GB2265635B - Cathodic sputtering device using a plasma produced by microwaves - Google Patents
Cathodic sputtering device using a plasma produced by microwavesInfo
- Publication number
- GB2265635B GB2265635B GB9306510A GB9306510A GB2265635B GB 2265635 B GB2265635 B GB 2265635B GB 9306510 A GB9306510 A GB 9306510A GB 9306510 A GB9306510 A GB 9306510A GB 2265635 B GB2265635 B GB 2265635B
- Authority
- GB
- United Kingdom
- Prior art keywords
- microwaves
- sputtering device
- plasma produced
- cathodic sputtering
- cathodic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004544 sputter deposition Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9203879A FR2689143B1 (en) | 1992-03-31 | 1992-03-31 | CATHODE SPRAYING DEVICE USING MICROWAVE GENERATED PLASMA. |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9306510D0 GB9306510D0 (en) | 1993-05-19 |
GB2265635A GB2265635A (en) | 1993-10-06 |
GB2265635B true GB2265635B (en) | 1995-06-28 |
Family
ID=9428281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9306510A Expired - Fee Related GB2265635B (en) | 1992-03-31 | 1993-03-29 | Cathodic sputtering device using a plasma produced by microwaves |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE4310241A1 (en) |
FR (1) | FR2689143B1 (en) |
GB (1) | GB2265635B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0691419A1 (en) * | 1994-07-05 | 1996-01-10 | General Electric Company | A process and apparatus for forming multi-layer optical films |
WO1999012184A2 (en) * | 1997-09-05 | 1999-03-11 | Alcad Pro, Inc. | Microwave power applicator for generating reactive chemical species from gaseous reagent species |
DE19925493C1 (en) | 1999-06-04 | 2001-01-18 | Fraunhofer Ges Forschung | Linearly extended arrangement for large-area microwave treatment and for large-area plasma generation |
DE102004039468B4 (en) * | 2004-08-14 | 2008-09-25 | R3T Gmbh Rapid Reactive Radicals Technology | Device for generating excited and / or ionized particles in a plasma |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1462241A (en) * | 1973-01-12 | 1977-01-19 | Coulter Information Systems | Thin film deposition apparatus using segmented target means |
EP0184812A2 (en) * | 1984-12-11 | 1986-06-18 | Hitachi, Ltd. | High frequency plasma generation apparatus |
US5006218A (en) * | 1989-07-20 | 1991-04-09 | Matsushita Electric Industrial Co., Ltd. | Sputtering apparatus |
GB2237031A (en) * | 1989-10-19 | 1991-04-24 | Atomic Energy Authority Uk | Titanium carbide/boride coated silicon carbide filaments for composites |
US5073245A (en) * | 1990-07-10 | 1991-12-17 | Hedgcoth Virgle L | Slotted cylindrical hollow cathode/magnetron sputtering device |
US5196105A (en) * | 1990-12-03 | 1993-03-23 | Leybold Aktiengesellschaft | System for coating substrates with magnetron cathodes |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2583250B1 (en) * | 1985-06-07 | 1989-06-30 | France Etat | METHOD AND DEVICE FOR EXCITTING A MICROWAVE PLASMA WITH ELECTRONIC CYCLOTRONIC RESONANCE |
JP2761893B2 (en) * | 1988-08-12 | 1998-06-04 | キヤノン株式会社 | Sputtering equipment |
JP2777657B2 (en) * | 1989-06-26 | 1998-07-23 | 日本電信電話株式会社 | Plasma deposition equipment |
-
1992
- 1992-03-31 FR FR9203879A patent/FR2689143B1/en not_active Expired - Fee Related
-
1993
- 1993-03-29 GB GB9306510A patent/GB2265635B/en not_active Expired - Fee Related
- 1993-03-30 DE DE19934310241 patent/DE4310241A1/en not_active Ceased
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1462241A (en) * | 1973-01-12 | 1977-01-19 | Coulter Information Systems | Thin film deposition apparatus using segmented target means |
EP0184812A2 (en) * | 1984-12-11 | 1986-06-18 | Hitachi, Ltd. | High frequency plasma generation apparatus |
US5006218A (en) * | 1989-07-20 | 1991-04-09 | Matsushita Electric Industrial Co., Ltd. | Sputtering apparatus |
GB2237031A (en) * | 1989-10-19 | 1991-04-24 | Atomic Energy Authority Uk | Titanium carbide/boride coated silicon carbide filaments for composites |
US5073245A (en) * | 1990-07-10 | 1991-12-17 | Hedgcoth Virgle L | Slotted cylindrical hollow cathode/magnetron sputtering device |
US5196105A (en) * | 1990-12-03 | 1993-03-23 | Leybold Aktiengesellschaft | System for coating substrates with magnetron cathodes |
Also Published As
Publication number | Publication date |
---|---|
FR2689143B1 (en) | 1994-05-13 |
GB9306510D0 (en) | 1993-05-19 |
DE4310241A1 (en) | 1993-10-07 |
FR2689143A1 (en) | 1993-10-01 |
GB2265635A (en) | 1993-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20010329 |