GB2288484A - High power, pulsed laser diode driver incorporating low impedance storage capacitor - Google Patents
High power, pulsed laser diode driver incorporating low impedance storage capacitor Download PDFInfo
- Publication number
- GB2288484A GB2288484A GB9507555A GB9507555A GB2288484A GB 2288484 A GB2288484 A GB 2288484A GB 9507555 A GB9507555 A GB 9507555A GB 9507555 A GB9507555 A GB 9507555A GB 2288484 A GB2288484 A GB 2288484A
- Authority
- GB
- United Kingdom
- Prior art keywords
- energy storage
- storage capacitor
- laser
- impedance
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 title claims description 48
- 238000004146 energy storage Methods 0.000 claims description 52
- 239000004065 semiconductor Substances 0.000 claims description 41
- 230000003287 optical effect Effects 0.000 claims description 19
- 238000010278 pulse charging Methods 0.000 claims description 11
- 230000003750 conditioning effect Effects 0.000 claims description 10
- 238000003491 array Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000001960 triggered effect Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007600 charging Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011022 operating instruction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940007835A KR970009668B1 (ko) | 1994-02-04 | 1994-04-14 | 레이저 다이오드 드라이버 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9507555D0 GB9507555D0 (en) | 1995-05-31 |
| GB2288484A true GB2288484A (en) | 1995-10-18 |
Family
ID=19381038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9507555A Withdrawn GB2288484A (en) | 1994-04-14 | 1995-04-11 | High power, pulsed laser diode driver incorporating low impedance storage capacitor |
Country Status (7)
| Country | Link |
|---|---|
| CN (1) | CN1132953A (enrdf_load_stackoverflow) |
| BR (1) | BR9501371A (enrdf_load_stackoverflow) |
| DE (1) | DE19514062A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2720858A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2288484A (enrdf_load_stackoverflow) |
| IT (1) | IT1273543B (enrdf_load_stackoverflow) |
| TW (1) | TW267267B (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10058774A1 (de) * | 2000-11-27 | 2002-06-13 | Adva Ag | Optische Sendeeinrichtung, insbesondere Laser-Sendeeinrichtung |
| DE102005022715A1 (de) | 2005-05-18 | 2006-11-23 | Leuze Lumiflex Gmbh + Co. Kg | Schaltungsanordnung |
| CN104022440B (zh) * | 2014-05-30 | 2017-02-01 | 绵阳科创园区精机电子有限公司 | 一种激光二极管微秒脉冲驱动电路及驱动方法 |
| EP3980797A1 (de) | 2019-07-25 | 2022-04-13 | Quantum Technologies UG (Haftungsbeschränkt) | Vorrichtung und verfahren zur verwendung von diamant-nanokristallen mit nv-farbzentren in cmos-schaltkreisen |
| US12394958B2 (en) | 2020-01-07 | 2025-08-19 | Elmos Semiconductor Se | Light module and LIDAR apparatus having at least one light module of this type |
| DE102020124564A1 (de) | 2020-01-07 | 2021-07-08 | Elmos Semiconductor Se | Linse für ein mechanikloses LIDARSystem für eine Drohne |
| DE102020114782B4 (de) | 2020-01-07 | 2024-08-14 | Elmos Semiconductor Se | Mechanikloses LIDAR-System für eine Drohne |
| CN111682399B (zh) * | 2020-06-20 | 2021-07-20 | 深圳市灵明光子科技有限公司 | 激光发射器驱动电路、系统及高速光通信装置 |
| US12230940B2 (en) | 2021-01-25 | 2025-02-18 | Elmos Semiconductor Se | Mechanically free LIDAR system |
| DE102021128923A1 (de) | 2021-01-25 | 2022-07-28 | Elmos Semiconductor Se | Mechanikloses ISO26262 konformes LIDAR-System |
| DE102021101584B3 (de) | 2021-01-25 | 2022-03-10 | Elmos Semiconductor Se | Mechanikloses ISO26262 konformes LIDAR-System |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1425987A (en) * | 1972-07-03 | 1976-02-25 | Bofors Ab | Diode laser pumping |
| US5121401A (en) * | 1990-05-03 | 1992-06-09 | Motorola, Inc. | Pulsed modulators utilizing transmission lines |
