GB2275350A

GB2275350A - Photosensitising optical waveguide by local heating

Info

Publication number: GB2275350A
Application number: GB9403040A
Authority: GB
Inventors: Francois C Bilodeau; Bernard Yvon Malo; Jacques Albert; Derwyn Carlyle Johnson; Kenneth Owen Hill
Original assignee: CA MINISTER COMMUNICATIONS; Canada Minister of Communications
Current assignee: CA MINISTER COMMUNICATIONS; Canada Minister of Communications
Priority date: 1993-02-17
Filing date: 1994-02-17
Publication date: 1994-08-24
Anticipated expiration: 2014-02-17
Also published as: JPH07196334A; FR2704323A1; GB2275350B; GB9403040D0; JP3011308B2; CA2115906A1; CA2115906C; FR2704323B1; DE4404874A1; DE4404874C2

Description

2275350

FIELD OF-THE INVENT10

This invention relates to optical waveguidem and particularly to a method of fabricating a strongly photosensitive waveguide from a weakly photosensitive waveguide.

ACKGRQUND TO THE lT:

optical waveguides can exhibit the property of photosensitivity manifest as a permanent, light-induced refractive index change. Initial experiments as described in U.S. Patent 4,474,427 issued October 2nd, 1984, invented by K.O. Hill et al demonstrated the phenomenon in optical fibers but recently it has been detected as well in planar glass structures, including, for example, silica-on-silicon and silica-on-silica planar waveguides.

Photosensitivity can be used to make retro reflecting Bragg gratings, mode convertor gratingG and rocking rotators in optical waveguides; to fabricate such devices, a permanent, spatially periodic refractive index modulation is impressed with light along the length of the photosensitive core of the optical waveguide.

Methods of fabricating such Bragg gratings are described in U.S. patent application serial number 969,774. filed October 29th, 1992, invented by K.O. Hill, B. Malo, F. Bilodeau and D. Johnson and entitled METHOD OF FABRICATING BRAGG GRATINGS USING A SILICA GLASS PHASE GRATING MASK.

The near UV absorption spectrum of the Ge doped core of optical fiber, Ge:Si02-on-Si or Ge:Si02 on-S102 waveguide is influenced strongly by the type and concentration of in-core defects. It has been found that photosensitivity in Ge-doped core waveguides is linked with absorption due to oxygen vacancy defects in the 240 = UV region, as described by G. Meltz et al in Optical Letters 14, 823 (1989)- High quality optical fiber such as corning SMF-28 fiber and NTT silica-on silicon planar guides contain comparatively low concentrations of defects. As a result both types of waveguide are relatively transparent in the near UV and are characterized as being weakly photosensitive.

SUMDWY OF THE PRESENT INVENTIQN:

We have discovered an effective and simple method for augmenting substantially the photosensitivity' of weakly photosensitive high silica Ge-doped core optical waveguides to ultraviolet light. Different dopants can result in photosensitivity at different wavelengths. it appears that the method may also work to photosensitize other types of optical waveguide at is different wavelengths, for example those doped with cerium or europium and co-doped with alumina, for example.

in contrast to other methods, as described by G.D. Maxwell et al In Electronic Letters 29, 2106 (1992), photosensitization in our case is achieved with a negligible increase in loss at the three principal optical communication windows for typical Bragg retro reflector device lengths. Further, our technique permits localized photosensitization of commercially available high-quality optical waveguides.

In accordance with an embodiment of the invention, a method of fabricating a strongly photosensitive optical wavegulde is comprised of locally heating a portion of a weakly photosensitive optical waveguide, for a period of time sufficient increase the density of defects in the waveguide to a level required to enhance the waveguidels photosensitive response.

In accordance with another embodiment, a length of weakly photosensitive optical waveguide has a localized section which is significantly photosensitive.

KRIEF INTRQDUCTION TO THE DRAWINCS:

A better understanding of the invention will be obtained by reference to the detailed description below. in conjunction with the following drawings, in which:

Figure 1 illustrates an optical fiber being flarae brushed, Figure 2 is a plot of index change as a function of flame brush processing time as observed in an optical fiber, Figure 3 curve (a) illustrates the dispersion in absorption coefficient of a Ge-doped slab waveguide layer measured normal to the substrata prior to treatment, is Figure 3 curve (b) illustrates the dispersion in absorption coefficient of the slab waveguide layer after flame brush treatment, Figure 3 curve (c) illustrates an experimental measurement of the photo-induced change in the dispersion of the absorption coefficient with wavelength for the photosensitized Ge-doped slab waveguide layer caused by UV light irradiation.

