GB2300047A - Inertial sensor assembly - Google Patents

Inertial sensor assembly Download PDF

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Publication number
GB2300047A
GB2300047A GB9604112A GB9604112A GB2300047A GB 2300047 A GB2300047 A GB 2300047A GB 9604112 A GB9604112 A GB 9604112A GB 9604112 A GB9604112 A GB 9604112A GB 2300047 A GB2300047 A GB 2300047A
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United Kingdom
Prior art keywords
figures
planar members
sensors
planar
inertial sensor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9604112A
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GB9604112D0 (en
GB2300047B (en
Inventor
Roger Sean Fitzpatrick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Smiths Group PLC
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Smiths Group PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9507930.7A external-priority patent/GB9507930D0/en
Application filed by Smiths Group PLC filed Critical Smiths Group PLC
Priority to GB9604112A priority Critical patent/GB2300047B/en
Publication of GB9604112D0 publication Critical patent/GB9604112D0/en
Publication of GB2300047A publication Critical patent/GB2300047A/en
Application granted granted Critical
Publication of GB2300047B publication Critical patent/GB2300047B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/097Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C21/00Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00
    • G01C21/10Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration
    • G01C21/12Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning
    • G01C21/16Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning by integrating acceleration or speed, i.e. inertial navigation
    • G01C21/166Mechanical, construction or arrangement details of inertial navigation systems
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5607Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
    • G01C19/5628Manufacturing; Trimming; Mounting; Housings
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00Details of instruments
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00Details of instruments
    • G01P1/02Housings
    • G01P1/023Housings for acceleration measuring devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends

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  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Gyroscopes (AREA)
  • Pressure Sensors (AREA)

Abstract

Planar array silicon chips 1' are micro-machined to incorporate tuning-fork sensors 2' of rotational acceleration, spatula sensors 9 of translational acceleration and surface formations. The chips are assembled in orthogonal arrangements by engaging the surface formations with one another. The formations may be a series of rectangular projections and recesses along the edges of the chips (8, figure 3) or body mortise holes 10 and corresponding protruding tenon tongues 11. Pads provide electrical connection between chips (7, fig 7). The pads on two chips could be connected by solder plugs (18, fig 7) or wire bonding (19, fig 8); or using electrically-conductive tangs (7', fig 10b), interlocking egde-lap joining forms (20, fig 11b) or residual interference-fit stress pressure (fig 9b).

