FR2689143B1 - CATHODE SPRAYING DEVICE USING MICROWAVE GENERATED PLASMA. - Google Patents

CATHODE SPRAYING DEVICE USING MICROWAVE GENERATED PLASMA.

Info

Publication number
FR2689143B1
FR2689143B1 FR9203879A FR9203879A FR2689143B1 FR 2689143 B1 FR2689143 B1 FR 2689143B1 FR 9203879 A FR9203879 A FR 9203879A FR 9203879 A FR9203879 A FR 9203879A FR 2689143 B1 FR2689143 B1 FR 2689143B1
Authority
FR
France
Prior art keywords
spraying device
generated plasma
microwave generated
cathode spraying
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9203879A
Other languages
French (fr)
Other versions
FR2689143A1 (en
Inventor
Aime Perrin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9203879A priority Critical patent/FR2689143B1/en
Priority to GB9306510A priority patent/GB2265635B/en
Priority to DE19934310241 priority patent/DE4310241A1/en
Publication of FR2689143A1 publication Critical patent/FR2689143A1/en
Application granted granted Critical
Publication of FR2689143B1 publication Critical patent/FR2689143B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
FR9203879A 1992-03-31 1992-03-31 CATHODE SPRAYING DEVICE USING MICROWAVE GENERATED PLASMA. Expired - Fee Related FR2689143B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9203879A FR2689143B1 (en) 1992-03-31 1992-03-31 CATHODE SPRAYING DEVICE USING MICROWAVE GENERATED PLASMA.
GB9306510A GB2265635B (en) 1992-03-31 1993-03-29 Cathodic sputtering device using a plasma produced by microwaves
DE19934310241 DE4310241A1 (en) 1992-03-31 1993-03-30 Cathode ray sputtering apparatus using a microwave generated plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9203879A FR2689143B1 (en) 1992-03-31 1992-03-31 CATHODE SPRAYING DEVICE USING MICROWAVE GENERATED PLASMA.

Publications (2)

Publication Number Publication Date
FR2689143A1 FR2689143A1 (en) 1993-10-01
FR2689143B1 true FR2689143B1 (en) 1994-05-13

Family

ID=9428281

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9203879A Expired - Fee Related FR2689143B1 (en) 1992-03-31 1992-03-31 CATHODE SPRAYING DEVICE USING MICROWAVE GENERATED PLASMA.

Country Status (3)

Country Link
DE (1) DE4310241A1 (en)
FR (1) FR2689143B1 (en)
GB (1) GB2265635B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0691419A1 (en) * 1994-07-05 1996-01-10 General Electric Company A process and apparatus for forming multi-layer optical films
WO1999012184A2 (en) * 1997-09-05 1999-03-11 Alcad Pro, Inc. Microwave power applicator for generating reactive chemical species from gaseous reagent species
DE19925493C1 (en) * 1999-06-04 2001-01-18 Fraunhofer Ges Forschung Linearly extended arrangement for large-area microwave treatment and for large-area plasma generation
DE102004039468B4 (en) * 2004-08-14 2008-09-25 R3T Gmbh Rapid Reactive Radicals Technology Device for generating excited and / or ionized particles in a plasma

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829373A (en) * 1973-01-12 1974-08-13 Coulter Information Systems Thin film deposition apparatus using segmented target means
JPH0740468B2 (en) * 1984-12-11 1995-05-01 株式会社日立製作所 High frequency plasma generator
FR2583250B1 (en) * 1985-06-07 1989-06-30 France Etat METHOD AND DEVICE FOR EXCITTING A MICROWAVE PLASMA WITH ELECTRONIC CYCLOTRONIC RESONANCE
JP2761893B2 (en) * 1988-08-12 1998-06-04 キヤノン株式会社 Sputtering equipment
JP2777657B2 (en) * 1989-06-26 1998-07-23 日本電信電話株式会社 Plasma deposition equipment
JPH0814021B2 (en) * 1989-07-20 1996-02-14 松下電器産業株式会社 Sputtering device
GB8923588D0 (en) * 1989-10-19 1989-12-06 Atomic Energy Authority Uk Coated filaments for composites
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
DE4038497C1 (en) * 1990-12-03 1992-02-20 Leybold Ag, 6450 Hanau, De

Also Published As

Publication number Publication date
GB2265635B (en) 1995-06-28
FR2689143A1 (en) 1993-10-01
GB2265635A (en) 1993-10-06
GB9306510D0 (en) 1993-05-19
DE4310241A1 (en) 1993-10-07

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Legal Events

Date Code Title Description
AU Other act affecting the ownership or exploitation of an industrial property right
ST Notification of lapse