| US5280168A (en) * | 1991-11-25 | 1994-01-18 | The United States Of America As Represented By The Secretary Of The Army | Tapered radial transmission line for an optically activated hybrid pulser |
-
1995
- 1995-04-07 TW TW084103320A patent/TW267267B/zh active
- 1995-04-11 GB GB9507555A patent/GB2288484A/en not_active Withdrawn
- 1995-04-12 IT ITMI950750A patent/IT1273543B/it active IP Right Grant
- 1995-04-13 CN CN95104214.9A patent/CN1132953A/zh active Pending
- 1995-04-13 FR FR9504444A patent/FR2720858A1/fr active Pending
- 1995-04-13 DE DE19514062A patent/DE19514062A1/de not_active Withdrawn
- 1995-04-13 BR BR9501371A patent/BR9501371A/pt not_active Application Discontinuation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1425987A (en) * | 1972-07-03 | 1976-02-25 | Bofors Ab | Diode laser pumping |
| US5121401A (en) * | 1990-05-03 | 1992-06-09 | Motorola, Inc. | Pulsed modulators utilizing transmission lines |
| US5280168A (en) * | 1991-11-25 | 1994-01-18 | The United States Of America As Represented By The Secretary Of The Army | Tapered radial transmission line for an optically activated hybrid pulser |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1273543B (it) | 1997-07-08 |
| BR9501371A (pt) | 1995-11-14 |
| ITMI950750A0 (it) | 1995-04-12 |
| FR2720858A1 (fr) | 1995-12-08 |
| GB9507555D0 (en) | 1995-05-31 |
| ITMI950750A1 (it) | 1996-10-12 |
| CN1132953A (zh) | 1996-10-09 |
| DE19514062A1 (de) | 1995-11-02 |
| TW267267B (enrdf_load_stackoverflow) | 1996-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12038509B2 (en) | Solid-state LIDAR transmitter with laser control | |
| US10903621B2 (en) | Circuit for driving a laser and method therefor | |
| US3982201A (en) | CW solid state laser | |
| US5444729A (en) | High power, high pulse repetition frequency, compact, pulsed laser diode driver | |
| GB2288484A (en) | High power, pulsed laser diode driver incorporating low impedance storage capacitor | |
| US5450430A (en) | High power laser diode driver utilizing a monolithic semiconductor device | |
| JPS62261219A (ja) | ソリツドステ−トリレ− | |
| US5406572A (en) | High power, high pulse repetition frequency, compact, pulsed laser diode driver | |
| US12388233B2 (en) | Laser diode driver circuits and methods of operating thereof | |
| WO2021254041A1 (zh) | 激光发射器驱动电路、系统及高速光通信装置 | |
| WO2022109213A1 (en) | Driver circuit and method for providing a pulse | |
| GB2286483A (en) | High power, pulsed laser diode driver incorporating low impedance storage capacitor | |
| US5418807A (en) | High power, high pulse repetition frequency, compact, pulsed laser diode driver | |
| RU2627729C2 (ru) | По отдельности управляемая матрица излучающих элементов | |
| US3942132A (en) | Combined electron beam semiconductor modulator and junction laser | |
| US5477556A (en) | High power laser diode driver utilizing a monolithic semiconductor device with a thyristor-like structured switch | |
| KR970009668B1 (ko) | 레이저 다이오드 드라이버 | |
| JPH05283809A (ja) | 熱クロストークを減じた被変調固体レーザアレイを動作させる改良型アレイ及び方法 | |
| CA2142629A1 (en) | High power, high pulse repetition frequency, compact, pulsed laser diode driver | |
| CN207801884U (zh) | 一种光控晶闸管及其触发控制系统 | |
| GB2288689A (en) | Laser diode driver incorporating monolithic semiconductor storage capacitor and optically activated thyristor switch | |
| US5262657A (en) | Optically activated wafer-scale pulser with AlGaAs epitaxial layer | |
| US9473080B1 (en) | Photoconductive semiconductor amplifier and switch | |
| CA2142628A1 (en) | High power, high pulse repetition frequency, compact, pulsed laser diode driver | |
| WO2025168409A1 (en) | Laser device and method of operating a semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |