GB2262187A - Semiconductor resistors - Google Patents

Semiconductor resistors Download PDF

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Publication number
GB2262187A
GB2262187A GB9301741A GB9301741A GB2262187A GB 2262187 A GB2262187 A GB 2262187A GB 9301741 A GB9301741 A GB 9301741A GB 9301741 A GB9301741 A GB 9301741A GB 2262187 A GB2262187 A GB 2262187A
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United Kingdom
Prior art keywords
resistance element
resistance
conductor
polycrystalline silicon
resistor
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Application number
GB9301741A
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GB9301741D0 (en
Inventor
Yasunari Furuya
Kazuko Moriya
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Seiko Epson Corp
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Seiko Epson Corp
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Publication date
Priority claimed from JP1290499A external-priority patent/JP2864576B2/en
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of GB9301741D0 publication Critical patent/GB9301741D0/en
Publication of GB2262187A publication Critical patent/GB2262187A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/19041—Component type being a capacitor
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    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
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    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

1 - -,' 1 --- ' j I-- A HIGH PRECISION SEMICONDUCTOR RESISTOR DEVICE The
present invention relates to a high precision resistance element structure used for a semiconductor device.
Fig. 1 is a structural diagram showing a conventional polycrystalline silicon resistance element, and in particular a high resistance element which is formed on a semiconductor substrate. Polvcrystalline silicon -1 is formed on tile semiconductor substrate 3 through the insuiating (or oxide) film 9, and is connected to aluminium electrodes 4 and 6 through the contacts 5 and 7. An I insulating film 10 is formed on the top surface of the polycrystalline silicon 2 which overlay only the aluminium signal lines or an oxide protective film.
Furthermore, Fig. 2 is a structural diaoram showing a conventional resistance element which is formed on a semiconductor substrate using a low concentration diffused region or an ion implanted diffused region. A diffused resistor 12 which is formed on a surface of the semiconductor substrate 13 is connected to the aluminium lines 14 and 16 throuall the contacts 15 and 17. An insulating film (or an oxide film) is formed over the diffused resistor. The insulating film overlays only either the signal lines of polycrystalline silicon or aluminium, or an oxide protective film.
However, in the conventional structure shown in Fig. 2, a depletion layer occurs on the surface of the resistance element due to the electrical field from the signal lines passing through the resistance element, and causes an increase in the resistance value of it. When the depth of the depletion layer reaches a degree that is not able to be ignored with respect to the diffusion depth of the resistance element, it varies largely the resistance value. An ion implanted resistance element with a depth of less I Lnl and a sheet resistance of 6 to 9 Kfl/m2 suffers from phenomenon remarkably, and may vary its resistance value over several to several ten %.
Similarly, when a high value resistance polycrystalline silicon is appried to the structure shown in Fig. I which is protected only by an oxide film, its resistance value is often varied due to impurity ions invaded onto the polycrystalline silicon.
A semiconductor element varies naturally in its energy level in response to incident light. Therefore, there has been a disadvantage that the resistance value is varied in response to light such as visible rays, infrared rays, or ultraviolet ravs bein- irradiated onto a semiconductor device.
A semiconductor device stnucture according to the present invention is characterised in that a low resistance conductor is formed at least over a diffused resistor or a polycrystalline silicon resistance element formed using low concentration diffusion or ion implantation, the conductor being lower than that of the resistance element. and the low resistance conductor is kept at a fixed potential with respect to a power source. Thus a conductor connected to a fixed potential is formed at least over a low concentration diffused resistor or an ion implanted resistor, or a high resistance value polycrystalline silicon.
According to the present invention, there is provided a semiconductor device comprising:
a semiconductor substrate; a resistance element formed of polycrystalline silicon either disposed over said substrate or diffused therein; a conductor which is disposed over said resistance element and to which a fixed potential is applied, wherein the improvement lies in a lower conductor arranged to underly said resistance element and to which said fixed potential is applied.
This structure can stop impurity ions or an electromagnetic field from close si-nal lines causin- a variation in resistance value. Hence, this structure
11 3 can maintain a low concentration diffused resistor and a polyerystalline silicon resistor to a stable resistance value, and can prevent the resistance value varying due to irradiated light.
The present invention will now be described with reference to the accompanying drawings, of which:
