point is separated, the two remaining halves then the two contact connections or at least partial structures of the two contact terminals of form optoelectronic device. For example, on this Make a semiconductor body be applied to a first region of a support element, conducting over a jumper with a second region of the carrier element (For example, a U-shaped or H-shaped carrier element) be connected and then the support element including semiconductor body in a plastic housing be poured. In a protruding from the housing part of support element Then a bridge between two halves of the support element later removed, whereby two separate contact terminals of the component arise.

No later than at this time, the optoelectronic device is susceptible to overvoltages, the significantly over the intended operating voltage of typically 2 to 4 volts lie. When handling the component for measurement purposes for the electrical functional test as well as the installation of the component in a terminal can short-term Power surges at very high voltages occur. So are for optoelectronic components withstand voltages for until to 2000 volts opposite the "Human Body "influence required, where the component is up to the height this voltage, in series with a series resistor of 1.5 kΩ or one capacity of 100 pF, at least for a short time withstand the electrical load got to.

For this are ESD devices (electrostatic devices) commercially, for example Protection diodes, which are parallel and / or in anti-parallel to the optoelectronic Component connected to the outer contact terminals can be as long as the component is not yet finally mounted.

Of the Use of such commercially available Devices for warranty the transient ESD withstand voltage elevated however, the cost of the optoelectronic component. Furthermore, additional work steps for Mount and later Disassembly of the ESD protection devices required.

It the object of the present invention is an optoelectronic To provide a component and a method for its manufacture, with which a surge protection the optoelectronic component cheaper and less labor intensive achievable is.

• – wobei das Bauteil zumindest einen ersten Kontaktanschluss, einen zweiten Kontaktanschluss und weitere Strukturelemente aufweist und
• – wobei die Schutzstruktur ein Material aufweist, dessen differenzieller Widerstand in einem ersten Spannungsbereich, der oberhalb einer Grenzspannung liegt, einen kleineren Wert besitzt als in einem zweiten Spannungsbereich, der unterhalb der Grenzspannung liegt,
• – wobei das Material auf die Strukturelemente und/oder auf die Kontaktanschlüsse aufgebracht ist.

This object is achieved according to the invention by an optoelectronic component with a protective structure against overvoltages,

• - Wherein the component has at least a first contact terminal, a second contact terminal and further structural elements, and
• - wherein the protective structure comprises a material whose differential resistance in a first voltage range, which is above a threshold voltage, has a smaller value than in a second voltage range below the limit voltage is,
• - Wherein the material is applied to the structural elements and / or on the contact terminals.

According to the invention, it is provided that on the contact connections the optoelectronic component or another structural element of the optoelectronic component, for example a semiconductor body Material applied with a differential ohmic resistance is, which decreases above a certain voltage range, so that the material for strong surges becomes conductive or at least low impedance. The material, preferably directly to the respective structural elements and / or contact terminals of optoelectronic component is applied (or via thin, conductive adhesive layers or adhesive layers attached to them), requires no elaborate Assembly of a commercially available to acquire the ESD protection element, but in the simplest case as pasty Mass be applied during the manufacture or thereafter applied by any suitable method becomes. The material applied in this way does not even have to have a given shape; as pasty mass it can be present on existing surface areas the contact structures to be covered, semiconductor body or pressed on other structural elements of the optoelectronic device, pressed, imprinted or be nestled in any other way. Also as a preformed particle, that has already hardened, for example For example, it can be easily sintered on exposed surfaces from contact connections applicable, optionally with the aid of an adhesive layer or adhesive layer. Independently of the application form of the material, be it as a pasty mass, as a preformed particle or in any other form, provides the material a far simpler and cheaper solution than a pre-fabricated, of several structures (electrodes, resistance interlayers, Protective housings, etc.) previously manufactured and available for sale to be acquired ESD protection element. The overvoltage protection achieved with it is also more reliable reachable as there are no unknown, unchecked internal contact transitions between various structures of a commercial, many structures formed ESD protection element question the functionality. Instead of this is the material according to the invention on the critical, sensitive to overvoltages Areas of at least one or more structural elements or components or other (separate or interconnected) elements of the optoelectronic component applied. By direct pressing or press on there is a continuous contact connection, for example between two contact connections of the optoelectronic component or over a region of a semiconductor body an n-doped and a p-doped layer adjacent to each other. Furthermore allows the directly applied material especially if it as pasty Mass is applied, the simple and inexpensive mounting of a conductive, for example, metallic body, in the case of an already existing overvoltage the conductivity the protective structure still increased.

The Material monotonous with at least a certain voltage range For example, decreasing differential resistance may be above a boundary voltage becomes increasingly low to conductive while it is below the threshold voltage high impedance, that is dielectric. For example The ohmic resistance of the material may be above a threshold voltage by a factor of one power of ten or two or more powers of ten lose weight. But also materials with a minor one Decrease in differential resistance by the value of only 2 or 5 can be enough be to electro-optical device even more reliable against surges to protect and thus easier to sell close. The differential resistance does not have to be whole Range of applied voltages from zero volts to overvoltage for example, be monotonically decreasing between 1 and 2000 volts. It is enough if a bigger and a smaller value of applied voltages exists, with the larger value an overvoltage matches and the material, if at him a the greater value corresponding overvoltage is applied, a lower differential ohmic resistance shows as when applying a voltage whose height corresponds to the smaller value.