Pigure 4 illustrates a measurement of the wavelength response of a Bragg grating in the core of a planar three dimensional waveguide after processing in accordance with the present invention, Figure 5 is a cross-section of a portion of an optical fiber containing a Bragg grating, and Figure 6 Is a cross-section of a fragment of a grating face mask.

PETAILEn DESCRIPTT ON OF THE INVENTION Figure 1 illustrates a section of waveguidc--, in the form of an optical fiber comprised of core 1 surrounded by cladding 3. A region of the waveguide is immersed in a flame 5, which is brushed "back and forth11 repeatedly in a localized region with the flame along the region in the directions shown by the arrows.

However, it could be locally heated by some other suitable source of heat such as C02 laser or an electric arc. Brushing is used to increase the size of the treated region. Otherwise. brushing need not be used.

In a preferred embodiment of the invention, the region of weakly (including negligibly) photosensitive optical waveguide that is to be photosensitized is Obrushed" repeatedly by flame 5 fueled by a fuel such as hydrogen or propane but to which a small amount of oxygen is sometimes added (approximate flame temperature is 1700OC). It has been found that photosensitization typically takes is approximately 20 minutes to complete for maximum effect under the conditions used in our experiments (Corning SMF28 fiber waveguide), although we have operated the process successfully using 10 minutes of flame, brushing. Because a relatively small flame can be used to "brush" the waveguide, the method provides highly localized photosensitization.

The temperature that the glass of the waveguide is heated is to approximately white heat (approximately the fusion point of glass).

We have used the flame brush method to increase the photosensitivity of standard (Ge-doped core Corning 5MF28) telecommunications fiber by a factor greater than ten (photoinduced refractive index charge > 10-3 at 1 = 1530 nm).

Figure 2 is a plot of the maximum (saturated) photoinduced index change observed in Corning SMF -28 fiber as a function of processing time under the flame brush. The UV light exposure conditions used were; 1 = 249 nm, fluence = 300mj/cm2/per pulse, pulse repetition frequency (PRF) = 50 HZ, exposure time = 15 =in and pulse duration = 12 nsec. In a fiber sample that is not flame brushed we observed a photoinduced index change of only 1.2x10-4i after 20 minutes of flame brush processing, the photoinduced retractive index change that was observed in a similar fiber sample peaked at 1.4x10-3.

We found that the flame brush method also rendered strongly photosensitive the waveguide- core of our samples of high quality GC.5i02-on-Si three dimensional waveguides and of Ge:SiO2-on-SiO2 two dimensional planar waveguides that were negligibly photosensitive prior to treatment. Experimentally, we observed a larger photosensitization effect in these planar waveguides than we did in the SMP-28 f-Iber: the is photoinduced refractive index change in the waveguide core of unprocessed planar waveguides was below our detection threshold, but with a flame brush treatment became larger than the photoinduced refractive index change in similarly flame brushed SMF-28 fiber for the same UV exposure conditions.

The planar slab film waveguides were fabricatGd by flame hydrolysis deposition Of Ge-doped Si02 on a silica substrate. The index step. An, of the 1Am thick Ge-doped layer on the 5'02 was measured at a wavelength 1 = 633 nm to be 1.14 + 0.04x10-2 prior to treatment and increased to 1.32 + 0.04x10-2 after 10 minutes of flame brush treatment. Associated with this change in refractive index was an increase in the absorption coefficient of the waveguide core in the ultraviolet spectral region.

curve (a) of Figure 3 illustrates the disperzion in absorption coefficient (multiplied by 200) of the waveguide layer measured normal to the substrate prior to flame brush treatment.

Curve (D) illustrates the dispersion in absorption coefficient for the waveguide layer measured after flaTac brush treatment. The enormous increase in UV absorption of the wayeguide layer that results from flame brush treatment is apparent: approximately 1000 c1BI= at 240 nia. Kramers-Kronig causality predicts that an increase in absorption at short wavelengths causes an increase in refractive index at long wavelengths, as observed.