Fig. 1 is a structural diagram showing a conventional polyerystalline silicon resistance element; Fig. 2 is a structural diagram showing a conventional diffused resistance element; element; Fig. 3 is a structural diagram showin a polycrystalline silicon resistance t5 9 Fig. 4 is, structural diagram showing a diffused resistance element; Fig. 5 is a structural diagram showing a polycrystalline silicon resistor element over which a pair of conductors cover the top dnd unoe r surfaces thereof, according to the present invention; Fig. 6(a) is a structural diagram showing a polyerystalline silicon resistor element covered with a conductor connected to a potential Vdd, and Fig. 6(b) is a circuit diagram where the conductor potential is an output of a transistor; _Fig. 7 is an equivalent circuit diagram showing a high frequency delay line circuit using a shielding conductor covered resistance element according to the present invention.
Fig. 3 is a structural diagram showing a fundamental structure and a polycrystalline silicon resistance element. A polycrystalline silicon resistance element 2 has two ends, one being derived from the contact 5 and the other being derived from the contact 7. The electrodes 4 and 6 are made of aluminium material. A low resistance conductor 1 is formed over the polycrystalline silicon 2 by way of an oxide film so as to cover at least half the plane area of the polycrystalline silicon 2, and is supplied with a fixed potential (for example, a low power source potential Vss 8, a high power source potential 4 Vdd, or an intermediate potential). The oxide film 9 provides an insulating film.
Such a resistance element structure has advantages as follows: Firsr-ft can prevent noise entering from the signal line arranged over the low resistance conductor 1 and the external field, into the resistance element. That means that any electrical and magnetic noise transferred from stray capacitance and stray inductance around the resistance element is removed by the electrostatic shielding effect of the low resistance conductor. Hence. the resistance element does not vary its current vs voltage characteristics (that is. resistance value) during operation of a semiconductor device. and maintains a stable and high precision resistance value.
Next, external positive ions or negative ions can be blocked from invading a resistance element after completion of the manufacturing process. In other words, the ions which are positively charged more than the potential of the low resisdince conductor are repelled away from the resistance element, while the negatively charged ions are attracted toward the low resistance conductor. While a semiconductor is energised, the ion distribution is uniform around the low resistance element, and the influence of an electric field due to the external ions can be prevented.
Hence, the resistance value variations over aging can be prevented. Also, the low resistance conductor can shield the resistance element from being illuminated by externally irradiated light. Since the high resistance value polycrystalline silicon resistor is made of a semiconductor, light energy of visible rays, infrared rays, or ultraviolet rays transits the electron energy, thus changing the characteristics thereof. The above mentioned problems can be solved by covering with a low resistance conductor acting as a physical protective material to obtain a stable resistance element.
As described above, the characteristic variations of the resistance element under influence from an external field can be prevented advantageously.
Similarly, this countermeasure additionally enables noise, electric field, and magnetic field generated from the resistance element itself to be prevented from affecting the circumference. In particular, in a high speed circuit, the resistance element through which electric charges change abruptly, generates a large thermal noise and unnecessary radiation. The present invention is effective for such a device. In addition to P type polycrystalline silicon and N type polycrystalline silicon used as low resistance materials, the present invention is similarly effective in the case of high resistance non-ion implanted or slightly ion implanted polvcrystalline silicon (called "Hiúh Resistance") or other semiconductors which are not restricted to silicon and is even effective in the case of semiconductors made of metal compounds.
A metal such as aluminium, tungsten, molybdenum may be generally used as a low resistance material. In addition. a polycrystalline silicon, a C7 galliurn and arsenic series compound and a superconductivity material may be used effectively.
The present invention has a wide variety of applications because of the simplified structure. Let us focus on application examples of the resistance element structure.
Fig. 5 is a structural diagram showing a shielding layer formed on a lower portion of the resistance element. A lower conductor 82 is formed over the semiconductor substrate 83 throu-h the oxide film 86, and is connected to a potential Vss 85. The polycrystalline silicon resistance element 80 is formed throu-h an oxide film, and is covered with an aluminium conductor 81 through the oxide film, the aluminium conductor being connected to a potential Vss 84. The structure provides effectively a stable resistance element because of the vertically shielded resistance element 80. The above effect is improved more by takincy many contacts between the lower polverystalline silicon and the power source Vss because the lower polycrystalline silicon has a higher resistance than aluminium. In particular. when polycrystalline silicon conductors are used, by 6 arranging power source contacts at at least two places at each end of the polycrystalline silicon which is between and facing the resistance element, if you ensure that the potential at all parts of polycrystalline silicon conductor is the same as far as possible, there is a substantial improvement in relation to the resistance element.