It is preferably provided that the material is provided in the form of a pasty mass whose outer shape is at least partially predetermined by the surfaces of the structural elements and / or contact structures to which the material is applied. If z. B. pressed the material as a pasty mass on two metallic contact terminals, so the pasty mass nestles against the surface of the contact terminals, so that the outer shape of the pasty mass at least partially follows the structure of the contact terminals. Under a pasty mass is here any deformable at least in the original state mass, which can also be subsequently hardened after application, for example, may have been sintered. On the basis of the outer shape and surface of the mass, however, it can be seen that the material originally did not have a predetermined shape but was applied as a drop, paste, liquid, highly viscous medium or in another initially freely deformable state. In contrast, in the case of a preformed particle, the entire surface of the particle is predetermined by processing steps and usually follows clearly defined, mostly angular structural boundaries. The processing steps required for this are eliminated in the preferred embodiment of the pasty mass.

Preferably is provided that the material in contact with the first contact terminal and is arranged with the second contact terminal. This will be both contact connections interconnected, but not shorted, so long no overvoltage is applied above the threshold voltage. Only when there is an overvoltage does the material close or the pasty mass both contact connections short and protects each other Thus, the optoelectronic device from permanent damage. Even with the material decreasing differential resistance at high Voltages applied to the component can be electrical Measurements for the function test or even handling steps without damaging the Component without distortion the measurement by the material.

Preferably it is envisaged that the material with the smaller at high voltages expectant differential resistance to a surface area a structural element of the component is applied to the first contact connection and to the second contact connection. For example, can the material or the pasty mass on the surface of a Semiconductor body be applied where from one contact terminal to the other other contact connection is sufficient.

Preferably is provided that the material or the pasty mass or the preformed particle directly on areas of the surface of the Structural elements and / or the contact terminals is applied. By the immediate touch unnecessary adhesive or adhesive layers; the pasty mass can, for example to be touched surfaces be pressed on, printed or pressed. Likewise, the material epitaxially or otherwise on the respective structures be isolated.

According to one embodiment it is provided that the optoelectronic component has a housing and that the material within the housing is the first contact terminal connects to the second contact terminal. Alternatively, it can be provided be that the optoelectronic component has a housing and that the mass outside of housing partially applied to the first and the second contact terminal is. The inside of the case arranged protective structure does not need to be removed later and protects the Component during its entire lifetime against surges. Conversely, are outside of the protective housing applied protective structures easily removable and the strength of adhesion to the exposed contact structures during the production to the purpose a problem-free replacement of the material.

Preferably is provided that the material at overvoltages above the Limit voltage the two Kontaktstruktu ren short-circuits each other. in this connection the material not only becomes low-ohmic, but conductive; of the Ohmic resistance drops to virtually zero.

According to one embodiment can the first and second contact structures are preformed metal supports, wherein the optoelectronic component has a semiconductor body, which is applied to one of the two metal carrier and wherein the Material applied to areas of the metal carrier outside the semiconductor body is.

The Material can, especially if it is a preformed particle is formed, with the aid of an electrically conductive adhesive layer or adhesive layer on the structural elements, such as the contact terminals and / or the semiconductor body of the be applied electro-optical component. The adhesive layer provides the mechanical connection is secure, but it can be that they still easy subsequent detachment of the preformed particle ensures that no residue on the contact terminals remain.

A Continuing provides that the material from one area electrically conductive layer coated is spaced from the first contact structure and from the second contact structure is arranged. The additional electrically conductive layer can first the whole area on still exposed surface areas of the invention used Materials have been applied and then in the immediate Environment of the contact connections have been removed again. The electrically conductive layer is in contrast to the material even at low voltages electrically conductive and increased still the conductivity the protective structure.

The conductive However, layer should be spaced from the contact terminals so as not to short-circuit at voltages of the order of magnitude To allow operating voltages.

Another development provides that a preformed metal body or another electrically conductive molded body is arranged on the pasty mass, which is arranged at a distance from the first and the second contact structure. The preformed metal body also allows for even more reliable overvoltage protection but in contrast to thin layers applied with semiconductor integrated circuit fabrication techniques, can be used to press the pasty mass itself against the contact pads to be contacted or the semiconductor body or other structural elements of the electro-optic device. Accordingly, it is preferably provided that the pasty mass is pressed between the contact structures and the preformed metal body or, alternatively, is pressed between a semiconductor body of the component and the preformed metal body. Further, the metal body is preferably disposed on a surface portion of the pasty mass spaced from the conductive contact terminals.

The Material with decreasing ohmic resistance can also be used on only one surface area a semiconductor body be applied, for example, to a transition between a p-doped and an n-doped layer of the semiconductor body. In this context are grown on a substrate or a chip layers as part of the semiconductor body considered, so that layer stack and semiconductor substrate to be considered Semiconductor body belong.

