GB2265635B - Cathodic sputtering device using a plasma produced by microwaves - Google Patents

Cathodic sputtering device using a plasma produced by microwaves

Info

Publication number
GB2265635B
GB2265635B GB9306510A GB9306510A GB2265635B GB 2265635 B GB2265635 B GB 2265635B GB 9306510 A GB9306510 A GB 9306510A GB 9306510 A GB9306510 A GB 9306510A GB 2265635 B GB2265635 B GB 2265635B
Authority
GB
United Kingdom
Prior art keywords
microwaves
sputtering device
plasma produced
cathodic sputtering
cathodic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9306510A
Other versions
GB9306510D0 (en
GB2265635A (en
Inventor
Aime Perrin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Direction General pour lArmement DGA
Etat Francais
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Direction General pour lArmement DGA
Commissariat a lEnergie Atomique CEA
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Direction General pour lArmement DGA, Commissariat a lEnergie Atomique CEA, Etat Francais filed Critical Direction General pour lArmement DGA
Publication of GB9306510D0 publication Critical patent/GB9306510D0/en
Publication of GB2265635A publication Critical patent/GB2265635A/en
Application granted granted Critical
Publication of GB2265635B publication Critical patent/GB2265635B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
GB9306510A 1992-03-31 1993-03-29 Cathodic sputtering device using a plasma produced by microwaves Expired - Fee Related GB2265635B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9203879A FR2689143B1 (en) 1992-03-31 1992-03-31 CATHODE SPRAYING DEVICE USING MICROWAVE GENERATED PLASMA.

Publications (3)

Publication Number Publication Date
GB9306510D0 GB9306510D0 (en) 1993-05-19
GB2265635A GB2265635A (en) 1993-10-06
GB2265635B true GB2265635B (en) 1995-06-28

Family

ID=9428281

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9306510A Expired - Fee Related GB2265635B (en) 1992-03-31 1993-03-29 Cathodic sputtering device using a plasma produced by microwaves

Country Status (3)

Country Link
DE (1) DE4310241A1 (en)
FR (1) FR2689143B1 (en)
GB (1) GB2265635B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0691419A1 (en) * 1994-07-05 1996-01-10 General Electric Company A process and apparatus for forming multi-layer optical films
WO1999012184A2 (en) * 1997-09-05 1999-03-11 Alcad Pro, Inc. Microwave power applicator for generating reactive chemical species from gaseous reagent species
DE19925493C1 (en) 1999-06-04 2001-01-18 Fraunhofer Ges Forschung Linearly extended arrangement for large-area microwave treatment and for large-area plasma generation
DE102004039468B4 (en) * 2004-08-14 2008-09-25 R3T Gmbh Rapid Reactive Radicals Technology Device for generating excited and / or ionized particles in a plasma

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1462241A (en) * 1973-01-12 1977-01-19 Coulter Information Systems Thin film deposition apparatus using segmented target means
EP0184812A2 (en) * 1984-12-11 1986-06-18 Hitachi, Ltd. High frequency plasma generation apparatus
US5006218A (en) * 1989-07-20 1991-04-09 Matsushita Electric Industrial Co., Ltd. Sputtering apparatus
GB2237031A (en) * 1989-10-19 1991-04-24 Atomic Energy Authority Uk Titanium carbide/boride coated silicon carbide filaments for composites
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5196105A (en) * 1990-12-03 1993-03-23 Leybold Aktiengesellschaft System for coating substrates with magnetron cathodes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2583250B1 (en) * 1985-06-07 1989-06-30 France Etat METHOD AND DEVICE FOR EXCITTING A MICROWAVE PLASMA WITH ELECTRONIC CYCLOTRONIC RESONANCE
JP2761893B2 (en) * 1988-08-12 1998-06-04 キヤノン株式会社 Sputtering equipment
JP2777657B2 (en) * 1989-06-26 1998-07-23 日本電信電話株式会社 Plasma deposition equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1462241A (en) * 1973-01-12 1977-01-19 Coulter Information Systems Thin film deposition apparatus using segmented target means
EP0184812A2 (en) * 1984-12-11 1986-06-18 Hitachi, Ltd. High frequency plasma generation apparatus
US5006218A (en) * 1989-07-20 1991-04-09 Matsushita Electric Industrial Co., Ltd. Sputtering apparatus
GB2237031A (en) * 1989-10-19 1991-04-24 Atomic Energy Authority Uk Titanium carbide/boride coated silicon carbide filaments for composites
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5196105A (en) * 1990-12-03 1993-03-23 Leybold Aktiengesellschaft System for coating substrates with magnetron cathodes

Also Published As

Publication number Publication date
FR2689143B1 (en) 1994-05-13
GB9306510D0 (en) 1993-05-19
DE4310241A1 (en) 1993-10-07
FR2689143A1 (en) 1993-10-01
GB2265635A (en) 1993-10-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20010329