Fig. 6 (a) is a structural diagram showing a resistance element. wherein a potential Vdd 90 is supplied to the low resistance conductor shown in Fig. 1. The potential Vdd 90 may be replaced for the potential Vss in light of the shielding effect.
a FiW 6 (b) is an example showing a transistor producing an intermediate potential between the potentials Vdd and Vss to the low resistance conductor. It is assumed that the driving-capabilities'off the MOS transistors 91, '92, 95, and 94 are Pp,, Pp, PNI, and PN2, respectively and the potential Oif the signal 96 is expressed as follows:
V2 = Vdd - ON2 pp, X (VTpul -VTP1) where Pp,, == Pp, PN19 -- PN29 VTNI = VTN2l pp, - ON1 Vdd - V, = VTp,, - VTpi. Hence, the output voltage is expressed below by taking Vdd as a reference voltage:
Vout = V,.
t 7 In order to improve the shielding effect, it is necessary to lower the output impedance for the intermediate potential. In Fig. 6(b), the output 97 is obtained by using a differential pair circuit as a V2 voltage follower.
The depletion effect which is one cause in variations to the shielded resistance element can be compensated by varying the potential of the shield in cooperation with the temperature characteristics of the shielded resistance element.
In order to design a layout of a semiconductor integrated device using a standard cell process, an automatic arranging and wiring process can be performed by registering predetermingly the resistors and aluminium conductors Z-P covering them as one cell.
According to the present invention, a polycrystalline silicon resistor structure with a one layered aluminium wiring has been explained above as an embo.diment. The present invention can. be applied to a two or three layered wiring structure in semiconductor device.
In the above mentioned embodiments, polycrystalline silicon has been used as a silicon material. However, a diffused resistor buried in a semiconductor substrate may be applied to form a stable resistor using the shielding effect.
Fig. 4 is a fundamental structural diagram showing a diffused resistor. Contacts 15 and 17 are formed at both the ends of a diffused resistor 12, and aluminium lines 14 and 16 are used as electrodes. The aluminium conductor 11 covers at least a half of the area of the diffused resistor through an oxide, and is supplied with a potential Vss 18. In this structure the aluminium conductor 11 works as a shielding material, and realises effectively a stable and high precision C5 diffused resistor because it can shield electrically external electromagnetic noises, light, and ions, and blocks physically contamination.
As a material applied to a diffused resistor according to the present C_ invention, the following may be used, a low concentration diffused resistor including a P- well resistor formed into an N- substrate, and Nwell resistor 8 formed into a P- substrate, and a high concentration diffused resistor including ion implanted P+ and N+ resistors.
For a low resistance conductor material, a metal -semiconductor corrWound and superconductive material may be used, in addition to aluminiurn and polycrystalline silicon.
A variety of combinations of the diffused resistor and the shield material can be performed. Let us now focus on embodiments of resistor structure.
Fig. 7 is an equivalent circuit diagram showing a high frequency delay line using a shielded resistor according to the present invention. A conductor which is connected to a fixed potential surrounds the resistors 160 to 163, and the capacitors 164 to 167 have a stable capacitance value. The shielded resistors provide good resistance value stability. A signal is input from the resistance terminal at the side VI. and issued from the resistance terminal at the side Vout.
As described above. the present invention has a wide range of applications. A resistance element is one of most fundamental passive elements for circuit technologies. and various circuits requires high precision resistors. Particularly, the present invention can be widely applied in the following semiconductor intearated electronic devices: oscillation circuits, A/D converters, and sensor circuits which require resistors with absolute resistance value; D/A converters, voltage sensing circuits. and oscillation halt detecting circuits which require a ZD t mutual resistance precision between a plurality of resistors; static RAMs, EPROMs, and E2PROMs which require high value resistors with suppressed leak- current.
Furthermore, the art according to the present invention in which a resistance element is shielded with a conductor can be applied to capacitors, transistors, or other related devices to improve the stabilities of them.
The present invention has an extremely wide range of applications because the stable and high precision resistance element can be formed by using existing manufacturing processes and requiring little peripheral structural patterns.
p v 9 An improved resistance stability and precision means that an absolute resistance value of a resistor and a mutual resistance ratio between a plurality of resistance elements are less likely to be effected by ambient electromagneticnoise. The structure according to the present invention also is unlikely to be affected by ions and prevents resistance value variations over aging, because the surface potential (generally of an oxide) of a resistance element is not floated c electrically. Also, the structure can prevent variations in resistance element characteristics due to light, and can suppress electromagnetic noises generated from the resistance element itself. Furthermore. a lightly diffused high t> resistance element with high precision occupies a small area which ultimately leads to a highly integrated semiconductor device.
c