Regarding of the material, which at sufficiently high surges a decreasing ohmic Resistance, in particular resistive resistance possesses, comes in particular a ceramic material, for example a metal oxide in question. The material may be zinc oxide, for example. The material can Furthermore be sintered, while it is during the sintering has come to a solids turnover is where the surface is melted on a variety of compressed body or on other way was converted and due to the temperature treatment, no later than after cooling, a continuous mass of firmly connected with each other grains or forms aggregates. The material can be applied at voltages of up to 4 volts, preferably of up to 10 volts dielectically, d. H. be insulating while it with overvoltages in the order of magnitude electrically conductive by a few hundred or a few thousand volts or at least low impedance. In particular, it may be provided that the material is selected is that the ohmic resistance in a first voltage range by a factor greater than 10, preferably greater than 100 is smaller than in a second voltage range of the order of magnitude Operating voltages corresponds.

The used according to the invention Material thus has the properties of a varistor, i. H. it owns a voltage-dependent changeable ohms Resistance (in particular differential resistance), whereby the differential resistance decreases especially with increasing voltage.

The Material can be both pasty or at least in the original one Condition still deformable mass or as a preformed particle on the contact structures and / or the semiconductor body or applied the other structural elements of the optoelectronic device be. In particular, it is provided that the invention against overvoltages secured optoelectronic component a light emitting diode, a laser diode, a photodiode, a semiconductor detector or a semiconductor sensor.

alternative or additionally can the optoelectronic device instead of or in addition to the described above, with the help of pasty mass or preformed Particles reached overvoltage protection also have a micromechanical switching element, the one Switching on and off the overvoltage protection allows.

Accordingly the invention is further solved by an electro-optical component with a protective structure against overvoltages, wherein the component comprises a semiconductor body, a first contact terminal and a second contact terminal, and wherein the protective structure a in the semiconductor body integrated micromechanical switching element comprises.

With Help of the integrated micromechanical switching element can be a electrically conductive connection between the two connection contacts Depending on the switching state, they are made or interrupted, depending on Whether the switching element is switched on or off. At conducting switched micromechanical switching element, the outer contact terminals with each other short-circuited and parallel to the actual microelectronic Component or that area in which the electro-optical Effect is exploited. The present embodiment has the advantage that the micromechanical switching element reversible and arbitrary often repeatable conductive and blocking switchable. In particular, can the switching element having two conductor tracks, wherein the one conductor track to the first contact terminal and the other conductor to the second Contact connection of the component leads. The switching element can optionally the two tracks together connect or disconnect, for example with the help of a electrically, electrostatically or magnetically deformable bridge in shape a supernatant substrate piece or layer area. By changing the height position the outer end let yourself an electrical contact of the outer end produce with a corresponding mating contact depending on the switching state or interrupt.

So For example, it may be provided that the micromechanical switching element an electrostatically deformable, over a cavity, a depression or a surface area protruding from the semiconductor body Contact element has. This contact element can bridge-like, web-like or otherwise in a lateral or other direction relative protruding to the substrate surface be; In particular, with the help of the contact element is a side projecting area provided, whose function by applying suitable voltages slightly variable is. For example, below a laterally protruding Contact element can be arranged a conductor track whose potential variable is to electrostatically attract the contact element. For example can in the switched state without biased trace a contact between the first and the second contact terminal be made permanently, whereas when creating a suitable Bias to the running below the contact element trace the contact element is bent towards the track and thereby the Short circuit between the two contact connections is interrupted.

Preferably it is provided that the contact element has an outer end, whose Position is electrostatically or magnetically changeable. The outer end can be a hollow, overhanging one Area of particularly small dimensions, in particular layer thickness which thereby becomes flexible within certain limits.

Preferably it is envisaged that the contact element with an electrical Potential is biased and depending on the amount of biasing electrical Potentials is mechanically deformable. For example, a in terms of amount Bias an increasing deflection of an outer end of the contact element cause.

Preferably is provided that the contact element either in a deformed Condition or in a non-deformed state, the first contact terminal conductively connects to the second contact terminal. The component with switched contact terminal can be safely handled or be transported. The micromechanical switching element or The contact element may also be additional to the other, with the help of pasty mass or preformed Particles formed protective structure be provided.

• – Herstellen einer Mehrzahl von Strukturelementen für ein optoelektronisches Bauteil, wobei die Mehrzahl der Strukturelemente zumindest einen Halbleiterkörper, einen ersten Kontaktanschluss und einen zweiten Kontaktanschluss umfasst, und
• – Aufbringen eines Materials, dessen elektrischer differenzieller Widerstand in einen ersten Spannungsbereich oberhalb einer Grenzspannung einen kleineren Wert besitzt als in einem zweiten Spannungsbereich unterhalb der Grenzspannung, auf zumindest einige der Strukturelemente.

The object on which the invention is based is furthermore achieved by a method for producing an optoelectronic component having an overvoltage protection structure, the method comprising the following steps:

• - Producing a plurality of structural elements for an optoelectronic device, wherein the plurality of structural elements comprises at least one semiconductor body, a first contact terminal and a second contact terminal, and
• - Applying a material whose electrical differential resistance in a first voltage range above a threshold voltage has a smaller value than in a second voltage range below the threshold voltage, at least some of the structural elements.