Description

INERTIAL SENSOR ASSEMBLIES This invention relates to inertial sensor assemblies.
It is known to micro-machine solid-state inertial sensing devices from monolithic blanks of material such as silicon. Such sensing devices may take the form of oscillating 'tuning-forks' demonstrating detectable resonance when subjected to rotational accelerations (a form of solid-state rate gyro) or 'spatula' cantilevered masses demonstrating detectable displacements when subjected to translation accelerations (a form of solid-state accelerometer). The material blanks into which such devices are micro-machined are also known to be treated to incorporate the integral analogue and/or digital electrical driving, sensing, processing and signalling devices necessary to render such blanks, on completion, active solid-state inertial sensing devices or 'chips'.
These previous devices are micro-machined from essentially two-dimensional planar material blanks so that their resultant tuning forks and spatulas lie in the plane of the material.
Since the resultant tuning-fork rate gyro senses rotation about its axis of symmetry, and since the resultant spatula accelerometer senses acceleration normal to its plane of symmetry, an array of such devices micro-machined from a planar blank of material is typically incapable of sensing rotations about more than two axes, or accelerations in more than one.
To sense rotations about three orthogonal axes, two such planar array devices are assembled into a three-dimensional form. To sense accelerations in three orthogonal axes three devices are similarly assembled. If inertial effects are to be measured precisely, the assemblies must be accurately orthogonal in alignment. Since planar array devices are small, it is difficult and costly to make and maintain accurate orthogonal alignment during assembly.
It is an object of the present invention to provide an improved inertial sensor assembly and method of manufacture.
According to one aspect of the present invention there is provided an inertial sensor assembly comprising first and second planar members supporting respective inertial sensors, the planar members being formed with surface formations arranged to engage one another and retain the planar members in an angular relationship with one another.
The planar members are preferably assembled in an orthogonal arrangement. The surface formations may be located towards an edge of the planar members and may be provided by alternate projections and recesses along an edge of the planar member. The surface formations in at least one planar member may be provided by at least one opening in the planar member.
The assembly preferably includes three planar members assembled orthogonally with one another by engagement of the surface formations. The sensors are preferably solid-state vibrating inertial sensors and each planar member may include two inertial sensors arranged at right angles to one another. The sensors may include an acceleration sensor. The sensors are preferably machined from the material of the planar members. The planar members may also support associated electronics for the sensors. The planar members may be electrically interconnected with one another at locations adjacent a line of intersection of the planar members.
According to another aspect of the present invention there is provided a method of manufacture of an inertial sensor assembly comprising the steps of forming surface formations in first and second planar members supporting respective inertial sensors, and engaging surface formations of one planar member with surface formations of the other planar member such that the planar members are supported in an angular relationship with one another.
The method may include the step of forming the inertial sensors from the material of the planar members by the same technique used to form the surface formations.
According to a further aspect of the present invention there is provided an assembly made by a method according to the above other aspect of the present invention.
An inertial sensing assembly in accordance with the invention will now be described, by way of example, with reference to the accompanying drawings, in which: Figure 1 is a plan view of a sensor chip with edge-lap joining forms; Figure 2 is a plan view of a chip with several sensors and alternative mortise and tenon joining formations; Figure 3 is a perspective view of an assembly of three of the sensor chips shown in Figure 1; Figure 4 is an exploded perspective view of an assembly of three of the sensor chips shown in Figure 2; Figure 5a is a perspective view of an assembly of six of the sensor chips shown in Figure 2; Figure 5b is a perspective view of a plinth carrier chip suitable for mounting the assembly shown in Figure 5a;; Figure Sc is a perspective view of the assembly shown in Figure 5a mounted on the carrier chip shown in Figure 5b.
Figure 6 is a scrap perspective view of the joint between two of the sensor chips shown in Figure 1; Figure 7 is a sectional view of an electrical connection between two sensor chips; Figure 8 is a sectional view of an alternative electrical connection between two sensor chips; Figure 9a is a pre-assembly scrap perspective view of the joining form of two of the sensor chips shown in Figure 2; Figure 9b is a scrap perspective view of the completed joint between the two sensor chips shown in Figure 9a; Figure 1 Oa is a scrap perspective view of an alternative arrangement ofjoining form with electrical connectors of the sensor chip shown in Figure 1 before assembly; Figure lOb is a scrap perspective view of the completed joint between two of the sensor chips shown in Figure 1 Oa;; Figure 1 la is a scrap perspective view of two interlocked sensor chips of the type shown in Figure 1; Figure 11 b is a scrap perspective view of an electrical interconnect component suitable for joining the interlocked sensor chips shown in Figure 1 1 a; and Figure 1 ic is a scrap perspective view of the completed joint between the two interlocked sensor chips shown in Figure 1 la, electrically connected by the interconnect component shown in Figure 1 lb.