Curve (c) illustratew an experimental measurement of Aa, the photoinduced change in the dispersion of the absorption coefficient for the flame photosensitized waveguide layer, caused by 249 nm UV light irradiation for 40 minutes with fluence per pulse is of 2.2.2 mi-Icm2 at 50 Hz PRF. The effect of the irradiation is to bleach out the absorption at 240 nra and simultaneously to increase it on both sides of the band (at 213 r= and at 281 nn). The result is that UV irradiation increass-sta the net UV absorption of the sample- and thus concomitantly increases, as observed, the refractive index at longer wavelengths.

For comparison, we measured the change in absorption due to flane brush treatment of a homogeneous silica substrate- The subetrate was identical to that which we used for the flame hydrolysis deposition of the Ge:SiO2 planar optical waveguide described above. The absorption of the substrate was basically unaffected by the processing (less than 2% change in absorption at 240 =). Therefore we attribute the increase in absorption in samples processed by flame brush entirely to the effect of processing on the optical properties of the GO:SiO2 waveguide, layer.

We postulate on this evidence that flame brushing of a waveguide affects preferentially the optical properties of the Ge-doped silica core and leaves unaffected the properties of the cladding. In this sense it is an ideal photosensitization process because the cladding can remain transparent, thereby enabling the activating light to reach the core of the waveguide unattenuated. At the same time, processing creates in the Ge-doped core very strong absorption.

rendering the core highly photosensitive so that UV light can affect the change in its refractive index.

For reasons of flexibility, grating devices are usually written in a photosensitive waveguide by illuminating the waveguide frora the side with ILTV light.

Typically, the optical waveguide core is surrounded by cladding material several times the transverse dimension of the core. For successful side-writing not only must is the activating UV light be transmitted by the cladding, but it must also be absorbed sufficiently by the core to enable the light to photoinduce efficiently an index change thereTherefore, because the transverse dimensions of an optical waveguide are the order of only a few microns, as a primary requirement for high photosensitivity, the absorption due to the presence of the core clopant must be as large as possible. Flame brushing has been found to create these advantageous conditions for effective side-writing.

in optical waveguides photosensitized by our method we have written strong Bragg gratings 10 as shown in Fig. 5 in three-dimensional planar and optical fiber waveguldes, with KrF (249 nm) radiation incident on the samples through a zero-order-nulled photolithographic grating phase mask 12 as shown in Fig. 6 patterned with a pitch required for optical waveguide Bragg resonance at about 1540 nm.

Figure 4 illustrates the measured wavelength response of a 1 mm long Ge:5i02-on-si planar waveguide Bragg grating. The 81.0o- reflectivity corresponds to a core refractive indeX Modulation amplitude of S.9X10-4 for each of the two principal polarization states. To write the Bragg grating, the wavegulde was photosensitized by 10 minutes of flame brush processing prior to irradiation by a Irr excimer laser beam which was incident on the waveguide at 50 PRF for 15 minutes through the photolithographic grating phase mask.

The writing of Bragg gratings, is very useful for characterizing the photosensitive response of optical waveguides. Both the average change in index with exposure and the corresponding depth of modulation of the index can be monitored. The shift of the Bragg resonance wavelength as a function of photolithographic exposure dose to UV light provides a measure in real time of the average change in the refractive index caused by the exposure. The strength of the Bragg resonance yields the. depth of the photoinduced spatial modulation. With phase mask photolithography on fibar, the ratio of the modulation to the average index change that we attained consistently was about 0.4. At the high fluence per pulse levels needed to write the in core Bragg grating. we wrote simultaneously a high quality surface relief grating at the silicon-silica interface which we attributed to light-induced melting of the silicon. together with stress relaxation at the interface.

We carried out temperature stability measurements on the photoinduced Bragg grating whose response is shown in Figure 4. After the sample was held at 5000C for 17 hours, the refractive index modulation stabilized at 3.6x10-44, representing a decrease of 40% of its original value.

Photosansitized waveguide could-simplify single pulse writing of in-fiber Bragg gratings and yield useful sensor devices.