The Structural elements mentioned here are those that make up the optoelectronic Component is composed. A first structural element is, for example the semiconductor body; two further structural elements are represented by the first and the second Contact connection formed. Other structural elements can be, for example a connecting wire between one of the contact terminals and the Semiconductor body or also individual structures of a semiconductor body. For example can one to the surface of the semiconductor body reaching pn junction covered by the material, the one with increasing tension has decreasing differential resistance.

Preferably is provided that the material in the form of a pasty mass is applied to at least some of the structural elements, wherein the outer shape the pasty one Mass through the surfaces the structural elements is given, to which the pasty mass is applied.

Preferably it is envisaged that the material at least on a surface area of the semiconductor body is applied. Furthermore, it is preferably provided that the Material between the first contact terminal and the second contact terminal as overvoltage protection between both contact connections is applied. The material may, for example, on a substrate area, the disposed between the positions of arranged thereon first and second contact terminals is applied, so as to contact each other with each other connect to.

Preferably is provided that the material as pasty mass at first and the second contact terminal and / or or pressed onto the semiconductor body or printed.

According to one alternative embodiment provided that from the material first a preformed particle is formed on the first and the second contact terminal and / or on the semiconductor body glued, bonded or soldered becomes.

Preferably it is envisaged that the material after application to at least some of the structural elements is sintered.

A Continuing training provides that after applying the material on at least some of the structural elements on an electrically conductive layer a part of the surface of the material is deposited. Alternatively it can be provided that while the application or after the application of the material formed from the material pasty Mass a preformed metal body on the pasty Mass is pressed. In the embodiment serve, the Current load of the current flowing through in the event of an overvoltage Reduce material and an even better conductive connection along a major part allow the dimensions of the material. However, it should the preformed metal body or or the electrically conductive layer is not to those to guide Ingredients come close to that by the material before overvoltage to protect are, otherwise the mass with increasing differential resistance itself would be bridged.

Preferably is provided that with the help of the material a light emitting diode, a Laser diode, a photodiode, a semiconductor detector or a semiconductor sensor against surges is protected. After all can be provided that after the completion of the optoelectronic Component is carried out an electrical functional test on the component, in which the protective structure formed of the material on the component remains. After all it can be provided that the protective structure formed from the material only when installing the optoelectronic component in a terminal of the optoelectronic component is removed.

The Invention will be described below with reference to the figures. Show it:

1 A first embodiment of an optoelectronic component according to the invention with a protective structure against overvoltages,

1A a section of a side detail view of the protective structure according to the invention in 1 .

2 A second embodiment of an optoelectronic device according to the invention,

3 A third embodiment of an optoelectronic device according to the invention,

4 A fourth embodiment of an optoelectronic device according to the invention and

5 an exemplary profile of the resistance of a material used as a protective structure in response to an applied voltage.

1 shows a schematic cross-sectional view of an optoelectronic device according to a first embodiment. Shown is a LED (Light Emitting Diode) in a radial design. The component 10 consists of several structural elements 9 namely, a first contact terminal 1 , a second contact terminal 2 and a semiconductor body 3 in which the optically active layers are arranged. According to the embodiment of the 1 are the first and the second contact connection 1 . 2 as a metal carrier 13 formed, wherein the semiconductor body 3 mounted on the metal support of one of the two contact terminals. The electrical connection between the first contact connection 1 and the semiconductor body 3 is through a connecting cable 14 produced. In this respect, the first contact connection comprises 1 both the metal carrier 13 as well as the connection line 14 , The first and the second contact connection 1 . 2 contact two opposite major surfaces of the semiconductor body 3 , The two metal carriers 13 , the semiconductor body 3 and the connection line 14 are in a housing 8th poured, which is permeable to the radiation to be emitted. Outside the case 8th can be a separation area 12 be provided on the two contact terminals are initially formed together contiguous. The separation area 12 forms a predetermined breaking point after the production of the optoelectronic component 10 is selectively cut to a pair of two separate Me tallträger 13 to obtain the first and the second contact terminal.

According to the invention, the first and the second contact connection 1 . 2 each with a protective structure 5 in the form of a pasty mass 6 or a preformed particle 20 connected with each other. This compound is electrically insulating under normal voltages in the order of the operating voltage or up to voltages of a few tens of volts, since the material 7 the protective structure 5 is dielectric in these voltage ranges. The material 7 as a pasty mass 6 or as a preformed particle 20 is applied, ranging from the first contact connection 1 to the second contact connection 2 and is attached to them either directly or through a thin adhesive layer or adhesive layer. The one from the material 7 formed protective structure 5 can be either inside the case 8th be arranged, wherein they then permanently during the operation of the optoelectronic device 10 remains, or outside the case 8th be arranged. In the latter case, it may be prior to installation of the optoelectronic device 10 be removed in a terminal. The protective structure 5 serves as protection against overvoltages. It achieves this effect due to the material properties of the material 7 , which has a differential and / or absolute resistance, at least in a voltage range below a limit tension is so great, so the material 7 practically dielectric, ie insulating. Only above a threshold voltage or at much higher voltages, as typically arise only by static charge, such as in the handling of the optoelectronic device by humans, the differential and / or absolute resistance decreases; the material 7 becomes electrically conductive or at least low impedance.