With reference first to Figure 1, there is shown a planar silicon chip 1 incorporating in its central area an integrally micro-machined tuning-fork rotational rate sensor 2. The sensor 2 is sensitive to rotational accelerations about an axis X parallel to the arms of the tuning-fork and lying in the plane of vibration. The sensor 2 is subject to excitation drivers 3 and resonance sensors 4 connected by electrical tracks 5 to an integral processing device 6, which in turn is connected to electrical connector pads 7 at the edge of the chip. The edge of the chip has been micro-machined by the same technique or process employed in forming the tuning-fork 2 to excise edge-lap joining forms 8 during the same operation. The forms 8 are a series of rectangular projections and recesses along the edges of the chip 1.
Referring now to Figure 2, there is shown an alternative configuration of planar silicon chip 1' incorporating an array of inertial sensors comprising two integrally micro-machined tuning-fork rotation sensors 2' arranged at right angles to detect rotational accelerations about axes X and Y respectively. The chip 1' also includes an integrally micromachined spatula linear acceleration sensor 9 for detecting translation accelerations in the direction of an axis Z (not shown) perpendicular to the plane of the sensor. Adjacent to its edge, the chip 1' has been micromachined by the same process used in forming the tuning forks 2' and spatula 9 to excise within its body mortise holes 10, and on its edges corresponding protruding tenon tongues 11, each with electrical connector pads 7 (Figure 7).
Figure 3 shows an assembly of three identical ones of the planar silicon chips 1 shown in Figure 1, illustrating the interlocking of each chip's edge-lap joining forms 8 to create a threedimensional sensing device able to sense rotations about orthogonal axes X, Y and Z.
In Figure 4 there is shown an alternative implementation of the invention showing three of the planar-array silicon chips 1' of Figure 2, prior to assembly. After assembly, their mortise and tenon joining forms 10 and 11 interlock to create a three-dimensional sensing device capable of providing dual sensing of rotational accelerations in each of the three axes X, Y and Z by differently aligned tuning-fork sensors 2'. The assembly can also provide a single sensing of translation accelerations in each of the same three axes X, Y and Z by spatula sensors 9. It will be appreciated that further sensors could be made integral with each chip, co-aligned or differently oriented, to increase further the multiplicity and/or redundancy of the assembly's sensing capabilities in each axis.
Figure 5a shows a closed assembly 12 of six of the silicon chips 1' shown in Figure 2 providing quadruplex rotational sensing, and duplex translation sensing, in all three axes. A plinth carrier chip 13 suitable for mounting the assembly 12 is shown in Figure 5b; this has recesses 14 to accommodate the tenon tongues 11 of the assembly 12, as shown in Figure 5c.
The carrier chip 13 has connector pads 15 aligned to accept electrical connections with the assembly 12, and tracks 16 and terminal pads 17 configured to connect the completed assembly electrically to other electrical devices (not shown).
Figure 6 shows the mated joining forms of two of the silicon chips 1 shown in Figure 1 illustrating the close proximity of the electrical connection pads 7 in the joining forms 8 of each chip 1. The pads 7 on the two chips could be electrically connected by a solder plug 18, as shown in Figure 7, or by wire bonding, as shown in Figure 8.
Figure 9a shows the corresponding mortise 10 and tenon 11 surface formations on two of the sensor chips 1' illustrated in Figure 2. Electrical connector pads 7 in the surfaces of the mortise and tenon joining forms are arranged to contact one another upon mating of the two chips. The geometry of the mortise 10 and tenon 11 are of wedge form so that, when assembled as shown in Figure 9b, residual interference-fit stress pressure will maintain contact between the respective electrical connector pads 7.
In Figure 10a there is shown an edge-lap joining form of the silicon chip 1 shown in Figure 1 illustrating electrically-conductive tangs 7' sacrificially exposed by the photo-etch material removal process used in generating the edge-lap joining forms.
When the two chips 1 are assembled with one another, the tangs 7' on one chip are distorted and contact the pads 7 on an edge-lap joining formation of the other chip, as shown in Figure 10b, so that the chips are electrically connected.
Figure 1 la shows the assembled interlocking edge-lap joining forms 8 of two of the mating silicon chips 1 shown in Figure 1, illustrating an alternative arrangement of externally-arrayed electrically conductive pads 7 and tracks 5. The pads 7 are interconnected by an additional electrical assembly component 20 comprising a non-conductive carrier material with electrically-conductive tangs 7" selectively interconnected by tracks 5" The tangs 7" project at right angles and are located to contact the pads 7 on the chips 1, as shown in Figure 11 c, so that electrical connection is established between the circuits on the two chips.
Other forms of interconnection could be used. It is not essential for the planar chips to be assembled in an orthogonal arrangement. If desired, they could be assembled at other angles to one another. Although it is preferable for the inertial sensors to be formed from the material of the planar members themselves, it would be possible for them to be formed separately and subsequently attached to mounting boards formed with interengaging surface formations.
The rigidity and/or structural integrity of the assemblies depends on the geometry of the joining forms and the nature of the electrical connections. Conventional bonding or potting techniques can be used to improve the rigidity of the structure.
The geometries of the sensors in the planar devices can be varied either during or after forming and prior to assembly so as to avoid vibrational resonance or other undesirable cross coupling affects between sensors.