Claims (4)

  1. A semiconductor device comprising: a semiconductor substrate; a resistance element formed of polycrystalline silicon either disposed over said substrate or diffused therein; a conductor which is disposed over said resistance element and to which a fixed potential is applied, wherein the improvement lies in a lower conductor arranged to underly said -resistance element and to which said fixed potential is applied.
  2. 2. '. A semiconductor as claimed in claim 1, in which said conductor disposed over said resistance element covers the top surface thereof.
  3. 3. A semiconductor device as claimed in claim 1 or 2, further comprising an insulating film disposed between said resistance element and said conductor.
  4. 4. A semiconductor device as claimed in claim 1, 2 or 3, further comprising a second insulating film disposed between said substrate and said resistance element.
    1
GB9301741A 1988-11-22 1989-11-21 Semiconductor resistors Withdrawn GB2262187A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP29508388 1988-11-22
JP8109489 1989-03-31
JP1290499A JP2864576B2 (en) 1988-11-22 1989-11-08 Semiconductor device

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Publication Number Publication Date
GB9301741D0 GB9301741D0 (en) 1993-03-17
GB2262187A true GB2262187A (en) 1993-06-09

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GB9015141A Expired - Fee Related GB2232530B (en) 1988-11-22 1989-11-21 A high precision semiconductor resistor device
GB9301741A Withdrawn GB2262187A (en) 1988-11-22 1989-11-21 Semiconductor resistors
GB9301742A Expired - Fee Related GB2262188B (en) 1988-11-22 1993-01-29 A high precision semiconductor resistor device

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GB9015141A Expired - Fee Related GB2232530B (en) 1988-11-22 1989-11-21 A high precision semiconductor resistor device

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Application Number Title Priority Date Filing Date
GB9301742A Expired - Fee Related GB2262188B (en) 1988-11-22 1993-01-29 A high precision semiconductor resistor device

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GB (3) GB2232530B (en)
HK (2) HK120897A (en)
WO (1) WO1990005995A1 (en)

Cited By (1)

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DE4426121B4 (en) * 1993-07-23 2005-11-03 Hyundai Electronics Industries Co., Ltd., Ichon Method for producing a semiconductor memory device

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GB2262188B (en) 1993-09-15
GB9301741D0 (en) 1993-03-17
GB2232530B (en) 1993-09-22
WO1990005995A1 (en) 1990-05-31
HK105997A (en) 1997-08-22
GB9301742D0 (en) 1993-03-17
GB2232530A (en) 1990-12-12
GB2262188A (en) 1993-06-09
GB9015141D0 (en) 1990-09-05
HK120897A (en) 1997-09-12

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