Thus, the material possesses 7 greater electrical conductivity at high voltages than at lower voltages. The boundary between the dielectric and the conductive or low-resistance state will usually be fluent; a transition voltage between the two regions may for example be between 10 and 500 volts, preferably between 50 and 250 volts.

At voltages equal to normal operating temperatures and a few volts, the material is 7 electrically insulating and affects the functionality of the optoelectronic device 10 therefore not. The protective structure 5 with the material 7 can therefore be permanently in the housing 8th remain. However, as a result of the handling of the electronic or optoelectronic component, a static discharge with voltage peaks of between 500 and 2000 volts, the component is usually damaged and destroyed. The inventively provided protective structure 5 However, this destruction prevents, since it is conductive or at least low impedance at such high voltages and the short-circuit current occurring parallel to the actual optical component, here parallel to the semiconductor body 3 , redirects and thereby protects the semiconductor body. The protective structure can also be outside the case 8th be arranged; It protects the component from static discharges before and during handling and can be easily removed during final assembly.

The material 7 can be applied as pasty mass, which is initially arbitrarily deformable and therefore can be applied by pressing, pressing or printing. The material 7 can be melted as pasty mass in the housing or alternatively also cured, in particular sintered, whereby then its outer shape is fixed. Depending on the outer shape but also on the finished component recognizable whether the material 7 has been applied as a preformed particle or as initially arbitrarily deformable mass, such as paste or pasty mass.

Alternatively, from the material 7 a preformed, for example, elongated particles are formed and then optionally sintered, for example. The preformed, then dimensionally stable molded part or particle can then by pressing, pressing or with the aid of an adhesive layer or adhesive layer, which should be each electrically conductive, on the structural elements to be contacted, such as the contact terminals 1 . 2 be applied.

1A shows a development of the protective structure 5 out 1 , Shown is an auschnittweise cross-sectional view through the contact terminals 1 . 2 from its lower end in 1 seen here. According to 1A became the material 7 as a pasty mass 6 on and between the contact connections 1 . 2 applied, wherein for pressing the pasty mass 6 to the contact connections 1 . 2 a metal body 16 was used, which also after pressing permanently on the material 7 remains. The metal body serves to further improve the electrical conductivity of the protective structure 5 at high voltages to the material 7 not to overload too much. The metal body 16 However, it is not connected to either the first contact structure or the second contact structure since the protective structure 5 at low voltages in the range of, for example, to be at most 10, 25 or 50 volts electrically insulating. Therefore, the metal body should 16 from all through the protective structure 5 be spaced apart, ie should not come close to this. Instead of in 1A imaged massive metal body 16 it is also possible to provide a conductive layer which likewise does not extend as far as the structural elements to be connected to one another 9 should be enough. At least one of the two contact connections 1 . 2 such a conductive layer must be spaced apart.

2 shows a second embodiment of an optoelectronic or electronic component according to the invention 10 , The component 10 has a semiconductor body 3 with a plurality of layers, including, for example, a p-doped layer 17 and an n-doped layer 18 on. According to the embodiment of the 2 are the first contact connection 1 and the second contact terminal 2 on a small part of the surface (for example, the main surface) of the semiconductor body 3 arranged. The two contact connections 1 . 2 may be formed as bond pads, solder connections or other integrated connection structures and also comprise bonding wires, solder wires or other away from the flat contact areas conductor tracks. According to the embodiment of the 2 is the protective structure according to the invention 5 that as well as in 1 preferably from a pasty mass 6 exists on a surface area 4 this semiconductor body 3 applied, in such a surface area 4 that from the first contact terminal 1 to the second contact connection 2 enough and both contact connections in Trap of overvoltages, which normally destroy the component, conductively short-circuits each other and a parallel current path to the semiconductor body 3 represents. Optionally, the protective structure 5 furthermore a conductive layer 15 include, at least partially, on the material 7 the pasty mass 6 is applied, but not simultaneously to both contact terminals 1 . 2 may come close. The conductive layer 15 increases the conductivity of the protective structure in case of overvoltages and preserves the pasty mass 6 from degradation due to static discharge resulting from overvoltage.

3 shows a third embodiment of an optoelectronic or electronic component according to the invention 10 in which the protective structure 5 on a semiconductor body 3 is arranged, but does not come close to contact terminals, but a different surface area 4 covered by a semiconductor body. In the example of 3 For example, a pn junction between a p-doped layer 17 and an n-doped layer 18 with a pasty mass 6 from the material 7 covered with the above-described conductivity behavior of the (in particular differential) resistance. In addition, optionally, a conductive layer 15 , For example, a metallic layer are applied, which in the case of overvoltages then the at least low-resistance material of the pasty mass 6 relieved of excessive current consumption. In 3 are a first 1 and a second contact terminal 2 and their arrangement shown by way of example only; it is only essential that the protective structure provided according to the invention 5 also other structural elements than the two contact terminals 1 . 2 cover and protect against overvoltages.

The material 7 the protective layers according to the embodiments of the 1 to 4 is in particular a varistor material, ie a material whose electrical resistance is variable and in particular depends on the voltage applied to the material itself. This voltage is in the case of a normal, proper operation of an electronic or optoelectronic device not greater than a few volts, at most a few tens of volts; In this range, the varistor material is electrically insulating and has no influence on the electrical function of the respective component. Only at high voltages, such as typically occur for a short time during the duration of a few milliseconds or microseconds, from over a few 100 volts to 2000 volts, for example, the varistor material behaves electrically conductive or at least low impedance and therefore performs the short-circuit current on the actual device, usually on the semiconductor body, past.