Claims (24)

1. An inertial sensor assembly comprising first and second planar members supporting respective inertial sensors, wherein the planar members are formed with surface formations arranged to engage one another and retain the planar members in an angular relationship with one another.
2. An assembly according to Claim 1, wherein the planar members are assembled in an orthogonal arrangement.
3. An assembly according to Claim 1 or 2, wherein the surface formations are located towards an edge of the planar members.
4. An assembly according to Claim 3, wherein the surface formations are provided by alternate projections and recesses along an edge of the planar members.
5. An assembly according to any one of the preceding claims, wherein a surface formation in at least one planar member is provided by at least one opening in the planar member.
6. An assembly according to any one of the preceding claims including three planar members assembled orthogonally with one another by engagement of said surface formations.
7. An assembly according to any one of the preceding claims, wherein the sensors are solid-state vibrating inertial sensors.
8. An assembly according to Claim 7, wherein each planar member includes two inertial sensors arranged at right angles to one another.
9. An assembly according to any one of the preceding claims, wherein the sensors include an acceleration sensor.
10. An assembly according to any one of the preceding claims, wherein the sensors are machined from the material of the planar members.
11. An assembly according to any one of the preceding claims, wherein the planar members support associated electronics for the sensors.
12. An assembly according to any one of the preceding claims, wherein the planar members are electrically interconnected with one another at locations adjacent a line of intersection of the planar members.
13. An inertial sensor assembly substantially as hereinbefore described with reference to Figures 1 and 3 of the accompanying drawings.
14. An inertial sensor assembly substantially as hereinbefore described with reference to Figures 2, 4 and 5 of the accompanying drawings.
15. An inertial sensor assembly substantially as hereinbefore described with reference to Figures 1 and 3 or Figures 2, 4 and 5 as modified by Figures 6 and 7 or Figures 6 and 8 of the accompanying drawings.
16. An inertial sensor assembly substantially as hereinbefore described with reference to Figures 1 and 3 or Figures 2, 4 and 5 as modified by Figures 9, 10 or 11 of the accompanying drawings.
17. A method of manufacture of an inertial sensor assembly comprising the steps of forming surface formations in first and second planar members supporting respective inertial sensors, and engaging surface formations of one planar member with surface formations of the other planar member such that the planar members are supported in an angular relationship with one another.
18. A method according to Claim 17, including the step of forming the inertial sensors from the material of the planar members by the same technique used to form the surface formations.
19. A method of making an inertial sensor assembly substantially as hereinbefore described with reference to Figures 1 and 3 of the accompanying drawings.
20. A method of making an inertial sensor assembly substantially as hereinbefore described with reference to Figures 2, 4 and 5 of the accompanying drawings.
21. A method of making inertial sensor assembly substantially as hereinbefore described with reference to Figures 1 and 3 or Figures 2, 4 and 5 as modified by Figures 6 and 7 or Figures 6 and 8 of the accompanying drawings.
22. A method of making an inertial sensor assembly substantially as hereinbefore described with reference to Figures 1 and 3 or Figures 2, 4 and 5 as modified by Figures 9, 10 or 11 of the accompanying drawings.
23. An assembly made by a method according to any one of Claims 17 to 22.
24. Any novel feature or combination of features as hereinbefore described.
GB9604112A 1995-04-19 1996-02-27 Inertial sensor assemblies Expired - Fee Related GB2300047B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9604112A GB2300047B (en) 1995-04-19 1996-02-27 Inertial sensor assemblies