The present inVent!On Provides an effective method for photosensitizing Optical waveguides with high spatial selectively (onlY the selected portion of the waveguide need be photosensitized) and for fabricating efficient Bragg gratings in at least Ge.Si02-on-Si and Ge-doped core optical fiber waveguides.

Localized heating with a flame has been found to be a simple and effective method for augmenting substantially the photosensitivity of high silica optical waveguides to ultraviolet light. The method increases the photosensitivity of standard (Ge-doped core) telecommunications fiber by a factor greater than ten (photoinduced An > 10-3) and renders strongly photosensitive high quality Ge.Si02-on-SI, is Ge:Si02-on-Si02 and Ge:Si02-on-A1203 planar waveguides that were negligibly photosensitive prior to treatment.

Using waveguides photosensitized by the present invention strong Bragg gratings have been written in fiber and planar optical waveguide, with KrP (249 nm) radiation incident on the waveguides through a zero order-nulled phase mask. It is noteworthy that photosensitization by our method is achieved with a negligible increase in loss at the three principal optical communication windows.

While the above-described flame brushing method is described as preferably using a flarae fucled by a fuel such as hydrogen or propane, but to which a small amount of oxygen is sometimes added, it has been found that an improvement is achieved using a flare fueled by deuterium rather than with hydrogen. It is found that the resulting photosensitized optical wavegulde has lower losses than a hydrogen fueled flame brushed optical waveguide at the wavelength of about 1550 nm, and at other wavelengths of interest in optical communications and In sensing applications.

It has also been found that the method described in this specification will render a weakly photosensitive waveguide strongly photosensitive where the waveguide Is comprised of silica doped with phosphorous. Bragg gratings, for example, can be made with optical fibers having a phosphorous doped core, photosensitized using either flame brushing or hydrog4n loading and irradiated with actinic radiation of. for example, 193 run, which can be produced with an XCIMER laser. The cladding of the optical fiber or other wavegulde should be essentially transparent to the actinic radiation.

In accordance with another embodiment of the invention, instead of flame brushing the weakly is photosensitive optical waveguide, it should be placed in a plasma, wherein the plasma is generated In hydrogen or deuterium gas. The plasma maintains the waveguide at a lower temperature than the temperature experienced locally in a brushing flame, which advantageously reduces the likelihood of diffusion of dopant during the photosensitized process.

It should be noted that the invention is applicable to various optical waveguides, such as planar or channel waveguldes, and is not restricted to optical fiber waveguldes.

A person understanding this invention nay now conceive of alternative structures and embodiments or variations of the above. All of those which fall within the scope of the claims appended hereto are considered to be part of the present invention.

Claims

We Claim:

I. A method of fabricating a strongly photosensitive optical waveguide comprising locally heating a portion of a weakly photosensitive optical waveguide for a period of time sufficient to increase the concentration of defects associated with photosensitivity in the heated portion of said waveguide.

2. A method as defined in claim 1 in which the wavegulde is an optical fiber.

3. A method as defined in claim 2 in wnich said weakly photosensitive waveguide is comprised of one of Ge;S102 on a Si substrate, Ge:Si02 on a S'02 substrate, and Ge: SiO2 on a A1203 substratc.

4. A method as defined in claim z in which said weakly photosensitive waveguide is comprised of silica doped with one of germanium, cerium and europium.

5. A method as defined in claim 1 in which the waveguide is a planar waveguidle.

6. A method as defined in claim 5 in which said weakly photosensitive waveguida is comprised of one of germanium doped silica or a silicon, silica and sapphire substrate material.

7- A method as defined in claim 5 in which said weakly Photosensitive waveguide is comprised of silica doped with one of germanium. cerium and europium.

g- A method as defined in claim 1 in which said defects are oxygen deficiency defects.

g. A method as defined in claim 1 in which said waveguide is fabricated strongly photosensitive to wavelengths of approximately 248 rnn.

10. A method as defined in claim 1 in which the weakly photosensitive optical wavegulde local heating is conducted by anoving a local heating source along said waveguide to increase a size of a region containing said defects.

11. A method as defined in claim 1 in which the local heating source is a flame, used to brush the optical waveguide, the flame being fueled by a gas.