4 shows a fourth embodiment of an optoelectronic component according to the invention. According to 4 the optoelectronic component has a micromechanical switching element 25 on, for example, a in a semiconductor body 3 or on this can be as an integrated switch. The micromechanical switching element 25 has, for example, a contact element 26 which makes contact with a further region of the semiconductor body, for example a mating contact at an open, outer end 27 of the switching element 26 can produce. Whether the switch element makes this contact or not, for example by means of electrostatic attraction, magnetostatic or otherwise controllable, for example by electrostatic attraction between the contact element 26 and one below a depression 30 arranged conductive layer structure 31 , So will be above a minimum voltage between the conductive structure 31 and the contact element 26 is applied, a mechanical deformation of the contact element 26 causes the outer end 27 of the contact element 26 from a mating contact layer, namely, for example, a conductor track 32 is pulled away and thereby the otherwise maintained current path between, for example, a first contact terminal 1 and a second contact terminal 2 interrupts.

This current path is preferably using second tracks 33 between the two contact connections 1 . 2 manufactured, whereby one of the two conductor tracks 33 on the contact element 26 can be arranged and the other conductor track 33 from the outer end 27 of the contact element 26 to the second contact connection 2 enough. The tracks 33 are formed of a conductive material, such as a metal or a metal alloy. conductor tracks 33 made of a material 7 can be used as well with the material properties described above, in particular with the described, voltage-dependent electrical resistance. Thus, the embodiment of the 4 be combined with each embodiment of the remaining figures, claims or other parts of description of the present application.

The micromechanical switching element 25 , For example, that of the embodiment of 4 , makes it possible by electrical switching, not only at overvoltages of a few 100 or 1000 volts, but also at much lower voltages in the range of operating voltage, an electrically conductive, short-circuiting connection between the outer contact terminals 1 . 2 an electronic or optoelectronic device 10 manufacture. Thus, the component by electrically driving the micromechanical switching element 25 from destructive over tensions are protected. The micromechanical switching element 25 thus forms an electrostatic ESD circuit breaker.

According to 4 is the contact element 26 as in the lateral direction, ie parallel to a main surface of the semiconductor body 3 running web formed. Any other embodiments are also conceivable. According to 4 Furthermore, a mating contact is formed by a further, also in the lateral direction projecting region, in the undeformed state of the contact element 26 is touched by this. The mating contact and the outer end of the contact element 26 thus each form over a depression 30 , a cavity or other type of recess.

5 shows schematically and simplifies the voltage dependence of the material, which is useful for the protection structure according to the invention for protection against stress. This material can be like in 5 represented have a differential resistance Rd, which is relatively large at low voltages in a voltage range U2 below a threshold voltage Ug and decreases in a voltage range U1 above the threshold voltage Ug by one or more orders of magnitude. Even if the decrease of the differential resistance is smaller than a power of ten, for example only by a factor of, for example, 5, smaller, such a protective structure can be sufficient to achieve an increased short-circuit safety of an electronic or optoelectronic device against static discharges. For in this way depending on the level of the applied voltage electrically insulating or electrically conductive (or at least low-resistance) material 7 For example, a ceramic material, in particular an oxidic material such as zinc oxide or silicon dioxide. By direct application or application of this material to the structure to be interconnected in the event of a short circuit eliminates the need to purchase specially manufactured components for ESD protection, for mounting (for example, by soldering) and before the final assembly of the component by further elaborate processing steps again remove. The inventively applied as pasty mass or as pre-shaped particles or moldings material requires no time-consuming handling steps and can remain permanently on or in the optoelectronic component due to the voltage dependence of its ohmic resistance.

Consequently the present invention achieves a simpler and cheaper Protection of any electrical and electronic, in particular microelectronic and optoelectronic components against short-circuit voltages in handling the component or or in any kind of overvoltages above the operating voltage. In particular, light-emitting diodes, laser diodes, photodiodes, Semiconductor detectors, semiconductor sensors or other, even more complex integrated semiconductor circuits in the manner according to the invention against overvoltages protected become.

Claims (49)