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9507930.7A GB9507930D0 (en) 1995-04-19 1995-04-19 Inertial sensor assemblies
GB9604112A GB2300047B (en) 1995-04-19 1996-02-27 Inertial sensor assemblies

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GB9604112D0 GB9604112D0 (en) 1996-05-01
GB2300047A true GB2300047A (en) 1996-10-23
GB2300047B GB2300047B (en) 1999-04-14

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0877226A2 (en) * 1997-05-09 1998-11-11 Litton Systems, Inc. Monolithic vibrating beam angular velocity sensor
EP1227383A1 (en) * 2001-01-25 2002-07-31 BEI Technologies, Inc. Redundant inertial rate sensor and method
EP1630561A1 (en) * 2004-08-25 2006-03-01 Autoliv Asp, Inc. Accelerometer assembly with two possible orientations of the sensing axis relative to the housing
FR2917233A1 (en) * 2007-06-07 2008-12-12 Commissariat Energie Atomique 3D INTEGRATION OF VERTICAL COMPONENTS IN RECONSTITUTED SUBSTRATES.

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2151022A (en) * 1983-12-05 1985-07-10 Litton Systems Inc Two axis multisensor
US4891984A (en) * 1985-10-08 1990-01-09 Nippondenso Co., Ltd. Acceleration detecting apparatus formed by semiconductor
US5012316A (en) * 1989-03-28 1991-04-30 Cardiac Pacemakers, Inc. Multiaxial transducer interconnection apparatus
GB2242026A (en) * 1990-03-17 1991-09-18 Daimler Benz Ag Multicomponent acceleration sensor
US5275048A (en) * 1992-01-21 1994-01-04 Sundstrand Corporation Acceleration overload protection mechanism for sensor devices
US5326726A (en) * 1990-08-17 1994-07-05 Analog Devices, Inc. Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2151022A (en) * 1983-12-05 1985-07-10 Litton Systems Inc Two axis multisensor
US4891984A (en) * 1985-10-08 1990-01-09 Nippondenso Co., Ltd. Acceleration detecting apparatus formed by semiconductor
US5012316A (en) * 1989-03-28 1991-04-30 Cardiac Pacemakers, Inc. Multiaxial transducer interconnection apparatus
GB2242026A (en) * 1990-03-17 1991-09-18 Daimler Benz Ag Multicomponent acceleration sensor
US5326726A (en) * 1990-08-17 1994-07-05 Analog Devices, Inc. Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure
US5275048A (en) * 1992-01-21 1994-01-04 Sundstrand Corporation Acceleration overload protection mechanism for sensor devices

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0877226A2 (en) * 1997-05-09 1998-11-11 Litton Systems, Inc. Monolithic vibrating beam angular velocity sensor
EP0877226A3 (en) * 1997-05-09 2000-05-10 Litton Systems, Inc. Monolithic vibrating beam angular velocity sensor
EP1227383A1 (en) * 2001-01-25 2002-07-31 BEI Technologies, Inc. Redundant inertial rate sensor and method
US6462530B1 (en) 2001-01-25 2002-10-08 Bei Technologies, Inc. Redundant rate sensor and method
EP1630561A1 (en) * 2004-08-25 2006-03-01 Autoliv Asp, Inc. Accelerometer assembly with two possible orientations of the sensing axis relative to the housing
US7181968B2 (en) 2004-08-25 2007-02-27 Autoliv Asp, Inc. Configurable accelerometer assembly
FR2917233A1 (en) * 2007-06-07 2008-12-12 Commissariat Energie Atomique 3D INTEGRATION OF VERTICAL COMPONENTS IN RECONSTITUTED SUBSTRATES.
US8039306B2 (en) 2007-06-07 2011-10-18 Commissariat A L'energie Atomique 3D integration of vertical components in reconstituted substrates

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Publication number Publication date
GB9604112D0 (en) 1996-05-01
GB2300047B (en) 1999-04-14

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Effective date: 20050227