12. A method as- defined in claim 12. in which the temperature of the flame!a approximately 17000C.

13. A method as defined in claim 12 in which the gas is hydrogen.

14. A method as defined in claim 12 in which the flame brushing is continued for approximately 10-20 minutes.

15. A method as defined in claim 5, including the initial steps of fabricating the planar waveguide by flame- hydrolysis of Ge doped S'02 on a silica substrate to form a layer approximately 5 gm :5 thick.

16. A method aS defined in claim 1 in which said weakly photosensitive waveguide is comprised of silica doped with one of germanium, cerium and europium.

17 A nethod as def ined in claim 1 including the further stepa of creating at least one of a Bragg and surface relief grating comprising positioning a grating phase mask at the side of the strongly photosensitized portion of the waveguide with its plane parallel to the axis of the waveguide, and irradiating said strQngly photosensitized portion of the waveguide through the phase mask with inonochr62natic light at a wavelength at which said waveguide is strongly photosensitive.

is. A length of WeaklY photosensitive optical waveguide having a localized section which is significantly photosensitive.

19. A waveguide as defined in claim 18 in the form of an optical fiber20. A waveguide as defined in claim 12 in the form of a planar waveguide.

21. A waveguide, as defined in claira is comprised of one of Ge:SiO2 on a Si substrate, Ge:Si02 on a Si02 substrate, and Ce:S102 on a A1203 substrate.

22. A waveguide- as defined in claim 21.. in the form of a slab waveguide.

23. A waveguide as defined in claim 21. in the form of an optical fiber.

24. A waveguide as defined in claim 18 in which said localized section has significantly more oxygen deficiency defects than adjacent sections of tho waveguide.

25. A waveguide as defined in claim Is, ún which said localized section is strongly photosensitive to wavelengths of approximately 240 nm.

26. A waveguide as defined in claim is, in which said wayeguide is a slab wavegulde comprised of silica doped with one of germanium, cerium, erbium and europium.

27. A waveguide as defined in claim 18 comprised of at least one of a Bragg and a surface relief grating contained in said localized section.

28. A method as defined in claim 2, wherain the waveguide is codoped with aluxina.

29. A method as defined in claim 7, wherein the wavegulde is codoped with alumina.

30. A method as defined in claim 11 in which oxygen is added to the gas.

31. A method as defined in claim 16, wherein the waveguide is codoped with alumina.

32. A waveguide as defined in claim 21, in the form of a planar waveguide.

33. A wayegulde as defined in claim is, in which said wavegulde is a planar waveguide comprised of silica eloped with one of germanium, cerium, erbium, and europium.

34. A method as defined in claim 2e, wherein the waveguide is codoped with alumina.

35. A method as defined in claim 36, where-in the waveguide is codoped with alumina.

36. A method as described in claim 11 in which the heating step is comprised of placing the weakly photosensitive optical wavegulde in a flame fueled by hydrogen or deuterium.

37. A method of fabricating a strongly photosensitive optical waveguide comprising placing a weakly photosensitive optical waveguIde in a sufficiently high pressure plasma of hydrogen or deuterium gas for a period of time sufficient to increase the concentration of defects associated with photosensitivity in the heated portion of the waveguide.

38. A Method as defined in claim 1 in which said weakly photosensitive waveguide is comprised of silica doped with one of germanium, ceriuTa, europium and phosphorous.

39. A method as defined in claim 38 in which the waveguide is one of an optical fiber, a channel and at least part of a planar layer.

40. A method of photosensitization comprising locally heating at least a portion of a weakly sensitive silica optical waveguide doped with phosphorous for a period of time sufficient to increase the concentration of defects associated with photosensitivity in the heated portion of the wavegulde, and irradiating said heated portion with actinic radiation in order to cause a refractive index change in the waveguide.

41. A method as defined in claim 40 in which a waveguide core is covered by a cladding essentially transparent to active radiation, and passing said radiation through the cladding to the waveguide core.

42. A method as defined in claim 41 in which the heating step is comprised of retaining said weakly sensitive waveguide in a plasma fueled by hydrogen gr deuterium.

1 43. A Inethod as defined in Claim 40 in which the-waveguide core is codoped with a laser activ dopant such as erbi=.