Optoelectronic component ( 10 ) with a protective structure ( 5 ) against overvoltages, - whereby the component ( 10 ) at least one first contact terminal ( 1 ), a second contact terminal ( 2 ) and further structural elements ( 9 ) and - wherein the protective structure ( 5 ) a material ( 7 ) whose differential resistance (Rd) has a smaller value (R1) in a first voltage range (U1) which is above a limiting voltage (Ug) than in a second voltage range (U2) which lies below the limit voltage (Ug) , - where the material ( 7 ) on the structural elements ( 9 ) and / or on the contact connections ( 1 . 2 ) is applied. Component according to claim 1, characterized in that the material ( 7 ) is provided in the form of a pasty mass whose external shape is at least partially defined by the surfaces of the contact structures ( 1 . 2 ) and / or the further structural elements ( 9 ) to which the material ( 7 ) is applied. Component according to claim 1 or 2, characterized in that the material ( 7 ) in contact with the first contact terminal ( 1 ) and with the second contact terminal ( 2 ) is arranged. Component according to one of claims 1 to 3, characterized in that the material ( 7 ) to a surface area ( 4 ) of a structural element ( 9 ) of the component ( 10 ) is applied to the first contact terminal ( 1 ) and to the second contact terminal ( 2 ). Component according to one of claims 1 to 4, characterized in that the material ( 7 ) to a surface area ( 4 ) of a semiconductor body ( 3 ) is applied. Component according to one of claims 1 to 5, characterized in that the material ( 7 ) directly on areas of the surface of the structural elements ( 9 ) and / or the contact connections ( 1 . 2 ) is applied. Component according to one of claims 1 to 6, characterized in that the optoelectronic component ( 10 ) a housing ( 8th ) and the material ( 7 ) within the housing ( 8th ) the first Kon clock connection ( 1 ) with the second contact terminal ( 2 ) connects. Component according to one of claims 1 to 6, characterized in that the optoelectronic component ( 10 ) a housing ( 8th ) and the material ( 7 ) outside the housing ( 8th ) in some areas to the first ( 1 ) and the second contact structure ( 2 ) is applied. Component according to one of claims 1 to 8, characterized in that the material ( 7 ) at overvoltages above the limit voltage (Ug) the first contact structure ( 1 ) with the second contact structure ( 2 ) short circuits. Component according to one of claims 1 to 9, characterized in that the first ( 1 ) and the second contact structure ( 2 ) preformed metal supports ( 13 ), wherein the optoelectronic component ( 10 ) a semiconductor body ( 3 ), which on one of the two metal carrier ( 13 ), and wherein the material ( 7 ) on areas of metal supports ( 13 ) outside the semiconductor body ( 3 ) is applied. Component according to one of claims 1 to 10, characterized in that the material ( 7 ) by means of an electrically conductive adhesive layer on the structural elements ( 9 ) and / or the contact connections ( 1 . 2 ) is applied. Component according to one of claims 1 to 11, characterized in that the material ( 7 ) in regions of an electrically conductive layer ( 15 ) which is spaced apart from the first contact structure ( 1 ) and the second contact structure ( 2 ) is arranged. Component according to one of claims 2 to 11, characterized in that on the pasty mass ( 6 ) a preformed metal body ( 16 ) spaced from the first one (FIG. 1 ) and / or the second contact structure ( 2 ) is arranged. Component according to claim 13, characterized in that the pasty mass ( 6 ) between the contact structures ( 1 . 2 ) and the preformed metal body ( 16 ) is pressed. Component according to claim 13 or 14, characterized in that the material ( 7 ) between a semiconductor body ( 3 ) of the component ( 10 ) and the preformed metal body ( 16 ) is pressed. Component according to one of claims 1 to 15, characterized in that the material ( 7 ) on a semiconductor body ( 3 ) in a surface area ( 4 ) spaced from the first contact terminal (12) 1 ) and from the second contact terminal ( 2 ) is arranged. Component according to one of claims 1 to 16, characterized in that the material ( 7 ) a p-doped layer ( 17 ) of a semiconductor body ( 3 ) with an n-doped layer ( 18 ) of the semiconductor body ( 3 ) connects. Component according to one of claims 1 to 17, characterized in that the material ( 7 ) of a sintered material ( 7 ) is formed. Component according to one of claims 1 to 18, characterized in that the material ( 7 ) is formed of a ceramic material. Component according to one of claims 1 to 19, characterized in that the material ( 7 ) is formed from a metal oxide, for example zinc oxide. Component according to one of claims 1 to 20, characterized in that the material ( 7 ) above one on the pasty mass ( 6 ) applied voltage limit (Ug) of 4 volts, preferably 10 volts electrically conductive or at least low impedance. Component according to one of claims 1 to 21, characterized in that the ohmic resistance (R) of the material ( 7 ) is smaller in a first voltage range (U1) by a factor of greater than 10, preferably greater than 100, than in the second voltage range (U2). Component according to one of claims 1 to 22, characterized in that the material ( 7 ) forms a varistor, wherein the ohmic resistance (R) of the material ( 7 ) decreases with increasing voltage (U). Component according to one of claims 1 to 23, characterized in that the material ( 7 ) in the form of a preformed particle ( 20 ) provided for the structural elements ( 9 ) and / or the contact structures ( 1 . 2 ) of the component ( 10 ) is applied. Component according to one of claims 1 to 24, characterized in that the optoelectronic component ( 10 ) is a light emitting diode, a laser diode, a photodiode, a semiconductor detector or a semiconductor sensor. Component according to one of claims 1 to 25, characterized in that the protective structure ( 5 ) further into a semiconductor body ( 3 ) integrated micromechanical switching element ( 25 ). Component according to claim 26, characterized gekenn characterized in that the micromechanical switching element ( 25 ) an electrostatically deformable, via a depression ( 30 ) or over a slanted surface area ( 4 ) of a semiconductor body ( 3 ) protruding contact element ( 26 ) having. Component according to claim 26 or 27, characterized in that the contact element ( 26 ) an outer end ( 27 ) whose position is electrostatically or magnetically changeable. Component according to Claims 27 and 28, characterized in that the contact element ( 26 ) can be prestressed with an electrical potential (V) and is mechanically deformable depending on the magnitude of the biasing electrical potential (V). Component according to claim 29, characterized in that the contact element ( 26 ) in either a deformed state or in a non-deformed state the first contact terminal ( 1 ) conductive with the second contact terminal ( 2 ) connects. Optoelectronic component ( 10 ) with a protective structure ( 5 ) against overvoltages, whereby the component ( 10 ) a semiconductor body ( 3 ), a first contact terminal ( 1 ) and a second contact terminal ( 2 ) and wherein the protective structure ( 5 ) in the semiconductor body ( 3 ) integrated micromechanical switching element ( 25 ). Component according to claim 31, characterized in that the micromechanical switching element ( 25 ) an electrostatically deformable, via a depression ( 30 ) or over a surface area ( 4 ) of the semiconductor body ( 3 ) protruding contact element ( 26 ) having. Component according to claim 32, characterized in that the contact element ( 26 ) an outer end ( 27 ) whose position is electrostatically or magnetically changeable. Component according to claim 32 or 33, characterized in that the contact element ( 26 ) can be prestressed with an electrical potential and is mechanically deformable depending on the magnitude of the biasing electrical potential. Component according to claim 34, characterized in that the contact element ( 26 ) in either a deformed state or in a non-deformed state the first contact terminal ( 1 ) conductive with the second contact terminal ( 2 ) connects. Component according to one of claims 1 to 35, characterized in that the protective structure ( 5 ) a material ( 7 ) whose differential electrical resistance (Rd) in a first voltage range (U1) above a threshold voltage (Ug) has a smaller value (R1) than in a second voltage range (U2) below the threshold voltage (Ug), wherein the material ( 7 ) on the structural elements ( 9 ) and / or the contact connections ( 1 . 2 ) is applied. Component according to claim 36, characterized in that the material ( 7 ) is provided in the form of a pasty mass whose external shape at least partially through the surfaces of the structural elements ( 9 ) and / or contact structures ( 1 . 2 ) is predetermined, to which the pasty mass is applied. Method for producing an optoelectronic component ( 10 ) with a protective structure ( 5 ) against overvoltages, the method comprising the following steps: - producing a plurality of structural elements ( 9 ) for an optoelectronic component ( 10 ), wherein the plurality of structural elements ( 9 ) at least one semiconductor body ( 3 ), a first contact terminal ( 1 ) and a second contact terminal ( 2 ), - forming a protective structure ( 5 ) by applying a material ( 7 ) whose differential electrical resistance (Rd) in a first voltage range (U1) above a threshold voltage (Ug) has a smaller value (R1) than in a second voltage range (U2) below the threshold voltage (Ug), on at least some of the structural elements ( 9 ) of the plurality of structural elements ( 8th ). Method according to claim 38, characterized in that the material ( 7 ) in the form of a pasty mass ( 6 ) on at least some of the structural elements ( 9 ) is applied, wherein the outer shape of the pasty mass ( 6 ) through the surfaces of the structural elements ( 9 ), to which the pasty mass ( 6 ) is applied. Method according to claim 38 or 39, characterized in that the material ( 7 ) at least to a surface area ( 4 ) of the semiconductor body ( 3 ) is applied. Method according to one of claims 38 to 40, characterized in that the material ( 7 ) between the first contact terminal ( 1 ) and the second contact terminal ( 2 ) as overvoltage protection between both contact connections ( 1 . 2 ) is arranged. Method according to one of claims 38 to 41, characterized in that the material ( 7 ) as pasty mass ( 6 ) at first ( 1 ) and the second contact terminal ( 2 ) and / or on the semiconductor body ( 3 ) is pressed or printed. Method according to one of claims 38 to 41, characterized in that from the material ( 7 ) first a preformed particle ( 20 ), which at first ( 1 ) and second contact terminal ( 2 ) and / or on the semiconductor body ( 3 ) is glued, bonded or soldered. Method according to one of claims 38 to 43, characterized in that the material ( 7 ) after application to at least some of the structural elements ( 9 ) is sintered. Method according to one of claims 38 to 44, characterized in that after the application of the material ( 7 ) on at least some of the structural elements ( 9 ) an electrically conductive layer ( 15 ) on the material ( 7 ) is deposited. Method according to one of claims 39 to 44, characterized in that during the application or after the application of the material ( 7 ) pasty mass ( 6 ) a preformed metal body ( 16 ) on the pasty mass ( 6 ) is pressed. Method according to one of claims 38 to 46, characterized in that by means of the material ( 7 ) a light emitting diode, a laser diode, a photodiode, a semiconductor detector or a semiconductor sensor is protected against overvoltages. Method according to one of claims 38 to 47, characterized in that after the completion of the optoelectronic device ( 10 ) an electrical functional test on the optoelectronic component ( 10 ), in which the material ( 7 ) formed protective structure ( 5 ) on the optoelectronic component ( 10 ) remains. Method according to one of claims 38 to 48, characterized in that the material ( 7 ) formed protective structure ( 5 ) only when installing the optoelectronic device ( 10 ) in a terminal of the optoelectronic component ( 10 ) Will get removed.